Abstract: A surface-emitting semiconductor laser includes a substrate, a first semiconductor multi-layered reflector of a first conductivity type, an active region, a second semiconductor multi-layered reflector of a second conductivity type, a columnar structure, a current-confining layer including a conductive area surrounded with an oxidized area, a first electrode defining a light-emitting window, a first dielectric film covering the light-emitting window, and a second dielectric film formed on the first dielectric film. The second dielectric film has an asymmetrical shape having a long axis and a short axis, the second dielectric film is located at a position overlapping with the conductive area, the second refractive index n2 is greater than the first refractive index n1, the thickness of the first dielectric film is an odd multiple of ?/4·n1 (?: oscillation wavelength), and the thickness of the second dielectric film is an odd multiple of ?/4·n2.

Abstract: A clutch control device includes: a plurality of hydraulic clutches built into a transmission; a clutch switching pattern storage device in which a plurality of clutch switching patterns, each defining engage/release changeover timing with which the plurality of hydraulic clutches are engaged/released are stored in correspondence to individual speed change patterns adopted by the transmission; a clutch switching pattern selection device that selects a clutch switching pattern stored in the clutch switching pattern storage device in correspondence to a speed change pattern for the transmission at a time of speed change; and a hydraulic control device that executes hydraulic control for the plurality of hydraulic clutches in correspondence to the clutch switching pattern selected by the clutch switching pattern selection device.

Abstract: A DA converter includes: an analog signal output section that generates an output current and a non-output current according to a value of a digital input signal in response to a gain control signal supplied to adjust gain, and that outputs an analog signal produced by current-voltage conversion of the output current and causes the non-output current to flow to a reference potential; a gain control signal generating section that generates a gain current and a non-select current according to a value of a digital gain control signal, and that generates the gain control signal by current-voltage conversion of the gain current and supplies the gain control signal to the analog signal output section; and a correction current generating section that generates, based on the non-select current of the gain control signal generating section, a correction current that complements an amount of current fluctuation due to changes in gain settings in the gain control signal generating section, and that causes the correction

Abstract: A shift control device for a work vehicle that has a stepped automatic transmission includes: a control device that controls an engine rotation rate at the work vehicle and the stepped automatic transmission; a forward/reverse switchover member that outputs a forward/reverse switchover command for the work vehicle; and an operation quantity detection device that detects an accelerator pedal operation quantity in the work vehicle is operated. As the forward/reverse switchover command is output via the forward/reverse switchover member, the control device executes forward/reverse switchover control for the stepped automatic transmission and also controls the engine rotation rate so as to decrease the engine rotation rate gradually to a target lower limit value selected to ensure that a reverse rotation of a turbine runner at a torque converter in the work vehicle does not occur.

Abstract: The resin molding method comprises the steps of: feeding a first resin to a cavity concave portion of a molding die set, which is opened, and a second resin to a pot thereof; feeding a work to a prescribed position of the molding die set, which corresponds to the cavity concave portion; closing the molding die set so as to clamp the work; and pressurizing and sending the molten second resin, which has been molten in the pot, to the cavity concave portion, by a manner of transfer-molding, so as to mix the molten first resin, which has been molten in the cavity concave portion, and the molten second resin and cure the mixed resin with maintaining a prescribed resin pressure.

Abstract: A surface-emitting semiconductor laser includes a substrate, a first semiconductor multi-layered reflector of a first conductivity type, an active region, a second semiconductor multi-layered reflector of a second conductivity type, a columnar structure, a current-confining layer including a conductive area surrounded with an oxidized area, a first electrode defining a light-emitting window, a first dielectric film covering the light-emitting window, and a second dielectric film formed on the first dielectric film. The second dielectric film has an asymmetrical shape having a long axis and a short axis, the second dielectric film is located at a position overlapping with the conductive area, the second refractive index n2 is greater than the first refractive index n1, the thickness of the first dielectric film is an odd multiple of ?/4·n1 (?: oscillation wavelength), and the thickness of the second dielectric film is an odd multiple of ?/4·n2.

