Abstract: There is provided a magnetoresistance effect element includes: a channel layer that extends in a first direction; a recording layer which includes a film formed from a ferromagnetic material, of which a magnetization state is changed to one of two or greater magnetization states, and which is formed on the channel layer; a non-magnetic layer that is provided on a surface of the recording layer; a reference layer which is provided on a surface of the non-magnetic layer, which includes a film formed from a ferromagnetic material, and of which a magnetization direction is fixed; a terminal pair that includes a first terminal and a second terminal which are electrically connected to the channel layer with an interval in the first direction, and to which a current pulse for bringing the recording layer to any one magnetization state with a plurality of pulses is input by flowing a current to the channel layer between the first terminal and the second terminal; and a third terminal that is electrically connected to

Abstract: A magnetoresistance effect element is provided, which can, even in a region where the element size of the magnetoresistance effect element is small, implement stable record holding at higher temperatures, and moreover which has higher thermal stability. The magnetoresistance effect element has a configuration including reference layer (B1)/first non-magnetic layer (1)/first magnetic layer (21)/first non magnetic insertion layer (31)/second magnetic layer (22). A magnetostatic coupling is established between the first magnetic layer (21) and the second magnetic layer (22) due to magnetostatic interaction becoming dominant.

Abstract: A data write circuit of a resistive memory element is provided, the device being capable of writing with low writing energy using a simple circuit. The data write circuit of the resistive memory element, includes: a complementary resistive memory element; writing means for making the complementary resistive memory element cause a resistance change; detection means for detecting a writing state in the complementary resistive memory element; and control means for controlling writing by the writing means, based on a detected signal of the detection means.

Abstract: Provided is an X-type 3-terminal STT-MRAM (spin orbital torque magnetization reversal component) having a high thermal stability index ? and a low writing current Ic in a balanced manner. A magnetoresistance effect element has a configuration of channel layer (1)/barrier layer non adjacent magnetic layer (2b)/barrier layer adjacent magnetic layer (2a)/barrier layer (3).

Abstract: A magnetic tunnel junction element includes, in a following stack order, an underlayer formed of a metal material, a fixed layer formed of a ferromagnetic body, a magnetic coupling layer formed of a nonmagnetic body, a reference layer formed of a ferromagnetic body, a barrier layer formed of a nonmagnetic body, and a recording layer formed of a ferromagnetic body, or alternatively, the magnetic tunnel junction element includes, in a following stack order, a recording layer formed of a ferromagnetic body, a barrier layer formed of a nonmagnetic body, a reference layer formed of a ferromagnetic body, a magnetic coupling layer formed of a nonmagnetic body, an underlayer formed of a metal material, and a fixed layer formed of a ferromagnetic body, wherein the fixed layer is formed and stacked after performing plasma treatment to a surface of the underlayer having been formed.

Abstract: A magnetoresistive element includes a reference layer having a fixed magnetization direction and including a ferromagnetic material containing Fe or Co, a recording layer having a variable magnetization direction and including a ferromagnetic material, and one non-magnetic layer that is formed between the reference layer and the recording layer and that contains oxygen. One of the reference layer and the recording layer contains Fe. The three layers are arranged so that a magnetization direction of the one of the reference layer and the recording layer becomes perpendicular to a layer surface by an interfacial perpendicular magnetic anisotropy at an interface between the one of the reference layer and the recording layer and the one non-magnetic layer resulting from the one of the reference layer and the recording layer having a predetermined thickness. The one of the reference layer and the recording layer has a bcc structure.

Abstract: A circuit design support system, a circuit design support method, a circuit design support program, and a recording medium having the program recorded thereon are provided by which a design can be performed in consideration of the stochastic operation of the stochastic operation element and the influence caused by the stochastic operation of the stochastic operation element on the operation reliability of the circuit can be evaluated.

Abstract: In reading of a memory unit, an read failure operation due to variation in characteristic of a transistor in a dynamic load is reduced. A read circuit that reads a voltage obtained by a voltage division of a dynamic load unit and the memory unit as an output of the memory unit includes the dynamic load unit having one end connected to a side of a power supply and the other end connected to a side of the memory unit, and a feedback unit that, by a feedback of the voltage obtained by the voltage division that is divided between the dynamic load unit and the memory unit, holds the voltage obtained by the voltage division. The dynamic load unit has an array structure in which a plurality of resistive memory elements are connected in series, in parallel, or in series-parallel. The dynamic load unit has the array structure of the resistive memory elements and this structure can suppress the read failure operation due to the variation in dynamic load.

Abstract: The magnetic memory element (100) includes: a conductive layer that includes a heavy metal layer (10) containing a 5d transition metal; a first ferromagnetic layer (20) that is adjacent to the conductive layer and contains a ferromagnetic layer having a reversible magnetization; a barrier layer (30) that is adjacent to the first ferromagnetic layer (20) and includes an insulating material; a reference layer (40) that is adjacent to the barrier layer (30) and has at least one second ferromagnetic layer (41) having a fixed magnetization direction; a cap layer (50) that is adjacent to the reference layer (40) and includes a conductive material; a first terminal (T1) that is capable of introducing a current into one end of the heavy metal layer (10) in the longitudinal direction; a second terminal (T2) that is capable of introducing a current into the other end of the heavy metal layer (10) in the longitudinal direction; and a third terminal (T3) that is capable of introducing a current into the cap layer (50).

Abstract: A memory circuit device includes multiple memory cells that are each constituted of a resistive memory element; a write circuit unit that is configured to write data to any one of the memory cells which is designated by cell designating information, and a read circuit unit that is configured to read out, from the memory cell designated by the cell designating information, data written in the memory cell. The memory circuit device has a configuration including a selection circuit unit that is shared by both of the write circuit unit and the read circuit unit and configured to select a memory cell to be activated from the multiple memory cells based on cell designating information, and a control circuit unit that is configured to selectively enable any one of writing of data by the write circuit unit and reading of data by the read circuit unit with respect to the memory cell selected by the selection circuit unit.

