Abstract: A semiconductor light emitting device (10) is provided with a base substrate (12) and three LED chips (14A, 14B, and 14C) disposed on the base substrate (12). Each LED chip (14A, 14B, and 14C) includes a semiconductor multilayer structure (20) and has a rhombus shape with interior angles of approximately 60° and approximately 120° in plan view. Each semiconductor multilayer structure (20) has an HCP single crystal structure and includes a light emission layer (24). The LED chips (14A, 14B, and 14C) are arranged on the base substrate (12) so as to face one another at a vertex forming the larger interior angle in plan view. With this arrangement, the LED chips (14A, 14B, and 14C) as a whole form a substantially regular hexagonal shape.

Abstract: A light-emitting module (1) includes a substrate (10), a plurality of light-emitting elements (14) formed on the substrate (10), and phosphor layers (15) covering each of the light-emitting elements (14). Each of the phosphor layers (15) includes a first phosphor region (15a) and a second phosphor region (15b) that are divided in the direction substantially parallel to the surface of the substrate (10). Each of the first phosphor region (15a) and the second phosphor region (15b) includes a phosphor that absorbs light emitted from the light-emitting element (14) and emits fluorescence. The maximum peak wavelength of fluorescence emitted from the first phosphor region (15a) is longer than that of fluorescence emitted from the second phosphor region (15b).

Abstract: A light-emitting device 1 includes a base 2 and a light-emitting element 3 that is disposed on the base 2. The light-emitting element 3 is made up of a plurality of semiconductor layers including a light-emitting layer, and at the same time, is covered with a wavelength converting portion 4 that includes a wavelength converting material. The light-emitting layer emits primary light, and the wavelength converting material absorbs part of the primary light and emits secondary light. The luminance of the primary light emitted from the edge portion of the light extraction surface of the light-emitting device 3 is higher than the luminance of the primary light emitted from the inner region located inside the edge portion, and the ratio of the primary light and the secondary light that are emitted from a light extraction surface 6 of the wavelength converting portion 4 is substantially uniform across the light extraction surface 6 of the wavelength converting portion 4.

Abstract: A semiconductor light-emitting device 10 has a semiconductor chip 12 for emitting light having a wavelength in blue to ultraviolet regions, and a sealing portion 16 formed in at least a partial region on a passage path on which the light is passed. The sealing portion 16 includes a sealing material 16d which is a composite material including a matrix material 16a made of a resin, nano-particles 16b made of an inorganic material which are distributed in the matrix material 16a, the nano-particle 16b having an effective particle size which is ¼ or less of the wavelength of the light in the matrix material 16a, and a fluorescent material 16c.

Abstract: An LED bare chip which is one type of a semiconductor light emitting device (2) includes a multilayer epitaxial structure (6) composed of a p-GaN layer (12), an InGaN/GaN MQW light emitting layer (14) and an n-GaN layer (16). A p-electrode (18) is formed on the p-GaN layer (12), and an n-electrode (20) is formed on the n-GaN layer (16). An Au plating layer (4) is formed on the p-electrode (18). The Au plating layer (4) supports the multilayer epitaxial structure (6) and conducts heat generated in the light emitting layer (14). The Au plating layer (4) is electrically divided into two portions by a polyimide member (10). One of the two portions (4A) is connected to the p-electrode (18), to be constituted as an anode power supply terminal, and the other portion (4K) is connected to the n-electrode (20) by a wiring (22), to be constituted as a cathode power supply terminal.

Abstract: A blue LED 18 that is a semiconductor light-emitting device and that emits blue light as primary light having a peak wavelength in a visible region and a phosphor plate 30 that is a wavelength converter and that converts a portion of the blue light emitted from the blue LED 18 into yellow light as secondary light having a longer peak wavelength in the visible region than the peak wavelength and emits the yellow light in combination with a remainder of the blue light left unconverted. The phosphor plate 30 includes (a) a main body 39 extending across a light-emission path of the blue LED 18 and (b) a light-emitting part 42 composed of a plurality of columnar protrusions 44 on a part of the main body 39 in a direction in which the light exits.

Abstract: Provided is a bulb-type lamp including a lightweight housing with great handleability. An LED light bulb (1) comprises: an LED module (3) on which LEDs are mounted; a cylindrically-shaped case (7) having openings at both ends, which are first and second ends; a mount member (5) on a front surface of which the LED module (3) is mounted, the mount member (5) closing a corresponding one of the openings of the case (7) by being in contact with an inner circumferential surface of the first end of the case (7); a base member (91) attached to the second end of the case (7); and a lighting circuit (11) that is disposed inside the case (7). A wall thickness of the case (7) is in a range of 200 ?m to 500 ?m inclusive, and the wall thickness of at least one portion of the case (7) decreases from the first end toward the second end of the case (7).

