Patents by Inventor Hideo Kitagawa

Hideo Kitagawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210016395
    Abstract: A puncture forming method is a method of forming punctures in a sample by irradiating a surface of the sample with a light beam. The puncture forming method includes: forming a first puncture by irradiating a first position on the surface of the sample with a first pulse of the light beam; and after the forming of the first puncture, forming a second puncture which at least partially overlaps the first puncture by irradiating, with a second pulse of the light beam, a second position on the surface of the sample positioned away from the first position in a first direction. The second puncture has a tip which is positioned inside the sample and which is bent in a direction opposite to the first direction.
    Type: Application
    Filed: October 2, 2020
    Publication date: January 21, 2021
    Inventors: Daisuke IKEDA, Hideo KITAGAWA, Hiroshi ASAKA, Masayuki ONO
  • Publication number: 20200373730
    Abstract: Provided is a nitride semiconductor laser element which includes: a stacked structure including a plurality of semiconductor layers including a light emitting layer, the stacked structure including a pair of resonator end faces located on opposite ends; and a protective film including a dielectric body and disposed on at least one of the pair of resonator end faces. The protective film includes a first protective film (a first emission surface protective film), a second protective film (a second emission surface protective film), and a third protective film (a third emission surface protective film) disposed in stated order above the stacked structure. The first protective film is amorphous, the second protective film is crystalline, and the third protective film is amorphous.
    Type: Application
    Filed: August 13, 2020
    Publication date: November 26, 2020
    Inventors: Hideo KITAGAWA, Shinji YOSHIDA, Isao KIDOGUCHI
  • Publication number: 20200021083
    Abstract: In a method for manufacturing a nitride semiconductor light-emitting element by splitting a semiconductor layer stacked substrate including a semiconductor layer stacked body with a plurality of waveguides extending along the Y-axis to fabricate a bar-shaped substrate, and splitting the bar-shaped substrate along a lengthwise split line to fabricate an individual element, the waveguide in the individual element has different widths at one end portion and the other end portion and the center line of the waveguide is located off the center of the individual element along the X-axis, and in the semiconductor layer stacked substrate including a first element forming region and a second element forming region which are adjacent to each other along the X-axis, two lengthwise split lines sandwiching the first element forming region and two lengthwise split lines sandwiching the second element forming region are misaligned along the X-axis.
    Type: Application
    Filed: September 26, 2019
    Publication date: January 16, 2020
    Inventors: Daisuke IKEDA, Gen SHIMIZU, Hideo KITAGAWA, Toru TAKAYAMA, Masayuki ONO, Katsuya SAMONJI, Osamu TOMITA, Satoko KAWASAKI
  • Patent number: 9540459
    Abstract: To provide a method of efficiently affording olefin polymers having a high molecular weight and a high melting point even under industrially advantageous high-temperature conditions. A production method of an olefin polymer to solve the above problem includes polymerizing monomer(s) including at least one ?-olefin having 3 or more carbon atoms at 50° C. to 200° C. in the presence of an olefin polymerization catalyst including; (A) a crosslinked metallocene compound represented by General Formula [I] below; and (B) at least one compound selected from (b-1) an organoaluminum oxy-compound, (b-2) a compound that forms an ion pair by reacting with the crosslinked metallocene compound (A), and (b-3) an organoalunimum compound.
    Type: Grant
    Filed: March 11, 2014
    Date of Patent: January 10, 2017
    Assignee: MITSUI CHEMICALS, INC.
    Inventors: Ikuko Ebisawa, Hideo Kitagawa, Takashi Yukita, Masahiro Yamashita, Kouji Takeda, Hiromu Kaneyoshi
  • Publication number: 20160039952
    Abstract: To provide a method of efficiently affording olefin polymers having a high molecular weight and a high melting point even under industrially advantageous high-temperature conditions. A production method of an olefin polymer to solve the above problem includes polymerizing monomer(s) including at least one ?-olefin having 3 or more carbon atoms at 50° C. to 200° C. in the presence of an olefin polymerization catalyst including; (A) a crosslinked metallocene compound represented by General Formula [I] below; and (B) at least one compound selected from (b-1) an organoaluminum oxy-compound, (b-2) a compound that forms an ion pair by reacting with the crosslinked metallocene compound (A), and (b-3) an organoalunimum compound.
