Abstract: A light-emitting module (1) includes a substrate (10), a plurality of light-emitting elements (14) formed on the substrate (10), and phosphor layers (15) covering each of the light-emitting elements (14). Each of the phosphor layers (15) includes a first phosphor region (15a) and a second phosphor region (15b) that are divided in the direction substantially parallel to the surface of the substrate (10). Each of the first phosphor region (15a) and the second phosphor region (15b) includes a phosphor that absorbs light emitted from the light-emitting element (14) and emits fluorescence. The maximum peak wavelength of fluorescence emitted from the first phosphor region (15a) is longer than that of fluorescence emitted from the second phosphor region (15b).

Abstract: The present invention aims to provide a semiconductor light emitting device that may be firmly attached to a substrate with maintaining excellent light emitting efficiency, and a manufacturing method of the same, and a lighting apparatus and a display apparatus using the same. In order to achieve the above object, the semiconductor light emitting device according to the present invention includes a luminous layer, a light transmission layer disposed over a main surface of the luminous layer, and having depressions on a surface facing away from the luminous layer, and a transmission membrane disposed on the light transmission layer so as to follow contours of the depressions, and light from the luminous layer is irradiated so as to pass through the light transmission layer and the transmission membrane.

Abstract: In an LED array chip (2), LEDs (6) are connected together in series by a bridging wire (30). The LEDs (6) each have a semiconductor multilayer structure (8-18) including a light emitting layer (14). Here, the semiconductor multilayer structure (8-18) is epitaxially grown on a front surface of an SiC substrate (4). A phosphor film (48) covers the LEDs (6). Two power supply terminals (36 and 38), which are electrically independent from each other, are formed on a back surface of the SiC substrate (4). The power supply terminal (36) is connected to a cathode electrode (32) of an LED (6a) at a lower potential end by a bridging wire (40) and a plated-through hole (42). The power supply terminal (38) is connected to an anode electrode (34) of an LED (6d) at a higher potential end by a bridging wire (44) and a plated-through hole (46).

Abstract: Disclosed is a semiconductor light emitting device (10) that includes an LED chip (14) mounted on a base substrate (12) and a phosphor (16) covering the LED chip (14). The LED chip (14) is substantially in the shape of a regular hexagonal prism and the phosphor (16) is substantially in the shape of a cylinder. The phosphor (16) is so disposed that the axis of the cylinder substantially coincides with the axis of the prism.

Abstract: A semiconductor light emitting device comprises an element that emits light and a substrate on a main surface of which the element is mounted. The main surface of the substrate composed of two areas, (i) a mount area which is rectangle and on which the element is mounted, and (ii) a pad area that is equipped with a pad for wire bonding. The pad area is contiguous to the mount area on one side of the mount area, and the pad area decreases in width continuously or stepwise in a direction away from the one side.

Abstract: A semiconductor light emitting device (10) is provided with a base substrate (12) and three LED chips (14A, 14B, and 14C) disposed on the base substrate (12). Each LED chip (14A, 14B, and 14C) includes a semiconductor multilayer structure (20) and has a rhombus shape with interior angles of approximately 60 and approximately 120 in plan view. Each semiconductor multilayer structure (20) has an HCP single crystal structure and includes a light emission layer (24). The LED chips (14A, 14B, and 14C) are arranged on the base substrate (12) so as to face one another at a vertex forming the larger interior angle in plan view. With this arrangement, the LED chips (14A, 14B, and 14C) as a whole form a substantially regular hexagonal shape.

Abstract: An LED array chip (2) includes blue LEDs (6) and red LEDs (8). The blue LEDs (6) are formed by epitaxial growth on an SiC substrate (4). Bonding pads (46 and 48) are formed on the SiC substrate (4) in a wafer fabrication process. The red LEDs (8) are separately manufactured from the blue LEDs (6), and flip-chip mounted on the bonding pads (46 and 48) formed on the SiC substrate.

Abstract: An LED bare chip which is one type of a semiconductor light emitting device (2) includes a multilayer epitaxial structure (6) composed of a p-GaN layer (12), an InGaN/GaN MQW light emitting layer (14) and an n-GaN layer (16). A p-electrode (18) is formed on the p-GaN layer (12), and an n-electrode (20) is formed on the n-GaN layer (16). An Au plating layer (4) is formed on the p-electrode (18). The Au plating layer (4) supports the multilayer epitaxial structure (6) and conducts heat generated in the light emitting layer (14). The Au plating layer (4) is electrically divided into two portions by a polyimide member (10). One of the two portions (4A) is connected to the p-electrode (18), to be constituted as an anode power supply terminal, and the other portion (4K) is connected to the n-electrode (20) by a wiring (22), to be constituted as a cathode power supply terminal.

Abstract: A semiconductor light-emitting device includes: a semiconductor multilayer film, a substrate supporting the semiconductor multilayer film; and a phosphor layer formed on the substrate so as to cover the semiconductor multilayer film. The phosphor layer has an outer edge of a cross section taken in a direction parallel to the principal surface of the substrate having a substantially circular shape or a substantially regular polygonal shape having five or more sides. An outer edge of the principal surface of the substrate is formed in a substantially circular shape or a substantially regular polygonal shape having five or more sides. With this configuration, light obtained therefrom has less non-uniformity in color and a high luminous flux can be realized.

