Patents by Inventor Hideki Iwamoto

Hideki Iwamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11513313
    Abstract: The lens apparatus includes an optical system, a voltage transformation unit, and an actuator. A first lens unit of the optical system is moved toward the object side during zooming from a wide-angle end to a telephoto end. The voltage transformation unit includes coils. The actuator is configured to be driven by a voltage output from the voltage transformation unit and to move a part of the lens units in the optical system during focusing. The coil is disposed at a position that is separated from a position of a most object-side surface of the optical system at the wide-angle end, toward the image side by a maximum or more moving amount of the first lens unit, and is closer to the object side than a most image-side surface of the optical system at the wide-angle end.
    Type: Grant
    Filed: August 26, 2019
    Date of Patent: November 29, 2022
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Hideki Sakai, Tadanori Okada, Shunji Iwamoto
  • Patent number: 11509284
    Abstract: An acoustic wave device includes a piezoelectric layer, an IDT electrode, a high-acoustic-velocity support substrate, and a low-acoustic-velocity film. The high-acoustic-velocity support substrate is located on an opposite side of the piezoelectric layer from the IDT electrode in the thickness direction of the piezoelectric layer. The low-acoustic-velocity film is disposed between the high-acoustic-velocity support substrate and the piezoelectric layer in the thickness direction. The high-acoustic-velocity support substrate includes a base region and a surface region disposed nearer to the low-acoustic-velocity film than the base region in the thickness direction and whose crystal quality is worse than that of the base region. The surface region includes first and second layers disposed nearer to the base region than the first layer in the thickness direction and whose crystal quality is better than that of the first layer.
    Type: Grant
    Filed: June 11, 2019
    Date of Patent: November 22, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Hideki Iwamoto
  • Patent number: 11509282
    Abstract: An acoustic wave device includes a support substrate including silicon, a piezoelectric layer provided directly or indirectly on the support substrate, and an interdigital transducer (IDT) electrode provided on the piezoelectric layer. When a wavelength defined by an electrode finger pitch of the IDT electrode is ?, a thickness of the piezoelectric layer is about 1? or less. VL, which is an acoustic velocity of a longitudinal wave component of a bulk wave propagating through the piezoelectric layer, satisfies Unequal Equation (2) below in relation to an acoustic velocity VSi-1 determined by Equation (1) below: VSi-1=(V2)1/2 (m/sec)??Equation (1), VSi-1?VL??Unequal Equation (2), V2 in Equation (1) is a solution of Equation (3), and Ax3+Bx2+Cx+D=0??Equation (3).
    Type: Grant
    Filed: May 28, 2020
    Date of Patent: November 22, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Shou Nagatomo, Hideki Iwamoto
  • Patent number: 11509280
    Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.
    Type: Grant
    Filed: November 12, 2019
    Date of Patent: November 22, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Munehisa Watanabe, Hideki Iwamoto, Hajime Kando, Syunsuke Kido
  • Publication number: 20220368305
    Abstract: An acoustic wave device includes a support substrate, a piezoelectric layer, and an IDT electrode. The piezoelectric layer is over the support substrate. The IDT electrode is on the piezoelectric layer, and includes a plurality of electrode fingers. An intersecting width of the plurality of electrode fingers is equal to or smaller than about 5?.
    Type: Application
    Filed: July 28, 2022
    Publication date: November 17, 2022
    Inventors: Hideki IWAMOTO, Katsuya DAIMON, Tetsuya KIMURA
  • Patent number: 11502664
    Abstract: An electronic component includes a support member, a piezoelectric film, and an interdigital transducer. The support member includes silicon as a primary component. The piezoelectric film is provided directly or indirectly on the support member. The interdigital transducer includes a plurality of electrode fingers. The plurality of electrode fingers are provided side by side separately from each other. The interdigital transducer is provided on the principal surface of the piezoelectric film. The film thickness of the piezoelectric film is about 3.5 ? or less, where ? denotes the wavelength of an acoustic wave determined by the electrode finger pitch of the interdigital transducer. In the support member, the high-impurity-concentration region is further from the piezoelectric film than the low-impurity-concentration region.
    Type: Grant
    Filed: June 4, 2020
    Date of Patent: November 15, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Takuya Koyanagi, Hideki Iwamoto
  • Patent number: 11496226
    Abstract: In an acoustic wave device, an antenna end resonator that is electrically closest to a first terminal is a first acoustic wave resonator. In each of the first acoustic wave resonator and a second acoustic wave resonator, a thickness of a piezoelectric layer is about 3.5? or less when a wavelength of an acoustic wave is denoted as ?. The first acoustic wave resonator and the second acoustic wave resonator satisfy at least one of a first condition, a second condition, and a third condition. The first condition is a condition that the first acoustic wave resonator further includes a dielectric film provided between the piezoelectric layer and an interdigital transducer electrode, and the second acoustic wave resonator does not include the dielectric film.