    Type: Application
    Filed: March 11, 2014
    Publication date: February 11, 2016
    Applicant: MITSUI CHEMICALS, INC.
    Inventors: Ikuko EBISAWA, Hideo KITAGAWA, Takashi YUKITA, Masahiro YAMASHITA, Kouji TAKEDA, Hiromu KANEYOSHI
  • Patent number: 8604253
    Abstract: The present invention is a method for producing a polyhydric phenol, including the following steps (a) to (d): (a) a first step of producing (4S,5R,6S)-4,5,6-trihydroxy-2-cyclohexcene-1-one from 2-deoxy-scyllo-inosose by a dehydration reaction; (b) a second step of producing 1,2,4-trihydroxybenzene from the (4S,5R,6S)-4,5,6-trihydroxy-2-cyclohexene-1-one obtained in the first step by a dehydration reaction; (c) a third step of producing 4-hydroxycyclohexane-1,3-dione from the 1,2,4-trihydroxybenzene by a catalytic hydrogenation reaction with the use of a metal catalyst; and (d) a fourth step of producing hydroquinone by heating the 4-hydroxycyclohexane-1,3-dione.
    Type: Grant
    Filed: April 27, 2010
    Date of Patent: December 10, 2013
    Assignee: Mitsui Chemicals, Inc.
    Inventors: Hideo Kitagawa, Junya Kiyosu, Susumu Saito, Takaomi Hayashi, Naritoshi Yoshimura, Aya Nakagawa
  • Patent number: 8378146
    Abstract: Provided is a method for producing catechol in a one-pot by reacting (4S,5R,6S)-4,5,6-trihydroxy-2-cyclohexene-1-one under hydrogen-reducing conditions while heating.
    Type: Grant
    Filed: April 7, 2009
    Date of Patent: February 19, 2013
    Assignee: Mitsui Chemicals, Inc.
    Inventors: Tsuneji Suzuki, Takaomi Hayashi, Hideo Kitagawa, Naritoshi Yoshimura
  • Publication number: 20120046498
    Abstract: The present invention is a method for producing a polyhydric phenol, including the following steps (a) to (d): (a) a first step of producing (4S,5R,6S)-4,5,6-trihydroxy-2-cyclohexcene-1-one from 2-deoxy-scyllo-inosose by a dehydration reaction; (b) a second step of producing 1,2,4-trihydroxybenzene from the (4S,5R,6S)-4,5,6-trihydroxy-2-cyclohexene-1-one obtained in the first step by a dehydration reaction; (c) a third step of producing 4-hydroxycyclohexane-1,3-dione from the 1,2,4-trihydroxybenzene by a catalytic hydrogenation reaction with the use of a metal catalyst; and (d) a fourth step of producing hydroquinone by heating the 4-hydroxycyclohexane-1,3-dione.
    Type: Application
    Filed: April 27, 2010
    Publication date: February 23, 2012
    Applicant: MITSUI CHEMICALS, INC.
    Inventors: Hideo Kitagawa, Junya Kiyosu, Susumu Saito, Takaomi Hayashi, Naritoshi Yoshimura, Aya Nakagawa
  • Patent number: 8012822
    Abstract: A process for forming dielectric films containing at least metal atoms, silicon atoms, and oxygen atoms on a silicon substrate comprises a first step of oxidizing a surface portion of the silicon substrate to form a silicon dioxide film; a second step of forming a metal film on the silicon dioxide film in a non-oxidizing atmosphere; a third step of heating in a non-oxidizing atmosphere to diffuse the metal atoms constituting the metal film into the silicon dioxide film; and a fourth step of oxidizing the silicon dioxide film containing the diffused metal atoms to form the film containing the metal atoms, silicon atoms, and oxygen atoms.
    Type: Grant
    Filed: December 23, 2008
    Date of Patent: September 6, 2011
    Assignees: Canon Kabushiki Kaisha, Canon Anelva Corporation
    Inventors: Naomu Kitano, Yusuke Fukuchi, Nobumasa Suzuki, Hideo Kitagawa
  • Patent number: 7923360
    Abstract: A method of forming dielectric films including a metal silicate on a silicon substrate comprises a first step of oxidizing a surface layer portion of the silicon substrate and forming a silicon dioxide film; a second step of irradiating ion on the surface of the silicon dioxide film and making the surface layer portion of the silicon dioxide film into a reaction-accelerating layer with Si—O cohesion cut; a third step of laminating a metal film on the reaction-accelerating layer in a non-oxidizing atmosphere; and a fourth step of oxidizing the metal film and forming a metal silicate film that diffuses a metal from the metal film to the silicon dioxide film.
