Patents by Inventor Hideaki Kuwabara

Hideaki Kuwabara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method for manufacturing the same
    Patent number: 9490309
    Abstract: An object is to realize a hermetically sealed package which ensures long-term airtightness inside the package by sealing using a substrate, or a sealing structure for reducing destruction caused by pressure from the outside. A frame of a semiconductor material is provided over a first substrate, which is bonded to a second substrate having a semiconductor element so that the semiconductor element is located inside the frame between the first substrate and the second substrate. The frame may be formed using, as frame members, two L-shaped semiconductor members in combination or four or more stick semiconductor members in combination.
    Type: Grant
    Filed: May 1, 2014
    Date of Patent: November 8, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Hideaki Kuwabara
  • ELECTRONIC DEVICE
    Publication number: 20160313769
    Abstract: A highly convenient electronic device used while being worn on a body is provided. The electronic device is an arm-worn electronic device including a display panel, a power storage device, a circuit, and a sealing structure. The display panel displays an image with power supplied from the power storage device. The circuit includes an antenna and charges the power storage device wirelessly. Inside the sealing structure, the display panel, the power storage device, and the circuit are provided. The sealing structure includes a portion that transmits visible light. The sealing structure can be worn on an arm or is connected to a structure body that can be worn on an arm.
    Type: Application
    Filed: April 11, 2016
    Publication date: October 27, 2016
    Inventors: Yusuke YOSHITANI, Hideaki KUWABARA, Natsuko TAKASE
  • SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20160268359
    Abstract: One object is to provide a semiconductor device with a structure which enables reduction in parasitic capacitance sufficiently between wirings. In a bottom-gate type thin film transistor including a stacked layer of a first layer which is a metal thin film oxidized partly or entirely and an oxide semiconductor layer, the following oxide insulating layers are formed together: an oxide insulating layer serving as a channel protective layer which is over and in contact with a part of the oxide semiconductor layer overlapping with a gate electrode layer; and an oxide insulating layer which covers a peripheral portion and a side surface of the stacked oxide semiconductor layer.
    Type: Application
    Filed: May 23, 2016
    Publication date: September 15, 2016
    Inventors: Shunpei YAMAZAKI, Junichiro SAKATA, Hiroki OHARA, Hideaki KUWABARA
  • Light emitting device and manufacturing method of the same
    Patent number: 9412804
    Abstract: The present invention is directed to a light emitting device structured so as to increase the amount of light which is taken out in a certain direction after emitted from a light emitting element, and a method of manufacturing this light emitting device. An upper end portion of an insulating material 19 that covers an end portion of a first electrode 18 is formed to have a curved surface having a radius of curvature, a second electrode 23a is formed to have a slant face as going from its center portion toward its end portion along the curved surface. Light emitted from a light emitting layer comprising an organic material 20 that is formed on the second electrode 23a is reflected at the slant face of the second electrode 23a to increase the total amount of light taken out in the direction indicated by the arrow in FIG. 1A.
    Type: Grant
    Filed: August 11, 2014
    Date of Patent: August 9, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Satoshi Seo, Hideaki Kuwabara
  • Light Emitting Device and Method of Manufacturing the Same
    Publication number: 20160218160
    Abstract: To provide a light emitting device high in reliability with a pixel portion having high definition with a large screen. According to a light emitting device of the present invention, on an insulator (24) provided between pixel electrodes, an auxiliary electrode (21) made of a metal film is formed, whereby a conductive layer (20) made of a transparent conductive film in contact with the auxiliary electrode can be made low in resistance and thin. Also, the auxiliary electrode (21) is used to achieve connection with an electrode on a lower layer, whereby the electrode can be led out with the transparent conductive film formed on an EL layer. Further, a protective film (32) made of a film containing hydrogen and a silicon nitride film which are laminated is formed, whereby high reliability can be achieved.
    Type: Application
    Filed: April 6, 2016
    Publication date: July 28, 2016
    Inventors: Shunpei Yamazaki, Masaaki Hiroki, Masakazu Murakami, Hideaki Kuwabara
  • METHOD FOR MANUFACTURING OXIDE SEMICONDUCTOR DEVICE
    Publication number: 20160190175
    Abstract: An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced.