    Type: Grant
    Filed: June 29, 2020
    Date of Patent: November 8, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Ryo Nakagawa, Hideki Iwamoto, Tsutomu Takai
  • Patent number: 11482983
    Abstract: An elastic wave device includes a support substrate made of silicon, a piezoelectric film disposed directly or indirectly on the support substrate, and an interdigital transducer electrode disposed on one surface of the piezoelectric film. A higher-order mode acoustic velocity of propagation through the piezoelectric film is equal or substantially equal to an acoustic velocity Vsi=(V1)1/2 of propagation through silicon or higher than the acoustic velocity Vsi, where Vsi is specified by V1 among solutions V1, V2, and V3 with respect to x derived from Ax3+Bx2+Cx+D=0.
    Type: Grant
    Filed: September 26, 2019
    Date of Patent: October 25, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Hideki Iwamoto
  • Patent number: 11476828
    Abstract: An acoustic wave device includes a silicon oxide film, a piezoelectric body, and an interdigital transducer electrode laminated on a support substrate made of silicon. Where a wave length that is determined by an electrode finger pitch of the interdigital transducer electrode is ?, a thickness of the support substrate is greater than or equal to about 3?. An acoustic velocity of the first higher mode that propagates through the piezoelectric body is an acoustic velocity Vsi=(V1)1/2 of bulk waves that propagate in the support substrate, which is determined by V1 out of solutions V1, V2, and V3 of x derived from the mathematical expression Ax3+Bx2+Cx+D=0, or higher than Vsi.
    Type: Grant
    Filed: September 6, 2019
    Date of Patent: October 18, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Takuya Koyanagi, Hideki Iwamoto
  • Patent number: 11469736
    Abstract: In an acoustic wave device, a piezoelectric body is directly or indirectly provided on a high acoustic velocity material layer, an interdigital transducer electrode is directly or indirectly provided on the piezoelectric body, the interdigital transducer electrode includes a first busbar, a second busbar spaced away from the first busbar, a plurality of first electrode fingers, and a plurality of second electrode fingers, and a weighting is applied to the interdigital transducer electrode by providing a floating electrode finger not electrically connected to the first busbar or the second busbar or applied by providing an electrode finger formed by metallizing a gap between the first electrode fingers or a gap between the second electrode fingers to integrate the first electrode fingers or the second electrode fingers.
    Type: Grant
    Filed: November 18, 2019
    Date of Patent: October 11, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Munehisa Watanabe, Hideki Iwamoto, Harunobu Horikawa
  • Patent number: 11463067
    Abstract: In a multiplexer, at least one acoustic wave filter includes a piezoelectric body made of lithium tantalate having Euler angles (?LT=0°±5°, ?LT, ?LT=0°±15°), a support substrate, and an interdigital transducer (IDT) electrode. A frequency fh1_t(n) of a first higher-order mode satisfies below Formulas (3) and (4) in all acoustic wave filters (m) having a higher pass band than at least one acoustic wave filter (n) (n<m?N) in at least one acoustic wave resonator among a plurality of acoustic wave resonators. fh1_t(n)>fu(m) Formula (3). fh1_t(n)<fl(m) Formula (4). Here, fu(m) and fl(m) represent the frequencies of the high-frequency end and the low-frequency end of the pass band in the m acoustic wave filters in Formulas (3) and (4).
    Type: Grant
    Filed: September 5, 2019
    Date of Patent: October 4, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Ryo Nakagawa, Hideki Iwamoto, Tsutomu Takai
  • Patent number: 11463068
    Abstract: An acoustic wave device includes a material layer with Euler angles and an elastic constant at the Euler angles represented by Expression 1, a piezoelectric body including opposing first and second principal surfaces, is laminated directly or indirectly on the material layer and has Euler angles, and whose elastic constant at the Euler angles is represented by the Expression 1 below, and an IDT electrode on at least one of first and second principal surfaces of the piezoelectric body, and in which a wave length determined by an electrode finger pitch is ?.
    Type: Grant
    Filed: September 6, 2019
    Date of Patent: October 4, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Hideki Iwamoto, Tsutomu Takai, Ryo Nakagawa, Takashi Yamane, Masanori Otagawa
  • Patent number: 11456719
    Abstract: An acoustic wave device includes a high-acoustic-velocity support substrate, a low-acoustic-velocity film provided on the high-acoustic-velocity support substrate, a piezoelectric layer provided on the low-acoustic-velocity film, and an IDT electrode provided on the piezoelectric layer. An acoustic velocity of a bulk wave propagating through the high-acoustic-velocity support substrate is higher than an acoustic velocity of an acoustic wave propagating through the piezoelectric layer. An acoustic velocity of a bulk wave propagating through the low-acoustic-velocity film is lower than an acoustic velocity of a bulk wave propagating through the piezoelectric layer. The low-acoustic-velocity film has a first portion and a second portion that is located closer to the high-acoustic-velocity support substrate than the first portion. The first and second portions include the same or similar materials.
