Abstract: A cyano process of introducing cyano ions (CN−) into an amorphous silicon layer is performed after the amorphous silicon layer has been formed over a substrate or after the layer has been exposed to light. For example, the substrate is immersed in an aqueous solution containing potassium cyanide (KCN) in a vessel. The cyano process eliminates factors (e.g., weak bonds, defects, and centers of recombination) of decrease in photoconductivity of the as-deposited amorphous silicon thin film, which are identifiable in the as-deposited film. As a result, the photoconductivity of the amorphous silicon layer is already higher than usual from the beginning and will hardly decrease even upon exposure to light.

Abstract: A combinatorial molecular layer epitaxy apparatus is provided which includes a common chamber (22) having pressure therein controllable; one or more conveyable substrate heating units (36) having a substrate holder (48) for holding one or more substrates in the common chamber; and one or more process conducting chambers (24, 26, 28) having pressure therein controllable and provided to correspond to the substrate heating units.

Abstract: A ZnO thin film is fabricated on the c-surface of a sapphire substrate through use of a laser molecular beam epitaxy (MBE) method-which is effective for epitaxial growth of an oxide thin film through control at an atomic level. The thus-formed ZnO thin film has a considerably high crystallinity; the half width of an X-ray rocking curve was 0.06.degree.. The thin film is of an n-type and has a carrier density of 4.times.10.sup.17 /cm.sup.3. The thin film fabricated in a state in which oxygen partial pressure is held constant at 10.sup.-6 Torr has a structure in which hexagon-shaped nanocrystals of uniform size are close-packed, reflecting the crystal behavior of a wurtzite type. Since in each nanocrystal there is observed a spiral structure formed by steps of a unit cell height (0.5 nm), the nanocrystals are considered to grow in a thermodynamically equilibrated state. The lateral size of the nanocrystal can be controlled within the range of approximately 50 to 250 nm.

Abstract: A process for surface treatment of a vulcanized rubber is disclosed, said process comprising: generating a nonequilibrium low-temperature plasma under atmospheric pressure between a cathode and an insulating dielectric which is interposed between the cathode and an anode while introducing a gas for generating plasma to a plasma-generating region between the cathode and the insulating dielectric, placing the vulcanized rubber in air and outside the plasma-generating region so that a surface of the vulcanized rubber faces the plasma-generating region, and directing the gas from the plasma-generating region toward the surface of the vulcanized rubber so that the gas impinges against the rubber surface for effecting surface treatment.

Abstract: A surface treating method of single crystals by which single crystals for substrates having finished surfaces showing pit-free and atomic scale step structures are obtained by treating the {100}-plane surfaces of single-crystal SrTiO.sub.3 substrates by dissolving two-dimensional-lattice atomic layers forming the surfaces one layer by one layer by using a fluorine-based acidic solution (maintained at >35.degree. C. in temperature and <4 in pH) as a solution A and water as a solution B by alternately immersing the substrates in the substrates in the solution A and B.

Abstract: A process and apparatus for depositing a film as desired on the surface of a substrate yet at a low temperature, said process comprising introducing a product gas into a film deposition chamber having provided therein a substrate being mounted on a support, and depositing a film on the surface of said substrate by activating said product gas inside said film deposition chamber while applying ultrasonic oscillation to said substrate.

Abstract: An apparatus for generating plasma of helium mainly-contained gas added with halogen element using high-frequency energy which is applied between concentrically-arranged electrodes to conduct an etching treatment on a substrate with the thus-generated plasma, is equipped with a grounded electrode on the surface of the substrate, the grounded electrode serving to prevent electrification or charging of the substrate. A cylindrical insulator is provided between the electrodes so as to be contacted with the outside electrode, and a voltage applied between the central electrode and the cylindrical insulator is heightened by reducing the thickness of the cylindrical insulator or increasing the dielectric constant of the cylindrical insulator, so that low-temperature plasma is generated under atmospheric pressure using argon mainly-contained gas in a reaction space.

