Semiconductor device
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Description
FIG. 1 is a top, front, and right perspective of a semiconductor device showing my new design;
FIG. 2 is a front elevational view thereof;
FIG. 3 is a rear elevational view thereof;
FIG. 4 is a top plan view thereof;
FIG. 5 is a bottom plan view; and,
FIG. 6 is a right side elevational view, the left side elevational view being a mirror image thereof.
The broken line showing of the environment is for illustrative purpose only and forms no part of the claimed design.
Claims
The ornamental design for a “semiconductor device”, as shown and described.
Referenced Cited
Patent History
Patent number: D481689
Type: Grant
Filed: Mar 11, 2003
Date of Patent: Nov 4, 2003
Assignee: Sharp Kabushiki Kaisha (Osaka)
Inventor: Hideshi Koizumi (Nara-ken)
Primary Examiner: Philip S. Hyder
Assistant Examiner: Selina Sikder
Attorney, Agent or Law Firm: Nixon & Vanderhye
Application Number: 29/177,395
Type: Grant
Filed: Mar 11, 2003
Date of Patent: Nov 4, 2003
Assignee: Sharp Kabushiki Kaisha (Osaka)
Inventor: Hideshi Koizumi (Nara-ken)
Primary Examiner: Philip S. Hyder
Assistant Examiner: Selina Sikder
Attorney, Agent or Law Firm: Nixon & Vanderhye
Application Number: 29/177,395
Classifications
Current U.S. Class:
Semiconductor, Transistor Or Integrated Circuit (24) (D13/182)
International Classification: 1303;
International Classification: 1303;