Abstract: A semiconductor memory device has a redundant memory cell array having redundant memory cells arranged in redundant rows and columns and has first and second fuse blocks. The first fuse block has first fuses for corresponding to an address of a row address signal. The second fuse block has second fuses for corresponding to a column address signal. The first fuse block stores an address of a defective row of the memory cell and the second fuse block stores an address of a defective column of the memory cell. Furthermore, the semiconductor memory device has an address matching detector connected with the first and second fuses. The address matching detector checks consistency of the address of the row or column address signal with the address of the defective row or column.

Abstract: A semiconductor memory device has a redundant memory cell array having redundant memory cells arranged in redundant rows and columns and has first and second fuse blocks. The first fuse block has first fuses for corresponding to an address of a row address signal. The second fuse block has second fuses for corresponding to a column address signal. The first fuse block stores an address of a defective row of the memory cell and the second fuse block stores an address of a defective column of the memory cell. Furthermore, the semiconductor memory device has an address matching detector connected with the first and second fuses. The address matching detector checks consistency of the address of the row or column address signal with the address of the defective row or column.

Abstract: A level shift circuit includes first and second inverters and an inversion circuit. The first inverter has a first input terminal and a first output terminal for generating the output signal. The first inverter includes a first transistor having a first current driving capacity. The second inverter has a second input terminal connected to the first output terminal and a second output terminal connected to the first input terminal. The second inverter includes a second transistor having a second current driving capacity smaller than the first capacity. The inversion circuit has an output terminal connected to the first input terminal. The inversion circuit receives an input signal including a first input signal and a second input signal one of which is a one-shot pulse signal. The inversion circuit includes a third transistor having a third current driving capacity smaller than the first capacity and larger than the second capacity.

Abstract: An oscillator circuit having an oscillation period moderately varying such that it is short at high temperature but long at low temperature and wherein a maximum value of oscillation period at low temperature can be set. By coupling a resistance parallel circuit having a resistance element having a resistance value decreasing with increasing temperature and a resistance element having a resistance value nondependent upon temperature at between the main electrodes of PMOST and NMOST, the output signal of an inverter is caused to vary with temperature. A ring oscillator circuit outputs an oscillation period short at high temperature but long at low temperature. Meanwhile, because oscillation period is greatly affected by a resistance value of the resistant element not dependent upon temperature at low temperature, a maximum value of oscillation period can be set.

Abstract: The period of time required for a parallel test can be shortened by widening the application range of the parallel test. In the semiconductor memory device having memory cell portions, there are provided a column controller that simultaneously activates a plurality of columns which are subject to degenerate substitution in a column redundant substitution; and a data read-out circuit that simultaneously reads out the data from a plurality of memory cells as selected by the above plurality of columns.

Abstract: A semiconductor memory device includes a redundancy circuit having predecode signal lines, a fuse predecode circuit, fuse decode circuit and an address decode circuit. The fuse predecode circuit is connected to the fuse predecode signal lines. The fuse predecode circuit includes drivers each of which generates a drive signal in response to one of first address signals received by the fuse predecode circuit. The fuse predecode circuit further includes terminal circuits connected to the predecode signal lines for latching signals appeared thereon, and fuse circuits each of which is connected between one of the predecode signal lines and a first potential source. Each of the fuse circuits includes a transistor having a control terminal connected to one of the drivers and a fuse connected to the transistor in series.

Abstract: A semiconductor memory device includes a redundancy circuit having predecode signal lines, a fuse predecode circuit, fuse decode circuit and an address decode circuit. The fuse predecode circuit is connected to the fuse predecode signal lines. The fuse predecode circuit includes drivers each of which generates a drive signal in response to one of first address signals received by the fuse predecode circuit. The fuse predecode circuit further includes terminal circuits connected to the predecode signal lines for latching signals appeared thereon, and fuse circuits each of which is connected between one of the predecode signal lines and a first potential source. Each of the fuse circuits includes a transistor having a control terminal connected to one of the drivers and a fuse connected to the transistor in series.

Abstract: The period of time required for a parallel test can be shortened by widening the application range of the parallel test. In the semiconductor memory device having a memory cell portions (5-A, 5-B), there are provided a column control means (1˜4) for simultaneously activating a plurality of columns which are subject to the degenerate substitution in the column redundant substitute; and a data read-out means (6-A, 6-B, SDBP-B0, SDBP-B1, and 9) for simultaneously reading out the data from a plurality of memory cells as selected by the above plurality of columns.

Abstract: A semiconductor memory circuit comprises a sense amplifier, a first data storing circuit for temporally storing and outputting the data from the sense amplifier in response to a latch signal and erasing the stored data in response to a first clear signal, a first determination circuit for determining whether the first data storing circuit stores the data and outputting a first determination signal representing the determination.

Abstract: A semiconductor memory circuit comprises a sense amplifier, a first data storing circuit for temporally storing and outputting the data from the sense amplifier in response to a latch signal and erasing the stored data in response to a first clear signal, a first determination circuit for determining whether the first data storing circuit stores the data and outputting a first determination signal representing the determination.

Abstract: A power circuit includes an internal voltage regulation portion, a response time regulation portion, p-channel type field-effect transistors (FET) which serve as a voltage transformation portion, and a clock signal detection circuit. An external voltage input to the power circuit is transformed into an internal voltage which is set by a reference voltage, and the variance of the internal voltage may be compensated by the internal voltage regulation portion. Also, the response speed of the internal voltage regulation portion to the variance of the internal voltage may be regulated by the response time regulation portion. The clock signal detection portion detects a clock signal and switches an n-channel type FET in the response time regulation portion to an active state, thereby enhancing the response speed of the internal voltage regulation portion. Accordingly, the power circuit ensures stabilized output of power and effective power saving as well.