Abstract: A chemical solution treatment apparatus for dissolving and removing ruthenium-based metal adhering to a substrate by a chemical solution, includes: a chemical solution treatment unit; a reservoir unit; and a chemical solution circulation system. The chemical solution inside treatment unit comprises a chemical solution supplying nozzle, and a recovering mechanism. The reservior unit has a structure having a clearence part to be in contact with the chemical solution so that gas components derived from the ruthenium-based metal dissolved and removed in said chemical solution treatment are volatilized outside the chemical solution during circulation of the chemical solution, and comprises an exhaust duct.

Abstract: A stripping composition comprising at least one of alcohols having an ether-bond in the molecule thereof as component (a), and an anticorrosive as component (b). Furfuryl alcohol or tetrahydrofurfuryl alcohol is preferable as component (a).

Abstract: A nozzle which ejects cleaning solution is disposed above the wafer to be cleaned. The position of the nozzle is such that the cleaning solution ejected from the nozzle drops onto a point on the wafer which is 1 cm or more on this side of the center of rotation. An angle which the direction of ejection of the cleaning solution makes with the wafer surface is set preferably at 5° to 45°.

Abstract: In order to provide a manufacturing method of a semiconductor device which can improve the interconnection lifetime, while controlling the increase in resistance thereof, and, in addition, can raise the manufacturing stability; by applying a plasma treatment to the surface of a copper interconnection 17 with a source gas comprising a nitrogen element being used, a copper nitride layer 24 is formed, and thereafter a silicon nitride film 18 is formed. Hereat, under the copper nitride layer 24, a thin copper silicide layer 25 is formed.

Abstract: In an apparatus, after completion of a CMP (i.e., chemical mechanical polishing) operation of a semiconductor wafer, the thus polished wafer is temporarily stored in a water tank before it is subjected to a post-CMP cleaning operation. During its storage period in the water tank, the wafer is prevented from being chemically attacked by an oxidizing agent contained in an abrasive used in the CMP operation. The apparatus includes: the water tank for storing the wafer therein; a pure water supply pipe for supplying pure water to the water tank; an anticorrosion agent supply pipe for supplying an anticorrosion agent to the pure water; a drain pipe connected with a lower portion of the water tank to discharge the water from the water tank; a return pipe for returning the discharged water to an upper portion of the water tank through a pump and a filter, the return pipe branching-off from the drain pipe; and, valves mounted on these pipes.

Abstract: According to the present invention, high-k film can be etched to provide a desired geometry without damaging the silicon underlying material. A silicon oxide film 52 is formed on a silicon substrate 50 by thermal oxidation, and a high dielectric constant insulating film 54 comprising HfSiOx is formed thereon. Thereafter, polycrystalline silicon layer 56 and high dielectric constant insulating film 54 are selectively removed in stages by a dry etching through a mask of the resist layer 58, and subsequently, the residual portion of the high dielectric constant insulating film 54 and the silicon oxide film 52 are selectively removed by wet etching through a mask of polycrystalline silicon layer 56. A liquid mixture of phosphoric acid and sulfuric acid is employed for the etchant solution. The temperature of the etchant solution is preferably equal to or lower than 200 degree C., and more preferably equal to or less than 180 degree C.

Abstract: A wafer is rotated while cleaning water is sprayed from a nozzle to the surface of this wafer. The cleaning water is an aqueous solution in which 1 to 2.5 ppm of hydrogen gas is dissolved in water with an additional, small amount of ammonium hydroxide. The cleaning water has a pH of 7.5 to 8.0, an oxidation-reduction potential of −0.6 to −0.45 V, and a resistivity of not greater than 1 M&OHgr;·cm. And the cleaning water is reducing water.

Abstract: A photoresist residue remover composition is provided that includes one type or two or more types of fluoride compound and one type or two or more types chosen from the group consisting of glyoxylic acid, ascorbic acid, glucose, fructose, lactose, and mannose (but excluding one that includes ammonium fluoride, a polar organic solvent, water, and ascorbic acid). There is also provided use of the photoresist residue remover composition for removing a photoresist residue and a sidewall polymer remaining after dry etching and after ashing.

Abstract: In order to provide a manufacturing method of a semiconductor device which can improve the interconnection lifetime, while controlling the increase in resistance thereof, and, in addition, can raise the manufacturing stability; by applying a plasma treatment to the surface of a copper interconnection 17 with a source gas comprising a nitrogen element being used, a copper nitride layer 24 is formed, and thereafter a silicon nitride film 18 is formed. Hereat, under the copper nitride layer 24, a thin copper silicide layer 25 is formed.

Abstract: A cleaning solution for semiconductor substrates comprising a nonionic surface active agent of the formula (1) and/or the formula (2), a chelating agent and a chelating accelerator:

Abstract: A copper wiring is desirable for a high-speed logic circuit integrated on a semiconductor substrate, and is patterned through a chemical mechanical polishing, wherein polishing particles are brushed away from the major surface of the resultant semiconductor structure by using aqueous ammonia at 0.0001-0.5 weight percent, catholyte or hydrogen-containing water without damage to the copper wiring, and, thereafter, metallic contaminants such as copper is removed by using washer containing decontaminating agent selected from polycarboxylic acid, ammonium salts thereof and polyaminocarboxylic acid also without damage to the copper wiring.

