Patents by Inventor Hidetoshi Fujii

Hidetoshi Fujii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210129263
    Abstract: A linear friction welding method capable of accurately controlling a welding temperature and capable of lowering the welding temperature is provided. The present invention is a linear friction welding method comprising: a first step of forming a welded interface by bringing one member into contact with the other member; a second step of repeatedly sliding one member and the other member on the same locus and discharging flash from the welded interface in a state where pressure is applied substantially perpendicularly to the welded interface; and a third step of forming a welded surface by stopping the sliding and setting the pressure to be not less than the yield stress and not more than the tensile strength of one member and/or the other member at a desired welding temperature.
    Type: Application
    Filed: February 1, 2018
    Publication date: May 6, 2021
    Applicant: OSAKA UNIVERSITY
    Inventors: Hidetoshi Fujii, Yoshiaki Morisada, Yasuhiro Aoki, Masanori Yasuyama, Gen Murayama
  • Publication number: 20210107087
    Abstract: To provide a solid phase welding method and a solid phase welding apparatus which are possible to accurately control the welding temperature, to lower the welding temperature and to achieve a solid phase welding of the metallic materials. The present invention provides a solid phase welding method for metallic materials comprising, a first step of forming an interface to be welded by abutting end portions of one material to be welded and the other material to be welded and applying a pressure in a direction substantially perpendicular to the interface to be welded, a second step of raising a temperature of the vicinity of the interface to be welded to a welding temperature by an external heating means, wherein the pressure is set to equal to or more than the yield strength of the one material to be welded and/or the other material to be welded at the welding temperature.
    Type: Application
    Filed: February 22, 2019
    Publication date: April 15, 2021
    Applicant: Osaka University
    Inventors: Hidetoshi FUJII, Yoshiaki MORISADA, Huihong LIU, Yasuhiro AOKI, Masayoshi KAMAI
  • Publication number: 20210079243
    Abstract: An active-energy-ray-curable composition is provided that includes an active-energy-ray-polymerizable compound, an amine compound, and water. The active-energy-ray-polymerizable compound comprises resin particles having a 50% cumulative particle diameter (D50) of 5 nm or greater but 50 nm or less. The amine compound has a molecular weight of 118.0 or less and a boiling point of 120 degrees C. or higher. The proportion of the water in the active-energy-ray-curable composition is 50.0 percent by mass or greater.
    Type: Application
    Filed: September 15, 2020
    Publication date: March 18, 2021
    Inventor: Hidetoshi FUJII
  • Publication number: 20210002131
    Abstract: The disclosure relates to a method for manufacturing recessed micromechanical structures in a MEMS device wafer. First vertical trenches in the device wafer define the horizontal dimensions of both level and recessed structures. The horizontal face of the device wafer and the vertical sidewalls of the first vertical trenches are then covered with a self-supporting etching mask which is made of a self-supporting mask material, which is sufficiently rigid to remain standing vertically in the location where it was deposited even as the sidewall upon which it was deposited is etched away. Recess trenches are then etched under the protection of the self-supporting mask. The method allows a spike-preventing aggressive etch to be used for forming the recess trenches, without harming the sidewalls in the first vertical trenches.
    Type: Application
    Filed: August 26, 2020
    Publication date: January 7, 2021
    Inventor: Hidetoshi FUJII
  • Publication number: 20200361025
    Abstract: A pressure receiving surface inclined to a rotation axis is provided on the side surface of a stir probe of a rotating tool. The pressure receiving surface includes a pressure receiving region which is always perpendicular to a rotation tangential direction in a cross section perpendicular to the rotation axis. In friction stir processing, the stir probe is caused to rotate in a rotation direction B in which the normal direction of the pressure receiving surface is positive. According to this kind of rotating tool, as it has no shoulder, a joint width does not increase even when a stirring region is deep, and also, a plastic flow in a rotation direction is generated by a pressure receiving surface, so that it is possible to reduce the proportion of the plastic flow in the rotation axis direction, and thus possible to suppress an occurrence of burr.
    Type: Application
    Filed: February 27, 2020
    Publication date: November 19, 2020
    Applicants: Mitsubishi Electric Corporation, OSAKA UNIVERSITY
    Inventors: Tetsuya AMASAKI, Hidetoshi FUJII, Keisuke MURASE, Seiiyu ISHIMOTO, Takuya IKEDA, Muneaki MUKUDA, Takushi TAKIZAWA, Naohiko HARADA, Shigenobu TOCHIYAMA
  • Patent number: 10829657
    Abstract: An active energy ray-curable composition is provided which comprises a polymerizable monomer, a polysilane compound containing a phenyl group in a repeating unit, and a photopolymerization initiator.
    Type: Grant
    Filed: February 26, 2019
    Date of Patent: November 10, 2020
    Assignee: Ricoh Company, Ltd.
