Abstract: A light-emitting device includes an organic insulating layer lying above a face of a substrate, reflective layers lying on a face of the organic insulating layer, an inorganic insulating layer lying over the reflective layers, and light-emitting elements arranged above the reflective layers with the inorganic insulating layer disposed therebetween. The light-emitting elements are arranged in array and each reflective layer overlaps a group of the light-emitting elements when viewed from above. An electronic apparatus includes the light-emitting device.

Abstract: A semiconductor device and an electro-optical device that ensures a stable output are provided even when there is a change in a source-drain current in a saturated operation region of a thin film transistor due to kink effects. The thin film transistor has a multi-gate structure with a polycrystalline silicon film as an active layer, and a source-side first thin film transistor portion and a drain-side second thin film transistor portion connected in series. The first thin film transistor portion has a drain-side back gate electrode that is connected with a first front gate electrode. The second thin film transistor portion has a source-side back gate electrode that is connected with a second front gate electrode.

Abstract: A light-emitting device includes an organic insulating layer lying above a face of a substrate, reflective layers arranged on a face of the organic insulating layer, an inorganic insulating layer extending over the reflective layers, pixel electrodes arranged on the inorganic insulating layer, and light-emitting sections arranged on the respective pixel electrodes. The inorganic insulating layer has openings and regions in which no pixel electrodes are arranged when viewed from above. The openings extend through the respective regions to the organic insulating layer. A method for manufacturing such a light-emitting device includes forming openings in regions of the inorganic insulating layer in advance of the formation of the light-emitting sections such that the openings extend through the regions to the organic insulating layer, the regions having no pixel electrodes thereon when viewed from above.

Abstract: A light-emitting device includes an organic insulating layer lying above a face of a substrate, reflective layers arranged on a face of the organic insulating layer, an inorganic insulating layer extending over the reflective layers, pixel electrodes arranged on the inorganic insulating layer, and light-emitting sections arranged on the respective pixel electrodes. The inorganic insulating layer has openings and regions in which no pixel electrodes are arranged when viewed from above. The openings extend through the respective regions to the organic insulating layer. A method for manufacturing such a light-emitting device includes forming openings in regions of the inorganic insulating layer in advance of the formation of the light-emitting sections such that the openings extend through the regions to the organic insulating layer, the regions having no pixel electrodes thereon when viewed from above.

Abstract: A liquid crystal device includes a plurality of selection lines, a plurality of signal lines, a plurality of pixel portions, a plurality of photosensor portions, a plurality of first power lines, and a plurality of sense lines. The plurality of selection lines are provided in a line direction. The plurality of signal lines are provided in a column direction. The plurality of pixel portions are provided at positions corresponding to intersections of the selection lines and the signal lines. The plurality of photosensor portions are provided in correspondence with a portion of the plurality of pixel portions. The plurality of first power lines are provided in the line direction. The plurality of sense lines are provided in the column direction. Each of the plurality of pixel portions includes a first switching element and a liquid crystal.

Abstract: The invention provides a liquid crystal device including: a first substrate; a second substrate that is provided over the first substrate in such a manner that the first substrate and the second substrate face each other; a plurality of optical sensing sections that is formed in an image display area over the first substrate; and a plurality of light-amount adjusting sections that is formed in the image display area in such a manner that each of the plurality of light-amount adjusting sections includes a liquid crystal portion that overlaps the corresponding optical sensing section in a plan view, constituting a part of a liquid crystal layer that is sandwiched between the first substrate and the second substrate, the plurality of light-amount adjusting sections being capable of adjusting, independently of one another, the amount of incident light that enters the plurality of optical sensing sections through an image display surface that lies at one of two surfaces of the second substrate that does not face t

Abstract: A semiconductor device and an electro-optical device that ensures a stable output are provided even when there is a change in a source-drain current in a saturated operation region of a thin film transistor due to kink effects. The thin film transistor has a multi-gate structure with a polycrystalline silicon film as an active layer, and a source-side first thin film transistor portion and a drain-side second thin film transistor portion connected in series. The first thin film transistor portion has a drain-side back gate electrode that is connected with a first front gate electrode. The second thin film transistor portion has a source-side back gate electrode that is connected with a second front gate electrode.

