Patents by Inventor Hideomi Koinuma
Hideomi Koinuma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9157144Abstract: It comprises a mask (11) having a first, a second and a third action edge (11a, 11b, 11c), and a drive means for moving the mask (11) relative to a substrate (12) in a uniaxial direction (A) whereby moving the mask at a fixed rate of movement to cause the edges to successively act on an identical substrate region while successively applying different materials thereto forms thin films of three components successively with respective film thickness gradients oriented in three different directions mutually angularly spaced apart by an angle of 120° to allow these films to overlap, thereby forming a ternary phase diagrammatic thin film 13.Type: GrantFiled: January 5, 2010Date of Patent: October 13, 2015Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCYInventors: Hideomi Koinuma, Yukio Yamamoto, Yuji Matsumoto, Ryota Takahashi
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Patent number: 8377211Abstract: Disclosed is a device for vacuum processing that performs vapor-deposition on a substrate being heated in a vacuum chamber; the device, wherein the chamber has a light transmissible window formed in a section of the chamber; the light transmissible window and a holding part holding the substrate are connected by a linear space isolated from other parts in the chamber; a laser emitter is installed outside the light transmissible window; and the laser emitter emits a laser beam to the substrate through the linear space, thereby heating the substrate. This device enables laser heating, eliminating conventional drawbacks such as a decrease in laser output.Type: GrantFiled: February 1, 2007Date of Patent: February 19, 2013Assignee: National Institute for Materials ScienceInventors: Masatomo Sumiya, Mikk Lippmaa, Tsuyoshi Ohnishi, Eiji Fujimoto, Hideomi Koinuma
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Publication number: 20120067410Abstract: A Schottky-barrier junction element 1 has a Schottky-barrier junction between an organic semiconductor 3 and an organic conductor 4. The inorganic semiconductor 3 is any one of nitride semiconductors, Si, GaAs, CdS, CdTe, CuInGaSe, InSb, PbTe, PbS, Ge, InN, GaSb, and SiC. A solar cell uses this Schottky-barrier junction element 1, with its photoelectric conversion section including the Schottky junction. A photoelectric conversion element uses this Schottky-barrier junction element 1, with its conversion section for interconverting light and electricity including the Schottky junction.Type: ApplicationFiled: March 29, 2010Publication date: March 22, 2012Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCEInventors: Nobuyuki Matsuki, Yoshihiro Irokawa, Kenji Itaka, Hideomi Koinuma, Masatomo Sumiya
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Patent number: 7911927Abstract: A Bi4Ti3O12 nanoplate, an array of such Bi4Ti3O12 nanoplate and their making methods as well as their applications are provided. Using a vapor phase growth method, a flux layer of VOx is deposited on a SrTiO3 (001) faced substrate and then Bi4Ti3O12 is deposited on the flux layer. A Bi4Ti3O12 single crystal nanoplate is formed standing up on the flux layer in the form of a rectangular solid whose independent three sides are crystallographically oriented in directions coincident with particular crystallographic directions of the single crystal substrate, respectively. The nanoplates as a nanostructure grown by the bottom-up method are substantially fixed in shape and are densely arrayed not in contact with one another, and are applicable to a low-cost ferroelectric memory and the like.Type: GrantFiled: August 1, 2005Date of Patent: March 22, 2011Assignee: Japan Science and Technology AgencyInventors: Hideomi Koinuma, Yuji Matsumoto, Ryota Takahashi
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Publication number: 20100151128Abstract: It comprises a mask (11) having a first, a second and a third action edge (11a, 11b, 11c), and a drive means for moving the mask (11) relative to a substrate (12) in a uniaxial direction (A) whereby moving the mask at a fixed rate of movement to cause the edges to successively act on an identical substrate region while successively applying different materials thereto forms thin films of three components successively with respective film thickness gradients oriented in three different directions mutually angularly spaced apart by an angle of 120° to allow these films to overlap, thereby forming a ternary phase diagrammatic thin film 13.Type: ApplicationFiled: January 5, 2010Publication date: June 17, 2010Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCYInventors: Hideomi KOINUMA, Yukio Yamamoto, Yuji Matsumoto, Ryota Takahashi
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Patent number: 7727686Abstract: To provide a method of making a film of organic material excellent in moisture barrier property and/or oxygen barrier property and also to provide an electronic device excellent in long term stability, in which the film obtained by such film making method is utilized to form a protective film for protecting an electronic device, and particularly an organic electronic device, to avoid deterioration of the performance, which would otherwise be brought about by moisture and oxygen in the atmosphere. The film is formed by depositing and solidifying, on a substrate, an evaporant formed by irradiating a liquid crystal polymer capable of exhibiting an optical anisotropy with pulsed laser.Type: GrantFiled: August 27, 2004Date of Patent: June 1, 2010Assignee: Japan Science and Technology AgencyInventors: Hideomi Koinuma, Kenji Itaka, Keiichirou Arai