    Inventors: Hidetoshi Fujii, Michihiko Namba, Manabu Arita
  • Patent number: 10807863
    Abstract: The disclosure relates to a method for manufacturing recessed micromechanical structures in a MEMS device wafer. First vertical trenches in the device wafer define the horizontal dimensions of both level and recessed structures. The horizontal face of the device wafer and the vertical sidewalls of the first vertical trenches are then covered with a self-supporting etching mask which is made of a self-supporting mask material, which is sufficiently rigid to remain standing vertically in the location where it was deposited even as the sidewall upon which it was deposited is etched away. Recess trenches are then etched under the protection of the self-supporting mask. The method allows a spike-preventing aggressive etch to be used for forming the recess trenches, without harming the sidewalls in the first vertical trenches.
    Type: Grant
    Filed: May 16, 2018
    Date of Patent: October 20, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Hidetoshi Fujii
  • Publication number: 20200270469
    Abstract: An active-energy-ray-polymerizable initiator having a structure represented by the following general formula (1) is provided. In general formula (1), L1 represents —C(?O)—O— (binding to L2 side) or —O—, L2 represents —O(CH2)p-(binding to L1 side), —(OC2H4)n-(binding to L1 side), or —(OC3H6)m-(binding to L1 side), where p represents an integer of 2 to 16, n represents an integer of 2 to 12, and m represents 2 or 3, L3 represents a direct binding or —NH—, L4 represents —OC2H4-(binding to L3 side) or —(OC2H4)2-(binding to L3 side), and R represents —H or —CH3.
    Type: Application
    Filed: January 28, 2020
    Publication date: August 27, 2020
    Inventors: Shigeyuki HARADA, Hidetoshi FUJII
  • Patent number: 10689536
    Abstract: An ink is provided. The ink includes a colorant, an organic solvent, a resin particle including an anionic urethane resin, and an organic amine compound having a boiling point in the range of from 120° C. to 200° C. and a molecular weight of 100 or less, and water, and the mass ratio of the organic amine compound to the resin particle is in the range of from 0.01 to 1.00.
    Type: Grant
    Filed: February 24, 2016
    Date of Patent: June 23, 2020
    Assignee: Ricoh Company, Ltd.
    Inventors: Amika Sagara, Hidetoshi Fujii, Michihiko Namba, Hiroaki Takahashi, Kiminori Masuda
  • Publication number: 20200168465
    Abstract: A method for manufacturing recessed micromechanical structures in a wafer. A first etching mask and a second etching mask are patterned on the horizontal face of the wafer. The second etching mask defines at least one recess area and the first etching mask defines at least one etch-control area within the at least one recess area. The placement, number and dimensions of the etch-control areas influence the vertical etch rate of the recessed structure. Adjacent structures can be etched to different recess depths by selecting suitable etch-control areas.
    Type: Application
    Filed: November 6, 2019
    Publication date: May 28, 2020
    Inventor: Hidetoshi FUJII
  • Publication number: 20200032084
    Abstract: A curable composition comprises water, a polysilane compound having a phenyl group, and at least one of a polymerizable particle and a polymerizable monomer.
    Type: Application
    Filed: July 19, 2019
    Publication date: January 30, 2020
    Inventor: Hidetoshi FUJII
  • Publication number: 20200023458
    Abstract: The present invention provides a friction welding method capable of reducing the welding temperature and a friction welding method capable of obtaining a welded portion free of defects regardless the type of material. A frictional welding method in which one member is brought into contact with the other member and slides while a load is applied substantially perpendicularly to the interface to be welded, the frictional welding method comprising: a first step in which frictional welding is carried out by setting a pressure calculated from the area and the load of the interface to be welded to be equal to or higher than the yield stress and the tensile strength of one member and/or the other member at a desired welding temperature; and a second step in which frictional welding is carried out by lowering the load, wherein the first step and the second step are continuously carried out.
    Type: Application
    Filed: March 9, 2018
    Publication date: January 23, 2020
    Applicant: OSAKA UNIVERSITY
    Inventors: Hidetoshi Fujii, Yoshiaki Morisada, Yasuhiro Aoki
  • Patent number: 10466627
    Abstract: Member for an image forming apparatus having an outer layer that includes polyethylene glycol and a polyether ester amide having therein a structural unit of polyethylene glycol.
    Type: Grant
    Filed: January 27, 2017
    Date of Patent: November 5, 2019
    Assignee: RICOH COMPANY, LTD.
    Inventors: Hidetoshi Fujii, Akira Izutani, Ryoh Miyakoshi
  • Publication number: 20190270901
    Abstract: An active energy ray-curable composition is provided which comprises a polymerizable monomer, a polysilane compound containing a phenyl group in a repeating unit, and a photopolymerization initiator.
