Abstract: A titanium dioxide.cobalt magnetic film is provided that is useful to make up a photocatalyst having high catalytic capability, a semiconductor material having an optical, an electrical and a magnetic function all in combination, and a transparent magnet. The titanium dioxide.cobalt magnetic film has a composition expressed by chemical formula: Ti1-xCoxO2 where 0<x?0.3, wherein a Ti atom at its lattice position is replaced with a Co atom, and the magnetic film is a film epitaxially grown on a single crystal substrate. The magnetic film has either anatase or rutile crystalline structure, has its band gap energy varying in a range between 3.13 eV and 3.33 eV according to the concentration of Co atoms replaced for Ti atoms at their lattice positions, is capable of retaining its magnetization even at a temperature higher than a room temperature, and is also transparent to a visible light. I the manufacture of the titanium dioxide.

Abstract: The invention provides a thin film device where ionic crystals are epitaxially grown on a Si single crystal substrate through a proper buffer layer, and its for fabrication method. A ZnS layer is first deposited on a Si single crystal substrate. Ionic crystal thin films (an n-GaN layer, a GaN layer, and a p-GaN layer) are deposited thereon. The ZnS thin film is an oriented film excellent in crystallinity and has excellent surface flatness. When ZnS can be once epitaxially grown on the Si single crystal substrate, the ionic crystal thin films can be easily epitaxially grown subsequently. Therefore, ZnS is formed to be a buffer layer, whereby even ionic crystals having differences in lattice constants from Si can be easily epitaxially grown in an epitaxial thin film with few lattice defects on the Si single crystal substrate. The characteristics of a thin film device utilizing it can be enhanced.

Abstract: The present invention is an tri-phase epitaxy method for preparing a single crystal oxide thin film, comprising the steps of depositing on a substrate an oxide thin film serving as a seed layer and having the same composition as that of an oxide thin film to be formed, depositing on the seed layer a thin film comprising a substance capable of being melted and liquidized by heat from the substrate and dissolving the oxide to be subsequent by deposited onto the seed layer, heating the substrate to form a liquid layer, and depositing an oxide on the seed layer through the liquid layer by use of a vapor-phase epitaxy method to form the single crystal oxide thin film. In this method, the oxygen partial pressure on the liquid layer is set in the range of 1.0 to 760 Torr during the film-forming step.

Abstract: A mixture of TiO2 and Co is placed in a vacuum chamber under selected oxygen pressure and irradiated in the vacuum chamber with a selected laser light to cause TiO2 and Co to evaporate from the target and a layer of TiO2-Co to epitaxially grow on a heated single crystal substrate. The titanium dioxide-cobalt magnetic film for use in a photocatalyst, a semiconductor material having optical, electrical and magnetic functions, and a transparent magnet. The film is expressed by Ti1-xCoxO2 where 0<x?0.3, and wherein a Ti atom at its lattice position is replaced with a Co atom. The film has anatase or rutile crystalline structure, has its band gap energy varying in a range between 3.13 eV and 3.33 eV, retains its magnetization even at a temperature higher than a room temperature, and is transparent to visible light.

Abstract: A method and device for measuring thermoelectric characteristics of a combinatorial sample. The method and device are useful for rapid sample evaluation, the investigation of thermoelectric materials, and the carrier control of semiconductors. The device includes combinatorial samples patterned with a metal mask, a pair of sample holders for applying a small temperature gradient to the sample, a thermocouple for measuring the temperature gradient, and a probe pin array in contact with the sample.

Abstract: The invention provides a thin film device where ionic crystals are epitaxially grown on a Si single crystal substrate through a proper buffer layer, and its for fabrication method. A ZnS layer is first deposited on a Si single crystal substrate. Ionic crystal thin films (an n-GaN layer, a GaN layer, and a p-GaN layer) are deposited thereon. The ZnS thin film is an oriented film excellent in crystallinity and has excellent surface flatness. When ZnS can be once epitaxially grown on the Si single crystal substrate, the ionic crystal thin films can be easily epitaxially grown subsequently. Therefore, ZnS is formed to be a buffer layer, whereby even ionic crystals having differences in lattice constants from Si can be easily epitaxially grown in an epitaxial thin film with few lattice defects on the Si single crystal substrate. The characteristics of a thin film device utilizing it can be enhanced.

