Abstract: Stable contact hole forming is attained even when an aluminum oxide film is present between layers provided with contact holes. The process comprises the steps of forming a first element layer on a semiconductor substrate; forming a first interlayer insulating film on the first element layer; forming a second element layer on the first interlayer insulating film; forming a second interlayer insulating film on the second element layer; forming a hole resist pattern on the second interlayer insulating film; conducting a first etching for forming of holes by etching the second interlayer insulating film; and conducting a second etching for extending of holes to the first element layer by etching the first interlayer insulating film.

Abstract: A semiconductor device that includes a metal wiring formed on the insulating film and having a main wiring portion laminated with a plurality of metal films and a metal protection film formed at least on the upper surfaces of the main wiring portion and made of a precious metal material.

Abstract: A ferroelectric capacitor provided with a ferroelectric film (10a) is formed above a semiconductor substrate, and thereafter a wiring (17) directly connected to electrodes (9a, 11a) of a ferroelectric capacitor is formed. Then, a silicon oxide film (18) covering the wiring (17) is formed. As the silicon oxide film (18), a film which has processability higher than that of an aluminum oxide film is formed. Besides, a degree of damage that occurs in the ferroelectric capacitor when the insulating film is formed is equal to or less than that when an aluminum oxide film is formed.

Abstract: A fuel gas flow field is formed on a surface of a rectangular first metal separator. The fuel gas flow field includes flow grooves extending in the direction of gravity. An outlet buffer is provided at a lower end of the fuel gas flow field. The outlet buffer includes an inclined surface inclined toward a fuel gas discharge passage. The fuel gas discharge passage is positioned below the outlet buffer. Outlet channel grooves are formed by ridges provided between the fuel gas discharge passage and the outlet buffer. Lower ends of the ridges are arranged in a zigzag pattern.

Abstract: A fuel cell system includes a fuel cell stack, a gas liquid separator, a first drain channel, and a second drain channel. The gas liquid separator is connected to a fuel gas discharge passage of the fuel cell stack through a fuel gas discharge channel. The first drain channel is connected to the fuel gas discharge passage separately from the fuel gas discharge channel, and connected to the gas liquid separator through a valve unit. The second drain channel chiefly discharges liquid droplets from the gas liquid separator.

Abstract: There is provided a coolant manifold that is installed to a fuel cell stack so as to distribute coolant through the fuel cell stack, which is constituted by stacking a plurality of unit cells and has more than one communication holes for coolant supply and at least one communication hole for coolant discharge, in which the coolant flows in an order from the communication holes for coolant supply through a plurality of the unit cells to the communication hole for coolant discharge. The coolant manifold includes a manifold body having a manifold chamber that extends along an alignment direction of the communication holes for coolant supply, and an external communication part having an external communication hole for communicating the manifold chamber with external. A center axis of the external communication hole is placed unparallel and non-vertical relative to a center axis of each communication hole for coolant supply.

Abstract: A semiconductor device that includes a metal wiring formed on the insulating film and having a main wiring portion laminated with a plurality of metal films and a metal protection film formed at least on the upper surfaces of the main wiring portion and made of a precious metal material.

Abstract: A semiconductor device that includes a metal wiring formed on the insulating film and having a main wiring portion laminated with a plurality of metal films and a metal protection film formed at least on the upper surfaces of the main wiring portion and made of a precious metal material.

Abstract: A fuel cell stack having stacked unit fuel cells, each having a pair of separators between which a membrane electrode assembly is provided, which includes an anode and a cathode. Each separator has protruding lines arranged vertically in a zigzag manner, which protrude in a direction going away from the membrane electrode assembly. A space between the anode and the protruding lines of the separator facing the anode is used as a fuel gas passage. A space between the cathode and the protruding lines of the separator facing the cathode is used as an oxidant gas passage. At least part of the separators are each arranged in close contact with another separator so that a coolant passage through which a coolant flows horizontally is formed between both separators. A lower area of the coolant passage has a larger flow resistance than that of an upper area thereof.

Abstract: A method for manufacturing a semiconductor device including, forming a first insulating film above a silicon substrate, forming an impurity layer in the first insulating film by ion-implanting impurities into a predetermined depth of the first insulating film, and modifying the impurity layer to a barrier insulating film by annealing the first insulating film after the impurity layer is formed, is provided.