Abstract: A solid-state imaging device includes a pixel array unit configured by arranging plural unit pixels including charge generating units and output transistors that output processing object signals corresponding to charges generated by the charge generating units, an imaging-condition determining unit that determines whether a large light-amount imaging condition, when an amount of light larger than that of light representing a saturation level is made incident on the charge generating units, is satisfied, and a control unit that performs control, on condition that the imaging-condition determining unit determines that the large light-amount imaging condition is satisfied, to correct an output signal based on processing object signals outputted from the unit pixels such that a harmful effect due to the large light-amount imaging condition is suppressed in the output signal.

Abstract: Provided is a method for driving a surface emitting semiconductor laser including an active region that generates light, a resonator structure disposed such that it sandwiches the active region, and a driving electrode that provides power to the active region. The surface emitting semiconductor laser has an internal resistance defined by voltage and current applied to the driving electrode. The method includes applying a modulation signal to the driving electrode, in which the modulation signal has a current amplitude defined by a first current value and a second current value that is greater than the first current value. The modulation signal is in a negative gradient region in which the internal resistance decreases in contrast to the increase of the current.

Abstract: A semiconductor laser apparatus has a Zener diode containing a first semiconductor region of a first conduction type and a second semiconductor region of a second conduction type joined with the first semiconductor region, and a vertical-cavity surface-emitting semiconductor laser diode stacked above the Zener diode and containing at least a first mirror layer of a first conduction type, a second mirror layer of a second conduction type and an active region sandwiched between the first and second mirror layers. The first semiconductor region and the second mirror layer are electrically connected and the second semiconductor region and the first mirror layer are electrically connected.

Abstract: A vertical cavity surface emitting laser that includes: a substrate; a first reflector of a first conductive type formed on the substrate; an active region formed on the first reflector; a second reflector of a second conductive type formed on the active region; and a current confining layer formed between the first reflector and the second reflector; and a metallic electrode that is formed on the second reflector, and is electrically connected to the second reflector. A conductive region with an anisotropy where a length in a longitudinal direction is different from a length in a short direction is formed in the current confining layer, and an opening defining a beam aperture is formed in the metallic electrode, and a diameter of the opening in the longitudinal direction is smaller than the length of the conductive region in the longitudinal direction.

Abstract: A vertical cavity surface emitting laser that includes: a substrate; a first semiconductor multilayer reflector; an active region; a second semiconductor multilayer reflector; a columnar structure formed on the substrate; a current narrowing layer that is formed inside of the columnar structure, and has a conductive region surrounded by an oxidization region selectively oxidized; a first electrode that is formed at a top of the columnar structure, and defines a beam window; a first insulating film that covers the beam window; and a second insulating film of which a second refractive index is larger than the first refractive index. A reflection ratio in a second region where the second insulating film is formed is lower than a reflection ratio in a first region where only the first insulating film is formed.

Abstract: A DA converter includes: an analog signal output section that generates an output current and a non-output current according to a value of a digital input signal in response to a gain control signal supplied to adjust gain, and that outputs an analog signal produced by current-voltage conversion of the output current and causes the non-output current to flow to a reference potential; a gain control signal generating section that generates a gain current and a non-select current according to a value of a digital gain control signal, and that generates the gain control signal by current-voltage conversion of the gain current and supplies the gain control signal to the analog signal output section; and a correction current generating section that generates, based on the non-select current of the gain control signal generating section, a correction current that complements an amount of current fluctuation due to changes in gain settings in the gain control signal generating section, and that causes the correction

Abstract: A semiconductor device includes a substrate, a semiconductor layer formed on the substrate, and an optically functional portion formed by using at least a portion of the semiconductor layer. The optically functional portion performs light emission or light reception. The semiconductor device further includes a first driving electrode that is electrically connected to a semiconductor layer on a surface of the optically functional portion, and the first driving electrode drives the optically functional portion. The semiconductor device further includes an encapsulating electrode that is formed on the semiconductor layer to surround periphery of the optically functional portion, and electrically connected to the first driving electrode.

