Patents by Inventor Hideo Nakayama
Hideo Nakayama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7460749Abstract: The first and second light-emitting regions are provided on the light source. When the first optical fiber having the first core diameter is connected, the light emitted from the first light-emitting region enters the first core. When the second optical fiber having a greater core diameter than the first core diameter is connected, the lights emitted from the first and second light-emitting regions enter the second core. It is thus possible to connect the optical transmission device with multiple optical fibers having different core diameters. It is thus possible to provide the optical transmission device and the communication device, which are low in cost and high in convenience.Type: GrantFiled: January 25, 2005Date of Patent: December 2, 2008Assignee: Fuji Xerox Co., Ltd.Inventors: Osamu Ueno, Masao Funada, Masaaki Miura, Tsutomu Hamada, Shinya Kyozuka, Osamu Takanashi, Hideo Nakayama, Jun Sakurai, Akira Sakamoto
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Patent number: 7444083Abstract: In an optical signal transmission system which can perform high-speed optical transmission not lower than 1 Gbps, VCSEL has light-emission points. A core diameter of an optical fiber GI-POF is set to not lower than 200 ?m, and the light-emission points of VCSEL are arranged inside an outer periphery at an end face of GI-POF. A polymerization composition material constituting the core of GI-POF is made of a compound containing deuterated poly methacrylic ester. A wavelength of the light beam of VCSEL is set to the range of 770 nm to 810 nm.Type: GrantFiled: July 9, 2004Date of Patent: October 28, 2008Assignees: Fuji Photo Film Co., Ltd., Fuji Xerox Co., Ltd.Inventors: Yuichi Ohashi, Kenji Matsumoto, Hiroyuki Hiiro, Yoshisada Nakamura, Mikihiko Kato, Osamu Ueno, Tsutomu Hamada, Shinya Kyozuka, Hideo Nakayama, Tomo Baba
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Publication number: 20080224167Abstract: A semiconductor device includes a substrate, a semiconductor layer formed on the substrate, and an optically functional portion formed by using at least a portion of the semiconductor layer. The optically functional portion performs light emission or light reception. The semiconductor device further includes a first driving electrode that is electrically connected to a semiconductor layer on a surface of the optically functional portion, and the first driving electrode drives the optically functional portion. The semiconductor device further includes an encapsulating electrode that is formed on the semiconductor layer to surround periphery of the optically functional portion, and electrically connected to the first driving electrode.Type: ApplicationFiled: November 6, 2007Publication date: September 18, 2008Inventors: Yasuaki Kuwata, Hideo Nakayama, Ryoji Ishii, Kayoko Nakamura
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Patent number: 7221828Abstract: A module for an optical wavelength division multiplexing communication includes semiconductor lasers emitting lights of wavelengths, a support member on which the semiconductor lasers are mounted, an optical fiber to which the lights emitted from the semiconductor lasers are incident, and a component that positions the optical fiber with respect to the support member and fixes the optical fiber thereto.Type: GrantFiled: June 7, 2004Date of Patent: May 22, 2007Assignee: Fuji Xerox Co., Ltd.Inventors: Hideo Nakayama, Takeshi Nakamura, Akira Sakamoto, Akemi Murakami
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Publication number: 20070091952Abstract: There is provided a semiconductor laser apparatus. An electrode of a semiconductor laser diode is bonded via a die attach and the electrode of the semiconductor laser diode includes Au and at least one of materials that compose the die attach except Au, in advance.Type: ApplicationFiled: January 25, 2006Publication date: April 26, 2007Applicant: FUJI XEROX CO., LTD.Inventors: Naotaka Mukoyama, Hideo Nakayama, Akemi Murakami, Ryoji Ishii, Yasuaki Kuwata
