Abstract: The present invention provides a magnetoresistance effect element which has a high thermal stability factor ? and in which a magnetization direction of a recording layer is a perpendicular direction with respect to a film surface, and a magnetic memory including the same. Magnetic layers of a recording layer of the magnetoresistance effect element are divided into at least two, and an Fe composition with respect to a sum total of atomic fractions of magnetic elements in each magnetic layer is changed before stacking the magnetic layers.

Abstract: A method and a system for measuring the thermal stability factor of a magnetic tunnel junction device, a semiconductor integrated circuit, and a production management method for the semiconductor integrated circuit, capable of measuring the thermal stability factors of individual devices in a relatively short period of time and quickly performing quality control during material development and at a production site. A meter measures change in resistance value of an evaluation MTJ for a predetermined period while causing a predetermined current to flow into the evaluation MTJ maintained at a predetermined temperature. An analyzer calculates a time constant in which a low-resistance state is maintained and a time constant in which a high-resistance state is maintained from the measured change in resistance value. A thermal stability factor of the evaluation MTJ is calculated on the basis of the calculated time constants and the predetermined current flowing into the evaluation MTJ.

Abstract: Provided are a magnetoresistive element, a magnetic memory device, and a writing and reading method for a magnetic memory device, in which an aspect ratio of a junction portion can be decreased. A magnetoresistive element 1 of the invention, includes: a heavy metal layer 2 that is an epitaxial layer; and a junction portion 3 including a recording layer 31 that is provided on the heavy metal layer 2 and includes a ferromagnetic layer of an epitaxial layer magnetized in an in-plane direction, which is an epitaxial layer, a barrier layer 32 that is provided on the recording layer 31 and includes an insulating body, and a reference layer 33 that is provided on the barrier layer 32 and has magnetization fixed in the in-plane direction, in which the recording layer 31 is subjected to magnetization reversal by applying a write current to the heavy metal layer 2.

Abstract: An image processing apparatus includes a control unit configured to control execution of monochromatic calibration and multi-color calibration, and a registration unit configured to register paper types of paper to be used at time of execution of the monochromatic calibration, a monochromatic target value set for each of the paper types used for the monochromatic calibration, paper types of paper to be used at time of execution of multi-color calibration, and a multi-color target value set for each of the paper types used for the multi-color calibration. The image processing apparatus executes the multi-color calibration, after executing the monochromatic calibration, via the control unit by using paper of a paper type selected from common paper types out of the registered paper types and the monochromatic target value and the multi-color target value set for the selected paper type.

Abstract: Provided are a magnetoresistance effect element and a magnetic memory having a shape magnetic anisotropy and using a recording layer having an anti-parallel coupling. A first magnetic layer (3) and a second magnetic layer (5) of the magnetoresistance effect element include a ferromagnetic substance, have a magnetization direction variable to the direction perpendicular to a film surface and are magnetically coupled in an anti-parallel direction, and a junction size D (nm), which is a length of the longest straight line on an end face perpendicular to the thickness direction of the first magnetic layer (3) and the second magnetic layer (5), a film thickness t1 (nm) of the first magnetic layer (3), and a film thickness t2 (nm) of the second magnetic layer (5) satisfy relationships D<t1 and D?t1 or D?t1 and D<t2.

Abstract: A magnetoresistance effect element is provided, which can, even in a region where the element size of the magnetoresistance effect element is small, implement stable record holding at higher temperatures, and moreover which has higher thermal stability. The magnetoresistance effect element has a configuration including reference layer (B1)/first non-magnetic layer (1)/first magnetic layer (21)/first non-magnetic insertion layer (31)/second magnetic layer (22). A magnetostatic coupling is established between the first magnetic layer (21) and the second magnetic layer (22) due to magnetostatic interaction becoming dominant.