    Type: Grant
    Filed: December 23, 2008
    Date of Patent: April 12, 2011
    Assignees: Canon Kabushiki Kaisha, Canon Anelva Corporation
    Inventors: Hideo Kitagawa, Naomu Kitano
  • Publication number: 20110034735
    Abstract: Provided is a method for producing catechol in a one-pot by reacting (4S,5R,6S)-4,5,6-trihydroxy-2-cyclohexene-1-one under hydrogen-reducing conditions while heating.
    Type: Application
    Filed: April 7, 2009
    Publication date: February 10, 2011
    Applicant: Mitsui Chemicals, Inc.
    Inventors: Tsuneji Suzuki, Takaomi Hayashi, Hideo Kitagawa, Naritoshi Yoshimura
  • Publication number: 20090275209
    Abstract: Disclosed is a plasma processing apparatus and a plasma processing method, by which ions of plasma can be injected uniformly over the whole surface of a substrate to be processed, in a short time. Specifically, when the substrate is processed in a reaction container, the gas pressure inside the reaction container is increased. Alternatively, the distance between a plasma processing portion and the substrate is enlarged, or the substrate is temporally moved outwardly of the reaction container. As a further alternative, a shutter is disposed between the plasma producing zone and the substrate. With this procedure, incidence of ions of the plasma upon the substrate can be substantially intercepted for a predetermined time period from the start of plasma production.
    Type: Application
    Filed: June 16, 2008
    Publication date: November 5, 2009
    Inventors: Shinzo Uchiyama, Nobumasa Suzuki, Hideo Kitagawa, Yusuke Fukuchi
  • Publication number: 20090170340
    Abstract: A method of forming dielectric films including a metal silicate on a silicon substrate comprises a first step of oxidizing a surface layer portion of the silicon substrate and forming a silicon dioxide film; a second step of irradiating ion on the surface of the silicon dioxide film and making the surface layer portion of the silicon dioxide film into a reaction-accelerating layer with Si—O cohesion cut; a third step of laminating a metal film on the reaction-accelerating layer in a non-oxidizing atmosphere; and a fourth step of oxidizing the metal film and forming a metal silicate film that diffuses a metal from the metal film to the silicon dioxide film.
    Type: Application
    Filed: December 23, 2008
    Publication date: July 2, 2009
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Hideo Kitagawa, Naomu Kitano
  • Publication number: 20090170341
    Abstract: A process for forming dielectric films containing at least metal atoms, silicon atoms, and oxygen atoms on a silicon substrate comprises a first step of oxidizing a surface portion of the silicon substrate to form a silicon dioxide film; a second step of forming a metal film on the silicon dioxide film in a non-oxidizing atmosphere; a third step of heating in a non-oxidizing atmosphere to diffuse the metal atoms constituting the metal film into the silicon dioxide film; and a fourth step of oxidizing the silicon dioxide film containing the diffused metal atoms to form the film containing the metal atoms, silicon atoms, and oxygen atoms.
    Type: Application
    Filed: December 23, 2008
    Publication date: July 2, 2009
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Naomu Kitano, Yusuke Fukuchi, Nobumasa Suzuki, Hideo Kitagawa
  • Publication number: 20080283507
    Abstract: A plasma treatment apparatus and a method of plasma treatment for reducing generation of Na atoms in the case where a silica glass and the like are used for a member made of dielectric material are provided. The provided plasma treatment apparatus includes a dielectric member having an impurity element forming positive and movable ions, a vacuum chamber partially sealed with the dielectric member, and a radiator radiating electromagnetic wave into the vacuum chamber through the dielectric member to generate plasma in the vacuum chamber and to treat a workpiece using the plasma. The apparatus further includes an electrode on the dielectric member on a surface opposite the surface exposed to the plasma. The generation of Na can be reduced by applying to the plasma a negative DC potential which is lower than a floating potential measured at the surface of the dielectric member exposed to the plasma.
