Patents by Inventor Hideto TATENO

Hideto TATENO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200347498
    Abstract: A technique capable of exhausting a process gas in a wide pressure range includes a substrate processing apparatus including: a process chamber; a gas supply system configured to supply a process gas containing a compound capable of reacting with a metal; and a gas exhaust system configured to exhaust an inner atmosphere of the process chamber, wherein the gas exhaust system includes: a common exhaust piping; a first exhaust piping made of a resin incapable of reacting with the compound and whose one end is connected to the common exhaust piping via a first valve and the other end is connected to a first exhauster; and a second exhaust piping made of the metal and whose one end is connected to the common exhaust piping via a second valve and the other end is connected to a second exhauster.
    Type: Application
    Filed: July 20, 2020
    Publication date: November 5, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Tetsuaki INADA, Hideto TATENO
  • Publication number: 20200303234
    Abstract: There is provided a technique that includes a process chamber configured to process a substrate; a transfer chamber in communication with a lower portion of the process chamber, and configured to transfer the substrate to a substrate support disposed in the process chamber, and a heating chamber in communication with a lower portion of the transfer chamber, and configured to heat the substrate support and the substrate.
    Type: Application
    Filed: March 17, 2020
    Publication date: September 24, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Tomoya MATSUI, Hideto TATENO, Makoto HIRANO
  • Publication number: 20190003047
    Abstract: Described herein is a technique capable of preventing an occurrence of the metal contamination in a vaporizer for vaporizing a liquid source. According to the technique described herein, there is provided a vaporizer including: a vaporization vessel constituted by a quartz body; and an atomizer made of a fluorine resin and configured to atomize a liquid source using a carrier gas (atomization gas) and to supply the atomized liquid source into the vaporization vessel.
    Type: Application
    Filed: September 7, 2018
    Publication date: January 3, 2019
    Inventors: Hideto TATENO, Akinori TANAKA, Daisuke HARA, Masahisa OKUNO, Takuya JODA, Takashi TSUKAMOTO, Sadayoshi HORII, Toru KAKUDA
  • Publication number: 20180204720
    Abstract: Described herein is a technique capable of acquiring, monitoring and recording the progress of the reaction between a substrate and a reactive gas contained in a process gas in a process chamber during the processing of the substrate. According to the technique, there is provided a substrate processing apparatus including: a process chamber accommodating a substrate; a process gas supply system configured to supply a process gas into the process chamber via a process gas supply pipe; an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; a first gas concentration sensor configured to detect a first concentration of a reactive gas contained in the process gas in the process gas supply pipe; and a second gas concentration sensor configured to detect a second concentration of the reactive gas contained in an exhaust gas in the exhaust pipe.
    Type: Application
    Filed: March 12, 2018
    Publication date: July 19, 2018
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Akinori TANAKA, Hideto TATENO, Sadayoshi HORII
  • Publication number: 20180204742
    Abstract: A substrate processing apparatus, includes: a process chamber accommodating a substrate; a vaporizer vaporizing a liquid precursor to generate reaction gas and deliver a processing gas containing the reaction gas and a carrier gas, the vaporizer including: a vaporization vessel; and a heater heating the liquid precursor introduced into the vessel; a carrier gas flow rate controller controlling flow rate of the carrier gas supplied to the vaporizer; a liquid precursor flow rate controller controlling flow rate of the liquid precursor; a processing gas supply pipe introducing the processing gas delivered from the vaporizer into the process chamber; and a gas concentration sensor detecting a gas concentration of the reaction gas contained in the processing gas delivered from the vaporizer into the processing gas supply pipe.
    Type: Application
    Filed: March 13, 2018
    Publication date: July 19, 2018
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Hideto TATENO, Daisuke HARA, Masahisa OKUNO, Takuya JODA, Takashi TSUKAMOTO, Akinori TANAKA, Toru KAKUDA, Sadayoshi HORII
  • Patent number: 9816182
    Abstract: A substrate processing apparatus is disclosed. The substrate processing apparatus includes a process chamber configured to accommodate a substrate; a gas supply unit configured to supply a process gas into the process chamber; a lid member configured to block an end portion opening of the process chamber; an end portion heating unit installed around a side wall of an end portion of the process chamber; and a thermal conductor installed on a surface of the lid member in an inner side of the process chamber, and configured to be heated by the end portion heating unit.
    Type: Grant
    Filed: January 29, 2015
    Date of Patent: November 14, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Hideto Tateno, Yuichi Wada, Hiroshi Ashihara, Keishin Yamazaki, Takurou Ushida, Iwao Nakamura, Manabu Izumi
  • Patent number: 9793112
    Abstract: To improve the characteristics of a film formed on a substrate, a method of manufacturing a semiconductor device includes: loading a substrate into a processing container, the substrate being provided with a film having a silazane bond, the film being subjected to pre-baking; supplying oxygen-containing gas at a first temperature not higher than the temperature of the pre-baking; and supplying processing gas containing at least any one of steam and hydrogen peroxide at a second temperature higher than the first temperature.