Abstract: A ferroelectric capacitor provided with a ferroelectric film (10a) is formed above a semiconductor substrate, and thereafter a wiring (17) directly connected to electrodes (9a, 11a) of a ferroelectric capacitor is formed. Then, a silicon oxide film (18) covering the wiring (17) is formed. As the silicon oxide film (18), a film which has processability higher than that of an aluminum oxide film is formed. Besides, a degree of damage that occurs in the ferroelectric capacitor when the insulating film is formed is equal to or less than that when an aluminum oxide film is formed.

Abstract: A semiconductor device including a semiconductor device, an integrated circuit chip, a sealing resin encapsulating the integrated circuit chip and an insulating waterproof film covering at least a portion of a surface of said sealing resin and preventing penetration of moisture into the sealing resin.

Abstract: A silicide film is formed between a ferroelectric capacitor structure, which is formed by sandwiching a ferroelectric film between a lower electrode and an upper electrode, and a conductive plug (the conductive material constituting the plug is tungsten (W) for example). Here, an example is shown in which a base film of the conductive plug is the silicide film.

Abstract: In a semiconductor device manufacturing method having the etching step of an electrode material film constituting a capacitor using ferroelectric substance or high- dielectric substance, etching of a conductive film that acts as an electrode of the capacitor formed over a semiconductor substrate is carried out in an atmosphere containing bromine, and a heating temperature of the semiconductor substrate is set in a range of 300° C. to 600° C., otherwise etching of at least the conductive film is carried out in an atmosphere to which only hydrogen bromide and oxygen are supplied from an outside.

Abstract: A fuel cell includes a plurality of fuel cell units, each fuel cell unit including an electrode assembly formed by disposing electrodes on both sides of an electrolyte, a pair of separators that sandwich the electrode assembly, and gas sealing members that are disposed at an outer peripheral portion of the electrode assembly, and that seal respective reaction gas flow passages that are formed between each separator and the electrode assembly. In one of the separators of each of the fuel cell units, a through path is formed that penetrates the separator in the thickness direction thereof, and the through path formed in one of the separators, of one of the fuel cell units and the through path formed in one of the separators of adjacent one of the fuel cell units are offset with each other as viewed in the thickness direction of the separators.

Abstract: The present invention relates to a solvent composition for removing radioactive substance, characterized by comprising at least one selected from hydrofluorocarbon, hydrofluoroether, and perfluoroketone as a medium for transporting the radioactive substance, and a method for removing a radioactive substance characterized by using the solvent composition for removing.

Abstract: A side plate of a casing includes bracket members and a surface member. Each of the bracket members includes three second coupling portions and a plate-shaped attachment portion provided integrally with the second coupling portions. A coupling pin is inserted into the second coupling portions. The surface member is joined to the plate-shaped attachment portion. The bracket member includes a step fitted to an end of the surface member. The plate-shaped attachment portion and the surface member are jointed at a spot welding section including spots in a zigzag pattern.

Abstract: A fuel cell stack includes a stack body formed by stacking a plurality of power generation units. A first end power generation unit and first dummy units are provided near an end plate where reactant gas pipes for the stack body are provided. A second end power generation unit and second dummy units are provided near an end plate of the stack body on the opposite side. The number of first dummy units is larger than the number of second dummy units.

Abstract: A fuel cell system includes a fuel cell stack formed by stacking a plurality of power generation cells, and an ejector for supplying a fuel gas to the fuel cell stack. A flow rectifier for rectifying the flow of the fuel gas is provided at a portion of an insulating plate of the fuel cell stack connecting the ejector and the fuel gas supply passage. The flow rectifier includes an opening having a laterally elongated shape in correspondence with the bottom of the fuel gas supply passage having a laterally elongated shape, and a plurality of holes provided above the opening.

Abstract: Stable contact hole forming is attained even when an aluminum oxide film is present between layers provided with contact holes. The process comprises the steps of forming a first element layer on a semiconductor substrate; forming a first interlayer insulating film on the first element layer; forming a second element layer on the first interlayer insulating film; forming a second interlayer insulating film on the second element layer; forming a hole resist pattern on the second interlayer insulating film; conducting a first etching for forming of holes by etching the second interlayer insulating film; and conducting a second etching for extending of holes to the first element layer by etching the first interlayer insulating film.