Abstract: There is provided a semiconductor laser apparatus. An electrode of a semiconductor laser diode is bonded via a die attach and the electrode of the semiconductor laser diode includes Au and at least one of materials that compose the die attach except Au, in advance.

Abstract: A clutch control device includes: a plurality of hydraulic clutches built into a transmission; a clutch switching pattern storage device in which a plurality of clutch switching patterns, each defining engage/release changeover timing with which the plurality of hydraulic clutches are engaged/released are stored in correspondence to individual speed change patterns adopted by the transmission; a clutch switching pattern selection device that selects a clutch switching pattern stored in the clutch switching pattern storage device in correspondence to a speed change pattern for the transmission at a time of speed change; and a hydraulic control device that executes hydraulic control for the plurality of hydraulic clutches in correspondence to the clutch switching pattern selected by the clutch switching pattern selection device.

Abstract: A shift control device for a work vehicle that has a stepped automatic transmission includes: a control device that controls an engine rotation rate at the work vehicle and the stepped automatic transmission; a forward/reverse switchover member that outputs a forward/reverse switchover command for the work vehicle; and an operation quantity detection device that detects an accelerator pedal operation quantity in the work vehicle is operated. As the forward/reverse switchover command is output via the forward/reverse switchover member, the control device executes forward/reverse switchover control for the stepped automatic transmission and also controls the engine rotation rate so as to decrease the engine rotation rate gradually to a target lower limit value selected to ensure that a reverse rotation of a turbine runner at a torque converter in the work vehicle does not occur.

Abstract: A light-emitting module outputting laser beam emitted from a semiconductor light-emitting element via a lens, the light-emitting module includes a first main plane, a mount portion on the first main plane that mounts the semiconductor light-emitting element, a lens holding portion that holds the lens so that a light axis of the lens corresponds to a reference line crossed at right angles to the first main plane, a semiconductor light-receiving element that receives the laser beam reflected by the lens out of the laser beam emitted from the semiconductor light-emitting element. The semiconductor light-receiving element is positioned on the light axis of the lens and the semiconductor light-emitting element is provided away from the light axis of the lens.

Abstract: A semiconductor laser apparatus includes a substrate, a vertical-cavity surface-emitting semiconductor laser diode (VCSEL) including a first and second mirror layers of a first and second conduction types, respectively, an active region between the first and second mirror layers, a first and second electrode layers electrically connected with the first and second mirror layers, respectively, and at least one Zener diode including a first and second semiconductor regions of a first and second conduction types, respectively, and a third and fourth electrode layers electrically connected with the first and second semiconductor regions, respectively. The second semiconductor region is formed in a portion of the first semiconductor region and forms a PN junction with the first semiconductor region. The VCSEL and the Zener diode are formed on the substrate. The first and second electrode layers are electrically connected with the fourth and third electrode layers, respectively.

Abstract: Provided is a method for driving a surface emitting semiconductor laser including an active region that generates light, a resonator structure disposed such that it sandwiches the active region, and a driving electrode that provides power to the active region. The surface emitting semiconductor laser has an internal resistance defined by voltage and current applied to the driving electrode. The method includes applying a modulation signal to the driving electrode, in which the modulation signal has a current amplitude defined by a first current value and a second current value that is greater than the first current value. The modulation signal is in a negative gradient region in which the internal resistance decreases in contrast to the increase of the current.

Abstract: A solid-state imaging device includes a pixel array unit configured by arranging plural unit pixels including charge generating units and output transistors that output processing object signals corresponding to charges generated by the charge generating units, an imaging-condition determining unit that determines whether a large light-amount imaging condition, when an amount of light larger than that of light representing a saturation level is made incident on the charge generating units, is satisfied, and a control unit that performs control, on condition that the imaging-condition determining unit determines that the large light-amount imaging condition is satisfied, to correct an output signal based on processing object signals outputted from the unit pixels such that a harmful effect due to the large light-amount imaging condition is suppressed in the output signal.