Patents by Inventor Hideo Hosono

Hideo Hosono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8168974
    Abstract: A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1×10?18/cm3, and the gate-insulating layer is comprised of a first layer being in contact with the amorphous oxide and a second layer different from the first layer.
    Type: Grant
    Filed: September 15, 2010
    Date of Patent: May 1, 2012
    Assignees: Canon Kabushiki Kaisha, Tokyo Institute of Technology
    Inventors: Masafumi Sano, Katsumi Nakagawa, Hideo Hosono, Toshio Kamiya, Kenji Nomura
  • Publication number: 20120012838
    Abstract: A switching element of LCDs or organic EL displays which uses a thin film transistor device, includes: a drain electrode, a source electrode, a channel layer contacting the drain electrode and the source electrode, wherein the channel layer comprises indium-gallium-zinc oxide having a transparent, amorphous state of a composition equivalent to InGaO3(ZnO)m (wherein m is a natural number less than 6) in a crystallized state, and the channel layer has a semi-insulating property represented by an electron mobility of more than 1 cm2/(V·sec) and an electron carrier concentration is less than 1018/cm3, a gate electrode, and a gate insulating film positioned between the gate electrode and the channel layer.
    Type: Application
    Filed: September 23, 2011
    Publication date: January 19, 2012
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Hideo Hosono, Masahiro Hirano, Hiromichi Ota, Toshio Kamiya, Kenji Nomura
  • Patent number: 8084743
    Abstract: A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.
    Type: Grant
    Filed: June 30, 2008
    Date of Patent: December 27, 2011
    Assignees: Canon Kabushiki Kaisha, Tokyo Institute of Technology
    Inventors: Keishi Saito, Hideo Hosono, Toshio Kamiya, Kenji Nomura
  • Publication number: 20110201162
    Abstract: The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.
    Type: Application
    Filed: April 29, 2011
    Publication date: August 18, 2011
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Hideo Hosono, Masahiro Hirano, Hiromichi Ota, Toshio Kamiya, Kenji Nomura
  • Publication number: 20110111965
    Abstract: Provides a new non-oxide system compound material superconductor as an alternative of the perovskite type copper oxides superconductor. Layered compounds which are represented by chemical formula AF(TM)Pn (wherein, A is at least one selected from a group consisting of the second family elements in the long form periodic table, F is a fluorine ion, TM is at least one selected from a group of transition metal elements consisting of Fe, Ru, Os, Ni, Pd, and Pt, and Pn is at least one selected from a group consisting of the fifteenth family elements in the long form periodic table), having a crystal structure of ZrCuSiAs type (space group P4/nmm) and which become superconductors by doping trivalent cations or divalent anions.
    Type: Application
    Filed: July 9, 2009
    Publication date: May 12, 2011
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Hideo Hosono, Hiroshi Yanagi, Toshio Kamiya, Satoru Matsuishi, Sungwng Kim, Seok Gyu Yoon, Hidenori Hiramatsu, Masahiro Hirano, Takatoshi Nomura, Yoichi Kamihara
  • Publication number: 20110101352
    Abstract: The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.
    Type: Application
    Filed: January 5, 2011
    Publication date: May 5, 2011
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Hideo Hosono, Masahiro Hirano, Hiromichi Ota, Toshio Kamiya, Kenji Nomura
  • Patent number: 7897068
    Abstract: A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1<m, X?m, 0<Y?0.9, X+Y=2, where A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb. A ZnO based sputtering target is obtained which does not contain ZnS and SiO2, and, upon forming a film via sputtering, is capable of reducing the affect of heating the substrate, of performing high speed deposition, of adjusting the film thickness to be thin, of reducing the generation of particles (dust) and nodules during sputtering, of improving the productivity with small variation in quality, and which has fine crystal grains and a high density of 80% or more, particularly 90% or more.