Abstract: A magnetic tunnel junction element configured by stacking, in a following stack order, a fixed layer formed of a ferromagnetic body and in which a magnetization direction is fixed, a magnetic coupling layer formed of a nonmagnetic body, a reference layer formed of a ferromagnetic body and in which the magnetization direction is fixed, a barrier layer formed of a nonmagnetic body, and a recording layer formed of a ferromagnetic body, a barrier layer formed of a nonmagnetic body, and a recording layer formed by sandwiching an insertion layer formed of a nonmagnetic body between first and second ferromagnetic layers, wherein the magnetic coupling layer is formed using a sputtering gas in which a value of a ratio in which a mass number of an element used in the magnetic coupling layer divided by the mass number of the sputtering gas itself is 2.2 or smaller.

Abstract: A magnetic material includes a structure in which a first magnetic layer 1 and a second magnetic layer 2 are stacked such that each layer is formed at least partially in a stacking direction by substantially one atomic layer. The first magnetic layer contains Co as a principal component. The second magnetic layer includes at least Ni. The magnetic material has magnetic anisotropy in the stacking direction. Preferably, an atomic arrangement within a film surface of the first magnetic layer and the second magnetic layer has six-fold symmetry.

Abstract: A data write device for a resistive memory element, the resistive memory element including: a conductive electrode provided at one end of the memory element; and a reading electrode provided at the other end of the memory element being configured to vary a resistance of the memory element by applying a write current to the conductive electrode, the data write device for the resistive memory element further includes: a writing means, an output means, and a control means. The output means is provided between a power supply and the reading electrode. As output signals, a read signal from the memory element and a monitor signal to monitor a writing status of the memory element written by the writing means are output from the output means. By the monitor signal, a termination of data-writing into the resistive memory element is detected.

Abstract: A magnetoresistance effect element includes first and second magnetic layers having a perpendicular magnetization direction, and a first non-magnetic layer disposed adjacent to the first magnetic layer and on a side opposite to a side on which the second magnetic layer is disposed. An interfacial perpendicular magnetic anisotropy exists at an interface between the first magnetic layer and the first non-magnetic layer, and the anisotropy causes the first magnetic layer to have a magnetization direction perpendicular to the surface of the layers. An atomic fraction of all magnetic elements to all magnetic and non-magnetic elements included in the second magnetic layer is smaller than that of the first magnetic layer.

Abstract: Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layers of the magneto resistive effect element are formed from a ferromagnetic material containing at least one type of 3d transition metal such that the magnetoresistance ratio is controlled, and the film thickness of the ferromagnetic layers is controlled on an atomic layer level such that the magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane.

Abstract: A method for producing a magnetic memory includes: forming a magnetic film having a non-magnetic layer between a first magnetic layer and a second magnetic layer on a substrate having an electrode layer; performing annealing treatment at a first treatment temperature in a state where a magnetic field is applied in a direction perpendicular to a film surface of the first or the second magnetic layer in vacuum; forming a magnetic tunnel junction element; forming a protective film protecting the magnetic tunnel junction element; a formation accompanied by thermal history, in which a constituent element of a magnetic memory is formed after the protective film formation on the substrate; and implementing annealing treatment at a second treatment temperature lower than the first treatment temperature on the substrate in an annealing treatment chamber, in vacuum or inert gas wherein no magnetic field is applied.

Abstract: A magnetoresistance effect element includes a bias layer comprised of an antiferromagnetic material and having a shape in which a first length in a first direction greater than a second length in a second direction perpendicular to the first direction, a recording layer comprised of a ferromagnetic material and being disposed on the bias layer, a direction of magnetization of the recording layer being reversible, a barrier layer comprised of an insulation material and being disposed on the recording layer, and a reference layer comprised of a ferromagnetic material and being disposed on the barrier layer, a direction of magnetization of the reference layer being substantially fixed.

Abstract: Provided is a magnetoresistance effect element in which the magnetization direction of the recording layer is perpendicular to the film surface and which has a high thermal stability factor ?, and a magnetic memory. A recording layer having a configuration of first magnetic layer/first non-magnetic coupling layer/first magnetic insertion layer/second non-magnetic coupling layer/second magnetic layer is sandwiched between the first and second non-magnetic layers and stacked so that a magnetic coupling force is generated between the first magnetic layer and the second magnetic layer.

Abstract: A data write circuit of a resistive memory element is provided, the device being capable of writing with low writing energy using a simple circuit. The data write circuit of the resistive memory element, includes: a complementary resistive memory element; writing means for making the complementary resistive memory element cause a resistance change; detection means for detecting a writing state in the complementary resistive memory element; and control means for controlling writing by the writing means, based on a detected signal of the detection means.

Abstract: A magnetic tunnel junction element with a high tunnel magnetic resistance ratio can prevent a recording layer from being damaged. A reference layer includes a ferromagnetic body, and has magnetization direction fixed in the vertical direction. A barrier layer includes non-magnetic body, and disposed on one surface side of the reference layer. A recording layer is disposed to sandwich barrier layer between itself and reference layer. The recording layer includes a first ferromagnetic layer including at least one of Co and Fe, and having a magnetization direction variable in a vertical direction; a first non-magnetic layer including at least one of Mg, MgO, C, Li, Al, and Si, second non-magnetic layer including at least one of Ta, Hf, W, Mo, Nb, Zr, Y, Sc, Ti, V, and Cr, and second ferromagnetic layer including at least one of Co and Fe, and having a magnetization direction variable in a vertical direction.