    Type: Application
    Filed: February 26, 2019
    Publication date: September 5, 2019
    Inventors: Hidetoshi FUJII, Michihiko NAMBA, Manabu ARITA
  • Patent number: 10400120
    Abstract: An ink including an organic solvent, a pigment, a polyurethane particle, and water is provided. The organic solvent includes at least one of 3-methoxy-1-butanol and 3-methoxy-1-propanol. The polyurethane particle has a particle diameter D50 of 50 nm or less.
    Type: Grant
    Filed: June 5, 2018
    Date of Patent: September 3, 2019
    Assignee: Ricoh Company, Ltd.
    Inventors: Hidetoshi Fujii, Amika Sagara
  • Publication number: 20190210149
    Abstract: The friction stir welding tool member according to the present invention is made of a ceramic member in which a shoulder portion and a probe portion are integrally formed, wherein a root portion of the probe portion and an end portion of the shoulder portion have a curved surface shape; and the friction stir welding tool member has a ratio (R1/D) of 0.02 or more and 0.20 or less when a curvature radius of the end portion of the shoulder portion is defined as R1 (mm) and an outer diameter of the shoulder portion is defined as D (mm). In addition, the ceramic member is preferably made of a silicon nitride sintered body having a Vickers hardness of 1400 HV1 or more. According to the above-described configuration, a friction stir welding tool member having excellent durability can be provided.
    Type: Application
    Filed: August 4, 2017
    Publication date: July 11, 2019
    Applicants: OSAKA UNIVERSITY, TOSHIBA MATERIALS CO., LTD.
    Inventors: Hidetoshi FUJII, Yoshiaki MORISADA, Kai FUNAKI, Isao IKEDA, Yutaka ABE, Masahiro KATO
  • Publication number: 20190168337
    Abstract: The friction stir welding tool member according to the present invention is made of a silicon nitride sintered body, wherein the silicon nitride sintered body contains 15% by mass or less of additive components except silicon nitride in such a manner that the additive components include at least one element selected from lanthanoid elements and at least one element selected from Mg, Ti, Hf, and Mo. In addition, it is preferable that the additive components further include at least one element selected from Al, Si, and C. According to the above-described configuration, a friction stir welding tool member having an excellent durability can be provided.
    Type: Application
    Filed: August 4, 2017
    Publication date: June 6, 2019
    Applicants: OSAKA UNIVERSITY, TOSHIBA MATERIALS CO., LTD.
    Inventors: Hidetoshi FUJII, Yoshiaki MORISADA, Kai FUNAKI, Isao IKEDA, Yutaka ABE, Masahiro KATO
  • Patent number: 10280321
    Abstract: An ink includes a pigment, a wax, a water soluble solvent including a solvent having an SP value of from 9.0 to 11.0, and water, wherein the mass ratio of the content of the wax in the ink to the content of the solvent having an SP value of from 9.0 to 11.0 is in a range of from 1.0:2.5 to 1.0:25.0.
    Type: Grant
    Filed: January 20, 2016
    Date of Patent: May 7, 2019
    Assignee: Ricoh Company, Ltd.
    Inventors: Akihiko Matsuyama, Hiroshi Gotou, Michihiko Namba, Hidetoshi Fujii, Amika Sagara, Kazukiyo Nagai, Tomoyuki Shimada, Shigeyuki Harada, Yoshiki Yanagawa, Akiyoshi Sabu, Yuusuke Koizuka, Masayuki Fukuoka, Takuya Yamazaki
  • Publication number: 20180346326
    Abstract: The disclosure relates to a method for manufacturing recessed micromechanical structures in a MEMS device wafer. First vertical trenches in the device wafer define the horizontal dimensions of both level and recessed structures. The horizontal face of the device wafer and the vertical sidewalls of the first vertical trenches are then covered with a self-supporting etching mask which is made of a self-supporting mask material, which is sufficiently rigid to remain standing vertically in the location where it was deposited even as the sidewall upon which it was deposited is etched away. Recess trenches are then etched under the protection of the self-supporting mask. The method allows a spike-preventing aggressive etch to be used for forming the recess trenches, without harming the sidewalls in the first vertical trenches.
    Type: Application
    Filed: May 16, 2018
    Publication date: December 6, 2018
    Inventor: Hidetoshi FUJII
  • Patent number: 10125279
    Abstract: An ink including an organic solvent, a pigment, a polyurethane particle, and water is provided. The organic solvent includes at least one of 3-methoxy-1-butanol and 3-methoxy-1-propanol. The polyurethane particle has a particle diameter D50 of 50 nm or less.
    Type: Grant
    Filed: July 12, 2016
    Date of Patent: November 13, 2018
    Assignee: Ricoh Company, Ltd.
    Inventors: Hidetoshi Fujii, Amika Sagara