Abstract: A method for removing a ruthenium-containing metal includes the step of applying a remover to a semiconductor substrate. The remover includes a cerium (IV) nitrate salt and nitric acid.

Abstract: In a semiconductor device fabricating process, a copper-based metal film is formed on an insulating layer, and an insulating film is formed on the copper-based metal film. A patterned resist film is formed on the insulating film, and the insulating film is dry-etched using the patterned resist film as a mask to form a hole penetrating through the insulating film. Thereafter, a plasma treatment using an non-oxidizing gas is carried out, and furthermore, a wet treatment using a resist remover liquid is carried out, for removing the resist film and a resist surface hardened layer which was generated in the dry-etching.

Abstract: A photo-resist mask is ashed after the pattern transfer, and is, thereafter, treated with liquid photo-resist remover, wherein photo-resist remover comprises salt produced through interaction between hydrofluoric acid and a base without metal ion, water, water soluble organic solvent and a derivative of benztriazole expressed by the general formula: 1

Abstract: A copper wiring is desirable for a high-speed logic circuit integrated on a semiconductor substrate, and is patterned through a chemical mechanical polishing, wherein polishing particles are brushed away from the major surface of the resultant semiconductor structure by using aqueous ammonia at 0.0001-0.5 weight percent, catholyte or hydrogen-containing water without damage to the copper wiring, and, thereafter, metallic contaminants such as copper is removed by using washer containing decontaminating agent selected from polycarboxylic acid, ammonium salts thereof and polyaminocarboxylic acid also without damage to the copper wiring.

Abstract: In cleaning a substrate which has a metal material and a semiconductor material both exposed at the surface and which has been subjected to a chemical mechanical polishing treatment, the substrate is first cleaned with a first cleaning solution containing ammonia water, etc. and then with a second cleaning solution containing (a) a first complexing agent capable of easily forming a complex with the oxide of said metal material, etc. and (b) an anionic or cationic surfactant.

Abstract: In cleaning a substrate which has a metal material and a semiconductor material both exposed at the surface and which has been subjected to a chemical mechanical polishing treatment, the substrate is first cleaned with a first cleaning solution containing ammonia water, etc. and then with a second cleaning solution containing (a) a first complexing agent capable of easily forming a complex with the oxide of said metal material, etc. and (b) an anionic or cationic surfactant.

Abstract: A capacitor element is formed by setting a contact hole in an interlayer insulating film 3, forming an adhesive film 5 and a lower electrode film 6, forming a capacitor insulating film 7 thereon, crystallizing this capacitor insulating film 7 by applying irradiation of a laser beam, and forming an upper electrode film. This capacitor element brings out characteristics of the metal oxide material to the utmost limit without diminishing the reliability of the element; or, this capacitor film performs a sufficiently high permittivity and a sufficiently high conductivity.

Abstract: In a semiconductor device, a wiring line layer is formed on a substrate. A dielectric constant film is formed on the wiring line layer. An upper protection film is formed on an entire portion of the dielectric constant film. An opening portion is formed through the upper protection film and the dielectric constant film to the wiring line layer. A conductor buried portion formed into the opening portion. The dielectric constant film has a smaller dielectric constant value than those of a silicon oxide film and silicon nitride film. Also, a side protection film may be formed on all side portions of the opening portion.

Abstract: A copper wiring is desirable for a high-speed logic circuit integrated on a semiconductor substrate, and is patterned through a chemical mechanical polishing, wherein polishing particles are brushed away from the major surface of the resultant semiconductor structure by using hydrogen-containing water without damage to the copper wiring, and, thereafter, metallic contaminants such as copper is removed by using washer containing decontaminating agent selected from polycarboxylic acid, ammonium salts thereof and polyaminocarboxylic acid also without damage to the copper wiring.

Abstract: In a method of manufacturing a semiconductor device having a multi-layer interconnection, after a via hole has been formed, the inside of the via hole is cleaned using a cleaning solution containing a complexing agent capable of forming a complex with contaminants of copper type metals.

Abstract: In a method of manufacturing a semiconductor device having a multi-layer interconnection, after a via hole has been formed, the inside of the via hole is cleaned using a cleaning solution containing a complexing agent capable of forming a complex with contaminants of copper type metals.

Abstract: A cleaning liquid for cleaning a substrate having, on its surface, a plurality of exposed insulating films comprising silicon dioxide containing impurities in different concentrations, which comprises an organic alkaline amine compound and hydrogen peroxide. After cleaning with such a cleaning liquid, no step is formed between the insulating films containing impurities in different concentrations.

Abstract: A method for cleaning a substrate having a patterned metal layer formed thereon includes the step of removing metallic contaminants from the substrate by use of an aqueous solution of carboxylic acid having a chelating action. The aqueous solution contains one of water-soluble carboxylic acid, ammonium carboxylate, and carboxylic acid having an amino group and the the water-soluble carboxylic acid is one of acetic acid, formic acid, citric acid, and oxalic acid. The patterned metal layer is made of one of a transition metal and a compound of a transition metal with one of Si (silicon), N (nitrogen) and O (oxygen).

Abstract: According to the present invention, there is provided an anticorrosive treating concentrate usable for an exposed surface of a metal (e.g. copper or a copper alloy), containing an anticorrosive agent and a precipitation inhibitor and having a pH of 4 to 12 when used in the form of an aqueous solution, in which concentrate the anticorrosive agent is a triazole type compound and/or a derivative thereof and is contained in a concentration of 0.05 to 20 % by weight and the precipitation inhibitor is a compound having at least one nitrogen atom but no metal atom in the molecule.

Abstract: In cleaning a substrate which has a metal material and a semiconductor material both exposed at the surface and which has been subjected to a chemical mechanical polishing treatment, the substrate is first cleaned with a first cleaning solution containing ammonia water, etc. and then with a second cleaning solution containing (a) a first complexing agent capable of easily forming a complex with the oxide of said metal material, etc. and (b) an anionic or cationic surfactant.

Abstract: A ruthenium containing metal 6′ adhering to a periphery of a device forming area, an end face and a rear face in a silicon substrate 10 is removed using a first remover containing (a) at least one compound selected from the group consisting of salts containing chlorate, perchlorate, iodate, periodate, salts containing bromine oxide ion, salts containing manganese oxide ion and salts containing tetravalent cerium ion and (b) at least one acid selected from the group consisting of nitric acid, acetic acid, iodic acid and chloric acid. After the removing treatment, the substrate is washed with hydrofluoric acid to remove the residual remover.

Abstract: This invention provides a remover comprising (a) a cerium (IV) nitrate salt and (b) at least one acid selected from the group consisting of nitric acid, perchloric acid and acetic acid.

Abstract: A semiconductor device washing apparatus washes a surface of a semiconductor wafer after a chemical mechanical polishing process is performed for the surface. A roll brush is placed on the surface of the semiconductor wafer so as to contact with the surface. A first chemical liquid tank contains first chemical liquid. A first exhaust nozzle sprays the first chemical liquid onto the surface of the semiconductor wafer. A second chemical liquid tank contains second chemical liquid. A second exhaust nozzle sprays the second chemical liquid onto the surface of the semiconductor wafer. The first chemical liquid and the second chemical liquid are splayed onto the surface of the semiconductor wafer on the condition that the roll brush and the semiconductor wafer are rotated.

Abstract: A stripper composition containing an anticorrosive agent containing, as essential components, (a) urea or a urea derivative and (b) a hydroxy aromatic compound.

Abstract: An anticorrosive agent containing, as essential components, (a) urea or a urea derivative and (b) a hydroxy aromatic compound.