Abstract: A magnetic tunnel junction element configured by stacking, in a following stack order, a fixed layer formed of a ferromagnetic body and in which a magnetization direction is fixed, a magnetic coupling layer formed of a nonmagnetic body, a reference layer formed of a ferromagnetic body and in which the magnetization direction is fixed, a barrier layer formed of a nonmagnetic body, and a recording layer formed of a ferromagnetic body, a barrier layer formed of a nonmagnetic body, and a recording layer formed by sandwiching an insertion layer formed of a nonmagnetic body between first and second ferromagnetic layers, wherein the magnetic coupling layer is formed using a sputtering gas in which a value of a ratio in which a mass number of an element used in the magnetic coupling layer divided by the mass number of the sputtering gas itself is 2.2 or smaller.

Abstract: A magnetic material includes a structure in which a first magnetic layer 1 and a second magnetic layer 2 are stacked such that each layer is formed at least partially in a stacking direction by substantially one atomic layer. The first magnetic layer contains Co as a principal component. The second magnetic layer includes at least Ni. The magnetic material has magnetic anisotropy in the stacking direction. Preferably, an atomic arrangement within a film surface of the first magnetic layer and the second magnetic layer has six-fold symmetry.

Abstract: A magnetoresistance effect element includes first and second magnetic layers having a perpendicular magnetization direction, and a first non-magnetic layer disposed adjacent to the first magnetic layer and on a side opposite to a side on which the second magnetic layer is disposed. An interfacial perpendicular magnetic anisotropy exists at an interface between the first magnetic layer and the first non-magnetic layer, and the anisotropy causes the first magnetic layer to have a magnetization direction perpendicular to the surface of the layers. An atomic fraction of all magnetic elements to all magnetic and non-magnetic elements included in the second magnetic layer is smaller than that of the first magnetic layer.

Abstract: A method for producing a magnetic memory includes: forming a magnetic film having a non-magnetic layer between a first magnetic layer and a second magnetic layer on a substrate having an electrode layer; performing annealing treatment at a first treatment temperature in a state where a magnetic field is applied in a direction perpendicular to a film surface of the first or the second magnetic layer in vacuum; forming a magnetic tunnel junction element; forming a protective film protecting the magnetic tunnel junction element; a formation accompanied by thermal history, in which a constituent element of a magnetic memory is formed after the protective film formation on the substrate; and implementing annealing treatment at a second treatment temperature lower than the first treatment temperature on the substrate in an annealing treatment chamber, in vacuum or inert gas wherein no magnetic field is applied.

Abstract: Provided is a carbonizing furnace capable of improving combustion efficiency of combustible gas generated by combustion of organic waste and of improving carbonization efficiency of organic waste by appropriately controlling the temperature of carbide. Provided is a pyrolytic furnace in which heating gas can be suppressed from outflowing to the outside from a gap between the upper surface of the body part of the pyrolytic furnace and the outer circumferential surface of a reaction tube where a pyrolysis reaction between carbide and a gasification agent is caused, and in which the temperature of a region where the pyrolysis reaction is caused can be suppressed from being reduced. Provided is a water gas generation system which improves thermal efficiency without using a dedicated heat source for generating water steam to be used as a gasification agent for carbide, promotes a pyrolysis reaction, and thereby, achieves the excellent heat efficiency.

Abstract: Provided is a magnetoresistance effect element in which the magnetization direction of the recording layer is perpendicular to the film surface and which has a high thermal stability factor ?, and a magnetic memory. A recording layer having a configuration of first magnetic layer/first non-magnetic coupling layer/first magnetic insertion layer/second non-magnetic coupling layer/second magnetic layer is sandwiched between the first and second non-magnetic layers and stacked so that a magnetic coupling force is generated between the first magnetic layer and the second magnetic layer.

Abstract: A magnetic tunnel junction element with a high tunnel magnetic resistance ratio can prevent a recording layer from being damaged. A reference layer includes a ferromagnetic body, and has magnetization direction fixed in the vertical direction. A barrier layer includes non-magnetic body, and disposed on one surface side of the reference layer. A recording layer is disposed to sandwich barrier layer between itself and reference layer. The recording layer includes a first ferromagnetic layer including at least one of Co and Fe, and having a magnetization direction variable in a vertical direction; a first non-magnetic layer including at least one of Mg, MgO, C, Li, Al, and Si, second non-magnetic layer including at least one of Ta, Hf, W, Mo, Nb, Zr, Y, Sc, Ti, V, and Cr, and second ferromagnetic layer including at least one of Co and Fe, and having a magnetization direction variable in a vertical direction.