    Type: Grant
    Filed: June 4, 2010
    Date of Patent: March 1, 2011
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Hideo Hosono, Kazushige Ueda, Masataka Yahagi, Hideo Takami
  • Publication number: 20110045985
    Abstract: A superconductor which comprises a new compound composition substituting for perovskite copper oxides. The superconductor is characterized by comprising a compound which is represented by the chemical formula A(TM)2Pn2 [wherein A is at least one member selected from the elements in Group 1, the elements in Group 2, or the elements in Group 3 (Sc, Y, and the rare-earth metal elements); TM is at least one member selected from the transition metal elements Fe, Ru, Os, Ni, Pd, or Pt; and Pn is at least one member selected from the elements in Group 15 (pnicogen elements)] and which has an infinite-layer crystal structure comprising (TM)Pn layers alternating with metal layers of the element (A).
    Type: Application
    Filed: February 20, 2009
    Publication date: February 24, 2011
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Hideo Hosono, Hiroshi Yanagi, Toshio Kamiya, Satoru Matsuishi, Sungwng Kim, Seok Gyu Yoon, Hidenori Hiramatsu, Masahiro Hirano, Yoichi Kamihara, Takatoshi Nomura
  • Patent number: 7892457
    Abstract: A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1<m, X?m, 0<Y?0.9, X+Y=2, where A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb. A ZnO based sputtering target is obtained which does not contain ZnS and SiO2, and, upon forming a film via sputtering, is capable of reducing the affect of heating the substrate, of performing high speed deposition, of adjusting the film thickness to be thin, of reducing the generation of particles (dust) and nodules during sputtering, of improving the productivity with small variation in quality, and which has fine crystal grains and a high density of 80% or more, particularly 90% or more.
    Type: Grant
    Filed: March 11, 2010
    Date of Patent: February 22, 2011
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Hideo Hosono, Kazushige Ueda, Masataka Yahagi, Hideo Takami
  • Patent number: 7892458
    Abstract: In an electride C12A7 provided by replacing free oxygen in 12CaO.7Al2O3 with electrons, a material having metallic electroconductivity and an electric conductivity of more than 5×102 S/cm at room temperature could not have been produced without difficulties. An electride 12CaO.7Al2O3, which has metallic electroconductivity and has an electric conductivity of more than 5×102 S/cm at room temperature, can be produced by heat-treating titanium metal vapor and 12CaO.7Al2O3 single crystal, sinter, or thin film at a temperature above 600° C. and below 1,450° C. for less than 240 hours. Further, thermoelectric field electron release can also be realized using an electron release chip fabricated from the electride.
    Type: Grant
    Filed: November 17, 2006
    Date of Patent: February 22, 2011
    Assignee: Japan Science and Technology Agency
    Inventors: Hideo Hosono, Sungwng Kim, Katsurou Hayashi, Masashi Miyakawa, Satoru Matsuishi, Toshio Kamiya, Masahiro Hirano, Yoshitake Toda
  • Publication number: 20110024741
    Abstract: Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018/cm3 is used for the N-type region.
    Type: Application
    Filed: September 15, 2010
    Publication date: February 3, 2011
    Applicants: CANON KABUSHIKI KAISHA, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Katsumi Abe, Hideo Hosono, Toshio Kamiya, Kenji Nomura
  • Publication number: 20110017996
    Abstract: An Object of the Present Invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an amorphous.
    Type: Application
    Filed: September 15, 2010
    Publication date: January 27, 2011
    Applicants: CANON KABUSHIKI KAISHA, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Tohru Den, Tatsuya Iwasaki, Hideo Hosono, Toshio Kamiya, Kenji Nomura
  • Publication number: 20110012107
    Abstract: A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1×10?18/cm3, and the gate-insulating layer is comprised of a first layer being in contact with the amorphous oxide and a second layer different from the first layer.
    Type: Application
    Filed: September 15, 2010
    Publication date: January 20, 2011
    Applicants: CANON KABUSHIKI KAISHA, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Masafumi Sano, Katsumi Nakagawa, Hideo Hosono, Toshio Kamiya, Kenji Nomura
  • Patent number: 7872259
    Abstract: An object of the present invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an amorphous.
