Abstract: A light-emitting module (1) includes a substrate (10), a plurality of light-emitting elements (14) formed on the substrate (10), and phosphor layers (15) covering each of the light-emitting elements (14). Each of the phosphor layers (15) includes a first phosphor region (15a) and a second phosphor region (15b) that are divided in the direction substantially parallel to the surface of the substrate (10). Each of the first phosphor region (15a) and the second phosphor region (15b) includes a phosphor that absorbs light emitted from the light-emitting element (14) and emits fluorescence. The maximum peak wavelength of fluorescence emitted from the first phosphor region (15a) is longer than that of fluorescence emitted from the second phosphor region (15b).

Abstract: A lighting device includes a heatsink 70, a socket 10 and an LED module 60. The LED module 60 has a light emitting unit 62 in a central part of a top side of a metal base substrate 63 composed of an insulating plate and a metal plate. The LED module 60 is warped such that the central part protrudes on a heatsink 70 side, which is the side opposite to the light emitting unit 62 side. The LED module 60 is mounted on the heatsink 70 in a state of the surrounds of the light emitting unit 62 being pressed according to pressing units 14T, 14L, and 14D of the socket 10. Pressing the surrounds of the light emitting unit 62 against the heatsink 70 ensures that a central part of the warping of the LED module 60 contacts the heatsink 70.

Abstract: A semiconductor light emitting device (10) is provided with a base substrate (12) and three LED chips (14A, 14B, and 14C) disposed on the base substrate (12). Each LED chip (14A, 14B, and 14C) includes a semiconductor multilayer structure (20) and has a rhombus shape with interior angles of approximately 60° and approximately 120° in plan view. Each semiconductor multilayer structure (20) has an HCP single crystal structure and includes a light emission layer (24). The LED chips (14A, 14B, and 14C) are arranged on the base substrate (12) so as to face one another at a vertex forming the larger interior angle in plan view. With this arrangement, the LED chips (14A, 14B, and 14C) as a whole form a substantially regular hexagonal shape.

Abstract: The present invention aims to provide a semiconductor light emitting device that may be firmly attached to a substrate with maintaining excellent light emitting efficiency, and a manufacturing method of the same, and a lighting apparatus and a display apparatus using the same. In order to achieve the above object, the semiconductor light emitting device according to the present invention includes a luminous layer, a light transmission layer disposed over a main surface of the luminous layer, and having depressions on a surface facing away from the luminous layer, and a transmission membrane disposed on the light transmission layer so as to follow contours of the depressions, and light from the luminous layer is irradiated so as to pass through the light transmission layer and the transmission membrane.

Abstract: The light-emitting apparatus (1) of the present invention includes: a storage case (12) that includes a base board (10) having a concave portion (10a) and a lid portion (11) covering the concave portion (10a); and a plurality of light-emitting elements (13) that are disposed on an inner surface (12a) of the storage case (12), an opening (11a) is formed in the lid portion (11), at least a part of the inner surface (12a) is a light-reflecting surface that wave-guides light emitted by the light-emitting elements (13) as light sources to a position directly underneath the opening (11), and a reflecting portion (15) that reflects the light emitted by the light-emitting elements (13) as the light sources toward the opening (11a) is formed directly underneath the opening (11a). Thereby, the light-emitting apparatus having a point light source with high brightness can be provided.

Abstract: An LED array chip (2), which is one type of a semiconductor light emitting device, includes an array of LEDs (6), a base substrate (4) supporting the array of the LEDs (6), and a phosphor film (48). The array of LEDs (6) is formed by dividing a multilayer epitaxial structure including a light emitting layer into a plurality of portions. The phosphor film (48) covers an upper surface of the array of the LEDs (6) and a part of every side surface of the array of LEDs (6). Here, the part extends from the upper surface to the light emitting layer.

Abstract: The present invention aims to provide a semiconductor light emitting device (1) that may be firmly attached to a substrate with maintaining excellent light emitting efficiency, and a manufacturing method of the same, and a lighting apparatus and a display apparatus using the same. In order to achieve the above object, the semiconductor light emitting device (1) according to the present invention includes a luminous layer (23), a light transmission layer (10) disposed over a main surface of the luminous layer (23), and having depressions (11) on a surface facing away from the luminous layer (23), and a transmission membrane (70) disposed on the light transmission layer (10) so as to follow contours of the depressions, and light from the luminous layer (23) is irradiated so as to pass through the light transmission layer (10) and the transmission membrane (70).