Abstract: A semiconductor device includes a thin-film transistor including a polycrystalline silicon layer, disposed above a substrates serving as an active layer. The thin-film transistor includes a first thin-film transistor section including a first channel region disposed in a drain-side portion of the polycrystalline silicon layer and also includes a second thin-film transistor section including a second channel region that is adjacent to the first channel region with an impurity-implanted region disposed therebetween. The first and second thin-film transistor sections are of the same conductivity type. The gate electrode of the first thin-film transistor section is electrically connected to the gate electrode of the second thin-film transistor section. The first thin-film transistor section has a channel length of less than 2 ?m.

Abstract: An electroluminescent device includes a substrate; a light-emitting region including a plurality of sub-pixels including switching elements, portions of an organic planarization layer for covering irregularities caused by the switching elements, reflective layers arranged on the organic planarization layer, protective layers extending over the respective reflective layers, light-transmissive first electrode layers which lie on the respective protective layers and which are electrically connected to the switching elements, portions of an organic light-emitting layer lying over the first electrode layers, and portions of a second electrode layer lying on the organic light-emitting layer; and a non-light-emitting region located outside the light-emitting region. The light-emitting region and the non-light-emitting region are arranged on the substrate.

Abstract: A light-emitting device includes an organic insulating layer lying above a face of a substrate, reflective layers lying on a face of the organic insulating layer, an inorganic insulating layer lying over the reflective layers, and light-emitting elements arranged above the reflective layers with the inorganic insulating layer disposed therebetween. The light-emitting elements are arranged in array and each reflective layer overlaps a group of the light-emitting elements when viewed from above. An electronic apparatus includes the light-emitting device.

Abstract: An optical head includes a plurality of unit regions repeatedly arrayed in one direction. Each region is constituted by a light-emitting element which is driven by a current to emit light, a control transistor which is connected in parallel with the light-emitting element, and which receives gray-scale data that specifies a high gray-scale level for the light-emitting element so as to be turned off and which receives gray-scale data that specifies a low gray-scale level for the light-emitting element so as to be turned on, and a driving transistor which is connected in series with the light-emitting element to generate a current. In each of the plurality of unit regions, a thermal resistance between the light-emitting element formed in the unit region and the control transistor formed in the unit region is smaller than a thermal resistance between the light-emitting element and a control transistor formed in a unit region adjacent to the unit region.

Abstract: A method of manufacturing a semiconductor element includes: (a) preparing a first substrate provided with a plurality of protruding sections formed on a surface of the first substrate and a second substrate provided with a semiconductor film formed on a surface of the second substrate; and (b) executing a heat treatment on the semiconductor film while the plurality of protruding sections and the semiconductor film are in contact with each other.

Abstract: A light-emitting device includes an organic insulating layer lying above a face of a substrate, reflective layers arranged on a face of the organic insulating layer, an Inorganic insulating layer extending over the reflective layers, pixel electrodes arranged on the inorganic insulating layer, and light-emitting sections arranged on the respective pixel electrodes. The inorganic insulating layer has openings and regions in which no pixel electrodes are arranged when viewed from above. The openings extend through the respective regions to the organic insulating layer. A method for manufacturing such a light-emitting device includes forming openings in regions of the inorganic insulating layer in advance of the formation of the light-emitting sections such that the openings extend through the regions to the organic insulating layer, the regions having no pixel electrodes thereon when viewed from above.

Abstract: A method of manufacturing a light-emitting device, in which a light-emitting body is sealed between a substrate and a sealing body, includes forming a light-emitting layer, made of a light emitting material, on the surface of the substrate; forming the sealing body which partially covers the light-emitting layer; and removing portions of the light-emitting layer, which are not covered by the sealing body, using the sealing body as a mask, thereby forming the light-emitting body.