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Publication number: 20070019960Abstract: A light-emitting module outputting laser beam emitted from a semiconductor light-emitting element via a lens, the light-emitting module includes a first main plane, a mount portion on the first main plane that mounts the semiconductor light-emitting element, a lens holding portion that holds the lens so that a light axis of the lens corresponds to a reference line crossed at right angles to the first main plane, a semiconductor light-receiving element that receives the laser beam reflected by the lens out of the laser beam emitted from the semiconductor light-emitting element. The semiconductor light-receiving element is positioned on the light axis of the lens and the semiconductor light-emitting element is provided away from the light axis of the lens.Type: ApplicationFiled: December 29, 2005Publication date: January 25, 2007Applicant: FUJI XEROX CO., LTD.Inventors: Yasuaki Kuwata, Hideo Nakayama, Akemi Murakami, Ryoji Ishii, Naotaka Mukoyama
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Patent number: 7157298Abstract: A method of fabricating a surface emitting semiconductor laser includes the following steps. A first laminate of semiconductor layers and a second laminate of semiconductor layers are formed on a substrate. The first laminate includes a first reflection mirror layer of a first conduction type, an active region, a III-V semiconductor layer containing Al, and a second reflection mirror layer of a second conduction type, the second laminate being used for monitoring and having an oxidizable region. The first and second laminates are etched so as to form mesas on the substrate in which side surface of the III-V semiconductor layer contained in the first laminate is exposed. Oxidization of the III-V semiconductor layer from the side surface is started at an oxidization rate.Type: GrantFiled: March 11, 2003Date of Patent: January 2, 2007Assignee: Fuji Xerox Co., Ltd.Inventors: Hideo Nakayama, Akira Sakamoto
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Patent number: 7078257Abstract: A method of fabricating a surface emitting semiconductor laser includes a first step of forming, on a substrate, multiple monitor-use semiconductor layers having stripes radiating from a center of the substrate, and a laser portion that includes semiconductor layers and is located on the periphery of the multiple monitor-use semiconductor layers, a second step of monitoring oxidized conditions on the multiple monitor-use semiconductor layers when a selectively oxidized region is formed in the laser portion, and a third step of controlling oxidization of the selectively oxidized region on the basis of the oxidized conditions thus monitored.Type: GrantFiled: March 11, 2003Date of Patent: July 18, 2006Assignee: Fuji Xerox Co., LtdInventors: Akira Sakamoto, Hideo Nakayama, Yasuaki Miyamoto, Jun Sakurai
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Patent number: 7079561Abstract: A method of fabricating a surface emitting semiconductor laser includes a first step of forming, on a substrate, multiple monitor-use semiconductor layers having stripes radiating from a center of the substrate, and a laser portion that includes semiconductor layers and is located on the periphery of the multiple monitor-use semiconductor layers, a second step of monitoring oxidized conditions on the multiple monitor-use semiconductor layers when a selectively oxidized region is formed in the laser portion, and a third step of controlling oxidization of the selectively oxidized region on the basis of the oxidized conditions thus monitored.Type: GrantFiled: April 14, 2005Date of Patent: July 18, 2006Assignee: Fuji Xerox Co., LtdInventors: Akira Sakamoto, Hideo Nakayama, Yasuaki Miyamoto, Jun Sakurai
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Patent number: 7079562Abstract: A method of fabricating a surface emitting semiconductor laser includes a first step of forming, on a substrate, multiple monitor-use semiconductor layers having stripes radiating from a center of the substrate, and a laser portion that includes semiconductor layers and is located on the periphery of the multiple monitor-use semiconductor layers, a second step of monitoring oxidized conditions on the multiple monitor-use semiconductor layers when a selectively oxidized region is formed in the laser portion, and a third step of controlling oxidization of the selectively oxidized region on the basis of the oxidized conditions thus monitored.Type: GrantFiled: April 14, 2005Date of Patent: July 18, 2006Assignee: Fuji Xerox Co., Ltd.Inventors: Akira Sakamoto, Hideo Nakayama, Yasuaki Miyamoto, Jun Sakurai