    Type: Application
    Filed: March 8, 2016
    Publication date: June 30, 2016
    Inventors: Shunpei Yamazaki, Hiroki Ohara, Toshinari Sasaki, Kosei Noda, Hideaki Kuwabara
  • Light Emitting Device and Method of Manufacturing the Same
    Publication number: 20160190214
    Abstract: A light-emitting device structured so as to increase the amount of light taken out in a certain direction is provided as well as a method of manufacturing this light emitting device. As a result of etching treatment, an upper edge portion of an insulator (19) is curved to have a radius of curvature, a slope is formed along the curved face while partially exposing layers (18c and 18d) of a first electrode, and a layer (18b) of the first electrode is exposed in a region that serves as a light emitting region. Light emitted from an organic compound layer (20) is reflected by the slope of the first electrode (layers 18c and 18d) to increase the total amount of light taken out in the direction indicated by the arrow in FIG. 1A.
    Type: Application
    Filed: March 8, 2016
    Publication date: June 30, 2016
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Satoshi SEO, Hideaki Kuwabara
  • Semiconductor device and manufacturing method thereof
    Patent number: 9368514
    Abstract: [Problem] A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high. [Solving Means] By performing the formation of the pixel electrode 127, the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized.
    Type: Grant
    Filed: June 12, 2015
    Date of Patent: June 14, 2016
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei Yamazaki, Hideaki Kuwabara, Yasuyuki Arai
  • Semiconductor device and method of manufacturing same
    Patent number: 9362534
    Abstract: A FET is formed on a semiconductor substrate, a curved surface having a radius of curvature is formed on an upper end of an insulation, a portion of a first electrode is exposed corresponding to the curved surface to form an inclined surface, and a region defining a luminescent region is subjected to etching to expose the first electrode. Luminescence emitted from an organic chemical compound layer is reflected by the inclined surface of the first electrode to increase a total quantity of luminescence taken out in a certain direction.
    Type: Grant
    Filed: October 15, 2015
    Date of Patent: June 7, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Satoshi Seo, Hideaki Kuwabara
  • Semiconductor wearable device
    Patent number: 9362416
    Abstract: One object is to provide a semiconductor device with a structure which enables reduction in parasitic capacitance sufficiently between wirings. In a bottom-gate type thin film transistor including a stacked layer of a first layer which is a metal thin film oxidized partly or entirely and an oxide semiconductor layer, the following oxide insulating layers are formed together: an oxide insulating layer serving as a channel protective layer which is over and in contact with a part of the oxide semiconductor layer overlapping with a gate electrode layer; and an oxide insulating layer which covers a peripheral portion and a side surface of the stacked oxide semiconductor layer.
    Type: Grant
    Filed: May 1, 2015
    Date of Patent: June 7, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Junichiro Sakata, Hiroki Ohara, Hideaki Kuwabara
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20160133683
    Abstract: (OBJECT) The object is to provide a lightened semiconductor device and a manufacturing method thereof by pasting a layer to be peeled to various base materials. (MEANS FOR SOLVING THE PROBLEM) In the present invention, a layer to be peeled is formed on a substrate, then a seal substrate provided with an etching stopper film is pasted with a binding material on the layer to be peeled, followed by removing only the seal substrate by etching or polishing. The remaining etching stopper film is functioned as a blocking film. In addition, a magnet sheet may be pasted as a pasting member.
    Type: Application
    Filed: January 19, 2016
    Publication date: May 12, 2016
    Inventors: Toru Takayama, Junya MARUYAMA, Yumiko OHNO, Masakazu MURAKAMI, Toshiji HAMATANI, Hideaki KUWABARA, Shunpei YAMAZAKI
  • Semiconductor device and manufacturing method thereof
    Publication number: 20160126299
    Abstract: As a result of miniaturization of a pixel region associated with an improvement in definition and an increase in a substrate size associated with an increase in area, defects due to precision, bending, and the like of a mask used at the time of evaporation have become issues. A partition including portions with different thicknesses over a pixel electrode (also referred to as a first electrode) in a display region and in the vicinity of a pixel electrode layer is formed, without increasing the number of steps, by using a photomask or a reticle provided with an auxiliary pattern having a light intensity reduction function made of a diffraction grating pattern or a semi-transmissive film.
    Type: Application
    Filed: December 23, 2015
    Publication date: May 5, 2016
    Applicant: Semiconductor Energy Laboratory Co., Inc.
    Inventors: Hideaki KUWABARA, Hideto OHNUMA
  • ELECTRONIC DEVICE
    Publication number: 20160116941
    Abstract: A novel electronic device is provided. Alternatively an electronic device of a novel embodiment is provided. An electronic device includes a ring portion and a display portion. The display portion is flexible. The display portion has a top surface and a first side surface in contact with at least one side of the top surface. The first side surface has a curved surface. The top surface includes a first display region. The first side surface includes a second display region. The first display region and the second display region are continuously provided. The electronic device is mounted such that the ring portion is in contact with a user's finger.
