Abstract: An imaging apparatus includes light-transmitting substrate; a plurality of lenses which faces a first surface of the substrate; a light shielding layer which is formed on the second surface of the substrate and has an opening section through which optical axes of each lens pass; and a plurality of light sensing elements which is placed so that the optical axes of the lenses pass through a light sensing surface facing the second surface at an interval. An efficient diameter of the lens, a diameter of the opening section, a distance between the light sensing surfaces and the light shielding layer, a diameter of the light sensing surface, and a distance between the light sensing surface and center of the lens satisfy a<(h·D+h·d?s·d)/s and tan?1{(p?a/2?d/2)/h}>sin?1(1/n).

Abstract: The invention provides a liquid crystal device including: a first substrate; a second substrate that is provided over the first substrate in such a manner that the first substrate and the second substrate face each other; a plurality of optical sensing sections that is formed in an image display area over the first substrate; and a plurality of light-amount adjusting sections that is formed in the image display area in such a manner that each of the plurality of light-amount adjusting sections includes a liquid crystal portion that overlaps the corresponding optical sensing section in a plan view, constituting a part of a liquid crystal layer that is sandwiched between the first substrate and the second substrate, the plurality of light-amount adjusting sections being capable of adjusting, independently of one another, the amount of incident light that enters the plurality of optical sensing sections through an image display surface that lies at one of two surfaces of the second substrate that does not face t

Abstract: A liquid crystal device includes a plurality of selection lines, a plurality of signal lines, a plurality of pixel portions, a plurality of photosensor portions, a plurality of first power lines, and a plurality of sense lines. The plurality of selection lines are provided in a line direction. The plurality of signal lines are provided in a column direction. The plurality of pixel portions are provided at positions corresponding to intersections of the selection lines and the signal lines. The plurality of photosensor portions are provided in correspondence with a portion of the plurality of pixel portions. The plurality of first power lines are provided in the line direction. The plurality of sense lines are provided in the column direction. Each of the plurality of pixel portions includes a first switching element and a liquid crystal.

Abstract: An electroluminescent device includes a substrate; a light-emitting region including a plurality of sub-pixels including switching elements, portions of an organic planarization layer for covering irregularities caused by the switching elements, reflective layers arranged on the organic planarization layer, protective layers extending over the respective reflective layers, light-transmissive first electrode layers which lie on the respective protective layers and which are electrically connected to the switching elements, portions of an organic light-emitting layer lying over the first electrode layers, and portions of a second electrode layer lying on the organic light-emitting layer; and a non-light-emitting region located outside the light-emitting region. The light-emitting region and the non-light-emitting region are arranged on the substrate.

Abstract: An optical head includes a plurality of unit regions repeatedly arrayed in one direction. Each region is constituted by a light-emitting element which is driven by a current to emit light, a control transistor which is connected in parallel with the light-emitting element, and which receives gray-scale data that specifies a high gray-scale level for the light-emitting element so as to be turned off and which receives gray-scale data that specifies a low gray-scale level for the light-emitting element so as to be turned on, and a driving transistor which is connected in series with the light-emitting element to generate a current. In each of the plurality of unit regions, a thermal resistance between the light-emitting element formed in the unit region and the control transistor formed in the unit region is smaller than a thermal resistance between the light-emitting element and a control transistor formed in a unit region adjacent to the unit region.

Abstract: A light-emitting device includes an organic insulating layer lying above a face of a substrate, reflective layers arranged on a face of the organic insulating layer, an inorganic insulating layer extending over the reflective layers, pixel electrodes arranged on the inorganic insulating layer, and light-emitting sections arranged on the respective pixel electrodes. The inorganic insulating layer has openings and regions in which no pixel electrodes are arranged when viewed from above. The openings extend through the respective regions to the organic insulating layer. A method for manufacturing such a light-emitting device includes forming openings in regions of the inorganic insulating layer in advance of the formation of the light-emitting sections such that the openings extend through the regions to the organic insulating layer, the regions having no pixel electrodes thereon when viewed from above.

Abstract: A semiconductor device includes a thin-film transistor including a polycrystalline silicon layer, disposed above a substrates serving as an active layer. The thin-film transistor includes a first thin-film transistor section including a first channel region disposed in a drain-side portion of the polycrystalline silicon layer and also includes a second thin-film transistor section including a second channel region that is adjacent to the first channel region with an impurity-implanted region disposed therebetween. The first and second thin-film transistor sections are of the same conductivity type. The gate electrode of the first thin-film transistor section is electrically connected to the gate electrode of the second thin-film transistor section. The first thin-film transistor section has a channel length of less than 2 ?m.

Abstract: A method of manufacturing a light-emitting device, in which a light-emitting body is sealed between a substrate and a sealing body, includes forming a light-emitting layer, made of a light emitting material, on the surface of the substrate; forming the sealing body which partially covers the light-emitting layer; and removing portions of the light-emitting layer, which are not covered by the sealing body, using the sealing body as a mask, thereby forming the light-emitting body.

Abstract: A light emitting device includes: a pixel circuit; and a driving circuit that drives the pixel circuit, wherein the pixel circuit includes: a light emitting element; a driving transistor that is connected to the light emitting element in series; a storage capacitor that is located between a gate of the driving transistor and a source of the driving transistor; and a selecting transistor that is located between the gate of the driving transistor and a signal line that corresponds to the pixel circuit, after a writing period starts, the driving circuit sets a potential of a selection signal to a selection potential to turn on the selecting transistor and outputs a data potential to the signal line to cause a current corresponding to the data potential to flow in the driving transistor, the selection signal being to be supplied to the gate of the selecting transistor, the data potential being changed over time, and after the driving circuit sets the potential of the selection signal to the selection potential an

Abstract: Provided is a light emitting apparatus where each pixel circuit is provided with the reset transistor, which is disposed between the node of the pixel circuit and the first feed line corresponding to the adjacent pixel circuit in the second direction as viewed from the pixel circuit. In addition, in the initialization period before the selection period, in which the scan line corresponding to the pixel circuit is selected, and in the compensation period, the reset transistor of the pixel circuit is set to the ON state, and the values of the power supply voltages output to the first feed line corresponding to the pixel circuit and the first feed line corresponding to the adjacent pixel circuit in the second direction as viewed from the pixel circuit are variably controlled, so that the initialization or compensation operation of the pixel circuit is performed.

