Abstract: In one aspect there is provided a plasma processing apparatus including a substrate placing unit configured to be placed a substrate to be processed, and an upper electrode opposed to the substrate placing unit, wherein an outer portion of a main surface of the upper electrode opposed to the substrate placing unit has a mirror surface.

Abstract: An aspect of the present embodiment, there is provided a gas supply member includes a body, and a gas supply path penetrating into the body, the gas supply path including a first channel at an inlet side and a second channel connected to the first channel at an outlet side, the first channel having a first diameter and a diameter of the second channel being monotonically increased towards the outlet side from the first diameter to a second diameter, wherein an alumina film is provided on a first sidewall of the first channel, an yttrium-containing film is provided on a second sidewall of the second channel and a surface of the body at the outlet side.

Abstract: According to embodiments, an inner electrode having a plurality of gas holes includes a first contact surface provided to a part of an outer peripheral surface. An outer electrode includes a second contact surface provided to a part of an inner peripheral surface, corresponding to the first contact surface of the inner electrode. The inner electrode and the outer electrode come into contact with each other on the first and second contact surfaces. A brazing filler metal is filled in a brazing filler metal filling hole that reaches from front side main surfaces of the inner electrode and the outer electrode to the contact surfaces to join the inner electrode and the outer electrode.

Abstract: According to one embodiment, a power supply control device of a plasma processing device having a plasma generation unit which generates plasma in a process chamber. The power supply control device includes a radio frequency power supply, a storage unit, and a matching circuit. The radio frequency power supply supplies a power to the plasma generation unit. The storage unit stores matching information including a first matching value, a second process condition, and a third matching value. The first matching value corresponds to process information of a first process condition. The second matching value corresponds to process information of a second process condition. The third matching value corresponds to process information of a transient state where the first process condition is being switched to the second process condition. The matching circuit matches impedances based on the matching information.

Abstract: According to one embodiment, a first substrate has a pair of thermosensitive films, a heater film, and a passage protective film having corrosion resistance in a passage forming region on a first main surface, and has a metal sealing film having corrosion resistance in a region other than the passage forming region. A second substrate has a groove formed in the passage forming region on a second main surface and a side wall forming portion separating other regions other than the passage forming region from the groove and protruding beyond the other regions. A fixing member fixes the first substrate to the second substrate. The side wall forming portion of the second substrate is compression bonded so that the side wall forming portion is located on the metal sealing film on the first substrate.

Abstract: According to one embodiment, a flow rate adjusting unit is disposed on a gas passageway and includes a valve that adjusts the flow rate of a gas and an actuator that controls the displacement amount of the valve. A displacement amount storage unit stores displacement amount information in which a displacement amount of the valve, used when a gas flows into the gas passageway at a flow rate defined according to a process procedure before performing the process procedure, is obtained in advance for each process procedure. A setting circuit acquires the displacement amount corresponding to the process procedure from the displacement amount storage unit, and controls the actuator on the basis of the acquired displacement amount.

Abstract: Provided is a seal member according to embodiments. The seal member is disposed between an upper electrode and a backing plate in an etching apparatus to seal a gap between the upper electrode and the backing plate. In addition, the seal member is configured to include a high heat conductivity member having a heat conductivity higher than that of a first member formed by using siloxane bond and a low resistance member having a resistivity lower than that of the first member.

Abstract: According to one embodiment, a first substrate has a pair of thermosensitive films, a heater film, and a passage protective film having corrosion resistance in a passage forming region on a first main surface, and has a metal sealing film having corrosion resistance in a region other than the passage forming region. A second substrate has a groove formed in the passage forming region on a second main surface and a side wall forming portion separating other regions other than the passage forming region from the groove and protruding beyond the other regions. A fixing member fixes the first substrate to the second substrate. The side wall forming portion of the second substrate is compression bonded so that the side wall forming portion is located on the metal sealing film on the first substrate.

Abstract: According to one embodiment, there is provided a coaxial cable that transmits radio frequency power. The coaxial cable includes an inner tube, an outer tube, and an insulating support member. The inner tube is made of a conductor. The outer tube is disposed outside the inner tube coaxially with the inner tube and is made of a conductor. The insulating support member is disposed between the inner tube and the outer tube. Cooling gas flows into at least one of a first space inside the inner tube and a second space between the inner tube and the outer tube.

Abstract: According to an embodiment, a plasma treatment apparatus includes a processing target holding unit and a plasma generation unit in a chamber. The processing target holding unit includes a supporting table on which a wafer is mounted, a ring-shaped insulator ring arranged at an outer periphery of the supporting table, and a protective film containing yttria for covering a side surface section and an upper surface section of the insulator ring. The protective film is formed thicker on the upper surface section than on the side surface section of the insulator ring.

