Abstract: A plasma processing apparatus includes a plasma processing chamber and a source of microwaves. The microwaves are introduced to the processing chamber by a slotted annular waveguide having inner and outer arc-shaped slots. The distance between the centerline of the inner and outer arc-shaped slots is set to be an even multiple of a half wavelength of a microwave surface wave propagating along a surface of a dielectric window of the chamber. A distance between the centerline of the outer arc-shaped slot and an outer periphery of the dielectric window is set to be an odd multiple of the half wavelength of the microwave surface wave.

Abstract: A method for irradiating plasma of a material to a substrate and introducing the material into the substrate includes an irradiation step of irradiating the plasma to the substrate during an irradiation time period in which the material is not diffused in the substrate, and a non-irradiation step of stopping irradiation of the plasma to the substrate during a non-irradiation time period in which the plasma disappears, wherein the irradiation step and the non-irradiation step are repeated.

Abstract: Tricyclic triazolobenzazepine derivatives in the form or a prodrug are provided. The compounds according to the present invention are those represented by formula (I) and pharmacologically acceptable salts and solvates thereon. The compounds are useful as antiallergic agents and exhibit excellent bioavailability.

Abstract: Tricyclic triazolobenzazepine derivatives in the form or a prodrug are provided. The compounds according to the present invention are those represented by formula (I) and pharmacologically acceptable salts and solvates thereon. The compounds are useful as antiallergic agents and exhibit excellent bioavailability.

Abstract: A process for preparing a compound represented by formula (IIa?) wherein Q represents group (i) as defined in the specification and R2 to R5, R31, R32, and R52 are as defined in the specification, by (1) reacting a compound represented by formula (V) wherein R2 to R5 and R52 are as defined in the specification. with a compound represented by R31R32C?O wherein R31 and R32 are as defined in the specification; (2) reacting the compound prepared in (1) with a compound represented by R71—C(?O)—R72 wherein R71 and R72 each independently represent a chlorine atom, 4-nitrophenyl, or 1-imidazolyl; and (3) reacting the compound prepared in (2) with a compound represented by R33OH wherein R33 is as defined in the specification.

Abstract: Disclosed is a plasma processing apparatus and a plasma processing method, by which ions of plasma can be injected uniformly over the whole surface of a substrate to be processed, in a short time. Specifically, when the substrate is processed in a reaction container, the gas pressure inside the reaction container is increased. Alternatively, the distance between a plasma processing portion and the substrate is enlarged, or the substrate is temporally moved outwardly of the reaction container. As a further alternative, a shutter is disposed between the plasma producing zone and the substrate. With this procedure, incidence of ions of the plasma upon the substrate can be substantially intercepted for a predetermined time period from the start of plasma production.

Abstract: Disclosed is a plasma nitriding method by which an ultra-thin oxide-nitride film having a half-value depth of not greater than 0.8 nm can be produced, overcoming various inconveniences involved in conventional plasma nitriding methods. In one preferred form of the present invention, the plasma nitriding method includes the steps of introducing a substrate to be processed, into a reaction chamber, evacuating the reaction chamber, supplying a gas containing nitrogen atoms, into the reaction chamber at a predetermined flow rate, adjusting an exhaust conductance to maintain a predetermined pressure inside the reaction chamber, and applying an electric voltage into the reaction chamber to produce plasma to thereby cause nitriding of the surface of the substrate, wherein the gas further contains hydrogen atoms, wherein the predetermined pressure is not less than 2 Torr, and wherein a spacing between the substrate and a densest portion of the plasma is not less than 75 nm.

Abstract: A method for modifying a surface of a substrate to be processed, by utilizing plasma includes the steps of adjusting a temperature of the substrate from 200° C. to 400° C., introducing gas including nitrogen atoms or mixture gas including inert gas and the gas including nitrogen atoms into a plasma process chamber, adjusting pressure in the plasma process chamber above 13.3 Pa, generating plasma in the plasma process chamber, and injecting ions equal to or smaller than 10 eV in the plasma into the substrate to be processed.

Abstract: The present invention relates to polyether compounds, active hydrogen compounds and resin-forming compositions composed of the polyols, and methods for producing foams by employing the active hydrogen components. These polyether compounds have a decreased number of moles of added EO thereby maintaining the hydrophobicity and have sufficient reactivity as polyol components of resins, thereby having high reaction rates. Therefore, it is possible to provide resins having excellent resin properties (tensile strength, flexural strength, water-absorption swelling ratio, etc.).

