Abstract: A puncture forming method is a method of forming punctures in a sample by irradiating a surface of the sample with a light beam. The puncture forming method includes: forming a first puncture by irradiating a first position on the surface of the sample with a first pulse of the light beam; and after the forming of the first puncture, forming a second puncture which at least partially overlaps the first puncture by irradiating, with a second pulse of the light beam, a second position on the surface of the sample positioned away from the first position in a first direction. The second puncture has a tip which is positioned inside the sample and which is bent in a direction opposite to the first direction.

Abstract: A nitride semiconductor light-emitting element includes: a nitride semiconductor that has two resonator faces opposed to each other; and a dielectric multilayer film that is layered on at least one resonator face of the two resonator faces. For example, the dielectric multilayer film layered on a resonator face includes a first dielectric film layered on the resonator face and a second dielectric film layered on the first dielectric film. The first dielectric film includes aluminum oxynitride. The second dielectric film includes aluminum oxide. The first dielectric film is a crystalline film. At least one of chemical elements of yttrium or lanthanum is added to the first dielectric film. At least one of chemical elements of yttrium or lanthanum is added to the second dielectric film.

Abstract: Provided is a nitride semiconductor laser element which includes: a stacked structure including a plurality of semiconductor layers including a light emitting layer, the stacked structure including a pair of resonator end faces located on opposite ends; and a protective film including a dielectric body and disposed on at least one of the pair of resonator end faces. The protective film includes a first protective film (a first emission surface protective film), a second protective film (a second emission surface protective film), and a third protective film (a third emission surface protective film) disposed in stated order above the stacked structure. The first protective film is amorphous, the second protective film is crystalline, and the third protective film is amorphous.

Abstract: A nitride semiconductor laser element includes a stacked structure and a dielectric multilayer film, The dielectric multilayer film includes a first dielectric film, a second dielectric film, and a third dielectric film in the stated order. The nitride semiconductor laser element satisfies the following expressions: ? nk × dk + ni × di + nj × dj = m ? 1 × ? 4 ± ? 16 ; nj × dj = m ? 2 × ? / 4 ± ? / 16 ; and 3 ? ? 16 ? ? nk × dk ? 5 ? ? 16 .

Abstract: In a method for manufacturing a nitride semiconductor light-emitting element by splitting a semiconductor layer stacked substrate including a semiconductor layer stacked body with a plurality of waveguides extending along the Y-axis to fabricate a bar-shaped substrate, and splitting the bar-shaped substrate along a lengthwise split line to fabricate an individual element, the waveguide in the individual element has different widths at one end portion and the other end portion and the center line of the waveguide is located off the center of the individual element along the X-axis, and in the semiconductor layer stacked substrate including a first element forming region and a second element forming region which are adjacent to each other along the X-axis, two lengthwise split lines sandwiching the first element forming region and two lengthwise split lines sandwiching the second element forming region are misaligned along the X-axis.

Abstract: A puncture forming method is a method of forming punctures in a sample by irradiating a surface of the sample with a light beam. The puncture forming method includes: forming a first puncture by irradiating a first position on the surface of the sample with a first pulse of the light beam; and after the forming of the first puncture, forming a second puncture which at least partially overlaps the first puncture by irradiating, with a second pulse of the light beam, a second position on the surface of the sample positioned away from the first position in a first direction. The second puncture has a tip which is positioned inside the sample and which is bent in a direction opposite to the first direction.

Abstract: Provided is a nitride semiconductor laser element which includes: a stacked structure including a plurality of semiconductor layers including a light emitting layer, the stacked structure including a pair of resonator end faces located on opposite ends; and a protective film including a dielectric body and disposed on at least one of the pair of resonator end faces. The protective film includes a first protective film (a first emission surface protective film), a second protective film (a second emission surface protective film), and a third protective film (a third emission surface protective film) disposed in stated order above the stacked structure. The first protective film is amorphous, the second protective film is crystalline, and the third protective film is amorphous.

Abstract: In a method for manufacturing a nitride semiconductor light-emitting element by splitting a semiconductor layer stacked substrate including a semiconductor layer stacked body with a plurality of waveguides extending along the Y-axis to fabricate a bar-shaped substrate, and splitting the bar-shaped substrate along a lengthwise split line to fabricate an individual element, the waveguide in the individual element has different widths at one end portion and the other end portion and the center line of the waveguide is located off the center of the individual element along the X-axis, and in the semiconductor layer stacked substrate including a first element forming region and a second element forming region which are adjacent to each other along the X-axis, two lengthwise split lines sandwiching the first element forming region and two lengthwise split lines sandwiching the second element forming region are misaligned along the X-axis.

Abstract: To provide a method of efficiently affording olefin polymers having a high molecular weight and a high melting point even under industrially advantageous high-temperature conditions. A production method of an olefin polymer to solve the above problem includes polymerizing monomer(s) including at least one ?-olefin having 3 or more carbon atoms at 50° C. to 200° C. in the presence of an olefin polymerization catalyst including; (A) a crosslinked metallocene compound represented by General Formula [I] below; and (B) at least one compound selected from (b-1) an organoaluminum oxy-compound, (b-2) a compound that forms an ion pair by reacting with the crosslinked metallocene compound (A), and (b-3) an organoalunimum compound.

Abstract: To provide a method of efficiently affording olefin polymers having a high molecular weight and a high melting point even under industrially advantageous high-temperature conditions. A production method of an olefin polymer to solve the above problem includes polymerizing monomer(s) including at least one ?-olefin having 3 or more carbon atoms at 50° C. to 200° C. in the presence of an olefin polymerization catalyst including; (A) a crosslinked metallocene compound represented by General Formula [I] below; and (B) at least one compound selected from (b-1) an organoaluminum oxy-compound, (b-2) a compound that forms an ion pair by reacting with the crosslinked metallocene compound (A), and (b-3) an organoalunimum compound.

