Abstract: A wiring substrate is provided. The wiring substrate includes a multilayer wiring structure and a stiffener. The multilayer wiring structure includes: a plurality of insulating layers; a plurality of wiring patterns; and a plurality of chip mounting pads which are electrically connected to the wiring patterns and on which a semiconductor chip is flip-chip mounted. The stiffener is provided on a portion of the multilayer wiring structure, which is outside of a mounting area on which the semiconductor chip is flip-chip mounted. A thermal expansion coefficient of the stiffener is substantially equal to that of the semiconductor chip.

Abstract: A method of manufacturing a wiring substrate is disclosed. The method includes: (a) preparing a supporting substrate including a main body and a through electrode penetrating the main body, wherein the supporting substrate includes a first surface and a second surface opposite to the first surface, and a trace is formed on the second surface of the supporting substrate; (b) forming a build-up wiring structure by alternately forming a wiring layer and an insulating layer on the first surface of the supporting substrate; and (c) obtaining a wiring substrate by separating the build-up wiring structure from the supporting substrate. Step (b) includes: forming the wiring layer using the through electrode as a power feeding wiring, and step (c) includes: peeling the build-up wiring structure from the supporting substrate to obtain the wiring substrate.

Abstract: There are provided a step of preparing a dummy chip, a step of forming a cavity in a stiffener substrate, a step of providing a second tape base member on one surface of the stiffener substrate, a step of inserting the dummy chip into the cavity to provide the dummy chip on the second tape base member, a step of sealing the stiffener substrate and the dummy chip with a sealing resin, a step of removing the second tape base member and forming a build-up wiring layer on a surface from which the second tape base member is removed, a step of removing the sealing resin; and a step of peeling the dummy chip from the build-up wiring layer.

Abstract: In a method of removing conductive balls that are left on a mask provided on a substrate having pads thereon, the method includes: (a) making a sheet member close to the mask using a contacting mechanism such that a gap between the sheet member and the mask is set small than a diameter of the conductive balls. The conductive balls are removed in such a manner that the conductive balls are adhered onto the sheet member.

Abstract: A method of forming a conductive bump of the present invention, includes the steps of, preparing a substrate including a connection pad and a protection insulating layer, in which an opening portion is provided on the connection pad, on a surface layer side, arranging a first conductive ball, at least an outer surface portion of which is made of solder, on the connection pad in the opening portion of the protection insulating layer, filling a solder layer in the opening portion by applying a reflow heating to the first conductive ball, arranging a second conductive ball on the solder layer, and obtaining a conductive bump which protrudes from an upper surface of the protection insulating layer, by joining the solder layer and the second conductive ball by a reflow heating.

Abstract: A metallic film 43 that becomes the matrix of pad 32 is formed on semiconductor substrate 41. Next, through hole 31 is formed in the semiconductor substrate 41 facing the metallic film 43 at the portion corresponding to an area where the pad 32 is formed. Thereafter, penetration electrode 17 is formed in through hole 31. Next, penetration portion 49 to expose the side of the penetration electrode 17 is formed in the semiconductor substrate 41. Next, an insulative member 16 is formed to be filled up in at least the penetration portion 49. After that, the pad 32 is formed by patterning the metallic film 43.

Abstract: A method of manufacturing a semiconductor device having a through electrode, includes forming through holes 36 in a substrate 31, forming a first metal layer 39 from one surface side of the substrate and pasting a protection film 40 on one surface of the substrate, forming through electrodes by filling the through holes with a second metal by means of an electroplating of the second metal 42 applied from other surface of the substrate while using the first metal layer as a power feeding layer, removing the protection film 40, and removing the first metal layer 39 located in areas other than peripheral portions of the through electrodes.

Abstract: A method of dividing a substrate 10 into individual pieces by setting dividing lines A used to dividing the substrate 10 into individual pieces at a predetermined interval in a vertical direction and a horizontal direction and then dividing the substrate 10 along the dividing lines A, includes a step of forming chamfering patterns 14 to form through holes, which are used to chamfer corner portions of individual pieces of the substrate, in respective intersection points between the dividing lines on the substrate, a step of forming chamfering through holes by etching the substrate 10, and a step of obtaining the individual pieces of the substrate by separating the substrate in the vertical direction and the horizontal direction along the dividing lines A respectively.

Abstract: A semiconductor package including a base body having a recessed portion for installing an electronic component on one surface, the recessed portion including an inner bottom surface, inclined surface and a shoulder part and a wiring pattern having one end positioned in the inner bottom surface of the recessed portion and the other end extending to an outside region of the recessed portion beyond the shoulder part of the recessed portion. The shoulder part of the recessed portion is a smoothly curved surface.

Abstract: A method of manufacturing a substrate, includes: (a) forming the through hole by etching the silicon substrate from a first surface of the silicon substrate by a Bosch process; (b) forming a thermal oxide film such that the thermal oxide film covers the first surface of the silicon substrate, a second surface of the silicon substrate opposite to the first surface, and a surface of the silicon substrate corresponding to a side surface of the through hole, by thermally oxidizing the silicon substrate where the through hole is formed; (c) removing the thermal oxide film; (d) forming an insulating film such that the insulating film covers the first and second surfaces of the silicon substrate and the surface of the silicon substrate corresponding to the side surface of the through hole; and (e) forming the through electrode in the through hole on which the insulating film is formed.