Abstract: A semiconductor light emitting device (10) is provided with a base substrate (12) and three LED chips (14A, 14B, and 14C) disposed on the base substrate (12). Each LED chip (14A, 14B, and 14C) includes a semiconductor multilayer structure (20) and has a rhombus shape with interior angles of approximately 60° and approximately 120° in plan view. Each semiconductor multilayer structure (20) has an HCP single crystal structure and includes a light emission layer (24). The LED chips (14A, 14B, and 14C) are arranged on the base substrate (12) so as to face one another at a vertex forming the larger interior angle in plan view. With this arrangement, the LED chips (14A, 14B, and 14C) as a whole form a substantially regular hexagonal shape.

Abstract: [Problem to be Solved] To provide a bulb-type lamp that can achieve improvement in the heat dissipation properties and size/weight reduction simultaneously, and that can lighten thermal load on a lighting circuit. [Solution] A bulb-type lamp 1 is composed of: an LED module 3 including LEDs; a cylindrically-shaped case 7, to one end of which a base member 15 is attached and which allows dissipation of heat therefrom, the heat being generated by the LEDs emitting light; a mount member 5, on which the LED module 3 is mounted, which closes the other end of the case 7, and allows conduction of the heat to the case 7; a lighting circuit 11 that, upon receiving power via the base member 15, causes the LEDs to emit light; and a circuit holder 13 positioned inside the case 7, with the lighting circuit 11 disposed inside the circuit holder 13. The air space exists between the circuit holder 13 and the case7, and between the circuit holder 13 and the mount member 5.

Abstract: A semiconductor light-emitting device 10 has a semiconductor chip 12 for emitting light having a wavelength in blue to ultraviolet regions, and a sealing portion 16 formed in at least a partial region on a passage path on which the light is passed. The sealing portion 16 includes a sealing material 16d which is a composite material including a matrix material 16a made of a resin, nano-particles 16b made of an inorganic material which are distributed in the matrix material 16a, the nano-particle 16b having an effective particle size which is ¼ or less of the wavelength of the light in the matrix material 16a, and a fluorescent material 16c.

Abstract: A semiconductor light emitting device (10) is provided with a base substrate (12) and three LED chips (14A, 14B, and 14C) disposed on the base substrate (12). Each LED chip (14A, 14B, and 14C) includes a semiconductor multilayer structure (20) and has a rhombus shape with interior angles of approximately 60 and approximately 120 in plan view. Each semiconductor multilayer structure (20) has an HCP single crystal structure and includes a light emission layer (24). The LED chips (14A, 14B, and 14C) are arranged on the base substrate (12) so as to face one another at a vertex forming the larger interior angle in plan view. With this arrangement, the LED chips (14A, 14B, and 14C) as a whole form a substantially regular hexagonal shape.

Abstract: A lighting device includes a heatsink 70, a socket 10 and an LED module 60. The LED module 60 has a light emitting unit 62 in a central part of a top side of a metal base substrate 63 composed of an insulating plate and a metal plate. The LED module 60 is warped such that the central part protrudes on a heatsink 70 side, which is the side opposite to the light emitting unit 62 side. The LED module 60 is mounted on the heatsink 70 in a state of the surrounds of the light emitting unit 62 being pressed according to pressing units 14T, 14L, and 14D of the socket 10. Pressing the surrounds of the light emitting unit 62 against the heatsink 70 ensures that a central part of the warping of the LED module 60 contacts the heatsink 70.

Abstract: In an LED array chip (2), LEDs (6) are connected together in series by a bridging wire (30). The LEDs (6) each have a semiconductor multilayer structure (8-18) including a light emitting layer (14). Here, the semiconductor multilayer structure (8-18) is epitaxially grown on a front surface of an SiC substrate (4). A phosphor film (48) covers the LEDs (6). Two power supply terminals (36 and 38), which are electrically independent from each other, are formed on a back surface of the SiC substrate (4). The power supply terminal (36) is connected to a cathode electrode (32) of an LED (6a) at a lower potential end by a bridging wire (40) and a plated-through hole (42). The power supply terminal (38) is connected to an anode electrode (34) of an LED (6d) at a higher potential end by a bridging wire (44) and a plated-through hole (46).

