Abstract: In an optical movement information detector, light emitted from a laser diode (1) is split into a first beam (10), a second beam (11) and a third beam (12) by beam splitters (2a, 2b). The first, second and third beams are converged by a condenser lens (4) upon a surface of an object to be measured (5) to form a beam spot (13) thereon. Diffused light from the beam spot (13) is received by a photodiode (6) and an output signal of the photodiode (6) is processed by a signal processing circuit (20) including an analog-digital converter (8) and a Fourier transforming unit (9). A detecting section (21) obtains, for example, a moving velocity and a moving direction of the object based on spectrum peak frequencies obtained by the Fourier transform.

Abstract: A light receiving device includes a silicon substrate, a first P type diffusion layer on the silicon substrate, and a P type semiconductor layer on the P type diffusion layer. On a surface part of the P type semiconductor layer, two N type diffusion layers as light receiving parts, and a second P type diffusion layer between the two N type diffusion layers are provided. On the P type semiconductor layer, an antireflection film structure composed of a first silicon oxide formed by thermal oxidation and a second silicon oxide formed by CVD is provided. A film thickness of the first silicon oxide is set at about 15 nm, thus a defect in a interface between the first silicon oxide and the P type semiconductor layer is prevented. A film thickness of the second silicon oxide is set at about 100 nm, thus a leak current between cathodes is prevented when a power supply voltage is applied for long period of time.

Abstract: In an optical distance measuring apparatus, a transmitter has a light-emitting device emitting an optical signal synchronized with a modulating signal having a predetermined repetition frequency, and a modulating signal generator outputting the modulating signal to the light-emitting device. A receiver has a photodetector receiving an optical beam reflected by an object to be measured and converting it to an electrical signal, a switch receiving the signal from the modulating signal generator and alternately choosing two channels for the electrical signal with a predetermined timing, and first and second storage sections storing electrical signals on the two channels. A signal processing section has a differential operation section performing a differential operation on electrical signals stored in the first and second storage sections, and a distance determining section determining a distance to the object on the basis of the result of the differential operation of the differential operation section.

Abstract: A first luminous flux emitted from the front end face of a LD is reflected by a mirror to be made incident on a detection point on the surface of a measuring object, and a second luminous flux emitted from the rear end face of the LD is reflected by another mirror to be made incident on the detection point. Scattered light from the first detection point is received in a photodiode. A signal processing circuit part calculates the frequency shift quantity of the scattered light based on output from the photodiode. As a result, a velocimeter is provided which detects the moving speed of a measuring object highly precisely.

Abstract: In an area of a diaphragm 5 as an infrared photosensitive portion of a thermal infrared detector, a fourth dielectric protective film 8c is etched and reduced in thickness to form a fifth dielectric protective film 8d so that the thickness of the diaphragm 5 as a whole is reduced. With this structure, the thermal capacity of the diaphragm 5 is decreased and the thermal time constant is reduced. This enables the thermal infrared detector to be operated at a high frame rate. A bolometer thin film 7 is formed throughout an entire surface of the diaphragm 5.

Abstract: In the color information measuring device, the print object information measuring device, the printing device and the electronic equipment, three light fluxes of mutually different wavelengths applied to a measurement object from a red LED, a green LED and a blue LED of a light-emitting part have a common illumination area on the measurement object. The common illumination area on the measurement object contains such an observation area on the measurement object that a reflected ray is made to be incident on a photodiode via a condenser lens and a slit member. Therefore, the common illumination area in which three light fluxes of different wavelengths overlap with one another can reliably be made to be an observation area, so that intensities of a plurality of reflected rays of different wavelengths derived from the observation area can be observed equivalently, hence an improved measurement accuracy.

Abstract: Two different phase components obtained by splitting interference light of light from an object by a diffraction grating are guided to first and second PD's by a second optical system. A first signal is outputted from a first signal processing circuit section that receives light reception signal from first PD, and a second signal is outputted from a second signal processing circuit section that receives a light reception signal from the second PD. A third signal of an interference light signal whose noise component is removed is outputted by a third signal processing circuit section using the first signal and the second signal. Then, the frequency of the third signal is detected, and the movement velocity of the object is detected by a movement velocity detection section on the basis of the frequency.