Abstract: An LED chip (2) is composed of a p-GaN layer (10), an n-GaN layer (14), and an MQW emission layer (12) that is sandwiched between the GaN layers (10 and 14). Each layer is made of a GaN semiconductor. Light exits the LED chip (2) through the n-GaN layer (14). A p-electrode (16) of the LED chip (2) has a surface profile (24B) defined by a plurality of columnar projections (24A) formed in a uniformly distributed relation on the surface facing toward the p-GaN layer (10). The p-electrode (16) is in contact with the p-GaN layer (10) at the top surface of each projection (24A).

Abstract: An LED array chip (2), which is one type of a semiconductor light emitting device, includes an array of LEDs (6), a base substrate (4) supporting the array of the LEDs (6), and a phosphor film (48). The array of LEDs (6) is formed by dividing a multilayer epitaxial structure having a N-sided polygonal cross-section where N is an integer equal to or larger than 6. The phosphor film (48) covers an upper surface of the array of the LEDs (6) and a part of every side surface of the array of LEDs (6). Here, the part extends from the upper surface to the light emitting layer.

Abstract: Disclosed is a semiconductor light emitting device (10) that includes an LED chip (14) mounted on a base substrate (12) and a phosphor (16) covering the LED chip (14). The LED chip (14) is substantially in the shape of a regular hexagonal prism and the phosphor (16) is substantially in the shape of a cylinder. The phosphor (16) is so disposed that the axis of the cylinder substantially coincides with the axis of the prism.

Abstract: A light-emitting device (1) includes the following: a substrate (10) that includes a base material (11) and a first conductor pattern (12) formed on a principal surface (11a) of the base material (11); a semiconductor light-emitting element (14) that is mounted on the first conductor pattern (12); and a phosphor layer (15) that is formed on the substrate (10) to cover the semiconductor light-emitting element (14) and emits fluorescence as a result of absorption of light emitted from the semiconductor light-emitting element (14). A side (15a) of the phosphor layer (15) and a side (10a) of the substrate (10) are connected continuously. The light-emitting device (1) can suppress color non-uniformity of light to be produced.

Abstract: An illumination source is composed of a white LED of a first light source color and an orange LED of a second light source color, so that light is emitted in a color created as a result of mixing the first and second light source colors. The first and second light source colors are represented on the 1931 CIE chromaticity diagram by a first point P1 and a second point P2, respectively. The first point P1 is substantially on the Planckian Locus PL. The second point P2 is at such a position that a line segment L1 connecting the first and second points P1 and P2 is substantially in parallel with a tangent line L3 to the Planckian Locus PL. The tangent line L3 has a point of tangency on a line L2 that is normal to the Planckian Locus PL and passes through the first point P1.

Abstract: The following explains an LED module that can achieve favorable light extraction efficiency without increasing a cost. An LED module (100) includes LED devices (110), an LED mounting module (120) on which the LED devices (110) are mounted, and a lens board (130) attached to a front surface of the LED mounting module (120). The LED mounting module (120) includes a printed wiring board (123) and a reflecting board (126). The printed wiring board (123) is an insulation board (122) on which a wiring pattern (124), used to mount the LED devices (110), is formed. The reflecting board (126) is made of a resin material, and has therein reflecting holes (126a) provided in correspondence with locations, on the printed wiring board (123), where the LED devices (110) are mounted. The reflecting board (126) and the printed wiring board (123) are directly adhered to each other at their surfaces that face each other.

Abstract: A light-emitting device includes a light-emitting element 4, a light-transmitting sealing portion covering the light-emitting element 4, a multilayer substrate 6 on which the light-emitting element 4 is mounted, and a reflecting plate 7 disposed on the multilayer substrate 6, the sealing portion includes a first sealing layer 1 covering an outer surface of the light-emitting element 4, a second sealing layer 2 covering the first sealing layer 1 and a third sealing layer 3 covering the second sealing layer 2, the reflecting plate 7 surrounds the light-emitting element 4, and the third sealing layer 3 covers the reflecting plate 7 and is made to adhere to the multilayer substrate 6. This both suppresses a decrease in luminous flux of the light-emitting device using an LED and improves the reliability of the sealing portion.

Abstract: An LED chip (2) is composed of a p-GaN layer (10), an n-GaN layer (14), and an MQW emission layer (12) that is sandwiched between the GaN layers (10 and 14). Each layer is made of a GaN semiconductor. Light exits the LED chip (2) through the n-GaN layer (14). A p-electrode (16) of the LED chip (2) has a surface profile (24B) defined by a plurality of columnar projections (24A) formed in a uniformly distributed relation on the surface facing toward the p-GaN layer (10). The p-electrode (16) is in contact with the p-GaN layer (10) at the top surface of each projection (24A).

Abstract: A semiconductor light-emitting device includes: a semiconductor multilayer film, a substrate supporting the semiconductor multilayer film; and a phosphor layer formed on the substrate so as to cover the semiconductor multilayer film. The phosphor layer has an outer edge of a cross section taken in a direction parallel to the principal surface of the substrate having a substantially circular shape or a substantially regular polygonal shape having five or more sides. An outer edge of the principal surface of the substrate is formed in a substantially circular shape or a substantially regular polygonal shape having five or more sides. With this configuration, light obtained therefrom has less non-uniformity in color and a high luminous flux can be realized.