Abstract: A light-emitting device includes 16 vertical-cavity surface-emitting laser diodes (VCSELs) disposed like a 4×4 grid, for example, in a sufficiently narrower range than the end surface of an optical fiber. The 16 VCSELs disposed in the light-emitting device emit optical signals in the same direction. Since the VCSELs are disposed with a concentration in the sufficiently narrower range than the end surface of the optical fiber as described above, if the optical signals emitted from the VCSELs are spread, almost all optical signals generated by the light-emitting device are incident on the end surface of the optical fiber and are transmitted through the optical fiber.

Abstract: A module for an optical wavelength division multiplexing communication includes semiconductor lasers emitting lights of wavelengths, a support member on which the semiconductor lasers are mounted, an optical fiber to which the lights emitted from the semiconductor lasers are incident, and a component that positions the optical fiber with respect to the support member and fixes the optical fiber thereto.

Abstract: A light-emitting device includes 16 vertical-cavity surface-emitting laser diodes (VCSELs) disposed like a 4×4 grid, for example, in a sufficiently narrower range than the end surface of an optical fiber. The 16 VCSELs disposed in the light-emitting device emit optical signals in the same direction. Since the VCSELs are disposed with a concentration in the sufficiently narrower range than the end surface of the optical fiber as described above, if the optical signals emitted from the VCSELs are spread, almost all optical signals generated by the light-emitting device are incident on the end surface of the optical fiber and are transmitted through the optical fiber.

Abstract: A method of fabricating a surface emitting semiconductor laser includes a first step of forming, on a substrate, multiple monitor-use semiconductor layers having stripes radiating from a center of the substrate, and a laser portion that includes semiconductor layers and is located on the periphery of the multiple monitor-use semiconductor layers, a second step of monitoring oxidized conditions on the multiple monitor-use semiconductor layers when a selectively oxidized region is formed in the laser portion, and a third step of controlling oxidization of the selectively oxidized region on the basis of the oxidized conditions thus monitored.

Abstract: A check valve is installed in a hydraulic line for hydraulic oil to be fed to a forward movement hydraulic clutch, while an accumulator for accumulating some amount of the hydraulic oil fed to the hydraulic clutch is installed between the check valve and the hydraulic clutch. Further installed is a control spool that is operated by the hydraulic oil fed to the forward movement hydraulic clutch and that cooperates with the check valve to hold the hydraulic oil accumulated in the accumulator. According to this arrangement, even if the oil pressure drops momentarily due to a speed gear shift, the pressure for the hydraulic clutch before the gear shift is held by the hydraulic oil accumulated in the accumulator. Thus, a delay in torque restoration due to a slip of the hydraulic clutch can be eliminated, so that an operator can be freed from having a feeling of torque loss or a shock, and a feeling of uneasiness such as a feeling of reversing on an uphill slope, during the gear shift.

Abstract: A method of fabricating a surface emitting semiconductor laser includes the following steps. A first laminate of semiconductor layers and a second laminate of semiconductor layers are formed on a substrate. The first laminate includes a first reflection mirror layer of a first conduction type, an active region, a III-V semiconductor layer containing Al, and a second reflection mirror layer of a second conduction type, the second laminate being used for monitoring and having an oxidizable region. The first and second laminates are etched so as to form mesas on the substrate in which side surface of the III-V semiconductor layer contained in the first laminate is exposed. Oxidization of the III-V semiconductor layer from the side surface is started at an oxidization rate.

