Abstract: A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.

Abstract: A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.

Abstract: A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.

Abstract: In a solid solution system of Al2O3 and CAO or SrO, it has been difficult to obtain a material having a high electrical conductivity (>10?4 S·cm?) at room temperature. A compound is provided in which electrons at a high concentration are introduced into a 12CaO.7Al2O3 compound, a 12SrO.7Al2O3 compound, or a mixed crystal compound containing 12CaO.7Al2O3 and 12SrO.7Al2O3. The compound formed by substituting all the free oxygen ions with electrons is regarded as an electride compound in which [Ca24Al28O64]4+(4e?) or [Sr24Al28O64]4+(4e?) serves as a cation and electrons serve as anions. When a single crystal or a hydrostatic pressure press molded material of a fine powder thereof is held at approximately 700° C. in an alkaline metal vapor or an alkaline earth metal vapor, melt of a hydrostatic pressure press molded material of a powder is held at approximately 1,600° C. in a carbon crucible, followed by slow cooling for solidification, or a thin film of the compound held at approximately 600° C.

Abstract: A magnetic semiconductor material contains at least one type of transition metals (Mn2+, Fe3+, Ru3+, Re2+, and Os3+) having five electrons in the d atomic orbital as a magnetic ion, in which the magnetic semiconductor material exhibits n-type electrical conduction by injection of an electron carrier and p-type electric conduction by injection of a hole carrier. A specific example is a layered oxy-pnictide compound represented by LnMnOPn (wherein Ln is at least one type selected from Y and rare earth elements of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and Pn is at least one selected from pnicogen elements of N, P, As, Bi, and Sb). A high-sensitivity magnetic sensor, current sensor, or memory device can be made by using a magnetic pn homojunction structure made of thin films composed of the magnetic semiconductor material.

Abstract: To provide a method for preparing a mayenite type compound having electroconductivity imparted. A method for preparing an electroconductive mayenite type compound, which comprises melting a raw material containing Al and at least one element selected from the group consisting of Ca and Sr, holding the melt in a low oxygen partial pressure atmosphere having an oxygen partial pressure of not higher than 10 Pa, followed by cooling or annealing in a low oxygen partial pressure atmosphere or in atmospheric air for solidification, thereby to replace oxygen present in cages by electrons in a high concentration.

Abstract: The present invention provides a method for producing negatively charged oxygen atoms comprising: placing a negative electrode (3) on a surface of a member (2) made of calcium-aluminum composite oxide, proximately placing a positive electrode (10) on a side of the member opposite to the surface on which the negative electrode is placed, supplying oxygen to the negative electrode side, and applying voltage between the negative electrode and the positive electrode so as to extract negatively charged oxygen atoms (A) from the side where the positive electrode (10) is placed. The present invention also provides an apparatus for producing negatively charged oxygen atoms which is used for the above method.

Abstract: A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1<m, X?m, 0<Y?0.9, X+Y=2, where A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb. A ZnO based sputtering target is obtained which does not contain ZnS and SiO2, and, upon forming a film via sputtering, is capable of reducing the affect of heating the substrate, of performing high speed deposition, of adjusting the film thickness to be thin, of reducing the generation of particles (dust) and nodules during sputtering, of improving the productivity with small variation in quality, and which has fine crystal grains and a high density of 80% or more, particularly 90% or more.

Abstract: A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.

Abstract: A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.

Abstract: A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.

Abstract: Disclosed is a method of producing a hologram through a two-beam laser interfering exposure process, which comprises emitting a coherent laser light with a pulse width (?) ranging from greater than 900 femtoseconds to 100 picoseconds and a laser power of 10 ?J/pulse or more using a solid-state laser as a light source, dividing the pulses light from the laser into two beams, controlling the two beams temporally and spatially in such a manner that the two beam are converged on a surface of or inside a workpiece for recording a hologram while matching the respective converged spots of the two beams with one another temporally and spatially to create the interference therebetween so as to record a surface-relief hologram on the surface of the workpiece or an embedded hologram inside the workpiece in an irreversible manner.

Abstract: A thermoelectric conversion material having a novel composition is provided. The thermoelectric conversion material comprises a first dielectric material layer, a second dielectric material layer, and an electron localization layer that is present between the first dielectric material layer and the second dielectric material layer and that has a thickness of 1 nm.