    Type: Application
    Filed: October 22, 2015
    Publication date: April 28, 2016
    Inventors: Hideaki KUWABARA, Masaaki HIROKI
  • SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    Publication number: 20160118417
    Abstract: An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.
    Type: Application
    Filed: December 31, 2015
    Publication date: April 28, 2016
    Inventors: Shunpei Yamazaki, Junichiro Sakata, Hiroyuki Miyake, Hideaki Kuwabara, Tatsuya Takahashi
  • Light Emitting Device, Method of Preparing the Same and Device for Fabricating the Same
    Publication number: 20160118445
    Abstract: A light emitting device having a high definition, a high aperture ratio and a high reliability is provided. The present invention realizes a high definition and a high aperture ratio for a flat panel display of full colors using luminescent colors of red, green and blue without being dependent upon the film formation method and deposition precision of an organic compound layer by forming the laminated sections 21, 22 by means of intentionally and partially overlapping different organic compound layers of adjacent light emitting elements. Moreover, the protective film 32a containing hydrogen is formed and the drawback in the organic compound layer is terminated with hydrogen, thereby realizing the enhancement of the brightness and the reliability.
    Type: Application
    Filed: January 6, 2016
    Publication date: April 28, 2016
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei YAMAZAKI, Masaaki HIROKI, Masakazu MURAKAMI, Hideaki KUWABARA
  • ELECTRONIC DEVICE
    Publication number: 20160109852
    Abstract: A novel electronic device is provided. Alternatively an electronic device of a novel embodiment is provided. An electronic device includes a support and a display portion. The support has a first curved surface. The display portion is provided over the support. The display portion has a top surface and a side surface in contact with at least one side of the top surface. The side surface has a second curved surface. The top surface includes a first display region. The side surface includes a second display region. The first display region and the second display region are continuously provided.
    Type: Application
    Filed: October 14, 2015
    Publication date: April 21, 2016
    Inventors: Hideaki KUWABARA, Masaaki HIROKI
  • Light emitting device having insulator between pixel electrodes and auxiliary wiring in contact with the insulator
    Patent number: 9312323
    Abstract: To provide a light emitting device high in reliability with a pixel portion having high definition with a large screen. According to a light emitting device of the present invention, on an insulator (24) provided between pixel electrodes, an auxiliary electrode (21) made of a metal film is formed, whereby a conductive layer (20) made of a transparent conductive film in contact with the auxiliary electrode can be made low in resistance and thin. Also, the auxiliary electrode (21) is used to achieve connection with an electrode on a lower layer, whereby the electrode can be led out with the transparent conductive film formed on an EL layer. Further, a protective film (32) made of a film containing hydrogen and a silicon nitride film which are laminated is formed, whereby high reliability can be achieved.
    Type: Grant
    Filed: July 11, 2014
    Date of Patent: April 12, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masaaki Hiroki, Masakazu Murakami, Hideaki Kuwabara
  • Semiconductor Device and Method of Manufacturing Same
    Publication number: 20160093835
    Abstract: A FET is formed on a semiconductor substrate, a curved surface having a radius of curvature is formed on an upper end of an insulation, a portion of a first electrode is exposed corresponding to the curved surface to form an inclined surface, and a region defining a luminescent region is subjected to etching to expose the first electrode. Luminescence emitted from an organic chemical compound layer is reflected by the inclined surface of the first electrode to increase a total quantity of luminescence taken out in a certain direction.
    Type: Application
    Filed: October 15, 2015
    Publication date: March 31, 2016
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Satoshi Seo, Hideaki Kuwabara
  • SECONDARY BATTERY MODULE AND POWER FEEDING SYSTEM
    Publication number: 20160094079
    Abstract: A secondary battery module capable of feeding power to a wearable device in a non-contact manner is provided. A power feeding system for an electronic device is provided. The power feeding system includes a secondary battery module and an electronic device. The secondary battery module includes a flexible secondary battery, a power sending portion for non-contact power transmission, a flexible thermoelectric power generating device, and a belt portion storing the flexible secondary battery and the flexible thermoelectric power generating device. The electronic device includes a power receiving portion for non-contact power transmission and is capable of power transmission from the power sending portion for non-contact power transmission which is included in the secondary battery module to the power receiving portion for non-contact power transmission which is included in the electronic device.
    Type: Application
    Filed: September 23, 2015
    Publication date: March 31, 2016
    Inventors: Masaaki HIROKI, Junpei MOMO, Hideaki KUWABARA
  • Finger ring type portable information terminal
    Patent number: D753108
    Type: Grant
    Filed: April 3, 2014
    Date of Patent: April 5, 2016
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Hideaki Kuwabara, Masaaki Hiroki