    Type: Grant
    Filed: June 1, 2020
    Date of Patent: September 27, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Hideki Iwamoto
  • Publication number: 20220263493
    Abstract: An acoustic wave device includes a supporting substrate, a piezoelectric layer, and an IDT electrode. The piezoelectric layer is on the supporting substrate. The IDT electrode is on the piezoelectric layer. The supporting substrate is a silicon carbide substrate, which has a hexagonal crystal structure. The acoustic wave device uses an SH wave as a main mode.
    Type: Application
    Filed: April 28, 2022
    Publication date: August 18, 2022
    Inventor: Hideki IWAMOTO
  • Publication number: 20220255527
    Abstract: An acoustic wave device includes a support substrate, a piezoelectric layer on the support substrate, and an IDT electrode on the piezoelectric layer and including a plurality of electrode fingers. The support substrate is a silicon carbide substrate including a 3C-SiC cubic crystal structure. The piezoelectric layer is a lithium tantalate layer or a lithium niobate layer. An SH wave is used as a main mode.
    Type: Application
    Filed: April 28, 2022
    Publication date: August 11, 2022
    Inventor: Hideki IWAMOTO
  • Publication number: 20220224305
    Abstract: An acoustic wave device includes a piezoelectric layer and first and second electrodes facing each other in a direction intersecting a thickness direction of the piezoelectric layer. The acoustic wave device utilizes a bulk wave in a thickness-shear primary mode. A material of the piezoelectric layer is lithium niobate or lithium tantalate. At least a portion of each of the first and second electrodes is embedded in the piezoelectric layer.
    Type: Application
    Filed: March 23, 2022
    Publication date: July 14, 2022
    Inventors: Tetsuya KIMURA, Takashi YAMANE, Sho NAGATOMO, Hideki IWAMOTO
  • Publication number: 20220216844
    Abstract: An acoustic wave device includes a piezoelectric layer and first and second electrodes. The first and second electrodes face each other in a direction intersecting with a thickness direction of the piezoelectric layer. The acoustic wave device uses a bulk wave of a thickness-shear primary mode. A material of the piezoelectric layer is lithium niobate or lithium tantalate. The piezoelectric layer is on a first main surface of the silicon substrate. The acoustic wave device further includes a trap region on a side of a second main surface of the piezoelectric layer.
    Type: Application
    Filed: March 25, 2022
    Publication date: July 7, 2022
    Inventors: Takashi YAMANE, Tetsuya KIMURA, Sho NAGATOMO, Katsuya DAIMON, Hideki IWAMOTO
  • Patent number: 11349451
    Abstract: An elastic wave device includes a SiNx layer stacked directly or indirectly on a supporting substrate made of a semiconductor material, a piezoelectric film stacked on directly or indirectly the SiNx layer, and an interdigital transducer electrode stacked directly or indirectly on at least one main surface of the piezoelectric film. In the SiNx layer, x is about 1.34 or more and about 1.66 or less.
    Type: Grant
    Filed: January 8, 2019
    Date of Patent: May 31, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Tsutomu Takai, Koji Yamamoto, Hideki Iwamoto
  • Publication number: 20220131517
    Abstract: An acoustic wave device includes a support substrate, a piezoelectric layer, and an IDT electrode. The support substrate is made of quartz. The piezoelectric layer is provided on the support substrate and is made of LiTaO3. The IDT electrode is on the piezoelectric layer and includes electrode fingers. The IDT electrode is on a negative surface side of the piezoelectric layer. The cut angle of the piezoelectric layer is equal to or more than about 39° Y and equal to or less than about 48° Y.
    Type: Application
    Filed: January 4, 2022
    Publication date: April 28, 2022
    Inventor: Hideki IWAMOTO
  • Publication number: 20220123731
    Abstract: An acoustic wave device includes a support substrate, a piezoelectric layer, and an IDT electrode. The support substrate is made of quartz. The piezoelectric layer is on the support substrate and is made of LiTaO3. The IDT electrode is on the piezoelectric layer and includes electrode fingers. The IDT electrode is on a positive surface side of the piezoelectric layer. The cut angle of the piezoelectric layer is equal to or less than about 49° Y.
    Type: Application
    Filed: January 4, 2022
    Publication date: April 21, 2022
    Inventor: Hideki IWAMOTO