Abstract: The present invention is a method for producing a polyhydric phenol, including the following steps (a) to (d): (a) a first step of producing (4S,5R,6S)-4,5,6-trihydroxy-2-cyclohexcene-1-one from 2-deoxy-scyllo-inosose by a dehydration reaction; (b) a second step of producing 1,2,4-trihydroxybenzene from the (4S,5R,6S)-4,5,6-trihydroxy-2-cyclohexene-1-one obtained in the first step by a dehydration reaction; (c) a third step of producing 4-hydroxycyclohexane-1,3-dione from the 1,2,4-trihydroxybenzene by a catalytic hydrogenation reaction with the use of a metal catalyst; and (d) a fourth step of producing hydroquinone by heating the 4-hydroxycyclohexane-1,3-dione.

Abstract: Provided is a method for producing catechol in a one-pot by reacting (4S,5R,6S)-4,5,6-trihydroxy-2-cyclohexene-1-one under hydrogen-reducing conditions while heating.

Abstract: The present invention is a method for producing a polyhydric phenol, including the following steps (a) to (d): (a) a first step of producing (4S,5R,6S)-4,5,6-trihydroxy-2-cyclohexcene-1-one from 2-deoxy-scyllo-inosose by a dehydration reaction; (b) a second step of producing 1,2,4-trihydroxybenzene from the (4S,5R,6S)-4,5,6-trihydroxy-2-cyclohexene-1-one obtained in the first step by a dehydration reaction; (c) a third step of producing 4-hydroxycyclohexane-1,3-dione from the 1,2,4-trihydroxybenzene by a catalytic hydrogenation reaction with the use of a metal catalyst; and (d) a fourth step of producing hydroquinone by heating the 4-hydroxycyclohexane-1,3-dione.

Abstract: A process for forming dielectric films containing at least metal atoms, silicon atoms, and oxygen atoms on a silicon substrate comprises a first step of oxidizing a surface portion of the silicon substrate to form a silicon dioxide film; a second step of forming a metal film on the silicon dioxide film in a non-oxidizing atmosphere; a third step of heating in a non-oxidizing atmosphere to diffuse the metal atoms constituting the metal film into the silicon dioxide film; and a fourth step of oxidizing the silicon dioxide film containing the diffused metal atoms to form the film containing the metal atoms, silicon atoms, and oxygen atoms.

Abstract: A method of forming dielectric films including a metal silicate on a silicon substrate comprises a first step of oxidizing a surface layer portion of the silicon substrate and forming a silicon dioxide film; a second step of irradiating ion on the surface of the silicon dioxide film and making the surface layer portion of the silicon dioxide film into a reaction-accelerating layer with Si—O cohesion cut; a third step of laminating a metal film on the reaction-accelerating layer in a non-oxidizing atmosphere; and a fourth step of oxidizing the metal film and forming a metal silicate film that diffuses a metal from the metal film to the silicon dioxide film.

Abstract: Provided is a method for producing catechol in a one-pot by reacting (4S,5R,6S)-4,5,6-trihydroxy-2-cyclohexene-1-one under hydrogen-reducing conditions while heating.

Abstract: Disclosed is a plasma processing apparatus and a plasma processing method, by which ions of plasma can be injected uniformly over the whole surface of a substrate to be processed, in a short time. Specifically, when the substrate is processed in a reaction container, the gas pressure inside the reaction container is increased. Alternatively, the distance between a plasma processing portion and the substrate is enlarged, or the substrate is temporally moved outwardly of the reaction container. As a further alternative, a shutter is disposed between the plasma producing zone and the substrate. With this procedure, incidence of ions of the plasma upon the substrate can be substantially intercepted for a predetermined time period from the start of plasma production.

Abstract: A process for forming dielectric films containing at least metal atoms, silicon atoms, and oxygen atoms on a silicon substrate comprises a first step of oxidizing a surface portion of the silicon substrate to form a silicon dioxide film; a second step of forming a metal film on the silicon dioxide film in a non-oxidizing atmosphere; a third step of heating in a non-oxidizing atmosphere to diffuse the metal atoms constituting the metal film into the silicon dioxide film; and a fourth step of oxidizing the silicon dioxide film containing the diffused metal atoms to form the film containing the metal atoms, silicon atoms, and oxygen atoms.

Abstract: A method of forming dielectric films including a metal silicate on a silicon substrate comprises a first step of oxidizing a surface layer portion of the silicon substrate and forming a silicon dioxide film; a second step of irradiating ion on the surface of the silicon dioxide film and making the surface layer portion of the silicon dioxide film into a reaction-accelerating layer with Si—O cohesion cut; a third step of laminating a metal film on the reaction-accelerating layer in a non-oxidizing atmosphere; and a fourth step of oxidizing the metal film and forming a metal silicate film that diffuses a metal from the metal film to the silicon dioxide film.

Abstract: A plasma treatment apparatus and a method of plasma treatment for reducing generation of Na atoms in the case where a silica glass and the like are used for a member made of dielectric material are provided. The provided plasma treatment apparatus includes a dielectric member having an impurity element forming positive and movable ions, a vacuum chamber partially sealed with the dielectric member, and a radiator radiating electromagnetic wave into the vacuum chamber through the dielectric member to generate plasma in the vacuum chamber and to treat a workpiece using the plasma. The apparatus further includes an electrode on the dielectric member on a surface opposite the surface exposed to the plasma. The generation of Na can be reduced by applying to the plasma a negative DC potential which is lower than a floating potential measured at the surface of the dielectric member exposed to the plasma.