Abstract: A light-emitting device 1 includes a base 2 and a light-emitting element 3 that is disposed on the base 2. The light-emitting element 3 is made up of a plurality of semiconductor layers including a light-emitting layer, and at the same time, is covered with a wavelength converting portion 4 that includes a wavelength converting material. The light-emitting layer emits primary light, and the wavelength converting material absorbs part of the primary light and emits secondary light. The luminance of the primary light emitted from the edge portion of the light extraction surface of the light-emitting device 3 is higher than the luminance of the primary light emitted from the inner region located inside the edge portion, and the ratio of the primary light and the secondary light that are emitted from a light extraction surface 6 of the wavelength converting portion 4 is substantially uniform across the light extraction surface 6 of the wavelength converting portion 4.

Abstract: An LED array chip (2), which is one type of a semiconductor light emitting device, includes an array of LEDs (6), a base substrate (4) supporting the array of the LEDs (6), and a phosphor film (48). The array of LEDs (6) is formed by dividing a multilayer epitaxial structure including a light emitting layer into a plurality of portions. The phosphor film (48) covers an upper surface of the array of the LEDs (6) and a part of every side surface of the array of LEDs (6). Here, the part extends from the upper surface to the light emitting layer.

Abstract: A lighting device includes a heatsink 70, a socket 10 and an LED module 60. The LED module 60 has a light emitting unit 62 in a central part of a top side of a metal base substrate 63 composed of an insulating plate and a metal plate. The LED module 60 is warped such that the central part protrudes on a heatsink 70 side, which is the side opposite to the light emitting unit 62 side. The LED module 60 is mounted on the heatsink 70 in a state of the surrounds of the light emitting unit 62 being pressed according to pressing units 14T, 14L, and 14D of the socket 10. Pressing the surrounds of the light emitting unit 62 against the heatsink 70 ensures that a central part of the warping of the LED module 60 contacts the heatsink 70.

Abstract: A light-emitting device (1) includes a base (10), a light-emitting element (11) placed on the base (10), and a wavelength converting layer (12) that covers the light-emitting element (11). The wavelength converting layer (12) includes a wavelength converting portion (13) that converts a wavelength of light from the light-emitting element (11), and a light guide portion (14) made of a light-transmitting material, and the light guide portion (14) extends from a light-emitting element (11) side to a light extraction side of the wavelength converting layer (12). Consequently, it is possible to provide a light-emitting device that can be miniaturized and reduced in thickness easily and can prevent a decrease in the light extraction efficiency.

Abstract: A light-emitting module (1) includes: a package (10); a base board (13) and a semiconductor multi-layered film (50) accommodated in the package (10); and a plurality of terminal portions (16) for supplying electricity to the semiconductor multi-layered film (50), wherein the package (10) includes a metallic support portion (11b) supporting the base board (13), a plurality of through-holes (11c) for insertion of the respective terminal portions (16), an insulating member (11d) keeping electrical insulation between the metallic support portion (11b) and the terminal portions (16), and between the respective terminal portions (16), and a window portion (12a); the base board (13) is made of an inorganic heat-dissipating material that keeps electrical insulation between the semiconductor multi-layered film (50) and the metallic support portion (11b); and one opening of each of the through-holes (11c) is provided on a side surface of the package (10).

Abstract: An LED bare chip which is one type of a semiconductor light emitting device (2) includes a multilayer epitaxial structure (6) composed of a p-GaN layer (12), an InGaN/GaN MQW light emitting layer (14) and an n-GaN layer (16). A p-electrode (18) is formed on the p-GaN layer (12), and an n-electrode (20) is formed on the n-GaN layer (16). An Au plating layer (4) is formed on the p-electrode (18). The Au plating layer (4) supports the multilayer epitaxial structure (6) and conducts heat generated in the light emitting layer (14). The Au plating layer (4) is electrically divided into two portions by a polyimide member (10). One of the two portions (4A) is connected to the p-electrode (18), to be constituted as an anode power supply terminal, and the other portion (4K) is connected to the n-electrode (20) by a wiring (22), to be constituted as a cathode power supply terminal.