Abstract: A light emitting apparatus includes a pixel circuit, and a drive circuit which drives the pixel circuit. The pixel circuit has a light emitting device, a driving transistor connected in series to the light emitting device, a capacitative element arranged between a gate and a source of the driving transistor, a first switching device arranged between the gate of the driving transistor and a signal line corresponding to the pixel circuit, and a second switching device arranged between the source of the driving transistor and a reset line.

Abstract: An electroluminescent device includes a substrate; a light-emitting region including a plurality of sub-pixels including switching elements, portions of an organic planarization layer for covering irregularities caused by the switching elements, reflective layers arranged on the organic planarization layer, protective layers extending over the respective reflective layers, light-transmissive first electrode layers which lie on the respective protective layers and which are electrically connected to the switching elements, portions of an organic light-emitting layer lying over the first electrode layers, and portions of a second electrode layer lying on the organic light-emitting layer; and a non-light-emitting region located outside the light-emitting region. The light-emitting region and the non-light-emitting region are arranged on the substrate.

Abstract: An electroluminescent device includes a substrate; a light-emitting region including a plurality of sub-pixels including switching elements, portions of an organic planarization layer for covering irregularities caused by the switching elements, reflective layers arranged on the organic planarization layer, protective layers extending over the respective reflective layers, light-transmissive first electrode layers which lie on the respective protective layers and which are electrically connected to the switching elements, portions of an organic light-emitting layer lying over the first electrode layers, and portions of a second electrode layer lying on the organic light-emitting layer; and a non-light-emitting region located outside the light-emitting region. The light-emitting region and the non-light-emitting region are arranged on the substrate.

Abstract: A light-emitting device includes a light-emitting element that emits light of an amount based on the size of a driving current; a driving transistor, the gate thereof being electrically connected to a first node, that outputs a current flowing between the drain-source as the driving current; and a control unit that supplies a first data potential to the first node and supplies a current to the driving transistor so as to set the voltage between the gate and source of the driving transistor to a compensated voltage based on the mobility of the driving transistor, and then supplies a second data potential determined in accordance with the first data potential to the first node.

Abstract: Provided is a method of driving a pixel circuit including a light emitting element and a driving transistor which are connected in series to each other, and a storage capacitor disposed between a path between the light emitting element and the driving transistor and a gate of the driving transistor, the method including the steps of: supplying a driving signal to a gate of the driving transistor; and changing the potential of the driving signal over time so that the time rate of change of the potential of the driving signal at the point in time when the supply of the driving signal stops becomes the time rate of change corresponding to a specified gradation of the pixel circuit.

Abstract: Provided is a method of driving a pixel circuit including a light emitting element and a driving transistor which are connected in series, and a storage capacitor disposed between the path between the light emitting element and the driving transistor and the gate of the driving transistor, the method including the steps of: supplying a driving signal, of which the time rate of change of the potential varies over time, to a gate of the driving transistor; stopping the supply of the driving signal at a point in time which is set to be variable in accordance with a gradation specified for the pixel circuit; and supplying a driving current corresponding to an open circuit voltage of the storage capacitor to the light emitting element.

Abstract: There is provided a method of driving a pixel circuit that includes a light emitting element; a driving transistor that is connected to the light emitting element in series; a storage capacitor that is interposed between a path, which is formed between the light emitting element and the driving transistor, and a gate of the driving transistor; a selection switch that is interposed between the gate of the driving transistor and a signal line; and a first control switch that is interposed between the gate of the driving transistor and the signal line and is connected to the selection switch in series.

Abstract: Provided is a method of driving a plurality of pixel circuits. The pixel circuits are disposed corresponding to intersections between a plurality of scanning lines and a plurality of signal lines. Each of the pixel circuits includes: a light emitting element; a driving transistor connected to the light emitting element in series; a holding capacitor interposed between a gate of the driving transistor and a path between the light emitting element and the driving transistor; and a selection switch electrically interconnecting the signal line and the gate of the driving transistor at the time of the selection of the scanning line.

Abstract: A method of manufacturing a semiconductor element includes: (a) preparing a first substrate provided with a plurality of protruding sections formed on a surface of the first substrate and a second substrate provided with a semiconductor film formed on a surface of the second substrate; and (b) executing a heat treatment on the semiconductor film while the plurality of protruding sections and the semiconductor film are in contact with each other.

Abstract: A pixel circuit includes a light-emitting device, a driving transistor, and a storage capacitance. The method of driving the pixel circuit includes: performing a compensating operation of asymptotically causing the voltage across the storage capacitance to converge with a voltage corresponding to a threshold voltage of the driving transistor, over a time duration variably set according to a gradation value, in a first period; changing the voltage across the storage capacitance from a voltage set by the compensating operation to a voltage corresponding to the gradation value by applying a gradation voltage corresponding to the gradation value from a signal line to a gate of the driving transistor, in a second period; and supplying a driving current corresponding to the voltage across the storage capacitance to the light-emitting device by stopping applying a voltage to the gate, in a third period.