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Publication number: 20050271107Abstract: A semiconductor laser apparatus has a Zener diode containing a first semiconductor region of a first conduction type and a second semiconductor region of a second conduction type joined with the first semiconductor region, and a vertical-cavity surface-emitting semiconductor laser diode stacked above the Zener diode and containing at least a first mirror layer of a first conduction type, a second mirror layer of a second conduction type and an active region sandwiched between the first and second mirror layers. The first semiconductor region and the second mirror layer are electrically connected and the second semiconductor region and the first mirror layer are electrically connected.Type: ApplicationFiled: November 18, 2004Publication date: December 8, 2005Inventors: Akemi Murakami, Hideo Nakayama, Yasuaki Kuwata, Teiichi Suzuki, Ryoji Ishii
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Patent number: 6966706Abstract: A light-emitting device includes 16 vertical-cavity surface-emitting laser diodes (VCSELs) disposed like a 4×4 grid, for example, in a sufficiently narrower range than the end surface of an optical fiber. The 16 VCSELs disposed in the light-emitting device emit optical signals in the same direction. Since the VCSELs are disposed with a concentration in the sufficiently narrower range than the end surface of the optical fiber as described above, if the optical signals emitted from the VCSELs are spread, almost all optical signals generated by the light-emitting device are incident on the end surface of the optical fiber and are transmitted through the optical fiber.Type: GrantFiled: July 30, 2004Date of Patent: November 22, 2005Assignee: Fuji Xerox Co., Ltd.Inventors: Tsutomu Hamada, Shinya Kyozuka, Tomo Baba, Hideo Nakayama
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Publication number: 20050238076Abstract: A semiconductor laser apparatus includes a substrate, a vertical-cavity surface-emitting semiconductor laser diode (VCSEL) including a first and second mirror layers of a first and second conduction types, respectively, an active region between the first and second mirror layers, a first and second electrode layers electrically connected with the first and second mirror layers, respectively, and at least one Zener diode including a first and second semiconductor regions of a first and second conduction types, respectively, and a third and fourth electrode layers electrically connected with the first and second semiconductor regions, respectively. The second semiconductor region is formed in a portion of the first semiconductor region and forms a PN junction with the first semiconductor region. The VCSEL and the Zener diode are formed on the substrate. The first and second electrode layers are electrically connected with the fourth and third electrode layers, respectively.Type: ApplicationFiled: November 2, 2004Publication date: October 27, 2005Inventors: Yasuaki Kuwata, Hideo Nakayama, Akemi Murakami, Ryoji Ishii
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Publication number: 20050185688Abstract: A method of fabricating a surface emitting semiconductor laser includes the following steps. A first laminate of semiconductor layers and a second laminate of semiconductor layers are formed on a substrate. The first laminate includes a first reflection mirror layer of a first conduction type, an active region, a III-V semiconductor layer containing Al, and a second reflection mirror layer of a second conduction type, the second laminate being used for monitoring and having an oxidizable region. The first and second laminates are etched so as to form mesas on the substrate in which side surface of the III-V semiconductor layer contained in the first laminate is exposed. Oxidization of the III-V semiconductor layer from the side surface is started at an oxidization rate.Type: ApplicationFiled: April 22, 2005Publication date: August 25, 2005Applicant: Fuji Xerox Co., Ltd.Inventors: Hideo Nakayama, Akira Sakamoto
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Publication number: 20050180476Abstract: A method of fabricating a surface emitting semiconductor laser includes a first step of forming, on a substrate, multiple monitor-use semiconductor layers having stripes radiating from a center of the substrate, and a laser portion that includes semiconductor layers and is located on the periphery of the multiple monitor-use semiconductor layers, a second step of monitoring oxidized conditions on the multiple monitor-use semiconductor layers when a selectively oxidized region is formed in the laser portion, and a third step of controlling oxidization of the selectively oxidized region on the basis of the oxidized conditions thus monitored.Type: ApplicationFiled: April 14, 2005Publication date: August 18, 2005Applicant: Fuji Xerox Co., Ltd.Inventors: Akira Sakamoto, Hideo Nakayama, Yasuaki Miyamoto, Jun Sakurai