    Type: Grant
    Filed: March 23, 2016
    Date of Patent: October 17, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Takuya Joda, Toru Kakuda, Masahisa Okuno, Hideto Tateno
  • Patent number: 9587313
    Abstract: A substrate processing apparatus includes: a reaction tube configured to accommodate a plurality of substrates and to be supplied with a gas generated by vaporizing or turning into mist a solution containing a reactant in a solvent; a lid configured to close the reaction tube; a first heater configured to heat the plurality of substrates; a thermal conductor placed on the lid on an upper surface thereof; a second heater placed outside the reaction tube around a side thereof, the second heater being configured to heat the gas flowing near the lid; and a heating element placed on the lid on a lower surface thereof, the heating element configured to heat the lid.
    Type: Grant
    Filed: January 26, 2015
    Date of Patent: March 7, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yuichi Wada, Hiroshi Ashihara, Hideto Tateno, Harunobu Sakuma
  • Patent number: 9502239
    Abstract: There is provided a substrate processing method, including: (a) loading a substrate into a processing vessel having a pre-baked film containing a silazane bond; (b) heating the substrate to a first temperature and supplying a process gas to the heated substrate; and (c) heating the substrate to which the process gas has been supplied, to a second temperature which is higher than the first temperature and less than or equal to a temperature at which the pre-bake has been performed.
    Type: Grant
    Filed: May 8, 2015
    Date of Patent: November 22, 2016
    Assignees: HITACHI KOKUSAI ELECTRIC INC., AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L.
    Inventors: Masahisa Okuno, Tooru Kakuda, Hideto Tateno, Takuya Joda, Masamichi Kurokawa
  • Publication number: 20160203976
    Abstract: To improve the characteristics of a film formed on a substrate, a method of manufacturing a semiconductor device includes: loading a substrate into a processing container, the substrate being provided with a film having a silazane bond, the film being subjected to pre-baking; supplying oxygen-containing gas at a first temperature not higher than the temperature of the pre-baking; and supplying processing gas containing at least any one of steam and hydrogen peroxide at a second temperature higher than the first temperature.
    Type: Application
    Filed: March 23, 2016
    Publication date: July 14, 2016
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Takuya JODA, Toru KAKUDA, Masahisa OKUNO, Hideto TATENO
  • Publication number: 20160002789
    Abstract: A substrate processing apparatus includes a processing chamber housing a substrate, a vaporizer which vaporizes processing liquid and supply processing gas into the processing chamber, a reserve tank storing the processing liquid, a line switching unit connected to the reserve tank, a tank supply pipe connected to the line switching unit and supplies the processing liquid to the reserve tank, an exhausting unit connected to the line switching unit and exhausts the processing liquid in the reserve tank, and a controlling unit which controls the line switching unit to exhaust the processing liquid for exhausting the processing liquid from the reserve tank to the exhausting unit and exhaust the processing liquid in the pipe for supplying the processing liquid from the tank supply pipe to the exhausting unit before and/or after supplying the processing liquid from the processing liquid supplying pipe to the reserve tank.
    Type: Application
    Filed: September 16, 2015
    Publication date: January 7, 2016
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Tadashi KONTANI, Hideto TATENO, Atsushi UMEKAWA
  • Patent number: 9190299
    Abstract: An apparatus for manufacturing semiconductor devices is provided with a processing liquid supply part for supplying processing liquid into a processing chamber which houses a substrate, a heater part for heating the processing liquid in the processing chamber, and a substrate support part which is provided in the processing chamber and supports the substrate.
    Type: Grant
    Filed: May 21, 2014
    Date of Patent: November 17, 2015
    Assignee: Hitachi Kokusai Electric, Inc.
    Inventors: Yuichi Wada, Harunobu Sakuma, Hiroshi Ashihara, Hideto Tateno
  • Patent number: D778457
    Type: Grant
    Filed: August 19, 2015
    Date of Patent: February 7, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Daisuke Hara, Hideto Tateno
  • Patent number: D778458
    Type: Grant
    Filed: August 19, 2015
    Date of Patent: February 7, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Hideto Tateno, Daisuke Hara
  • Patent number: D788038
    Type: Grant
    Filed: February 18, 2016
    Date of Patent: May 30, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Hideto Tateno, Daisuke Hara
  • Patent number: D788704
    Type: Grant
    Filed: February 18, 2016
    Date of Patent: June 6, 2017
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Hideto Tateno, Daisuke Hara
  • Patent number: D788705
    Type: Grant
    Filed: February 18, 2016
    Date of Patent: June 6, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Hideto Tateno, Daisuke Hara
  • Patent number: D788706
    Type: Grant
    Filed: February 18, 2016
    Date of Patent: June 6, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Hideto Tateno, Daisuke Hara
  • Patent number: D813065
    Type: Grant
    Filed: August 8, 2016
    Date of Patent: March 20, 2018
    Assignees: HITACHI KOKUSAI ELECTRIC INC., HORIBA ADVANCED TECHNO CO., LTD.
    Inventors: Hideto Tateno, Akinori Tanaka, Kimihiko Arimoto
  • Patent number: D837706
    Type: Grant
    Filed: September 22, 2016
    Date of Patent: January 8, 2019
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Daisuke Hara, Hideto Tateno