Abstract: Provided is a method for preparing an electroconductive mayenite type compound with good properties readily and stably at low cost without need for expensive facilities, a reaction at high temperature and for a long period of time, or complicated control of reaction. A method for preparing an electroconductive mayenite type compound comprises a step of subjecting a precursor to heat treatment, wherein the precursor contains Ca and/or Sr, and Al, a molar ratio of (a total of CaO and SrO:Al2O3) is from (12.6:6.4) to (11.7:7.3) as calculated as oxides, a total content of CaO, SrO and Al2O3 in the precursor is at least 50 mol %, and the precursor is a vitreous or crystalline material; and the method comprises a step of mixing the precursor with a reducing agent and performing the heat treatment of holding the mixture at 600-1,415° C. in an inert gas or vacuum atmosphere with an oxygen partial pressure of at most 10 Pa.

Abstract: Provided is a method for preparing an electroconductive mayenite type compound with good properties readily and stably at low cost. A production method of an electroconductive mayenite type compound comprising a step of subjecting a precursor to heat treatment, is a method for preparing an electroconductive mayenite type compound, comprising a step of subjecting a precursor to heat treatment; wherein the precursor is a vitreous or crystalline material, which contains Ca and Al, in which a molar ratio of (CaO:Al2O3) is from (12.6:6.4) to (11.7:7.3) as calculated as oxides, and in which a total amount of CaO and Al2O3 is at least 50 mol %, and wherein the heat treatment is heat treatment comprising holding the precursor at a heat treatment temperature T of from 600 to 1415° C. and in an inert gas or vacuum atmosphere with an oxygen partial pressure PO2 in a range of PO2?105×exp[{?7.9×l04/(T+273)}+14.4] in the unit of Pa.

Abstract: A manufacturing method of a sputtering target having mainly oxychalcogenide containing La and Cu by sintering at least one or more powders selected from an elementary substance of a constituent element, oxide or chalcogenide as the raw material, characterized in including a reaction step of retaining the [material] at a temperature of 850° C. or less for 1 hour or more during the sintering step, wherein this [material], after the reaction step, is subject to pressure sintering at a temperature that is higher than the reaction step temperature. In addition to increasing the density of a P-type transparent conductive material target having mainly oxychalcogenide containing La and Cu and enabling the enlargement of the target at a low manufacturing cost, the existence of unreacted matter in the target can be eliminated, the production yield can be improved by suppressing the generation of cracks in the target, and the quality of deposition formed by sputtering this kind of target can also be improved.

Abstract: Disclosed is a method of producing an LnCuOX single-crystal thin film (wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se and Te), which comprises the steps of growing a base thin film on a single-crystal substrate, depositing an amorphous or polycrystalline LnCuOX thin film on the base thin film to form a laminated film, and then annealing the laminated film at a high temperature of 500° C. or more.

Abstract: The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.

Abstract: There is provided a C12A7 compound capable of selectively and reversibly clathrating X? ions, such as active oxygen radicals, with improved controllability. The C12A7 compound clathrating OH? ions and On? at a concentration of 2×1019 cm?3 or less can be prepared by subjecting a mixed material containing Ca and Al to a solid phase reaction at a firing temperature not lower than 1200° C. and lower than 1449° C. in a dry oxygen atmosphere having an oxygen partial pressure of 0.1 atm or more and a water vapor partial pressure of 10?3 atm or less, keeping the resultant product at a temperature of 1200° C. or higher, and cooling rapidly. The C12A7 compound is heat-treated to clathrate OH? ions at a concentration of 2×1019 cm?3 or less, and On? at a high concentration of more than 2×1019 cm?3. The compound can reversibly clathrate or release On? ion radicals through the elevation or lowering of the temperature thereof in a temperature range of 300 to 850° C.

Abstract: To provide a method for preparing a mayenite type compound having electroconductivity imparted. A method for preparing an electroconductive mayenite type compound, which comprises melting a raw material containing Al and at least one element selected from the group consisting of Ca and Sr, holding the melt in a low oxygen partial pressure atmosphere having an oxygen partial pressure of not higher than 10 Pa, followed by cooling or annealing in a low oxygen partial pressure atmosphere or in atmospheric air for solidification, thereby to replace oxygen present in cages by electrons in a high concentration.