Abstract: According to one embodiment, there is provided pressure controlling apparatus including a detecting unit, an exhaust pipe, a regulating valve, and a pressure controlling unit. The regulating valve includes a valve port, a changing unit, and a slide valve. The valve port is communicated with the exhaust pipe. The changing unit changes a shape of the valve port to a different shape whose center is located near the central axis of the exhaust pipe. The slide valve regulates an opening degree of the valve port changed by the changing unit. The pressure controlling unit controls changing of a shape of the valve port by the changing unit and regulation of an opening degree of the valve port by the slide valve.

Abstract: According to one embodiment, a plasma processing apparatus that includes a process target holding portion and a plasma generating unit in a chamber, and processes a process target by using generated plasma is provided. An yttrium oxide film is formed on an inner wall of the chamber and a surface of a structural member in the chamber on a generation region side of the plasma. The yttrium oxide film includes yttrium oxide particles, has a film thickness of 10 ?m or more and 200 ?m or less, has a film density of 90% or more, and is such that yttrium oxide particles, which are present in a unit area 20 ?m×20 ?m and whose grain boundary is confirmable, are 0 to 80% in area ratio.

Abstract: According to one embodiment, a protective film formed on a component in a plasma treatment apparatus and having a plasma resistance includes a base film formed on the component and having a concave-convex structure, and an upper film formed on the base film to cover the concave-convex structure.

Abstract: According to one embodiment, a gas supply member is provided with a gas supply passage including a gas flow channel with a first diameter, and an exhaust port connected to one end portion of the gas flow channel and provided to a surface of a downstream side of the gas supply member. An yttria-containing film is formed on a surface constituting the exhaust port and the surface of the downstream side of the gas supply member. At least a part of the surface constituting the exhaust port is formed with a curved surface.

Abstract: According to one embodiment, a power supply control device of a plasma processing device having a plasma generation unit which generates plasma in a process chamber. The power supply control device includes a radio frequency power supply, a storage unit, and a matching circuit. The radio frequency power supply supplies a power to the plasma generation unit. The storage unit stores matching information including a first matching value, a second process condition, and a third matching value. The first matching value corresponds to process information of a first process condition. The second matching value corresponds to process information of a second process condition. The third matching value corresponds to process information of a transient state where the first process condition is being switched to the second process condition. The matching circuit matches impedances based on the matching information.

Abstract: According to one embodiment, there is provided a plasma treatment apparatus including an electrode, a first power supply circuit, a plasma generating unit, a second power supply circuit, a sensing unit, and a control unit. The electrode is arranged inside a treatment chamber. On the electrode, a substrate to be treated is placed. The first power supply circuit supplies power to the electrode. The plasma generating unit generates plasma in a space separated from the electrode inside the treatment chamber. The second power supply circuit supplies power to the plasma generating unit. The sensing unit senses a parameter output from the first power supply circuit. The control unit controls power supplied from the second power supply circuit so that the parameter sensed by the sensing unit becomes close to or substantially equal to a target value.

Abstract: According to one embodiment, a flow rate adjusting unit is disposed on a gas passageway and includes a valve that adjusts the flow rate of a gas and an actuator that controls the displacement amount of the valve. A displacement amount storage unit stores displacement amount information in which a displacement amount of the valve, used when a gas flows into the gas passageway at a flow rate defined according to a process procedure before performing the process procedure, is obtained in advance for each process procedure. A setting circuit acquires the displacement amount corresponding to the process procedure from the displacement amount storage unit, and controls the actuator on the basis of the acquired displacement amount.

Abstract: A mass flow control system according to an embodiment includes a first mass flow controller that receives a corrosive gas having a corrosive effect on a predetermined material and has corrosion resistance to the corrosive gas, and a second mass flow controller that receives a non-corrosive gas having no corrosive effect on the predetermined material and is configured using the predetermined material. The mass flow control system further includes a plurality of first gas pipes that respectively supply a plurality of kinds of corrosive gases to the first mass flow controller, and a plurality of second gas pipes that respectively supply a plurality of kinds of non-corrosive gases to the second mass flow controller and are configured using the predetermined material.

Abstract: An optical biosensor has a total reflection plate so as to totally internally reflect and transmit an incident light, a first grating and a second grating disposed separately on the total reflection plate, and a sensing membrane that is containing an enzyme and a chromogenic reagent and is sandwiched by the first and second gratings on the total reflection plate.

Abstract: A machining electrode includes: a base substance including an electrolytic portion faced to a workpiece on one end face in an axial direction and having conductivity; an insulating unit provided on a face in a direction generally orthogonal to the axial direction of the base substance and having insulation; and a shielding unit provided on a face opposite to the base substance of the insulating unit.