Abstract: An acoustic wave device includes a piezoelectric layer, an IDT electrode, a high-acoustic-velocity support substrate, and a low-acoustic-velocity film. The high-acoustic-velocity support substrate is located on an opposite side of the piezoelectric layer from the IDT electrode in the thickness direction of the piezoelectric layer. The low-acoustic-velocity film is disposed between the high-acoustic-velocity support substrate and the piezoelectric layer in the thickness direction. The high-acoustic-velocity support substrate includes a base region and a surface region disposed nearer to the low-acoustic-velocity film than the base region in the thickness direction and whose crystal quality is worse than that of the base region. The surface region includes first and second layers disposed nearer to the base region than the first layer in the thickness direction and whose crystal quality is better than that of the first layer.

Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film disposed on the supporting substrate, a low-acoustic-velocity film disposed on the high-acoustic-velocity film, a piezoelectric layer disposed on the low-acoustic-velocity film, and an interdigital transducer electrode disposed on the piezoelectric layer. The acoustic velocity of a bulk wave that propagates through the high-acoustic-velocity film is higher than the acoustic velocity of an elastic wave that propagates through the piezoelectric layer. The acoustic velocity of a bulk wave that propagates through the low-acoustic-velocity film is lower than the acoustic velocity of an elastic wave that propagates through the piezoelectric layer. The high-acoustic-velocity film is composed of SiNx, where x<about 0.67.

Abstract: An elastic wave device includes a support substrate made of silicon, a piezoelectric film disposed directly or indirectly on the support substrate, and an interdigital transducer electrode disposed on one surface of the piezoelectric film. A higher-order mode acoustic velocity of propagation through the piezoelectric film is equal or substantially equal to an acoustic velocity Vsi=(V1)1/2 of propagation through silicon or higher than the acoustic velocity Vsi, where Vsi is specified by V1 among solutions V1, V2, and V3 with respect to x derived from Ax3+Bx2+Cx+D=0.

Abstract: A filter device includes a longitudinally coupled resonator elastic wave filter that includes IDT electrodes including low acoustic velocity regions in outer side portions of center regions of the IDT electrodes and high acoustic velocity regions in outer side portions of the low acoustic velocity regions in a direction orthogonal or substantially orthogonal to an elastic wave propagation direction, and defines and functions as a first bandpass filter, and elastic wave resonators that are electrically connected to the longitudinally coupled resonator elastic wave filter.

Abstract: An elastic wave device includes IDT electrodes stacked on a piezoelectric thin film. The IDT electrode includes a plurality of first electrode fingers and a plurality of second electrode fingers. A line connecting the distal ends of the first electrode fingers or the distal ends of the second electrode fingers extends obliquely with respect to a propagation direction of an elastic wave at an oblique angle ?. The oblique angle ? is about 0.4° or more and about 10° or less.

Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film disposed on the supporting substrate, a low-acoustic-velocity film disposed on the high-acoustic-velocity film, a piezoelectric layer disposed on the low-acoustic-velocity film, and an interdigital transducer electrode disposed on the piezoelectric layer. The acoustic velocity of a bulk wave that propagates through the high-acoustic-velocity film is higher than the acoustic velocity of an elastic wave that propagates through the piezoelectric layer. The acoustic velocity of a bulk wave that propagates through the low-acoustic-velocity film is lower than the acoustic velocity of an elastic wave that propagates through the piezoelectric layer. The high-acoustic-velocity film is composed of SiNx, where x< about 0.67.

Abstract: An elastic wave device includes a SiNx layer stacked directly or indirectly on a supporting substrate made of a semiconductor material, a piezoelectric film stacked on directly or indirectly the SiNx layer, and an interdigital transducer electrode stacked directly or indirectly on at least one main surface of the piezoelectric film. In the SiNx layer, x is about 1.34 or more and about 1.66 or less.

Abstract: A filter includes a LiTaO3 piezoelectric layer having a cut angle, a high acoustic velocity support substrate, a low acoustic velocity film, and an IDT electrode. A cut angle ?B of the piezoelectric layer at which a Rayleigh wave spurious response is locally reduced or minimized is determined from a wavelength of the IDT electrode, a film thickness of the IDT electrode, a specific gravity of the IDT electrode, an electrode duty, a thickness of the piezoelectric layer, and a film thickness of the low acoustic velocity film. The Cut angle of the piezoelectric layer satisfies a relationship of ?B?4????B+4.

Abstract: An elastic wave device includes a piezoelectric film, a high acoustic velocity member, a low acoustic velocity film located between the piezoelectric film and the high acoustic velocity member and through which an elastic wave propagates at a lower acoustic velocity than an elastic wave that propagates through the piezoelectric film, and an interdigital transducer electrode including electrode fingers separated from each other and disposed side by side in a first direction. At least one of the electrode fingers includes a first metal layer including first and second main body portions. A recessed portion is located in a central region in the first direction of the electrode finger and is recessed in the thickness direction of the piezoelectric film. A protrusion portion protrudes from at least a portion of the first main body portion in the first direction.

Abstract: An electronic component module includes a piezoelectric film on a support substrate defined by a crystal substrate. An insulation layer is provided on the support substrate. A wiring electrode is electrically connected to an IDT electrode, and at least a portion of the wiring electrode is provided on the insulation layer. An external connection electrode is electrically connected to the wiring electrode. The external connection electrode and the piezoelectric film do not overlap each other in a plan view in a thickness direction of the support substrate. An elastic wave device is mounted on a mounting substrate via the external connection electrode. The mounting substrate has a coefficient of linear expansion different from that of the support substrate. A surface on the piezoelectric film side of the support substrate is a {100} plane.