Abstract: The present invention aims to provide a semiconductor light emitting device that may be firmly attached to a substrate with maintaining excellent light emitting efficiency, and a manufacturing method of the same, and a lighting apparatus and a display apparatus using the same. In order to achieve the above object, the semiconductor light emitting device according to the present invention includes a luminous layer, a light transmission layer disposed over a main surface of the luminous layer, and having depressions on a surface facing away from the luminous layer, and a transmission membrane disposed on the light transmission layer so as to follow contours of the depressions, and light from the luminous layer is irradiated so as to pass through the light transmission layer and the transmission membrane.

Abstract: A light-emitting device (1) having a base (10) and a light-emitting element (11) placed on the base (10) includes a first sealing material layer (12) covering the light-emitting element (11) and a second sealing material layer (13) surrounding a side surface of the first sealing material layer (12), wherein the refractive index of the first sealing material layer (12) and the refractive index of the second sealing material layer (13) are different from each other. The light-emitting device (1) is capable of controlling a radiation pattern from the light-emitting element (11) by controlling the refractive index of the first sealing material layer (12) and the refractive index of the second sealing material layer (13). This can facilitate the miniaturization and reduction in thickness of the light-emitting device (1), and prevent the decrease in a light output efficiency of the light-emitting device (1).

Abstract: A light-emitting module (1) includes: a package (10); a base board (13) and a semiconductor multi-layered film (50) accommodated in the package (10); and a plurality of terminal portions (16) for supplying electricity to the semiconductor multi-layered film (50), wherein the package (10) includes a metallic support portion (11b) supporting the base board (13), a plurality of through-holes (11c) for insertion of the respective terminal portions (16), an insulating member (11d) keeping electrical insulation between the metallic support portion (11b) and the terminal portions (16), and between the respective terminal portions (16), and a window portion (12a); the base board (13) is made of an inorganic heat-dissipating material that keeps electrical insulation between the semiconductor multi-layered film (50) and the metallic support portion (11b); and one opening of each of the through-holes (11c) is provided on a side surface of the package (10).

Abstract: A semiconductor light emitting device comprises an element that emits light and a substrate on a main surface of which the element is mounted. The main surface of the substrate composed of two areas, (i) a mount area which is rectangle and on which the element is mounted, and (ii) a pad area that is equipped with a pad for wire bonding. The pad area is contiguous to the mount area on one side of the mount area, and the pad area decreases in width continuously or stepwise in a direction away from the one side.

Abstract: A semiconductor light-emitting device (1) includes a semiconductor multilayer film (11), a base material (12) for supporting the semiconductor multilayer film (11), a first feed terminal (17a), and a second feed terminal (17b). A protruding portion (12c) is formed on the back surface (12b) of the base material (12) that is opposite to the principal surface (12a) facing the semiconductor multilayer film (11). The first and second feed terminals (17a, 17b) are formed in contact with at least one selected from the portions (12d) of the back surface (12b) other than the protruding portion (12c) and the sides (12e) of the base material (12). The end face (121c) of the protruding portion (12c) is insulated electrically from the first and second feed terminals (17a, 17b). With this configuration, the semiconductor light-emitting device can improve the heat dissipation and achieve high integration easily.

Abstract: A light-emitting module (1) includes a substrate (10), a plurality of light-emitting elements (14) formed on the substrate (10), and phosphor layers (15) covering each of the light-emitting elements (14). Each of the phosphor layers (15) includes a first phosphor region (15a) and a second phosphor region (15b) that are divided in the direction substantially parallel to the surface of the substrate (10). Each of the first phosphor region (15a) and the second phosphor region (15b) includes a phosphor that absorbs light emitted from the light-emitting element (14) and emits fluorescence. The maximum peak wavelength of fluorescence emitted from the first phosphor region (15a) is longer than that of fluorescence emitted from the second phosphor region (15b).

Abstract: In an LED array chip (2), LEDs (6) are connected together in series by a bridging wire (30) The LEDs (6) each have a semiconductor multilayer structure (8-18) including a light emitting layer (14) Here, the semiconductor multilayer structure (8-18) is epitaxially grown on a front surface of an SiC substrate (4) A phosphor film (48) covers the LEDs (6) Two power supply terminals (36 and 38), which are electrically independent from each other, are formed on a back surface of the SiC substrate (4) The power supply terminal (36) is connected to a cathode electrode (32) of an LED (6a) at a lower potential end by a bridging wire (40) and a plated-through hole (42) The power supply terminal (38) is connected to an anode electrode (34) of an LED (6d) at a higher potential end by a bridging wire (44) and a plated-through hole (46).