Abstract: [Object] To measure a form of light scattering in a body more simply. [Solution] A measurement device according to the present disclosure includes: a light source configured to emit at least one kind of measurement light belonging to a predetermined wavelength band toward a measurement region formed by at least a part of a living body; a detection unit configured such that a plurality of sensors are arranged regularly in a predetermined disposition and the measurement light emitted from the light source and transmitted through the living body is detected by the plurality of sensors; and an analysis unit configured to analyze at least one of rectilinearity of the measurement light in the living body and an optical distance from the light source using a detection result of the measurement light detected by the detection unit.

Abstract: The present invention provides a magnetoresistance effect element which has a high thermal stability factor ? and in which a magnetization direction of a recording layer is a perpendicular direction with respect to a film surface, and a magnetic memory including the same. Magnetic layers of a recording layer of the magnetoresistance effect element are divided into at least two, and an Fe composition with respect to a sum total of atomic fractions of magnetic elements in each magnetic layer is changed before stacking the magnetic layers.

Abstract: [Object] To more simply measure a scattering coefficient of an in-vivo component at any measurement location of a living body. [Solution] A measurement device according to the present disclosure includes: a light source configured to emit at least one kind of measurement light belonging to a predetermined wavelength band toward a measurement region formed by at least a part of a living body; a detection unit in which a plurality of sensors are arranged regularly in a predetermined disposition, the detection unit being provided on a same side as the light source with respect to the measurement region and configured to detect reflected light from the living body of the measurement light transmitted through a part of the living body with the plurality of sensors; and an analysis unit configured to analyze scattering characteristics of an in-vivo component present in the living body using a detection result of the reflected light detected by the detection unit.

Abstract: A shift register operates in a display period and a touch period in turn. The shift register circuit comprises a plurality of shift register units. Each shift register unit generates a pulse signal to a gate line, a following adjacent shift register unit, and an anterior adjacent shift register unit. Each shift register unit comprises a flip-flop (FF) circuit and an output circuit. The FF circuit controls potentials of an internal terminal and an internal inverted terminal based on a received a setting signal and a received reset signal. The output circuit generates the pulse signal related to a clock signal under a control of the internal terminal and the received internal inverted terminal. During the touch period, the potential of the internal terminal and the potential of the internal inverted terminal remain the same as the potential in the anterior display period.

Abstract: An image processing apparatus determines whether each of pixels in a scanned image is a color pixel or a monochrome pixel, determines whether each of blocks including the multiple pixels in the scanned image is a color block or a monochrome block, based on determination results of the respective pixels, and determines that the scanned image is a color image in a case where an arrangement pattern of blocks determined to be color blocks matches a predetermined pattern.

Abstract: A magnetic tunnel junction element with a high MR ratio, and can prevent a recording layer from being damaged, and magnetic memory. A reference layer includes a ferromagnetic body, and has magnetization direction fixed in the vertical direction. A barrier layer includes non-magnetic body, and disposed on one surface side of the reference layer. A recording layer is disposed to sandwich barrier layer between itself and reference layer. The recording layer includes a first ferromagnetic layer including at least one of Co and Fe, and having a magnetization direction variable in vertical direction; a first non-magnetic layer including at least one of Mg, MgO, C, Li, Al, and Si, second non-magnetic layer including at least one of Ta, Hf, W, Mo, Nb, Zr, Y, Sc, Ti, V, and Cr, and second ferromagnetic layer including at least one of Co and Fe, and having a magnetization direction variable in vertical direction.

Abstract: A spintronics element including a ferromagnetic layer containing boron, and a diffusion stopper film covering a side face of the ferromagnetic layer partially or entirely, the side face in direct contact with diffusion stopper film, so as to prevent out-diffusion of the boron contained in the ferromagnetic layer. The diffusion stopper film contains boron at a concentration higher than a concentration of the boron in a portion of the ferromagnetic layer where the ferromagnetic layer contacts the diffusion stopper film.