Abstract: An elastic wave device includes a piezoelectric substrate and an interdigital transducer electrode on the piezoelectric substrate, the piezoelectric substrate including a piezoelectric layer and a high-acoustic-velocity member layer, the piezoelectric layer being stacked on the high-acoustic-velocity member layer. The piezoelectric layer is made of lithium tantalate. Denoting an elastic wave propagation direction as a first direction, and a direction perpendicular or substantially perpendicular to the first direction as a second direction, a central region, low-acoustic-velocity regions, and high-acoustic-velocity regions are provided in the interdigital transducer electrode in the second direction. The low-acoustic-velocity regions include mass-adding films on electrode fingers.

Abstract: An elastic wave device includes a piezoelectric layer, an IDT electrode on the piezoelectric layer, a high-acoustic-velocity member, a low-acoustic-velocity film between the high-acoustic-velocity member and the piezoelectric layer. The piezoelectric layer is made of lithium tantalate, the IDT electrode includes metal layers including an Al metal layer and a metal layer having a higher density than Al. Expression 1 is satisfied: 301.74667?10.83029×TLT?3.52155×TELE+0.10788×TLT2 +0.01003×TELE2 +0.03989×TLT×TELE?0 expression 1, where ? represents a wavelength defined by an electrode finger pitch of the IDT electrode, TLT (%) represents a normalized film thickness of the piezoelectric layer to the wavelength ?, and TELE (%) represents a normalized film thickness of the IDT electrode in terms of Al to the wavelength ?.

Abstract: A weather strip including a bottom wall, a first lateral wall and a second lateral wall and in which an angle between the bottom wall and the first lateral wall is constant and an angle between the bottom wall and the second lateral wall is partially varied in a longitudinal direction is manufactured. The method includes: a first step of pre-forming the angle of the first lateral wall and the angle of the second lateral wall to be constant and equal to or larger than final maximum angles; a second step of regulating a boundary between the bottom wall and the second lateral wall from moving toward the first lateral wall by a regulating member; a third step of partially varying the angle of the second lateral wall by a movable roller; and a fourth step of forming the angle of the first lateral wall by a fine-movable roller.

Abstract: An elastic wave device includes a low acoustic velocity film, a piezoelectric film, and an IDT electrode, which are laminated on a high acoustic velocity material.

Abstract: An acoustic wave device includes a high acoustic velocity support substrate defining and functioning as a high acoustic velocity member, a low acoustic velocity film, a piezoelectric film, and an IDT electrode that are laminated in this order. When a wavelength of an acoustic wave determined by an electrode finger cycle of the IDT electrode is represented by ?, a film thickness of the piezoelectric film is about 1.5? or more and about 3.5? or less. The acoustic velocity of a bulk wave propagating in the high acoustic velocity support substrate is higher than the acoustic velocity of an acoustic wave propagating in the piezoelectric film. The acoustic velocity of a bulk wave propagating in the low acoustic velocity film is lower than the acoustic velocity of an acoustic wave propagating in the piezoelectric film.

Abstract: An elastic wave device includes a support substrate made of silicon, a piezoelectric film disposed directly or indirectly on the support substrate, and an interdigital transducer electrode disposed on one surface of the piezoelectric film. A higher-order mode acoustic velocity of propagation through the piezoelectric film is equal or substantially equal to an acoustic velocity Vsi=(V1)1/2 of propagation through silicon or higher than the acoustic velocity Vsi, where Vsi is specified by V1 among solutions V1, V2, and V3 with respect to x derived from Ax3+Bx2+Cx+D=0.

Abstract: A filter device includes a longitudinally coupled resonator elastic wave filter that includes IDT electrodes including low acoustic velocity regions in outer side portions of center regions of the IDT electrodes and high acoustic velocity regions in outer side portions of the low acoustic velocity regions in a direction orthogonal or substantially orthogonal to an elastic wave propagation direction, and defines and functions as a first bandpass filter, and elastic wave resonators that are electrically connected to the longitudinally coupled resonator elastic wave filter.

Abstract: A SAW filter device defines a filter including a high acoustic velocity member, a low acoustic velocity film, a piezoelectric film, and an IDT electrode are stacked in this order. A comb capacitive electrode electrically coupled to the filter is provided on the piezoelectric film. Where ?c is a wavelength determined by an electrode finger pitch of the comb capacitive electrode, and, among modes of an elastic wave generated by the comb capacitive electrode, VC?(P+SV) is an acoustic velocity of a P+SV wave, VC?SH is an acoustic velocity of a SH wave, and VC?HO is an acoustic velocity of, out of higher-order modes of a SH wave, a higher-order mode at the lowest frequency side, VC?(P+SV)<VC?SH<VC?HO.

Abstract: A weather strip including a bottom wall, a first lateral wall and a second lateral wall and in which an angle between the bottom wall and the first lateral wall is constant and an angle between the bottom wall and the second lateral wall is partially varied in a longitudinal direction is manufactured. The method includes: a first step of pre-forming the angle of the first lateral wall and the angle of the second lateral wall to be constant and equal to or larger than final maximum angles; a second step of regulating a boundary between the bottom wall and the second lateral wall from moving toward the first lateral wall by a regulating member; a third step of partially varying the angle of the second lateral wall by a movable roller; and a fourth step of forming the angle of the first lateral wall by a fine-movable roller.