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Patent number: 7692184Abstract: A substrate having organic thin film capable of growing two dimensionally such organic thin film as C60 and a transistor using the same are constituted with a substrate (1) having organic thin film by sequentially depositing a buffer layer (3) and organic thin film (4) on the substrate (2), and with the buffer layer orienting the organic thin film (4). A layer easily oriented with the substrate (2) and the buffer layer (3) may be inserted between the substrate (2) and the buffer layer (3). A sapphire substrate as the substrate (2), pentacene or pentacene fluoride as the buffer layer (3), and C60 or rubrene as the organic thin film (4) may be used, thereby C60 or rubrene two dimensional thin film of high quality can be obtained. By using such a substrate (1) having organic thin film, a field effect transistor of high quality can be realized.Type: GrantFiled: March 24, 2005Date of Patent: April 6, 2010Assignee: Japan Science and Technology AgencyInventors: Hideomi Koinuma, Kenji Itaka, Mitsugu Yamashiro
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Publication number: 20100058987Abstract: Disclosed is a device for vacuum processing that performs vapor-deposition on a substrate being heated in a vacuum chamber; the device, wherein the chamber has a light transmissible window formed in a section of the chamber; the light transmissible window and a holding part holding the substrate are connected by a linear space isolated from other parts in the chamber; a laser emitter is installed outside the light transmissible window; and the laser emitter emits a laser beam to the substrate through the linear space, thereby heating the substrate. This device enables laser heating, eliminating conventional drawbacks such as a decrease in laser output.Type: ApplicationFiled: February 1, 2007Publication date: March 11, 2010Inventors: Masatomo Sumiya, Mikk Lippmaa, Tsuyoshi Ohnishi, Eiji Fujimoto, Hideomi Koinuma
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Publication number: 20090213636Abstract: A Bi4Ti3O12 nanoplate, an array of such Bi4Ti3O12 nanoplate and their making methods as well as their applications are provided. Using a vapor phase growth method, a flux layer of VOx is deposited on a SrTiO3 (001) faced substrate and then Bi4Ti3O12 is deposited on the flux layer. A Bi4Ti3O12 single crystal nanoplate is formed standing up on the flux layer in the form of a rectangular solid whose independent three sides are crystallographically oriented in directions coincident with particular crystallographic directions of the single crystal substrate, respectively. The nanoplates as a nanostructure grown by the bottom-up method are substantially fixed in shape and are densely arrayed not in contact with one another, and are applicable to a low-cost ferroelectric memory and the like.Type: ApplicationFiled: August 1, 2005Publication date: August 27, 2009Inventors: Hideomi Koinuma, Yuji Matsumoto, Ryota Takahashi
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Patent number: 7507290Abstract: A flux assisted solid phase epitaxy that can make a thin film having a crystalline perfection comparable with that of a bulk crystal and at a reduced cost is provided in which an amorphous film of a mixture of an objective substance to be grown epitaxially and a flux of a substance producing a eutectic with the objective substance but not producing any compound therewith is deposited on a substrate at a temperature less than a eutectic point of the substances, and the substrate is heat-treated at a temperature not less than the eutectic point of the objective and flux substances. A solid phase reaction, namely solid phase diffusion causes the objective and flux substances to be mixed together to form a liquid phase in their eutectic state from which the objective substance precipitates and epitaxially grows on the substrate.Type: GrantFiled: March 22, 2005Date of Patent: March 24, 2009Assignee: Japan Science and Technology AgencyInventors: Hideomi Koinuma, Yuji Matsumoto, Ryota Takahashi
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Patent number: 7442252Abstract: The present invention provides methods for producing a multi-element oxide single crystal which contains Bi, which has high crystallinity independently of a preparation process, and which is represented by the formula (Bi2O2)Am?1BmO3m+1, wherein A is Sr, Ba, Ca, or Bi and B is Ti, Ta, or Nb. A flux layer, containing a composition satisfying the inequality 0<CuO/Bi2O3<2 and/or 0?TiO/Bi2O3<7/6 on a molar basis is deposited on a wafer and a single-crystalline thin-film is then deposited on the flux layer placed on the wafer. A melt of a composition which contains raw materials and a flux and which satisfies the above inequality is prepared and the melt is cooled such that a single crystal is grown. A CuO flux layer is deposited on a wafer and Bi—Ti—O is supplied to the flux layer using a Bi6Ti3O12, Bi7Ti3O12, or Bi8Ti3O12 target of which the Bi content is greater than that of an object film such that a Bi4Ti3O12 single-crystalline thin-film is formed above the wafer.Type: GrantFiled: May 21, 2004Date of Patent: October 28, 2008Assignee: Japan Science and Technology AgencyInventors: Hideomi Koinuma, Yuji Matsumoto, Ryota Takahashi