Abstract: A solder resist having first opening portions on positions corresponding to electrodes and a second opening portion on a mask providing position is formed on the substrate. A flux mask whose thickness is substantially same as the solder resist is arranged in the second opening portion and then a flux is filled in the first opening portions. The flux mask is removed and then a solder ball mounting mask is arranged over the substrate such that its supporting portion is positioned in the second opening portion. Solder balls are mounted on the flux formed on the electrodes by using the solder ball mounting mask. The solder ball mounting mask is removed and then the solder balls are joined to the electrodes by executing the heating process.

Abstract: The present disclosure relates to a method of manufacturing a substrate. The method includes: (a) forming through holes by applying an anisotropic etching to a silicon substrate from a first surface of the silicon substrate; (b) forming a first insulating film to cover the first surface of the silicon substrate, surfaces of the silicon substrate exposed from the through holes, and a second surface of the silicon substrate opposite to the first surface; (c) forming an opening in a portion of the first insulating film provided on the second surface, the portion of the first insulating film corresponding to an area in which the through holes are formed; (d) etching the silicon substrate using the first insulating film provided on the second surface as a mask, thereby forming a cavity in the silicon substrate; and (e) removing the first insulating film.

Abstract: A method of forming solder connection portions on first electrode pads and on second electrode pads, comprises a first step of arranging solder balls on the first electrode pads by arranging a first mask on a base mask; a second step of arranging solder balls on the second electrode pads by arranging a second mask on the base mask; and a third step of melting the solder balls. The base mask has first opening portions corresponding to the first electrode pads and second opening portions corresponding to the second electrode pads and having a size different from that of the first opening portions. The first mask has opening portions corresponding to the first opening portions and covering the second opening portions. The second mask has opening portions corresponding to the second opening portions and covers the first opening portions.

Abstract: An apparatus for arranging magnetic solder balls includes: a stage for placing and fixing the substrate thereon; a magnet which is incorporated in the stage and is movable in parallel with a lower surface of the placed and fixed substrate so as to cause a magnetic force to act in an upward direction of the stage; and a mask frame capable of being positioned above the stage. An arranging method using this arranging apparatus is also provided. An apparatus for arranging magnetic solder balls includes: a stage for placing and fixing the substrate thereon; a mask frame capable of being positioned above the stage; and a magnetic generator which is movable above the mask frame and causes a magnetic force to act on the stage. An arranging method using this arranging apparatus is also provided.

Abstract: A method of mounting a conductive ball according to the present invention includes the steps of, disposing a mask on a substrate including connection pads, the mask having opening portions corresponding to the connection pad, supplying conductive balls on the mask, arranging the conductive balls on the connection pad of the substrate through the opening portions of the mask by moving the conductive balls to one end side of the mask by ball moving member (a brush), and removing excess conductive balls remaining on a region of the mask where the opening portions are provided, by bonding the excess conductive balls to a ball removal film (adhesive film).

Abstract: A disclosed method for manufacturing a semiconductor device having a structure where a semiconductor element is mounted on a first substrate includes the steps of: bonding the first substrate on which the semiconductor element is mounted and a second substrate made of a material different from a material of the first substrate so as to encapsulate the semiconductor element; forming a first groove in the first substrate and a second groove in the second substrate; and cleaving a portion between the first groove and the second groove so as to individualize the semiconductor device.

Abstract: A semiconductor device made by mounting a light emitting element on a substrate, where an optically-transparent cover with a flat plate shape is installed on the light emitting element and a groove part for suppressing reflection of light emission of the light emitting element is formed in the cover.

Abstract: A substrate and mask aligning apparatus includes a controlling portion 70 for calculating moving data that are applied to eliminate a difference between a present superposed state of the through holes 52 of the mask 50, which comes into contact with the substrate 20 that is loaded on the stage 30, on the pads 22 of the substrate 20 and a scheduled superposed state on the basis of image data from the shooting section 40, 42 and then executing repeatedly an operation to move the stage 30 on the basis of the calculated moving data of the stage.

Abstract: There is provided a conductive ball mounting apparatus for mounting one conductive ball on each of a plurality of connection pads formed on a substrate. The conductive ball mounting apparatus includes: an outer frame; an inner cylinder provided in the outer frame, wherein an upper surface and a lower surface of the inner cylinder are opened; a sieve provided in the inner cylinder, wherein the inner cylinder is partitioned into an upper space and a lower space by the sieve; an inlet port for supplying an air from an outside to the lower space of the inner cylinder; a mask provided to a lower end of the outer frame and having openings, the openings being provided to correspond to conductive ball mounting positions; and an exhaust port for exhausting an air from an upper surface of the mask to the outside and being provided to the lower end of the outer frame, wherein the inner cylinder is adapted to vibrate without being restricted by the outer frame.

Abstract: There is provided a method of mounting one conductive ball on each of a plurality of connection pads on a substrate. The method includes: (a) providing a pre-alignment base including: a support layer formed to allow a flux to pass therethrough; and an alignment layer provided on the support layer and having pockets for containing the conductive ball; (b) applying a paste containing the conductive balls dispersed in the flux onto the alignment layer such that each of the pockets receives one of the conductive balls together with the flux; (c) aligning the pre-alignment base with the substrate such that each of the pockets corresponds to one of the connections pads; and (d) transferring the paste contained in each of the pockets onto the connection pads, thereby mounting the conductive balls along with the flux on the connection pads.