Abstract: A fuel cell stack includes side plates of a casing. Flanges are provided on the side plates on the short sides for coupling the side plates on the short sides to the other side plates on the long sides. In each of the side plates, the center O of the coupling pin is offset from the neutral surface NS of the side plate in a direction away from a stack body by the distance “h”.

Abstract: A fuel cell includes a plurality of fuel cell units. Each fuel cell unit includes an electrode assembly having electrodes and an electrolyte, a pair of separators, and gas sealing members. At least two of the fuel cell units include at least two electrode assemblies and at least three separators. In each of the separators, reaction gas communication ports are provided. In one of the separators of one of the stacked fuel cell units that is located at the end in a direction of stacking, through paths are formed. In one of the separators of one of the stacked fuel cell units that is located at the other end in the direction of stacking, reaction gas communication paths are formed. Both the through paths and the reaction gas communication paths are formed in all separators that are located between two fuel cell units that are located at the ends.

Abstract: A lower electrode film, a ferroelectric film, and an upper electrode film are formed on an insulation film covering a transistor formed on a semiconductor substrate. Furthermore, a Pt film is formed as a cap layer on the upper electrode film. Then, a hard mask (a TiN film and an SiO2 film) of a predetermined pattern is formed on the Pt film, and the Pt film and the upper electrode film are etched. Then, an insulating protective film is formed on an entire surface, and a side surface of the upper electrode film is covered with the insulating protective film. Next, the ferroelectric film and the lower electrode film are etched, thus forming a ferroelectric capacitor.

Abstract: The semiconductor device comprises a first insulation film 26 formed over a semiconductor substrate 10, first conductor plug 32 buried in a first contact hole 28a formed down to a source/drain diffused layer 22, a capacitor 44 formed over the first insulation film 26, a first hydrogen diffusion preventing film 48 formed over the first insulation film 26, covering the capacitor 44, a second insulation film 50 formed over the first hydrogen diffusion preventing film and having the surface planarized, a second hydrogen diffusion preventing film 52 formed over the first hydrogen diffusion preventing film 26 and having the surface planarized, a second hydrogen diffusion preventing film 52 formed over the second insulation film 50, second conductor plug 62 buried in a second contact hole 56 formed down to the lower electrode 38 or the upper electrode 42 of the capacitor 44, a third conductor plug 62 buried in a third contact hole 58 formed down to the first conductor plug 32, and an interconnection 64 connected to

Abstract: This fuel cell stack includes: a coolant-supplying penetration hole and a coolant-discharging penetration hole each communicating with a coolant passage and each penetrates unit fuel cells in a stacking direction. A coolant-supplying penetration hole and a coolant-discharging penetration hole are arranged in a horizontal direction opposing with each other so as to sandwich a power generating region. The fuel cell stack further includes: an air draining penetration hole communicating with the coolant passage and arranged such that at least one part thereof is located at a higher position than an uppermost position of the coolant passage, and penetrates the unit fuel cells in the stacking direction; and a coolant draining penetration hole communicating with the coolant passage and arranged such that at least one part thereof is located at a lower position than a lowermost position of the coolant passage, and penetrates the unit fuel cells in the stacking direction.

Abstract: The semiconductor device comprises a first insulation film 26 formed over a semiconductor substrate 10, first conductor plug 32 buried in a first contact hole 28a formed down to a source/drain diffused layer 22, a capacitor 44 formed over the first insulation film 26, a first hydrogen diffusion preventing film 48 formed over the first insulation film 26, covering the capacitor 44, a second insulation film 50 formed over the first hydrogen diffusion preventing film and having the surface planarized, a second hydrogen diffusion preventing film 52 formed over the first hydrogen diffusion preventing film 26 and having the surface planarized, a second hydrogen diffusion preventing film 52 formed over the second insulation film 50, second conductor plug 62 buried in a second contact hole 56 formed down to the lower electrode 38 or the upper electrode 42 of the capacitor 44, a third conductor plug 62 buried in a third contact hole 58 formed down to the first conductor plug 32, and an interconnection 64 connected to

Abstract: A fuel cell system includes a fuel cell stack formed by stacking a plurality of power generation cells, and an ejector for supplying a fuel gas to the fuel cell stack. A flow rectifier for rectifying the flow of the fuel gas is provided at a portion of an insulating plate of the fuel cell stack connecting the ejector and the fuel gas supply passage. The flow rectifier includes an opening having a laterally elongated shape in correspondence with the bottom of the fuel gas supply passage having a laterally elongated shape, and a plurality of holes provided above the opening.

Abstract: An Al2O3 film with a thickness greater than that of a wiring is formed as a protective film, and then the Al2O3 film is polished by CMP until a conductive barrier film is exposed. Namely, CMP is applied to the Al2O3 film by utilizing the conductive barrier film as a stopper film. Next, a silicon oxide film is formed over the entire surface by, for example, a high-density plasma method, and then the surface thereof is flattened. Subsequently, another Al2O3 film is formed on the silicon oxide film as a protective film for preventing intrusion of hydrogen or moisture. Further, another silicon oxide film is formed on the Al2O3 film, for example, by a high-density plasma method. Then, a via hole reaching the conductive barrier film is formed through the silicon oxide film, the Al2O3 film and the silicon oxide film, and then a W plug is embedded therein.

Abstract: In this fuel cell, among a pair of separators in which an electrically conductive portion which is made from an electrically conducting material is surrounded by an insulating portion which is made from an insulating material, a cell side terminal is provided in the inner surface of the insulating portion of at least one said separator, and extends from its interior circumferential side to its outer perimeter side, and is able to electrically connect the interior and exterior of the cell. This cell side terminal is made from a metallic plate, and its inner circumferential side end portion contacts the membrane electrode assembly, while its outer perimeter side end portion extends to the outer perimeter side of the insulating portion. This outer perimeter side end portion can be connected to a measurement side terminal.