Abstract: A composite integrated circuit is characterized in that to put an oxide thin film into practical use as an electronic device, a highly crystalline oxide thin film is grown on a silicon substrate. A MOS circuit and a thin film capacitor are formed independently, and the two substrates are laminated using an epoxy resin. They are connected through buried wiring, thereby constituting a composite circuit package. As a second substrate 1a, a (110) plane orientation silicon substrate is used which differs from the IC substrate with a (100) plane. On the (110) silicon substrate after the termination processing, a dielectric layer is film deposited, followed by forming an upper electrode, and by forming a thin film coil. Insulating magnetic gel is filled between coil wires and its upper portion. Thus, the fabrication process of the thin film coil and the composite integrated circuit is completed.

Abstract: A method of adjusting the in-plane lattice constant of a substrate and an in-plane lattice constant adjusted substrate are provided. A crystalline substrate (1) made of SrTiO3 is formed at a first preestablished temperature thereon with a first epitaxial thin film (2) made of a first material, e. g., BaTiO3, and then on the first epitaxial thin film (2) with a second epitaxial thin film (6) made of a second material, e. g., BaxSr1-xTiO3 (where 0<x<1), that contains a substance of the first material and another substance which together therewith is capable of forming a solid solution in a preestablished component ratio. Thereafter, the substrate is heat-treated at a second preselected temperature. Heat treated at the second preestablished temperature, the substrate has dislocations (4) introduced therein and the second epitaxial thin film (6) has its lattice constant relaxed to a value close to the lattice constant of bulk crystal of the second material.

Abstract: A thin film device includes a metal sulfide layer formed on a single crystal silicon substrate by epitaxial growth; and a compound thin film with ionic bonding, which is formed on the metal sulfide layer by epitaxial growth. Alternatively, a thin film device includes a metal sulfide layer formed on a single crystal silicon substrate by epitaxial growth; and at least two compound thin films with ionic bonding, which are formed on the metal sulfide layer by epitaxial growth. For example, (11{overscore (2)}0) surface AlN/MnS/Si (100) thin films formed by successively stacking a MnS layer (about 50 nm thick) and an AlN layer (about 1000 nm thick) on a single crystal Si (100) substrate, are used as a substrate, and a (11{overscore (2)}0) surface GaN layer (about 100 nm thick) operating as a light emitting layer is formed on the substrate, thereby fabricating a thin film device.

Abstract: There are provided a method of superflattening an oxide crystal that is soluble neither with acid nor with alkaline, a method of making a ReCa4O(BO3)3 family oxide single crystal thin film using the superflattening method, a ReCa4O(BO3)3 family oxide single crystal thin film having a SHG property, a superflattening method for light incident/emitting surfaces, and a defect assessing method for oxide crystals. The surface of an oxide crystal that is soluble neither with acid nor with alkaline is reduced with a reducing agent, the reduced oxide crystal surface is dissolved with an aqueous solution of acid or alkaline, the surface dissolved oxide crystal is heat-treated in the atmosphere, whereby the surface of an oxide crystal that is soluble neither with acid nor with alkaline is superflattened to an atomic level.

Abstract: The present invention provides a method and device for measuring thermoelectric characteristics of a combinatorial sample, wherein the method and device are useful for rapid sample evaluation, the investigation of thermoelectric materials, and the carrier control of semiconductors.

Abstract: The present invention is an tri-phase epitaxy method for preparing a single crystal oxide thin film, comprising the steps of depositing on a substrate an oxide thin film serving as a seed layer and having the same composition as that of an oxide thin film to be formed, depositing on the seed layer a thin film comprising a substance capable of being melted and liquidized by heat from the substrate and dissolving the oxide to be subsequent by deposited onto the seed layer, heating the substrate to form a liquid layer, and depositing an oxide on the seed layer through the liquid layer by use of a vapor-phase epitaxy method to form the single crystal oxide thin film. In this method, the oxygen partial pressure on the liquid layer is set in the range of 1.0 to 760 Torr during the film-forming step.

Abstract: A high-energy electron diffraction apparatus in which its electron beam source includes a field emission type electron emitter and a final lens stop or diaphragm is disposed between an objective lens and a specimen. A region of environment of the electron beam that extends from the electron beam source to an objective lens stop or diaphragm is held to a high vacuum, and a region of environment of the electron beam that extends from the objective lens stop or diaphragm to the final lens stop or diaphragm is held to a medium vacuum. A beam axial alignment electrode assembly is disposed between the objective lens stop or diaphragm and the final lens stop or diaphragm. There are also disposed an astigmatic correction electrode assembly and a scan deflection electrode assembly between the final lens stop or diaphragm and the specimen. A screen is spaced away from the specimen at a distance of 50 mm or less.