Abstract: The invention produces a high-quality display, in which the occurrence of display variations is reduced, with low power consumption. One field is divided into subfields corresponding to the bits of gray scale data, and the period of each subfield is set in such a manner as to correspond to the weight of each bit. A pixel includes memories that store bits of the gray scale data, a selector that selects a memory that stores the bit corresponding to the subfield from among these memories, a closed loop of inverters, and a TFT that reads and latches the bits stored in the selected memory and that rewrites into the selected memory, and complementary switches that select, with respect to a pixel electrode, a voltage corresponding to an ON display signal or an OFF display signal in accordance with the bit read from the selected memory.

Abstract: The invention obtains high-quality display by suppressing display unevenness. Sub-pixels are disposed correspondingly to each set of the intersections between 3m pairs of paired scanning lines, which are formed in such a manner as to extend in the X-direction, and n pairs of paired data lines, which are a digital data line and an analog data line and extend in the Y-direction. Further, a set of sub-pixels consecutively arranged in the Y-direction is driven as one pixel. In this case, in a first mode, each of the sub-pixels of one pixel turns on or off according to gradation data representing the gradation level of this pixel. Further, in a second mode, a voltage signal representing the gradation level of this pixel is applied to the sub-pixels of one pixel. Furthermore, in a first case of the second mode, the voltage signals are supplied by the first data line driving circuit in line sequence.

Abstract: A liquid crystal display device with point-sequential driving so that unevenness in brightness on a display screen becomes less noticeable. A signal line driving circuit that applies an image signal voltage sent from a signal processing circuit and a timing circuit to signal lines for point-sequential driving of the signal lines includes a driving direction switching circuit for inverting driving direction in the point-sequential driving, and the signal processing circuit includes an image signal rearranging circuit rearranging image signals in accordance with inversion of the driving direction, in synchronization with the inversion of the driving direction.

Abstract: The invention produces a high-quality display, in which the occurrence of display variations is reduced, with low power consumption. One field is divided into subfields corresponding to the bits of gray scale data, and the period of each subfield is set in such a manner as to correspond to the weight of each bit. A pixel includes memories that store bits of the gray scale data, a selector that selects a memory that stores the bit corresponding to the subfield from among these memories, a closed loop of inverters, and a TFT that reads and latches the bits stored in the selected memory and that rewrites into the selected memory, and complementary switches that select, with respect to a pixel electrode, a voltage corresponding to an ON display signal or an OFF display signal in accordance with the bit read from the selected memory.

Abstract: The invention obtains high-quality display by suppressing display unevenness. Sub-pixels are disposed correspondingly to each set of the intersections between 3 m pairs of paired scanning lines, which are formed in such a manner as to extend in the X-direction, and n pairs of paired data lines, which are a digital data line and an analog data line and extend in the Y-direction. Further, a set of sub-pixels consecutively arranged in the Y-direction is driven as one pixel. In this case, in a first mode, each of the sub-pixels of one pixel turns on or off according to gradation data representing the gradation level of this pixel. Further, in a second mode, a voltage signal representing the gradation level of this pixel is applied to the sub-pixels of one pixel. Furthermore, in a first case of the second mode, the voltage signals are supplied by the first data line driving circuit in line sequence.

Abstract: To provide a method of manufacturing a semiconductor device, a method of manufacturing an active matrix substrate, and an electrooptic device in which in forming different type TFTs on the same substrate, a variation in the LDD length or offset length of TFT can be suppressed by a small number of steps. In the method of manufacturing an active matrix substrate, a patterning mask 554 used for forming gate electrodes 15 and 25 is left, and used in introducing a medium concentration of phosphorus ion to introduce impurities in self alignment with the patterning mask 554. Next, with the patterning mask 554 removed, low-concentration of phosphorus ion is introduced by using the gate electrodes 15 and 25 as a mask to form low-concentration source-drain regions 111, 121, 211 and 221 in self alignment with the gate electrodes 15 and 25. The LDD length of each of the regions is equal to the amount of side etching caused in patterning the gate electrodes 15 and 25.