Abstract: A fuel cell stack (10) includes a first sub-stack (12), a second sub-stack (14), and a third sub-stack (16) disposed in the flow direction of an oxidizing gas. An intermediate plate (18a) is interposed between the first and second sub-stacks (12, 14), and an intermediate plate (18b) is interposed between the second and third sub-stacks (14, 16). In this fuel stack (10), the flow of an oxidizing gas is set such that the oxidizing gas flows in series in the direction from the first sub-stack (12) to the third sub-stack (16). Between the sub-stacks additional oxidizing gas supplies (70,74) are provided through which oxidizing gas of lower humidity than the humidity of the oxidizing gas entering the first sub-stack is supplied. This arrangement allows an efficient management of the humidity water content of the oxidizing gas with sufficient moisturizing of the solid polymer membrane whilst avoiding excessive condensation of water vapour within the stack.

Abstract: A method for manufacturing a semiconductor device including, forming a first insulating film above a silicon substrate, forming an impurity layer in the first insulating film by ion-implanting impurities into a predetermined depth of the first insulating film, and modifying the impurity layer to a barrier insulating film by annealing the first insulating film after the impurity layer is formed, is provided.

Abstract: A semiconductor device that includes a metal wiring formed on the insulating film and having a main wiring portion laminated with a plurality of metal films and a metal protection film formed at least on the upper surfaces of the main wiring portion and made of a precious metal material.

Abstract: There is provided a method for manufacturing a semiconductor device, including, forming a first insulating film on a semiconductor substrate, forming a capacitor on the first insulating film, forming a second insulating film covering the capacitor, forming a metal wiring on the second insulating film, forming a first capacitor protective insulating film covering the metal wiring and the second insulating film, forming an insulating sidewall on a side of the metal wiring, forming a third insulating film on the insulating sidewall, forming a hole by etching the third insulating film under a condition that an etching rate of the insulating sidewall would be lower than that of the third insulating film, and forming a conductive plug inside the hole.

Abstract: First and second fuel cell stacks having a simple and compact structure are connected in parallel to each other to enable ensuring a desired electric power generating performance. The first and second fuel cell stacks have the same structure and are arranged in parallel to each other with polarities thereof reversed. A manifold piping is mounted to one ends of the first and second fuel cell stacks. In order to supply an oxidizer gas, a fuel gas, and a coolant to the first and second fuel cell stacks, at least an oxidizer-gas supply pipe, a fuel-gas supply pipe, and a coolant supply pipe in the manifold piping are provided to be symmetrical with respect to the first and second fuel cell stacks.

Abstract: The present invention provides a cell voltage measuring device for a fuel cell comprising: a contact region provided on or in a separator forming the fuel cell; and a terminal contacting the separator at the contact region to measure cell voltage of the fuel cell, wherein the contact region is defined by a groove formed in the outer periphery of the separator, and wherein, in a state in which the terminal is inserted into the groove and contacts the separator, the entire area of the cross-section of the terminal perpendicular to the longitudinal axis thereof at a contact point is disposed in the groove. Accordingly, contact between the terminal and the separator can be preferably retained.

Abstract: A fuel cell includes cell assemblies connected to each other by a fuel gas connection passage, an oxygen-containing gas connection passage, and a coolant connection passage. A fuel gas adjusting mechanism, an oxygen-containing gas adjusting mechanism, and a coolant adjusting mechanism are connected respectively to the fuel gas connection passage, the oxygen-containing gas connection passage, and the coolant connection passage. These adjusting mechanisms adjust the temperatures in the cell assemblies, the relative humidity in the fuel gas, and the relative humidity in the oxygen-containing gas.

Abstract: A semiconductor device including a semiconductor device, an integrated circuit chip, a sealing resin encapsulating the integrated circuit chip and an insulating waterproof film covering at least a portion of a surface of said sealing resin and preventing penetration of moisture into the sealing resin.

Abstract: A ferroelectric capacitor provided with a ferroelectric film (10a) is formed above a semiconductor substrate, and thereafter a wiring (17) directly connected to electrodes (9a, 11a) of a ferroelectric capacitor is formed. Then, a silicon oxide film (18) covering the wiring (17) is formed. As the silicon oxide film (18), a film which has processability higher than that of an aluminum oxide film is formed. Besides, a degree of damage which occurs in the ferroelectric capacitor when the insulating film is formed is equal to or less than that when an aluminum oxide film is formed.

Abstract: The present invention provides a fuel cell comprising a pair of separators sandwiching outsides of a membrane electrode assembly composed of a pair of electrodes provided on both sides of a solid polymer electrolyte membrane, an outer seal member sandwiched by a pair of separators at a position surrounding an outer periphery of the membrane electrode assembly, an inner seal member sandwiched by one of the pair of separators and an outer periphery of the electrolyte membrane, and a backing member opposing to the inner seal member interposing the electrolyte membrane, wherein steps are formed at contact surfaces of the inner seal member and the outer seal member on one of the pair of separators.

Abstract: There is provided a coolant manifold that is installed to a fuel cell stack so as to distribute coolant through the fuel cell stack, which is constituted by stacking a plurality of unit cells and has more than one communication holes for coolant supply and at least one communication hole for coolant discharge, in which the coolant flows in an order from the communication holes for coolant supply through a plurality of the unit cells to the communication hole for coolant discharge. The coolant manifold includes a manifold body having a manifold chamber that extends along an alignment direction of the communication holes for coolant supply, and an external communication part having an external communication hole for communicating the manifold chamber with external. A center axis of the external communication hole is placed unparallel and non-vertical relative to a center axis of each communication hole for coolant supply.