Abstract: The present invention provides a surface emitting semiconductor laser, comprising: a semiconductor substrate having sequentially layered thereon a lower multi-layer mirror, an active layer region, and an upper multi-layer mirror that, together with the lower multi-layer mirror, contributes to the formation of a cavity; an upper electrode disposed on an upper layer of the upper multi-layer mirror and provided with an aperture that forms an emission region of a laser beam generated at the active layer region; and a current confinement portion disposed between the upper electrode and the lower multi-layer mirror and provided with an aperture that forms a current path; wherein an aperture diameter of the upper electrode and an aperture diameter of the current confinement portion are determined such that a difference between an optical loss of the cavity in a higher-order lateral mode of the laser beam and an optical loss of the cavity in a fundamental lateral mode of the laser beam becomes a value in the vicinity

Abstract: A surface emitting laser and a surface emitting laser array capable of high-luminance optical output in fundamental transverse mode, which can be produced easily with good reproducibility and with small position variation. The surface emitting laser has an active layer region composed of an active layer and upper and lower spacer layers deposited on both sides thereof and reflection layers deposited on both sides of the active layer region, an upper reflecting layer deposited on the upper spacer layer of the active layer region, a lower reflecting layer deposited on the lower spacer layer of the active layer region, and a secondary cavity formed by a first mode control layer and a second mode control layer placed on the periphery of the region of emission of the laser beam at the upper reflecting layer.

Abstract: A light-emitting device includes 16 vertical-cavity surface-emitting laser diodes (VCSELs) disposed like a 4×4 grid, for example, in a sufficiently narrower range than the end surface of an optical fiber. The 16 VCSELs disposed in the light-emitting device emit optical signals in the same direction. Since the VCSELs are disposed with a concentration in the sufficiently narrower range than the end surface of the optical fiber as described above, if the optical signals emitted from the VCSELs are spread, almost all optical signals generated by the light-emitting device are incident on the end surface of the optical fiber and are transmitted through the optical fiber.

Abstract: A surface emitting semiconductor laser that is easy to manufacture and has a high-intensity fundamental lateral mode optical output power. The surface emitting semiconductor laser has a semiconductor substrate on which are sequentially laminated a lower n-type DBR layer, an active layer region, an upper p-type DBR layer, a p-side electrode that is an upper layer of the upper n-type DBR layer and functions as an upper electrode provided with an aperture that forms an emission region for a laser beam, and a current confinement portion formed by oxidization. On the basis of the reflectance of a cavity in a region corresponding to the p-side electrode, a metal aperture diameter (Wmetal) of the aperture and a diameter (Woxide) of the current confinement portion are determined such that the difference between an optical loss of a cavity in a higher-order lateral mode of a laser beam and an optical loss of a cavity in a fundamental lateral mode of a laser beam becomes larger.

Abstract: The present invention provides a surface emitting semiconductor laser, comprising: a semiconductor substrate having sequentially layered thereon a lower multi-layer mirror, an active layer region, and an upper multi-layer mirror that, together with the lower multi-layer mirror, contributes to the formation of a cavity; an upper electrode disposed on an upper layer of the upper multi-layer mirror and provided with an aperture that forms an emission region of a laser beam generated at the active layer region; and a current confinement portion disposed between the upper electrode and the lower multi-layer mirror and provided with an aperture that forms a current path; wherein an aperture diameter of the upper electrode and an aperture diameter of the current confinement portion are determined such that a difference between an optical loss of the cavity in a higher-order lateral mode of the laser beam and an optical loss of the cavity in a fundamental lateral mode of the laser beam becomes a value in the vicinity

Abstract: A surface emitting laser and a surface emitting laser array capable of high-luminance optical output in fundamental transverse mode, which can be produced easily with good reproducibility and with small position variation.

Abstract: A surface emitting semiconductor array is provided with a plurality of surface emitting semiconductor laser units, each surface emitting semiconductor laser unit has a surface emitting semiconductor laser body comprising top and bottom spacer layers sandwiching an active layers and top and bottom reflection films sandwiching the above-mentioned spacer layers with each surface emitting semiconductor laser body formed on a conductive bottom contact layer having a flat area larger than the flat area of the body, which units are insulated by insulating films from each other and arranged in the matrix form on an insulating substrate.

Abstract: It is to provide a surface emitting semiconductor laser device having a long life time and uniform light output characteristics. A periphery of an upper surface and a side surface of a mesa structure is covered with a silicon oxide nitride film 34 as an inorganic insulating film, the mesa structure comprising a lower DBR 16 of a first conductive type formed on a first primary surface of an n-type GaAs substrate 12, having formed thereon an active region 24, an upper DBR 26 containing an AlAs layer 32 as the lowermost layer, and a p-type GaAs contact layer 28.