Abstract: A laser heating apparatus (20) for heating a thin film forming substrate (1) in a thin film manufacturing process is disclosed. The substrate (1) set in position in a vacuum chamber (101) of a film forming apparatus (100) is irradiated with a laser light and is thereby heated to a desired temperature. The laser light is guided to a region of the substrate (1) by means of an optical fiber (23), and the laser beams emanating from the outlet end of the optical fiber (23) is incident directly or indirectly via a reflecting mirror (33) on the substrate (1). The optical fiber (23) is sheathed with a jacket tube (24) whose interior is vacuum drawn. Using a laser light enables the arrangement to be used even in an oxidizing atmosphere and even an insulating substrate to be heated.

Abstract: A cyano process of introducing cyano ions (CN−) into an amorphous silicon layer is performed after the amorphous silicon layer has been formed over a substrate or after the layer has been exposed to light. For example, the substrate is immersed in an aqueous solution containing potassium cyanide (KCN) in a vessel. The cyano process eliminates factors (e.g., weak bonds, defects, and centers of recombination) of decrease in photoconductivity of the as-deposited amorphous silicon thin film, which are identifiable in the as-deposited film. As a result, the photoconductivity of the amorphous silicon layer is already higher than usual from the beginning and will hardly decrease even upon exposure to light.

Abstract: A titanium dioxide.cobalt magnetic film is provided that is useful to make up a photocatalyst having high catalytic capability, a semiconductor material having an optical, an electrical and a magnetic function all in combination, and a transparent magnet. The titanium dioxide.cobalt magnetic film has a composition expressed by chemical formula: Ti1-xCoxO2 where 0<x≦0.3, wherein a Ti atom at its lattice position is replaced with a Co atom, and the magnetic film is a film epitaxially grown on a single crystal substrate. The magnetic film has either anatase or rutile crystalline structure, has its band gap energy varying in a range between 3.13 eV and 3.33 eV according to the concentration of Co atoms replaced for Ti atoms at their lattice positions, is capable of retaining its magnetization even at a temperature higher than a room temperature, and is also transparent to a visible light.

Abstract: The invention provides a thin film device where ionic crystals are epitaxially grown on a Si single crystal substrate through a proper buffer layer, and its for fabrication method. A ZnS layer is first deposited on a Si single crystal substrate. Ionic crystal thin films (an n-GaN layer, a GaN layer, and a p-GaN layer) are deposited thereon. The ZnS thin film is an oriented film excellent in crystallinity and has excellent surface flatness. When ZnS can be once epitaxially grown on the Si single crystal substrate, the ionic crystal thin films can be easily epitaxially grown subsequently. Therefore, ZnS is formed to be a buffer layer, whereby even ionic crystals having differences in lattice constants from Si can be easily epitaxially grown in an epitaxial thin film with few lattice defects on the Si single crystal substrate. The characteristics of a thin film device utilizing it can be enhanced.

Abstract: A composite integrated circuit is characterized in that to put an oxide thin film into practical use as an electronic device, a highly crystalline oxide thin film is grown on a silicon substrate. A MOS circuit and a thin film capacitor are formed independently, and the two substrates are laminated using an epoxy resin. They are connected through buried wiring, thereby constituting a composite circuit package. As a second substrate 1 a, a (110) plane orientation silicon substrate is used which differs from the IC substrate with a (100) plane. On the (110) silicon substrate after the termination processing, a dielectric layer is film deposited, followed by forming an upper electrode, and by forming a thin film coil. Insulating magnetic gel is filled between coil wires and its upper portion. Thus, the fabrication process of the thin film coil and the composite integrated circuit is completed.

Abstract: A cyano process of introducing cyano ions (CN−) into an amorphous silicon layer is performed after the amorphous silicon layer has been formed over a substrate or after the layer has been exposed to light. For example, the substrate is immersed in an aqueous solution containing potassium cyanide (KCN) in a vessel. The cyano process eliminates factors (e.g., weak bonds, defects, and centers of recombination) of decrease in photoconductivity of the as-deposited amorphous silicon thin film, which are identifiable in the as-deposited film. As a result, the photoconductivity of the amorphous silicon layer is already higher than usual from the beginning and will hardly decrease even upon exposure to light.

Abstract: A combinatorial X-ray diffractor, particularly a combinatorial X-ray diffractor which can measure one row of samples among a plurality of samples arranged into a matrix simultaneously by X-ray diffraction. For the purpose of high throughput screening, a plurality of samples (10) are arranged into a row X1, a row X2, a row X3, and a row X4 on a sample stage and samples in each row are measured simultaneously by X-ray diffraction, measured data are processed by an information processor (20), information data useful for the evaluation of thin film material are automatically extracted and arranged and the extracted and arranged information data are displayed on a display apparatus (27).