Abstract: A roller nanoimprint apparatus is disclosed which is capable of preventing a workpiece film with nanostructures having been transferred from the mold roller from being uneven in thickness and allowing easy replacement of the mold roller. At least one embodiment of the present invention is directed to a roller nanoimprint apparatus including a mold roller and continuously transferring nanosized protrusions to a surface of a workpiece film by rotating the mold roller, wherein the mold roller is a cylindrical body having an outer circumference surface with nanosized recesses formed thereon, the roller nanoimprint apparatus further includes a fluid container having an elastic film inflatable by injecting fluid into the container, the fluid container being arranged in a region defined by an inner circumference surface of the mold roller, the mold roller is mounted or demounted when the elastic film is shrunken, and the mold roller is supported from the inside when the elastic film is inflated.

Abstract: One aspect according to the present invention includes a battery pack and a shock absorbing device interposed between a battery cell holder and a case body and capable of keeping the battery cell holder and the battery cells not to directly contact with an inner surface of the case body.

Abstract: A substrate treatment apparatus for treating a substrate on which a plurality of patterns are formed adjacently, has a first chamber which has resistance to a chemical and cleans the substrate with the chemical; a second chamber which is disposed above or below the first chamber, has higher pressure resistance than the first chamber, and supercritically dries the substrate; and a gate unit which is provided between the first and second chambers and can be opened/closed.

Abstract: A magnetoresistive device has a first magnetic layer, a nonmagnetic layer, and a second magnetic layer, with the nonmagnetic layer being interposed between the first and second magnetic layers, the first and second magnetic layers having perpendicular magnetic anisotropy. Either the first magnetic layer or the second magnetic layer is made of a ferrimagnetic that has a compensation point around a room temperature.

Abstract: A closed magnetic circuit layer is formed on a ferromagnetic layer serving as a memory layer of a magnetic tunnel junction device, in such a manner that a closed magnetic circuit layer is formed via a metal layer with a spacing at a central portion. With this structure, stable magnetization state can be ensured even for a miniaturized pattern.

Abstract: A magnetic memory element has a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer disposed between these ferromagnetic layers. The non-magnetic layer has an electrical characteristic that is changeable depending on an external magnetic field applied to the non-magnetic layer.

Abstract: A magnetic tunnel junction element includes a first magnetic layer and a second magnetic layer acting as a memory layer, and a first insulating layer sandwiched between the first and second magnetic layers. Further, the magnetic tunnel junction element includes a third magnetic layer on a side of the second magnetic layer opposite from the first insulating layer. This third magnetic layer constitutes a closed magnetic circuit together with the second magnetic layer.

Abstract: In a magnetic memory of the present invention which includes a magnetic memory element composed of at least a first ferromagnetic layer, a non-magnetic layer and a second ferromagnetic layer stacked, a third ferromagnetic layer is provided via at least one conductor layer, on one side of the second ferromagnetic layer the other side being closer to the non-magnetic layer. The magnetic memory elements can thereby be provided via a smaller interval in-between, thereby realizing a magnetic memory having higher density than a conventional magnetic memory. Further, the first conductor layer for supplying a current to provide magnetization information can be disposed in the vicinity of the second ferromagnetic layer as a storage layer, thereby providing a magnetic memory capable of generating magnetic poles sufficient to reverse magnetization even by a small current, and low power consumption.

Abstract: An inexpensive surface treatment solution that can selectively reduce the average roughness (Ra) of the surface of a polysilicon film formed by crystallization on an insulating substrate such as one made from glass with a laser annealing process. The surface treatment solution essentially comprises 0.01 to 0.5 wt % of hydrofluoric acid or 0.5 to 5 wt % of ammonium fluoride, 50.0 to 80.0 wt % of nitric acid and water.

Abstract: A magnetoresistive device has a first magnetic layer, a nonmagnetic layer, and a second magnetic layer, with the nonmagnetic layer being interposed between the first and second magnetic layers, the first and second magnetic layers having perpendicular magnetic anisotropy. Either the first magnetic layer or the second magnetic layer is made of a ferrimagnetic that has a compensation point around a room temperature.

Abstract: In a magnetic memory of the present invention which includes a magnetic memory element composed of at least a first ferromagnetic layer, a non-magnetic layer and a second ferromagnetic layer stacked, a third ferromagnetic layer is provided via at least one conductor layer, on one side of the second ferromagnetic layer the other side being closer to the non-magnetic layer. The magnetic memory elements can thereby be provided via a smaller interval in-between, thereby realizing a magnetic memory having higher density than a conventional magnetic memory. Further, the first conductor layer for supplying a current to provide magnetization information can be disposed in the vicinity of the second ferromagnetic layer as a storage layer, thereby providing a magnetic memory capable of generating magnetic poles sufficient to reverse magnetization even by a small current, and low power consumption.

Abstract: A magnetic memory element has a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer disposed between these ferromagnetic layers. The non-magnetic layer has an electrical characteristic that is changeable depending on an external magnetic field applied to the non-magnetic layer.

Abstract: A closed magnetic circuit layer is formed on a ferromagnetic layer serving as a memory layer of a magnetic tunnel junction device, in such a manner that a closed magnetic circuit layer is formed via a metal layer with a spacing at a central portion. With this structure, stable magnetization state can be ensured even for a miniaturized pattern.