Abstract: An object of the present invention is to increase efficiency in review work by appropriately narrowing down review work that verifies shapes of visual defects relating to an enormous amount of defects detected by a visual inspecting apparatus with high sensitivity. In order to appropriately extract defect information from an inspecting apparatus, a filter function and a sampling function are prepared by unitizing the functions. As a result, defects as review targets are narrowed down and extracted automatically using the filter function and the sampling function in combination. In addition, sequencing the filter conditions and the sampling conditions and registering the sequence enables automatic filtering and sampling on the basis of information on a wafer as a review target, and thereby only defect information on the review target is extracted.

Abstract: The optical object discriminating device includes a light projecting part which applies light, which is emitted from a semiconductor light emitting element, to a measuring object which is an object to be measured, and a light receiving part which receives reflected light reflected by the measuring object. Between the light receiving part and the measuring object is placed a polarization-state selector part which permits polarized light of a specified polarization direction to pass therethrough. A signal processing part processes a signal outputted by the light receiving part, and measures intensity of light of the polarization direction permitted by the polarization-state selector part to pass therethrough.

Abstract: Two different phase components obtained by splitting interference light of light from an object by a diffraction grating are guided to first and second PD's by a second optical system. A first signal is outputted from a first signal processing circuit section that receives light reception signal from first PD, and a second signal is outputted from a second signal processing circuit section that receives a light reception signal from the second PD. A third signal of an interference light signal whose noise component is removed is outputted by a third signal processing circuit section using the first signal and the second signal. Then, the frequency of the third signal is detected, and the movement velocity of the object is detected by a movement velocity detection section on the basis of the frequency.

Abstract: In an optical movement information detector, light emitted from a laser diode (1) is split into a first beam (10), a second beam (11) and a third beam (12) by beam splitters (2a, 2b). The first, second and third beams are converged by a condenser lens (4) upon a surface of an object to be measured (5) to form a beam spot (13) thereon. Diffused light from the beam spot (13) is received by a photodiode (6) and an output signal of the photodiode (6) is processed by a signal processing circuit (20) including an analog-digital converter (8) and a Fourier transforming unit (9). A detecting section (21) obtains, for example, a moving velocity and a moving direction of the object based on spectrum peak frequencies obtained by the Fourier transform.

Abstract: A light receiving device includes a silicon substrate, a first P type diffusion layer on the silicon substrate, and a P type semiconductor layer on the P type diffusion layer. On a surface part of the P type semiconductor layer, two N type diffusion layers as light receiving parts, and a second P type diffusion layer between the two N type diffusion layers are provided. On the P type semiconductor layer, an antireflection film structure composed of a first silicon oxide formed by thermal oxidation and a second silicon oxide formed by CVD is provided. A film thickness of the first silicon oxide is set at about 15 nm, thus a defect in a interface between the first silicon oxide and the P type semiconductor layer is prevented. A film thickness of the second silicon oxide is set at about 100 nm, thus a leak current between cathodes is prevented when a power supply voltage is applied for long period of time.

Abstract: A photodiode includes a first conductivity type semiconductor substrate or a first conductivity type semiconductor layer; a second conductivity type semiconductor layer provided on the first conductivity type semiconductor substrate or the first conductivity type semiconductor layer; an anti-reflection film provided on a surface of a portion of the second conductivity type semiconductor layer which is in a light receiving area; a first conductive layer provided in an area in the vicinity of the light receiving area; and a passivation layer provided on the first conductive layer. Light incident on the photodiode is detected by a junction of the one of the first conductivity type semiconductor substrate and the first conductivity type semiconductor layer, and the second conductivity type semiconductor layer. The area in the vicinity of the light receiving area includes a window area having an opening in the passivation layer for partially exposing the first conductive layer.