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Publication number: 20050180478Abstract: A method of fabricating a surface emitting semiconductor laser includes a first step of forming, on a substrate, multiple monitor-use semiconductor layers having stripes radiating from a center of the substrate, and a laser portion that includes semiconductor layers and is located on the periphery of the multiple monitor-use semiconductor layers, a second step of monitoring oxidized conditions on the multiple monitor-use semiconductor layers when a selectively oxidized region is formed in the laser portion, and a third step of controlling oxidization of the selectively oxidized region on the basis of the oxidized conditions thus monitored.Type: ApplicationFiled: April 14, 2005Publication date: August 18, 2005Applicant: Fuji Xerox Co., Ltd.Inventors: Akira Sakamoto, Hideo Nakayama, Yasuaki Miyamoto, Jun Sakurai
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Publication number: 20050180688Abstract: The first and second light-emitting regions are provided on the light source. When the first optical fiber having the first core diameter is connected, the light emitted from the first light-emitting region enters the first core. When the second optical fiber having a greater core diameter than the first core diameter is connected, the lights emitted from the first and second light-emitting regions enter the second core. It is thus possible to connect the optical transmission device with multiple optical fibers having different core diameters. It is thus possible to provide the optical transmission device and the communication device, which are low in cost and high in convenience.Type: ApplicationFiled: January 25, 2005Publication date: August 18, 2005Applicant: Fuji Xerox Co., Ltd.Inventors: Osamu Ueno, Masao Funada, Masaaki Miura, Tsutomu Hamada, Shinya Kyozuka, Osamu Takanashi, Hideo Nakayama, Jun Sakurai, Akira Sakamoto
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Publication number: 20050169336Abstract: A surface-emitting semiconductor laser includes comprising a substrate, a first mesa that is formed on the substrate and includes at least one mesa capable of emitting laser light, and a second mesa that is formed on the substrate and includes at least one mesa restraining emission of laser light.Type: ApplicationFiled: July 27, 2004Publication date: August 4, 2005Applicant: FUJI XEROX CO., LTD.Inventors: Ryoji Ishii, Hideo Nakayama, Yasuaki Kuwata
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Patent number: 6889805Abstract: A check valve is installed in a hydraulic line for hydraulic oil to be fed to a forward movement hydraulic clutch, while an accumulator for accumulating some amount of the hydraulic oil fed to the hydraulic clutch is installed between the check valve and the hydraulic clutch. Further installed is a control spool that is operated by the hydraulic oil fed to the forward movement hydraulic clutch and that cooperates with the check valve to hold the hydraulic oil accumulated in the accumulator. According to this arrangement, even if the oil pressure drops momentarily due to a speed gear shift, the pressure for the hydraulic clutch before the gear shift is held by the hydraulic oil accumulated in the accumulator. Thus, a delay in torque restoration due to a slip of the hydraulic clutch can be eliminated, so that an operator can be freed from having a feeling of torque loss or a shock, and a feeling of uneasiness such as a feeling of reversing on an uphill slope, during the gear shift.Type: GrantFiled: July 24, 2002Date of Patent: May 10, 2005Assignee: TCM CorporationInventors: Hideo Nakayama, Mamoru Kobayashi, Eiichi Sakai
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Publication number: 20050031354Abstract: In an optical signal transmission system which can perform high-speed optical transmission not lower than 1 Gbps, VCSEL has light-emission points. A core diameter of an optical fiber GI-POF is set to not lower than 200 ?m, and the light-emission points of VCSEL are arranged inside an outer periphery at an end face of GI-POF. A polymerization composition material constituting the core of GI-POF is made of a compound containing deuterated poly methacrylic ester. A wavelength of the light beam of VCSEL is set to the range of 770 nm to 810 nm.Type: ApplicationFiled: July 9, 2004Publication date: February 10, 2005Applicants: FUJI PHOTO FILM CO., LTD., FUJI XEROX CO., LTD.Inventors: Yuichi Ohashi, Kenji Matsumoto, Hiroyuki Hiiro, Yoshisada Nakamura, Mikihiko Kato, Osamu Ueno, Tsutomu Hamada, Shinya Kyozuka, Hideo Nakayama, Tomo Baba