Abstract: The color purities of blue-green light and yellow or yellow-green light are enhanced. A light emitting device (100) configured to emit at least blue-green light and yellow or yellow-green light includes a substrate (51), an LED chip group, and a sealing resin part (50) collectively sealing the LED chip group, wherein the LED chip group at least includes a green LED chip (GB), a green LED chip (GY), a blue LED chip (B), and a red LED chip (R), and the green LED chip (GB) has a dominant wavelength shorter than a dominant wavelength of the green LED chip (GY).

Abstract: The color purities of blue-green light and yellow or yellow-green light are enhanced. A light emitting device (100) configured to emit at least blue-green light and yellow or yellow-green light includes a substrate (51), an LED chip group, and a sealing resin part (50) collectively sealing the LED chip group, wherein the LED chip group at least includes a green LED chip (GB), a green LED chip (GY), a blue LED chip (B), and a red LED chip (R), and the green LED chip (GB) has a dominant wavelength shorter than a dominant wavelength of the green LED chip (GY).

Abstract: Disclosed is a light-emitting device comprising a linear light source (21, 22, and 23) including a linear array of light-emitting elements (21a, 22a, and 23a) on a elongate board (10), the array extending in a direction parallel to a longer side of the board, wherein the light-emitting elements (21a, 22a, and 23a), which constitute the linear light source (21, 22, and 23), are connected in series, a protective element 31, 32, and 33 is connected in parallel with each group of series-connected light-emitting elements, and the protective element (31, 2, and 33) is located on the board (10) and external, with respect to the light-emitting element array direction, to one of the light-emitting elements that is at an end of the array.

Abstract: The light emitting device (10A) includes an LED chip (12) and a ceramic support body (14) where the LED chip (12) is placed. The ceramic support body (14) includes a placement surface (14d) where the LED chip (12) is placed, internal terminals (22a, 22b) disposed on the placement surface (14d), a back surface (14c) that face the placement surface (14d), a mounting surface (14b) between the placement surface (14d) and the back surface (14c), and external terminals (28a, 28b) disposed on the mounting surface (14b). The internal terminals (22a, 22b) are coupled to the external terminals (28a, 28b) through at least one inner via (24a, 24b).

Abstract: In a semiconductor laser apparatus, semiconductor laser devices are mounted on a loading face of a radiation base portion produced from a radiation material in a mount board, and the radiation base portion and a cap portion constitute an envelope surrounding the semiconductor laser devices. Further, the radiation base portion and interconnections formed on and an extending face of the radiation base portion constitute an external connection terminal. Therefore, heat generated by the semiconductor laser devices is efficiently transferred to the radiation base portion produced from a radiation material. Further, constituting the external connection terminal allows a leadless configuration to be implemented. Thus, a semiconductor laser apparatus which is sufficient in radiation characteristics and is capable of supporting a low-profile specification is provided.

Abstract: A semiconductor laser device has a support body constructed of a disk-shaped section and a columnar body formed in a central portion of this disk-shaped section, one set of leads fit to this support body in an integrated manner, a semiconductor laser element mounted on a reference surface of the columnar body, and a wire for electrically connecting this semiconductor laser element with one of the leads. The disk-shaped section of the support body has an opening therethrough. The one set of leads are inserted through the opening, placed in position, and integrated with the support body via a resin block filling the opening.

Abstract: In a semiconductor laser device, a wiring board (101) has pad patterns on its top surface, on which a block (102) is also mounted. The block (102) has a first mounting surface (113) and a second mounting surface (114), both of which face in an identical direction. The block (102) also has a raising mirror (111) for changing an optical axis of light. On the first mounting surface (113) is mounted a semiconductor laser element (103) which emits laser light (L). On the second mounting surface (114) is mounted a light receiving element (104) which receives reflected light of the laser light (L).

Abstract: A semiconductor laser device, with which a compact and thin optical pickup can be realized, is provided. On the top surface of a supporting member, there is formed an element mounting area for mounting a series of elements including a semiconductor laser element, and a light detecting element which detects a laser beam emitted from the semiconductor laser element and reflected by a surface of an outside optical disc so as to be re-entered. An optical path from the semiconductor laser element to the surface of the optical disc includes a vertical optical path advancing from the element mounting area of the supporting member in an approximately vertical upward direction. On a pair of right and left opposing ends of the supporting member, arcuate curved outer surfaces are formed, respectively, so as to fit the supporting member into an installation hole, for a semiconductor laser device, having arcuate curved inner surfaces.

Abstract: In a semiconductor laser apparatus, semiconductor laser devices are mounted on a loading face of a radiation base portion produced from a radiation material in a mount board, and the radiation base portion and a cap portion constitute an envelope surrounding the semiconductor laser devices. Further, the radiation base portion and interconnections formed on and an extending face of the radiation base portion constitute an external connection terminal. Therefore, heat generated by the semiconductor laser devices is efficiently transferred to the radiation base portion produced from a radiation material. Further, constituting the external connection terminal allows a leadless configuration to be implemented. Thus, a semiconductor laser apparatus which is sufficient in radiation characteristics and is capable of supporting a low-profile specification is provided.

Abstract: A semiconductor laser device, with which a compact and thin optical pickup can be realized, is provided. On the top surface of a supporting member, there is formed an element mounting area for mounting a series of elements including a semiconductor laser element, and a light detecting element which detects a laser beam emitted from the semiconductor laser element and reflected by a surface of an outside optical disc so as to be re-entered. An optical path from the semiconductor laser element to the surface of the optical disc includes a vertical optical path advancing from the element mounting area of the supporting member in an approximately vertical upward direction. On a pair of right and left opposing ends of the supporting member, arcuate curved outer surfaces are formed, respectively, so as to fit the supporting member into an installation hole, for a semiconductor laser device, having arcuate curved inner surfaces.

Abstract: A semiconductor laser device has a support body constructed of a disk-shaped section and a columnar body formed in a central portion of this disk-shaped section, one set of leads fit to this support body in an integrated manner, a semiconductor laser element mounted on a reference surface of the columnar body, and a wire for electrically connecting this semiconductor laser element with one of the leads. The disk-shaped section of the support body has an opening therethrough. The one set of leads are inserted through the opening, placed in position, and integrated with the support body via a resin block filling the opening.

Abstract: A semiconductor laser device has a laser diode (LD) and an N-channel FET that are connected in parallel. In a normal state, an anode and a cathode of the LD are substantially short-circuited through the FET, so that almost of static electricity applied to a terminal connected to the LD flows to the FET and the LD is protected from static electricity. When driving the LD to emit light, a control signal of a negative potential is applied to a terminal connected to a gate of the FET to turn off the FET. With a driving current applied to the terminal connected to the LD, the driving current flows through the LD, which then emits light.