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Publication number: 20080210934Abstract: Object: To provide a semiconductor device using titanium dioxide as an active layer and a method for producing thereof. Means for Solving the Problems: The semiconductor device 10 according to the present invention includes TiO2 as an active layer thereof. The semiconductor device 10 according to the present invention includes a gate electrode 20, a TiO2 layer 12 which functions as a semiconductor active layer and forming a channel, a source electrode and a drain electrode being electrically connected to the TiO2 layer, and an insulating film formed between the gate electrode and the TiO2 layer. The TiO2 layer 12 may be a single crystal substrate including a Rutile or Anatase structure which has a step-terrace structure. The TiO2 layer 12 may be a vapor deposition film of TiO2. Further the present invention provides a method for producing the semiconductor device using titanium dioxide as the active layer.Type: ApplicationFiled: February 23, 2006Publication date: September 4, 2008Applicants: TOKYO INSTITUTE OF TECHNOLOGY, JAPAN SCIENCE AND TECHNOLOGY AGENCYInventors: Hideomi Koinuma, Yuji Matsumoto, Masao Katayama
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Publication number: 20070209571Abstract: A flux assisted solid phase epitaxy that can make a thin film having a crystalline perfection comparable with that of a bulk crystal and at a reduced cost is provided in which an amorphous film of a mixture of an objective substance to be grown epitaxially and a flux of a substance producing a eutectic with the objective substance but not producing any compound therewith is deposited on a substrate at a temperature less than a eutectic point of the substances, and the substrate is heat-treated at a temperature not less than the eutectic point of the objective and flux substances. A solid phase reaction, namely solid phase diffusion causes the objective and flux substances to be mixed together to form a liquid phase in their eutectic state from which the objective substance precipitates and epitaxially grows on the substrate.Type: ApplicationFiled: March 22, 2005Publication date: September 13, 2007Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCYInventors: Hideomi Koinuma, Yuji Matsumoto, Ryota Takahashi
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Patent number: 7259409Abstract: A thin film device includes a metal sulfide layer formed on a single crystal silicon substrate by epitaxial growth; and a compound thin film with ionic bonding, which is formed on the metal sulfide layer by epitaxial growth. Alternatively, a thin film device includes a metal sulfide layer formed on a single crystal silicon substrate by epitaxial growth; and at least two compound thin films with ionic bonding, which are formed on the metal sulfide layer by epitaxial growth. For example, (11 20) surface AlN/MnS/Si (100) thin films formed by successively stacking a MnS layer (about 50 nm thick) and an AlN layer (about 1000 nm thick) on a single crystal Si (100) substrate, are used as a substrate, and a (11 20) surface GaN layer (about 100 nm thick) operating as a light emitting layer is formed on the substrate, thereby fabricating a thin film device.Type: GrantFiled: September 22, 2003Date of Patent: August 21, 2007Assignee: Tokyo Institute of TechnologyInventors: Hideomi Koinuma, Jeong-Hwan Song, Toyohiro Chikyo, Young Zo Yoo, Parhat Ahmet, Yoshinori Konishi, Yoshiyuki Yonezawa
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Publication number: 20070190330Abstract: A substrate having organic thin film capable of growing two dimensionally such organic thin film as C60 and a transistor using the same are constituted with a substrate (1) having organic thin film by sequentially depositing a buffer layer (3) and organic thin film (4) on the substrate (2), and with the buffer layer orienting the organic thin film (4). A layer easily oriented with the substrate (2) and the buffer layer (3) may be inserted between the substrate (2) and the buffer layer (3). A sapphire substrate as the substrate (2), pentacene or pentacene fluoride as the buffer layer (3), and C60 or rubrene as the organic thin film (4) may be used, thereby C60 or rubrene two dimensional thin film of high quality can be obtained. By using such a substrate (1) having organic thin film, a field effect transistor of high quality can be realized.Type: ApplicationFiled: March 24, 2005Publication date: August 16, 2007Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCYInventors: Hideomi Koinuma, Kenji Itaka, Mitsugu Yamashiro