Abstract: A magnetoresistance effect element is provided, which can, even in a region where the element size of the magnetoresistance effect element is small, implement stable record holding at higher temperatures, and moreover which has higher thermal stability. The magnetoresistance effect element has a configuration including reference layer (B1)/first non-magnetic layer (1)/first magnetic layer (21)/first non magnetic insertion layer (31)/second magnetic layer (22). A magnetostatic coupling is established between the first magnetic layer (21) and the second magnetic layer (22) due to magnetostatic interaction becoming dominant.

Abstract: [Problem] Provided are a magnetic memory element in which an improvement in properties, such as an improvement in coercive properties or a reduction in a leak current, can be attained, a method for producing the same, and a magnetic memory. [Means for Resolution] The magnetic memory element, includes: a columnar stack ST in which a reference layer FX having a fixed magnetization direction, a barrier layer TL including a non-magnetic body, and a recording layer FR having a reversible magnetization direction are stacked in this order; and an insulating film (a second insulating film 20) which contains nitrogen and is provided to cover a lateral surface of the columnar stack, in which in one or both of the recording layer and the barrier layer, a nitrogen concentration is 7×1030 atoms/m2 or more in a position of 2 nm inside from an outer circumferential end of the columnar stack.

Abstract: A biometrics authentication system having a small and simple configuration and being capable of implementing both of biometrics authentication and position detection is provided. A biometrics authentication system includes a light source emitting light to an object, a microlens array section condensing light from the object, a light-sensing device obtaining light detection data of the object on the basis of the light condensed by the microlens array section, a position detection section detecting the position of the object on the basis of the light detection data obtained in the light-sensing device, and an authentication section, in the case where the object is a living body, performing authentication of the living body on the basis of the light detection data obtained in the light-sensing device.

Abstract: A perpendicular magnetization type three-terminal SOT-MRAM that does not need an external magnetic field is provided. A magnetoresistance effect element where a first magnetic layer/nonmagnetic spacer layer/recording layer are disposed in order, and the first magnetic layer and the nonmagnetic spacer layer are provided to a channel layer.

Abstract: Provided are a magnetic tunnel junction dement suppressing diffusion and penetration of constituent elements between a hard mask film, and a magnetic tunnel junction film and a protection layer, and a method for manufacturing the magnetic tunnel junction element. The magnetic tunnel junction element has a configuration in which a non-magnetic insertion layer (7) including Ta or the like is inserted beneath a hard mask layer (8).

Abstract: Provided is an X-type 3-terminal STT-MRAM (spin orbital torque magnetization reversal component) having a high thermal stability index ? and a low writing current Ic in a balanced manner. A magnetoresistance effect element has a configuration of channel layer (1)/barrier layer non adjacent magnetic layer (2b)/barrier layer adjacent magnetic layer (2a)/barrier layer (3).

Abstract: A magnetic tunnel junction element includes, in a following stack order, an underlayer formed of a metal material, a fixed layer formed of a ferromagnetic body, a magnetic coupling layer formed of a nonmagnetic body, a reference layer formed of a ferromagnetic body, a barrier layer formed of a nonmagnetic body, and a recording layer formed of a ferromagnetic body, or alternatively, the magnetic tunnel junction element includes, in a following stack order, a recording layer formed of a ferromagnetic body, a barrier layer formed of a nonmagnetic body, a reference layer formed of a ferromagnetic body, a magnetic coupling layer formed of a nonmagnetic body, an underlayer formed of a metal material, and a fixed layer formed of a ferromagnetic body, wherein the fixed layer is formed and stacked after performing plasma treatment to a surface of the underlayer having been formed.

Abstract: An object of the invention is to provide a magnetoresistance effect element which includes a reference layer having three or more magnetic layers and which improves a thermal stability factor ? by decreasing a write error rate using an element structure that enables a wide margin to be secured between a current at which magnetization of the reference layer is reversed and a writing current Ic of a recording layer and by reducing an effect of a stray magnetic field from the reference layer. The magnetoresistance effect element includes: a first recording layer (A1); a first non-magnetic layer (11); and a first reference layer (B1), wherein the first reference layer (B1) including n-number of a plurality of magnetic layers (21, 22, . . . , 2n) and (n-1)-number of a plurality of non-magnetic insertion layers (31, 32, . . . 3(n-1)) adjacently sandwiched by each of the plurality of magnetic layers, where n?3.