    Type: Application
    Filed: May 8, 2008
    Publication date: November 20, 2008
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Hideo Kitagawa, Yusuke Fukuchi
  • Publication number: 20080053816
    Abstract: A plasma processing apparatus includes a plasma processing chamber and a source of microwaves. The microwaves are introduced to the processing chamber by a slotted annular waveguide having inner and outer arc-shaped slots. The distance between the centerline of the inner and outer arc-shaped slots is set to be an even multiple of a half wavelength of a microwave surface wave propagating along a surface of a dielectric window of the chamber. A distance between the centerline of the outer arc-shaped slot and an outer periphery of the dielectric window is set to be an odd multiple of the half wavelength of the microwave surface wave.
    Type: Application
    Filed: August 22, 2007
    Publication date: March 6, 2008
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Nobumasa Suzuki, Hideo Kitagawa
  • Publication number: 20070281107
    Abstract: A method for irradiating plasma of a material to a substrate and introducing the material into the substrate includes an irradiation step of irradiating the plasma to the substrate during an irradiation time period in which the material is not diffused in the substrate, and a non-irradiation step of stopping irradiation of the plasma to the substrate during a non-irradiation time period in which the plasma disappears, wherein the irradiation step and the non-irradiation step are repeated.
    Type: Application
    Filed: May 30, 2007
    Publication date: December 6, 2007
    Inventor: Hideo Kitagawa
  • Patent number: 7238812
    Abstract: Tricyclic triazolobenzazepine derivatives in the form or a prodrug are provided. The compounds according to the present invention are those represented by formula (I) and pharmacologically acceptable salts and solvates thereon. The compounds are useful as antiallergic agents and exhibit excellent bioavailability.
    Type: Grant
    Filed: November 9, 2005
    Date of Patent: July 3, 2007
    Assignee: Meji Seika Kaisha, Ltd.
    Inventors: Yasuo Ohtsuka, Toshio Nishizuka, Sohjiro Shiokawa, Seiji Tsutsumi, Mami Kawaguchi, Hideo Kitagawa, Hiromi Takata, Takashi Shishikura, Toyoaki Ishikura, Kenichi Fushihara, Yumiko Okada, Sachiko Miyamoto, Maki Shiobara
  • Publication number: 20060074074
    Abstract: Tricyclic triazolobenzazepine derivatives in the form or a prodrug are provided. The compounds according to the present invention are those represented by formula (I) and pharmacologically acceptable salts and solvates thereon. The compounds are useful as antiallergic agents and exhibit excellent bioavailability.
    Type: Application
    Filed: November 9, 2005
    Publication date: April 6, 2006
    Inventors: Yasuo Ohtsuka, Toshio Nishizuka, Sohjiro Shiokawa, Seiji Tsutsumi, Mami Kawaguchi, Hideo Kitagawa, Hiromi Takata, Takashi Shishikura, Toyoaki Ishikura, Kenichi Fushihara, Yumiko Okada, Sachiko Miyamoto, Maki Shiobara
  • Patent number: 7022860
    Abstract: A process for preparing a compound represented by formula (IIa?) wherein Q represents group (i) as defined in the specification and R2 to R5, R31, R32, and R52 are as defined in the specification, by (1) reacting a compound represented by formula (V) wherein R2 to R5 and R52 are as defined in the specification. with a compound represented by R31R32C?O wherein R31 and R32 are as defined in the specification; (2) reacting the compound prepared in (1) with a compound represented by R71—C(?O)—R72 wherein R71 and R72 each independently represent a chlorine atom, 4-nitrophenyl, or 1-imidazolyl; and (3) reacting the compound prepared in (2) with a compound represented by R33OH wherein R33 is as defined in the specification.
    Type: Grant
    Filed: February 13, 2002
    Date of Patent: April 4, 2006
    Assignee: Meiji Seika Kaisha, Ltd.
    Inventors: Yasuo Ohtsuka, Toshio Nishizuka, Sohjiro Shiokawa, Seiji Tsutsumi, Mami Kawaguchi, Hideo Kitagawa, Hiromi Takata, Takashi Shishikura, Toyoaki Ishikura, Kenichi Fushihara, Yumiko Okada, Sachiko Miyamoto, Maki Shiobara