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Publication number: 20070160846Abstract: To provide a method of making a film of organic material excellent in moisture barrier property and/or oxygen barrier property and also to provide an electronic device excellent in long term stability, in which the film obtained by such film making method is utilized to form a protective film for protecting an electronic device, and particularly an organic electronic device, to avoid deterioration of the performance, which would otherwise be brought about by moisture and oxygen in the atmosphere. The film is formed by depositing and solidifying, on a substrate, an evaporant formed by irradiating a liquid crystal polymer capable of exhibiting an optical anisotropy with pulsed laser.Type: ApplicationFiled: August 27, 2004Publication date: July 12, 2007Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCYInventors: Hideomi Koinuma, Kenji Itaka, Keiichirou Arai
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Publication number: 20060288925Abstract: The present invention provides methods for producing a multi-element oxide single crystal which contains Bi, which has high crystallinity independently of a preparation process, and which is represented by the formula (Bi2O2)Am-1BmO3m+1, wherein A is Sr, Ba, Ca, or Bi and B is Ti, Ta, or Nb. A flux layer, containing a composition satisfying the inequality 0<CuO/Bi2O3<2 and/or 0?TiO/Bi2O3<7/6 on a molar basis is deposited on a wafer and a single-crystalline thin-film is then deposited on the flux layer placed on the wafer. A melt of a composition which contains raw materials and a flux and which satisfies the above inequality is prepared and the melt is cooled such that a single crystal is grown. A CuO flux layer is deposited on a wafer and Bi—Ti—O is supplied to the flux layer using a Bi6Ti3O12, Bi7Ti3O12, or Bi8Ti3O12 target of which the Bi content is greater than that of an object film such that a Bi4Ti3O12 single-crystalline thin-film is formed above the wafer.Type: ApplicationFiled: May 21, 2004Publication date: December 28, 2006Applicant: Japan Science and Technology AgencyInventors: Hideomi Koinuma, Yuji Matsumoto, Ryota Takahashi
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Patent number: 7150788Abstract: A method of adjusting the in-plane lattice constant of a substrate and an in-plane lattice constant adjusted substrate are provided. A crystalline substrate (1) made of SrTiO3 is formed at a first preestablished temperature thereon with a first epitaxial thin film (2) made of a first material, e. g., BaTiO3, and then on the first epitaxial thin film (2) with a second epitaxial thin film (6) made of a second material, e. g., BaxSr1?xTiO3 (where 0<x<1), that contains a substance of the first material and another substance which together therewith is capable of forming a solid solution in a preestablished component ratio. Thereafter, the substrate is heat-treated at a second preselected temperature. Heat treated at the second preestablished temperature, the substrate has dislocations (4) introduced therein and the second epitaxial thin film (6) has its lattice constant relaxed to a value close to the lattice constant of bulk crystal of the second material.Type: GrantFiled: August 21, 2002Date of Patent: December 19, 2006Assignee: Japan Science and Technology AgencyInventors: Hideomi Koinuma, Masashi Kawasaki, Tomoteru Fukumura, Kota Terai
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Patent number: 7029528Abstract: There are provided a method of superflattening an oxide crystal that is soluble neither with acid nor with alkaline, a method of making a ReCa4O(BO3)3 family oxide single crystal thin film using the superflattening method, a ReCa4O(BO3)3 family oxide single crystal thin film having a SHG property, a superflattening method for light incident/emitting surfaces, and a defect assessing method for oxide crystals. The surface of an oxide crystal that is soluble neither with acid nor with alkaline is reduced with a reducing agent, the reduced oxide crystal surface is dissolved with an aqueous solution of acid or alkaline, the surface dissolved oxide crystal is heat-treated in the atmosphere, whereby the surface of an oxide crystal that is soluble neither with acid nor with alkaline is superflattened to an atomic level.Type: GrantFiled: March 15, 2002Date of Patent: April 18, 2006Assignee: Japan Science and Technology CorporationInventors: Hideomi Koinuma, Yuji Matsumoto, Takatomo Sasaki, Yusuke Mori, Masashi Yoshimura
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Publication number: 20060057240Abstract: It comprises a mask (11) having a first, a second and a third action edge (11a, 11b, 11c), and a drive means for moving the mask (11) relative to a substrate (12) in a uniaxial direction (A) whereby moving the mask at a fixed rate of movement to cause the edges to successively act on an identical substrate region while successively applying different materials thereto forms thin films of three components successively with respective film thickness gradients oriented in three different directions mutually angularly spaced apart by an angle of 120° to allow these films to overlap, thereby forming a ternary phase diagrammatic thin film 13.Type: ApplicationFiled: September 19, 2003Publication date: March 16, 2006Inventors: Hideomi Koinuma, Yukio Yamamoto, Yuji Matsumoto, Ryota Takahashi