Abstract: A light-emitting device (1) having a base (10) and a light-emitting element (11) placed on the base (10) includes a first sealing material layer (12) covering the light-emitting element (11) and a second sealing material layer (13) surrounding a side surface of the first sealing material layer (12), wherein the refractive index of the first sealing material layer (12) and the refractive index of the second sealing material layer (13) are different from each other. The light-emitting device (1) is capable of controlling a radiation pattern from the light-emitting element (11) by controlling the refractive index of the first sealing material layer (12) and the refractive index of the second sealing material layer (13). This can facilitate the miniaturization and reduction in thickness of the light-emitting device (1), and prevent the decrease in a light output efficiency of the light-emitting device (1).

Abstract: An LED bare chip which is one type of a semiconductor light emitting device (2) includes a multilayer epitaxial structure (6) composed of a p-GaN layer (12), an InGaN/GaN MQW light emitting layer (14) and an n-GaN layer (16). A p-electrode (18) is formed on the p-GaN layer (12), and an n-electrode (20) is formed on the n-GaN layer (16). An Au plating layer (4) is formed on the p-electrode (18). The Au plating layer (4) supports the multilayer epitaxial structure (6) and conducts heat generated in the light emitting layer (14). The Au plating layer (4) is electrically divided into two portions by a polyimide member (10). One of the two portions (4A) is connected to the p-electrode (18), to be constituted as an anode power supply terminal, and the other portion (4K) is connected to the n-electrode (20) by a wiring (22), to be constituted as a cathode power supply terminal.

Abstract: The following explains an LED module that can achieve favorable light extraction efficiency without increasing a cost. An LED module (100) includes LED devices (110), an LED mounting module (120) on which the LED devices (110) are mounted, and a lens board (130) attached to a front surface of the LED mounting module (120). The LED mounting module (120) includes a printed wiring board (123) and a reflecting board (126). The printed wiring board (123) is an insulation board (122) on which a wiring pattern (124), used to mount the LED devices (110), is formed. The reflecting board (126) is made of a resin material, and has therein reflecting holes (126a) provided in correspondence with locations, on the printed wiring board (123), where the LED devices (110) are mounted. The reflecting board (126) and the printed wiring board (123) are directly adhered to each other at their surfaces that face each other.

Abstract: A semiconductor light-emitting device 10 has a semiconductor chip 12 for emitting light having a wavelength in blue to ultraviolet regions, and a sealing portion 16 formed in at least a partial region on a passage path on which the light is passed. The sealing portion 16 includes a sealing material 16d which is a composite material including a matrix material 16a made of a resin, nano-particles 16b made of an inorganic material which are distributed in the matrix material 16a, the nano-particle 16b having an effective particle size which is ¼ or less of the wavelength of the light in the matrix material 16a, and a fluorescent material 16c.

Abstract: A semiconductor light-emitting device (1) includes a semiconductor multilayer film (11), a base material (12) for supporting the semiconductor multilayer film (11), a first feed terminal (17a), and a second feed terminal (17b). A protruding portion (12c) is formed on the back surface (12b) of the base material (12) that is opposite to the principal surface (12a) facing the semiconductor multilayer film (11). The first and second feed terminals (17a, 17b) are formed in contact with at least one selected from the portions (12d) of the back surface (12b) other than the protruding portion (12c) and the sides (12e) of the base material (12). The end face (121c) of the protruding portion (12c) is insulated electrically from the first and second feed terminals (17a, 17b). With this configuration, the semiconductor light-emitting device can improve the heat dissipation and achieve high integration easily.

Abstract: An illumination source 1 is capable of outputting illumination light at different color temperatures, by adjustment of luminous intensity ratios of light emitting devices 3-6, where each of the light emitting devices emits light in a corresponding one of at least four colors, the at least four colors including a first red and a second red that is different from the first red. Accordingly, the illumination source 1 is capable of outputting illumination light at an incandescent lamp color, a neutral white color, and a daylight color, and exhibiting favorable color rendering characteristics for all the three colors.

Abstract: A lighting apparatus of the present invention comprises: a substrate; a semiconductor light emitting device mounted on the substrate; a resin layer formed on a mounting surface of the substrate and having a lens portion that seals the semiconductor light emitting device; and a reflecting plate. Here, the reflecting plate and the resin layer are positioned with a space therebetween. Herewith, it is possible to offer a lighting apparatus which (i) has high luminance, (ii) causes sufficient heat release, and (iii) is less likely to cause detachment of the resin layer.