Abstract: A plasma generating device and a method for etching a minute region of a substrate under atmospheric pressure are disclosed. A gas containing helium as the main ingredient is glow discharged under atmospheric pressure, a halide is added to the discharge so as to activate the halogen element, and a solid material (substrate) such as silicon is chemically etched by using the radioals. At that time, a magnetic field acts on the discharge so as to draw out electrons and ions to the surface of the substrate, thereby increasing the radical density in the vicinity of the surface of the substrate and the etching rate.

Abstract: A plasma generating device and a method for etching a minute region of a substrate under atmospheric pressure are disclosed. A gas containing helium as the main ingredient is glow discharged under atmospheric pressure, a halide is added to the discharge so as to activate the halogen element, and a solid material (substrate) such as silicon is chemically etched by using the radicals. At that time, a magnetic field acts on the discharge so as to draw out electrons and ions to the surface of the substrate, thereby increasing the radical density in the vicinity of the surface of the substrate and the etching rate.

Abstract: A plasma generating device includes a central conductor, a peripheral cylindrical conductor surrounding the central conductor, an insulating cylinder interposed between the central conductor and the peripheral conductor in order to prevent direct arc discharge from occurring between the central conductor and the peripheral conductor. The central and peripheral conductors and the insulating cylinder are coaxially arranged in order to define a cylindrical discharging space therein. By applying a high frequency energy to the central conductor, glow discharge is caused between the central and peripheral conductors. A reactive gas is introduced from one end of the discharging space, excited by the glow discharge and goes out from the other end as an excited plasma to a working place where a work piece is processed by the plasma.

Abstract: A superconductive device and method for the manufacture thereof is disclosed, having a tunneling Josephson element comprising a first oxide superconductor electrode, a blocking layer consisting of a metal substantially inert to oxygen formed on the surface of the oxide superconductor, an insulating thin film layer formed on the blocking layer, and a second superconductor electrode opposing said first electrode formed on the insulating thin film.

Abstract: A superconductive device and method for the manufacture thereof is disclosed, having a tunneling Josephson element comprising a first oxide superconductor electrode, a blocking layer consisting of a metal substantially inert to oxygen formed on the surface of the oxide superconductor, an insulating thin film layer formed on the blocking layer, and a second superconductor electrode opposing said first electrode formed on the insulating thin film.

Abstract: A method of manufacturing a conducting or superconducting film comprises the steps of providing a powdered composition of complex oxide conducting or superconducting materials represented by the general formula: (La.sub.l-x M.sub.x).sub.y CuO.sub.4-.delta., where M is a member selected from the group of alkali earth metals and mixtures of the alkali earth metals: x=0 to 1. y=1.5 to 2.5, adding an organic solvent to the powdered composition to form a kneaded paste, printing the paste on a substrate before drying and firing.

Abstract: A superlattice film is formed by introducing a mixture of a first gas reactant capable of only plasma-excited chemical reaction and a second gas reactant capable of both plasma-excited chemical reactions into a reaction chamber, discontinuously carrying out plasma-excited chemical reaction, and continuously carrying out light-excited chemical reaction, thereby alternately depositing on a substrate a thin film layer which is formed when the plasma- and light-excited chemical reactions are carried out and another thin film layer which is formed when the plasma-excited chemical reaction is interrupted, thereby forming a thin film of alternately deposited layers.

Abstract: The present invention provides a manufacturing method of a conductive or superconductive thin film of mixed oxide as an easier way to apply the mixed oxide type superconductive materials to electronic devices, etc. The manufacturing method of the present invention comprises using a mixed oxide composition showing conductivity or superconductivity as a target material and sputtering it onto a substrate to form a thin film. Examples of the mixed oxide compositions showing conductivity or superconductivity and to be used as the target material in the present invention are mixed oxides consisting of lanthanoid, alkali earth metal and copper as main components, particularly, a mixed oxide consisting essentially of La-Sr-Cu-O, La-Ba-Cu-O, La-Ca-Cu-O etc. or mixtures thereof, materials containing a small quantity of other metal oxide(s), or mixed oxides mainly consisting of Yb-Ba-Cu-O, Er-Ba-Cu-O, Ho-Ba-Cu-O, Tm-Ba-Cu-O or mixtures thereof.