Abstract: An image recording apparatus has an array light source having a plurality of light-emitting elements arrayed in a predetermined density; a photosensitive member exposed to light beams emitted from the plural light-emitting elements so that images are recorded by fixing a traveling path of the light beams from the plural light-emitting elements to the photosensitive member and by moving the photosensitive member relative to the array light source; a beam-converging unit which intercrosses a bundle of the light beams emitted from the light-emitting elements onto a beam-conversion point; and an focusing unit disposed between the beam-converging unit and the photosensitive member, which images the light beams emitted from the plural of light-emitting elements and intercrossed by the beam-converging unit onto the photosensitive member.

Abstract: An apparatus for correcting positional deviation of the light source emitting light beams in an image recording apparatus is disclosed which corrects change of the image size (dimensions of the image) on the photosensitive member due to positional deviations of beam spots on the photosensitive member on account of physical distortions caused by external vibration, temperature change, and the like. Changes in the diameter of detective light beams are measured by photodetecting portions 5.sub.R and 5.sub.L and piezoelectric devices 6a and 6b are driven based on the results of the detection, whereby the semiconductor laser array 1 is moved so that the multiplication b/a for the image size may be kept constant.

Abstract: A semiconductor laser array driving method for driving a semiconductor laser array having a plurality of light-emitting points arranged on a base member. The semiconductor laser array driving method has a step of driving the plurality of light-emitting points by a driving pulse current of a pulse width and a duty factor meeting an inequality: .DELTA.T.sub.1 /.DELTA.T.sub.0 <1/2, where .DELTA.T.sub.0 is a temperature rise in active layers of the light-emitting points when the semiconductor laser array is driven in a continuous drive mode using a continuous current, and .DELTA.T.sub.1 is a temperature rise in the active layers of the light-emitting points when the semiconductor laser array is driven in a pulse drive mode using a pulse current. In the semiconductor laser array driving method, the plurality of light-emitting points are driven by a driving pulse current having a duty factor of 0.4 or below meeting an inequality: y<3.1 exp(-8.9x), where x is a duty factor and y is a pulse width (.mu.s).

Abstract: A semiconductor laser device in which semiconductor layers of an n-type cladding layer, a quantum well active layer 106, a p-type cladding layer, and an intermediate layer are formed on an n-type GaAs substrate in successive order, and a mixed-crystal is formed in a region except the semiconductor layers of the contact layer and the lower part of the contact layer by diffusing Si into the structure from above the intermediate layer, characterized in that the contact layer and the intermediate layer are made of n-type or nonconductive semiconductor material, and a p-type low-resistance region, formed by diffusing Zn into the structure from above the contact layer, is profiled so as not to overlap with the mixed-crystal region formed by Si diffusion.

Abstract: A semiconductor laser device in which semiconductor layers of an n-type cladding layer, a quantum well active layer 106, a p-type cladding layer, and an intermediate layer are formed on an n-type GaAs substrate in successive order, and a mixed-crystal is formed in a region except the semiconductor layers of the contact layer and the lower part of the contact layer by diffusing Si into the structure from above the intermediate layer, characterized in that the contact layer and the intermediate layer are made of n-type or nonconductive semiconductor material, and a p-type low-resistance region, formed by diffusing Zn into the structure from above the contact layer, is profiled so as not to overlap with the mixed-crystal region formed by Si diffusion.

Abstract: In a semiconductor laser array in which a semiconductor laser element having a horizontal-direction cavity, and plural outer inclined reflecting mirrors capable of reflecting laser light projected from the semiconductor laser element along a specific direction are integrated on a semiconductor substrate in a monolithic form, these outer inclined reflecting mirrors are positioned adjacent to each other, and also are arranged in such a manner that a distance between the adjoining horizontal-direction cavities becomes longer while being located apart from said outer inclined reflecting mirrors.