Abstract: The present invention provides a semiconductor device comprising a metal interconnect having considerably improved electromigration resistance and/or stress migration resistance. The copper interconnect 107 comprises a silicon-lower concentration region 104 and a silicon solid solution layer 106 disposed thereon. The silicon solid solution layer 106 has a structure, in which silicon atoms are introduced within the crystal lattice structure that constitutes the copper interconnect 107 to be disposed within the lattice as inter-lattice point atoms or substituted atoms. The silicon solid solution layer 106 has the structure, in which the crystal lattice structure of copper (face centered cubic lattice; lattice constant is 3.6 angstrom) remains, while silicon atoms are introduced as inter-lattice point atoms or substituted atoms.

Abstract: This invention provides a liquid composition for cleaning a hydrophobic substrate which is used for cleaning a substrate having a surface area on which a water droplet exhibits a contact angle of 60° or more, comprising a phosphonic acid chelating agent having at least two phosphonic groups in one molecule and a polyoxyalkylene alkyl ether type of nonionic surfactant, wherein a droplet of the liquid composition or a dilute aqueous solution thereof exhibits a contact angle of 50° or less to the surface area.

Abstract: A first oxide film and a second oxide film 16 are formed in a first region 13a and a second region 13b, respectively, on the surface of the semiconductor substrate 10, via thermal oxidization method, and the first oxide film is removed while the second oxide film 16 is covered with the resist layer 18 formed thereon, and then the resist layer 18 is removed with a chemical solution containing an organic solvent such as isopropyl alcohol as a main component. Subsequently, a third oxide film 22 having different thickness than the second oxide film 16 is formed in the first region 13a.

Abstract: The stripping agent is sprayed from the tip of the nozzle 33 onto the wafer surface, while the first supply nozzle 33 is actuated to scan from the central portion of the wafer to the outer portion thereof. This operation provides the situation, in which the interface of the residual droplet 38 is pulled back from the center of the wafer to the outer portion of the wafer by the surface tension of the stripping agent supplied from the nozzle. Meanwhile, the second supply nozzle 36 also scans at a same scanning speed as the first supply nozzle 33 scans. Vapor IPA is sprayed from the orifice of the second supply nozzle 36. This provides that vapor IPA is sprayed onto the wafer surface immediately after the stripping agent is sprayed thereon from the first supply nozzle 33, and the residual stripping agent on the wafer surface is efficiently replaced with IPA.

Abstract: An etching/cleaning apparatus is provided, which makes it possible to effectively remove an unnecessary material or materials existing on a semiconductor wafer without damaging the device area with good controllability. The apparatus comprises (a) a rotating means for holding a semiconductor wafer and for rotating the wafer in a horizontal plane; the wafer having a device area and a surface peripheral area on its surface; the surface peripheral area being located outside the device area; and (b) an edge nozzle for emitting an etching/cleaning liquid toward a surface peripheral area of the wafer. The etching/cleaning liquid emitted from the edge nozzle selectively removes an unnecessary material existing in the surface peripheral area.

Abstract: A semiconductor device washing apparatus washes a surface of a semiconductor wafer after a chemical mechanical polishing process is performed for the surface. A roll brush is placed on the surface of the semiconductor wafer so as to contact with the surface. A first chemical liquid tank contains first chemical liquid. A first exhaust nozzle sprays the first chemical liquid onto the surface of the semiconductor wafer. A second chemical liquid tank contains second chemical liquid. A second exhaust nozzle sprays the second chemical liquid onto the surface of the semiconductor wafer. The first chemical liquid and the second chemical liquid are splayed onto the surface of the semiconductor wafer on the condition that the roll brush and the semiconductor wafer are rotated.

Abstract: A stripping composition comprising (a) an anticorrosive agent, (b) a stripping agent and (c) a solvent, wherein the anticorrosive agent (a) is a heterocyclic compound having a nitrogen atom-containing six-membered ring.

Abstract: An etching/cleaning method makes it possible to effectively remove unnecessary materials on a semiconductor wafer, having a surface peripheral area and a surface device area, without damaging the device area. The semiconductor is rotated in a horizontal plane while an etching/cleaning liquid is emitted by an edge nozzle toward the surface peripheral area, thereby selectively etching an unnecessary material in the surface peripheral area. The etching/cleaning liquid emitted from the edge nozzle preferably has an emission direction oriented along a rotation direction of the wafer or outward with respect to a tangent of the wafer formed near a contact point of the liquid with the surface peripheral area of the wafer.

Abstract: According to this invention, residues generated after selectively removing a low-dielectric-constant film such as SiOC can be effectively removed without damage on an insulating film or metal film. Specifically, residues 126 and 128 generated after forming an interconnect trench in an SiOC film 116 are removed using a fluoride-free weak alkaline amine stripper. After the removing step, the wafer is rinsed with isopropyl alcohol and then dried without drying with pure water.