Abstract: A gate signal line driving circuit includes plural basic circuits, each outputting to a gate signal line a gate signal which is high during a high signal period and low during a low signal period. Each of the basic circuits includes: agate line high voltage application circuit which is turned on in accordance with the high signal period to apply the high voltage to the gate signal line; a gate line low voltage application circuit which is turned on in accordance with the low signal period to apply the low voltage to the gate signal line; and a second gate line low voltage application circuit which is turned on to apply the low voltage to the gate signal line in at least a part of a period between turning off the gate line high voltage application circuit and turning on the gate line low voltage application circuit.

Abstract: A magnetic tunnel junction element configured by stacking, in a following stack order, a fixed layer formed of a ferromagnetic body and in which a magnetization direction is fixed, a magnetic coupling layer formed of a nonmagnetic body, a reference layer formed of a ferromagnetic body and in which the magnetization direction is fixed, a barrier layer formed of a nonmagnetic body, and a recording layer formed of a ferromagnetic body, a barrier layer formed of a nonmagnetic body, and a recording layer formed by sandwiching an insertion layer formed of a nonmagnetic body between first and second ferromagnetic layers, wherein the magnetic coupling layer is formed using a sputtering gas in which a value of a ratio in which a mass number of an element used in the magnetic coupling layer divided by the mass number of the sputtering gas itself is 2.2 or smaller.

Abstract: A method and a system for measuring the thermal stability factor of a magnetic tunnel junction device, a semiconductor integrated circuit, and a production management method for the semiconductor integrated circuit, capable of measuring the thermal stability factors of individual devices in a relatively short period of time and quickly performing quality control during material development and at a production site. A meter measures change in resistance value of an evaluation MTJ for a predetermined period while causing a predetermined current to flow into the evaluation MTJ maintained at a predetermined temperature. An analyzer calculates a time constant in which a low-resistance state is maintained and a time constant in which a high-resistance state is maintained from the measured change in resistance value. A thermal stability factor of the evaluation MTJ is calculated on the basis of the calculated time constants and the predetermined current flowing into the evaluation MTJ.

Abstract: A method for producing a magnetic memory includes: forming a magnetic film having a non-magnetic layer between a first magnetic layer and a second magnetic layer on a substrate having an electrode layer; performing annealing treatment at a first treatment temperature in a state where a magnetic field is applied in a direction perpendicular to a film surface of the first or the second magnetic layer in vacuum; forming a magnetic tunnel junction element; forming a protective film protecting the magnetic tunnel junction element; a formation accompanied by thermal history, in which a constituent element of a magnetic memory is formed after the protective film formation on the substrate; and implementing annealing treatment at a second treatment temperature lower than the first treatment temperature on the substrate in an annealing treatment chamber, in vacuum or inert gas wherein no magnetic field is applied.

Abstract: A high-strength seamless stainless steel pipe for oil country tubular goods that is excellent in terms of hot workability, sulfide stress cracking resistance, and corrosion resistance, and a method for manufacturing the steel pipe. The steel pipe has a chemical composition containing Cr and Ni so that the relationship Cr/Ni?5.3 is satisfied. A microstructure of the steel pipe includes mainly a tempered martensite phase. Additionally, a surface layer microstructure of the steel pipe includes a phase which looks white when subjected to etching with a Vilella etching solution, the phase having a thickness in the wall thickness direction from the outer surface of the pipe of 10 ?m or more and 100 ?m or less and dispersing in the outer surface of the pipe in an amount of 50% or more in terms of area fraction.

Abstract: A magnetic tunnel junction element includes, in a following stack order, an underlayer formed of a metal material, a fixed layer formed of a ferromagnetic body, a magnetic coupling layer formed of a nonmagnetic body, a reference layer formed of a ferromagnetic body, a barrier layer formed of a nonmagnetic body, and a recording layer formed of a ferromagnetic body, or alternatively, the magnetic tunnel junction element includes, in a following stack order, a recording layer formed of a ferromagnetic body, a barrier layer formed of a nonmagnetic body, a reference layer formed of a ferromagnetic body, a magnetic coupling layer formed of a nonmagnetic body, an underlayer formed of a metal material, and a fixed layer formed of a ferromagnetic body, wherein the fixed layer is formed and stacked after performing plasma treatment to a surface of the underlayer having been formed.