    Type: Grant
    Filed: November 9, 2005
    Date of Patent: January 18, 2011
    Assignees: Canon Kabushiki Kaisha, Tokyo Institute of Technology
    Inventors: Tohru Den, Tatsuya Iwasaki, Hideo Hosono, Toshio Kamiya, Kenji Nomura
  • Patent number: 7868326
    Abstract: A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1×10?18/cm3, and the gate-insulating layer is comprised of a first layer being in contact with the amorphous oxide and a second layer different from the first layer.
    Type: Grant
    Filed: November 9, 2005
    Date of Patent: January 11, 2011
    Assignees: Canon Kabushiki Kaisha, Tokyo Institute of Technology
    Inventors: Masafumi Sano, Katsumi Nakagawa, Hideo Hosono, Toshio Kamiya, Kenji Nomura
  • Publication number: 20110002832
    Abstract: Disclosed is a superconducting compound which has a structure obtained by partially substituting oxygen ions of a compound, which is represented by the following chemical formula; LnTMOPh [wherein Ln represents at least one element selected from Y and rare earth metal elements (La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu), TM represents at least one element selected from transition metal elements (Fe, Ru, Os, Ni, Pd and Pt), and Pn represents at least one element selected from pnictide elements (N, P, As and Sb)] and has a ZrCuSiAs-type crystal structure (space group P4/nmm), with at least one kind of monovalent anion (F?, Cl? or Br?). The superconducting compound alternatively has a structure obtained by partially substituting Ln ions of the compound with at least one kind of tetravalent metal ion (Ti4+, Zr4+, Hf4+, C4+, Si4+, Ge4+, Sn4+ or Pb4+) or a structure obtained by partially substituting Ln ions of the compound with at least one kind of divalent metal ion (Mg2+, Ca2+, Sr2+ or Ba2+).
    Type: Application
    Filed: February 17, 2009
    Publication date: January 6, 2011
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Hideo Hosono, Yoichi Kamihara, Masahiro Hirano, Toshio Kamiya, Hiroshi Yanagi
  • Patent number: 7863611
    Abstract: Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018/cm3 is used for the N-type region.
    Type: Grant
    Filed: November 9, 2005
    Date of Patent: January 4, 2011
    Assignees: Canon Kabushiki Kaisha, Tokyo Institute of Technology
    Inventors: Katsumi Abe, Hideo Hosono, Toshio Kamiya, Kenji Nomura
  • Publication number: 20100295041
    Abstract: An active matrix display comprising a light control device and a field effect transistor for driving the light control device. The active layer of the field effect transistor comprises an amorphous.
    Type: Application
    Filed: August 2, 2010
    Publication date: November 25, 2010
    Applicants: CANON KABUSHIKI KAISHA, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideya Kumomi, Hideo Hosono, Toshio Kamiya, Kenji Nomura
  • Patent number: 7829444
    Abstract: Provided is a novel method for manufacturing a field effect transistor. Prior to forming an amorphous oxide layer on a substrate, ultraviolet rays are irradiated onto the substrate surface in an ozone atmosphere, plasma is irradiated onto the substrate surface, or the substrate surface is cleaned by a chemical solution containing hydrogen peroxide.
    Type: Grant
    Filed: November 9, 2005
    Date of Patent: November 9, 2010
    Assignees: Canon Kabushiki Kaisha, Tokyo Institute of Technology
    Inventors: Hisato Yabuta, Masafumi Sano, Tatsuya Iwasaki, Hideo Hosono, Toshio Kamiya, Kenji Nomura
  • Publication number: 20100267198
    Abstract: Provided is a novel method for manufacturing a field effect transistor. Prior to forming an amorphous oxide layer on a substrate, ultraviolet rays are irradiated onto the substrate surface in an ozone atmosphere, plasma is irradiated onto the substrate surface, or the substrate surface is cleaned by a chemical solution containing hydrogen peroxide.
    Type: Application
    Filed: June 28, 2010
    Publication date: October 21, 2010
    Applicants: CANON KABUSHIKI KAISHA, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: HISATO YABUTA, MASAFUMI SANO, TATSUYA IWASAKI, HIDEO HOSONO, Toshio Kamiya, KENJI NOMURA