Abstract: A gate scanning unit circuit is applied in a display panel including a number of gate lines and a driver configured to output clock signals. The gate scanning unit circuit is configured to scan the number of gate lines. The gate scanning unit circuit includes a flip-flop and at least two output units. The flip-flop is configured to output a trigger signal. Each output unit is connected to the flip-flop and the driver. Each of the at least two output units is connected to the number of gate lines one-to-one. The output unit is configured to output a gate scan signal to the corresponding connected gate line according to the trigger signal and the clock signals.

Abstract: A magnetic tunnel junction element configured by stacking, in a following stack order, a fixed layer formed of a ferromagnetic body and in which a magnetization direction is fixed, a magnetic coupling layer formed of a nonmagnetic body, a reference layer formed of a ferromagnetic body and in which the magnetization direction is fixed, a barrier layer formed of a nonmagnetic body, and a recording layer formed of a ferromagnetic body, a barrier layer formed of a nonmagnetic body, and a recording layer formed by sandwiching an insertion layer formed of a nonmagnetic body between first and second ferromagnetic layers, wherein the magnetic coupling layer is formed using a sputtering gas in which a value of a ratio in which a mass number of an element used in the magnetic coupling layer divided by the mass number of the sputtering gas itself is 2.2 or smaller.

Abstract: A magnetic material includes a structure in which a first magnetic layer 1 and a second magnetic layer 2 are stacked such that each layer is formed at least partially in a stacking direction by substantially one atomic layer. The first magnetic layer contains Co as a principal component. The second magnetic layer includes at least Ni. The magnetic material has magnetic anisotropy in the stacking direction. Preferably, an atomic arrangement within a film surface of the first magnetic layer and the second magnetic layer has six-fold symmetry.

Abstract: A magnetoresistance effect element includes first and second magnetic layers having a perpendicular magnetization direction, and a first non-magnetic layer disposed adjacent to the first magnetic layer and on a side opposite to a side on which the second magnetic layer is disposed. An interfacial perpendicular magnetic anisotropy exists at an interface between the first magnetic layer and the first non-magnetic layer, and the anisotropy causes the first magnetic layer to have a magnetization direction perpendicular to the surface of the layers. An atomic fraction of all magnetic elements to all magnetic and non-magnetic elements included in the second magnetic layer is smaller than that of the first magnetic layer.

Abstract: A method for producing a magnetic memory includes: forming a magnetic film having a non-magnetic layer between a first magnetic layer and a second magnetic layer on a substrate having an electrode layer; performing annealing treatment at a first treatment temperature in a state where a magnetic field is applied in a direction perpendicular to a film surface of the first or the second magnetic layer in vacuum; forming a magnetic tunnel junction element; forming a protective film protecting the magnetic tunnel junction element; a formation accompanied by thermal history, in which a constituent element of a magnetic memory is formed after the protective film formation on the substrate; and implementing annealing treatment at a second treatment temperature lower than the first treatment temperature on the substrate in an annealing treatment chamber, in vacuum or inert gas wherein no magnetic field is applied.

Abstract: Provided is a carbonizing furnace capable of improving combustion efficiency of combustible gas generated by combustion of organic waste and of improving carbonization efficiency of organic waste by appropriately controlling the temperature of carbide. Provided is a pyrolytic furnace in which heating gas can be suppressed from outflowing to the outside from a gap between the upper surface of the body part of the pyrolytic furnace and the outer circumferential surface of a reaction tube where a pyrolysis reaction between carbide and a gasification agent is caused, and in which the temperature of a region where the pyrolysis reaction is caused can be suppressed from being reduced. Provided is a water gas generation system which improves thermal efficiency without using a dedicated heat source for generating water steam to be used as a gasification agent for carbide, promotes a pyrolysis reaction, and thereby, achieves the excellent heat efficiency.