Abstract: There is provided an optical velocimeter for achieving miniaturization and lower power consumption thereof and for accurately detecting two-dimensional travel velocity of a measured object. This optical velocimeter includes a light-emitting element, a diffraction grating, two light-receiving sections, and a signal processing circuit. Light emitted from the light-emitting element is branched by the diffraction grating into three light fluxes, and optical axes of the divided light fluxes are intersected one another on the measured object to form one detection point. Scattered light from the detection point frequency-shifted by travel of the measured object is then received by the two light-receiving sections, and a light-reception signals outputted from the light-receiving sections are processed in the signal processing circuit to detect travel velocities of two directions of the measured object.

Abstract: A first P-type diffusion layer and a P-type semiconductor layer are provided on a silicon substrate, and two N-type diffusion layers are provided on a front surface of this P-type semiconductor layer to form two light receiving units. Three-layer translucent films, a first silicon oxide film, a silicon nitride film, and a second silicon oxide film are disposed on the N-type diffusion layers and on the P-type semiconductor layer between the two diffusion layers. Holes produced during a production process and distributed and captured in two interfaces between the three-layer translucent films can reduce a field intensity in the vicinity of the surface of the P-type semiconductor layer to below a conventional level and an inversion of a conductive type to reduce a leak current between the light receiving units accordingly.

Abstract: A first luminous flux emitted from the front end face of a LD is reflected by a mirror to be made incident on a detection point on the surface of a measuring object, and a second luminous flux emitted from the rear end face of the LD is reflected by another mirror to be made incident on the detection point. Scattered light from the first detection point is received in a photodiode. A signal processing circuit part calculates the frequency shift quantity of the scattered light based on output from the photodiode. As a result, a velocimeter is provided which detects the moving speed of a measuring object highly precisely.

Abstract: A light receiving device includes a P type diffusion layer (101), a P type semiconductor layer (102), an N type diffusion layer (103) serving as a light receiving part, and a light transmitting film (104), all formed on a p type silicon substrate (100). The N type diffusion layer (103) has a thickness of 0.8 ?m to 1.0 ?m which is larger than an absorption length of incident light having wavelength of 400 nm, and such a concentration profile that a impurity concentration is not higher than 1E19 cm?3 on a surface and has a peak in a vicinity of the surface. Since recombination of carriers generated by the incident light is prevented in the vicinity of the surface of the N type diffusion layer (103), sensitivity of the light receiving device is enhanced and response speed is increased by the low-resistance N type diffusion layer (103) having a larger junction depth.

Abstract: In an area of a diaphragm 5 as an infrared photosensitive portion of a thermal infrared detector, a fourth dielectric protective film 8c is etched and reduced in thickness to form a fifth dielectric protective film 8d so that the thickness of the diaphragm 5 as a whole is reduced. With this structure, the thermal capacity of the diaphragm 5 is decreased and the thermal time constant is reduced. This enables the thermal infrared detector to be operated at a high frame rate. A bolometer thin film 7 is formed throughout an entire surface of the diaphragm 5.

Abstract: An object of the present invention is to increase efficiency in review work by appropriately narrowing down review work that verifies shapes of visual defects relating to an enormous amount of defects detected by a visual inspecting apparatus with high sensitivity. In order to appropriately extract defect information from an inspecting apparatus, a filter function and a sampling function are prepared by unitizing the functions. As a result, defects as review targets are narrowed down and extracted automatically using the filter function and the sampling function in combination. In addition, sequencing the filter conditions and the sampling conditions and registering the sequence enables automatic filtering and sampling on the basis of information on a wafer as a review target, and thereby only defect information on the review target is extracted.

Abstract: A photodiode includes a first conductivity type semiconductor substrate or a first conductivity type semiconductor layer; a second conductivity type semiconductor layer provided on the first conductivity type semiconductor substrate or the first conductivity type semiconductor layer; an anti-reflection film provided on a surface of a portion of the second conductivity type semiconductor layer which is in a light receiving area; a first conductive layer provided in an area in the vicinity of the light receiving area; and a passivation layer provided on the first conductive layer. Light incident on the photodiode is detected by a junction of the one of the first conductivity type semiconductor substrate and the first conductivity type semiconductor layer, and the second conductivity type semiconductor layer. The area in the vicinity of the light receiving area includes a window area having an opening in the passivation layer for partially exposing the first conductive layer.