Abstract: A method for modifying a surface of a substrate to be processed, by utilizing plasma includes the steps of adjusting a temperature of the substrate from 200° C. to 400° C., introducing gas including nitrogen atoms or mixture gas including inert gas and the gas including nitrogen atoms into a plasma process chamber, adjusting pressure in the plasma process chamber above 13.3 Pa, generating plasma in the plasma process chamber, and injecting ions equal to or smaller than 10 eV in the plasma into the substrate to be processed.

Abstract: A method for modifying a surface of a substrate to be processed, by utilizing microwave surface-wave plasma includes the steps of maintaining a temperature of the substrate to a temperature which substantially prevents a material injected by a plasma process into the substrate from diffusing in the substrate, and provides an anneal effect, introducing process gas including the material into a plasma process chamber, generating plasma in the plasma process chamber, and changing at least once an electron temperature of the plasma.

Abstract: Disclosed is a novel carbapenem derivative having a substituted imidazo[5,1-b]thiazole group at the 2-position on the carbapenem ring have high anti microbial activities against &bgr;-lactamase producing bacteria, MRSA, resistant-Pseudomonas aeruginosa, PRSP, enterococci, and influenza, and high stabilities to DHP-1.

Abstract: To provide a production method of a structure with which a degradation of a processing speed is suppressed and plasma processing is performed with using a reliable plasma processing apparatus and which is excellent in repeatability, a plasma processing apparatus, which includes a container whose inside can be exhausted and a gas supply port for supplying a process gas to the container and subjects to plasma processing an object to be processed placed in the container, is characterized in containing a light shielding film that disturbs the incidence of light, which may increase dielectric loss of a permeable window, to this dielectric window on the internal surface of the permeable window permeating high frequency energy for generating the plasma of the above-described gas, and is provided in the above-described container.

Abstract: An apparatus for measuring the dynamic characteristics of the vehicle wheel alignment in non-contact fashion with high accuracy is disclosed. A laser light source (4) emits a laser beam of a predetermined geometric pattern toward the wheel side surface. A laser beam control device (6) controls the width of the laser beam in such a manner as to be radiated only in a predetermined range of the wheel side surface. Two laser light sources (120), (121) emit non-parallel laser beams. A photdetecting device (122) receives the two laser beams and converts them to two corresponding image data. A processing unit calculates the distance between the two images based on the two image data and calculates the wheel alignment based on the same distance.

Abstract: Disclosed is a novel carbapenem derivative having a substituted imidazo[5,1-b]thiazole group at the 2-position on the, carbapenem ring have high anti-microbial activities against &bgr;-lactamase producing bacteria, MRSA, resistant-Pseudomonas aeruginosa, PRSP, enterococci, and influenza, and high stabilities to DHP-1.

Abstract: The present invention relates to polyether compounds, active hydrogen compounds and resin-forming compositions composed of the polyols, and methods for producing foams by employing the active hydrogen components. These polyether compounds have a decreased number of moles of added EO thereby maintaining the hydrophobicity and have sufficient reactivity as polyol components of resins, thereby having high reaction rates. Therefore, it is possible to provide resins having excellent resin properties (tensile strength, flexural strength, water-absorption swelling ratio, etc.).

Abstract: A plasma density measuring method which includes producing a surface wave at an interface between a dielectric member and a plasma, and measuring at least one of a plasma density and a relative change in plasma density, on the basis of the surface wave. A plasma processing system including a container having a window, and for storing therein a gas introduced thereinto, a dielectric member for closing the window of the container, a plasma voltage source for applying a high frequency voltage through the dielectric member to produce a plasma by use of the gas inside the container, wherein a predetermined process is performed by use of the thus produced plasma, a detecting system for detecting an electric field intensity distribution of a surface wave propagated through the dielectric member, and a feedback system for feeding back the result of detection by the detecting system, to determine a processing condition for the process.

Abstract: In order to eliminate a contact hole of a semiconductor substrate, a polymer dreg after ashing of all inside of a via hole is conducted, or an oxide layer on a barrier metal surface, hydrogen gas is changed to a hydrogen radical, the radical is primarily changed to a negative hydrogen ion, and the ion is introduced onto a wafer arranged in a vacuum container. In this manner, cleaning is done by assisting a negative hydrogen ion having its less generated secondary electrons without imparting plasma damage to an element.

Abstract: Disclosed is a novel carbapenem derivative having a substituted imidazo[5,1-b]thiazole group at the 2-position on the carbapenem ring have high anti-microbial activities against &bgr;-lactamase producing bacteria, MRSA, resistant-Pseudomonas aeruginosa, PRSP, enterococci, and influenza, and high stabilities to DHP-1.

Abstract: Tricyclic triazolobenzazepine derivatives in the form of a prodrug are provided. The compounds according to the present invention are those represented by formula (I) and pharmacologically acceptable salts and solvates thereof. The compounds are useful as antiallergic agents and exhibit excellent bioavailability.