Abstract: The present invention provides a friction welding method capable of reducing the welding temperature and a friction welding method capable of obtaining a welded portion free of defects regardless the type of material. A frictional welding method in which one member is brought into contact with the other member and slides while a load is applied substantially perpendicularly to the interface to be welded, the frictional welding method comprising: a first step in which frictional welding is carried out by setting a pressure calculated from the area and the load of the interface to be welded to be equal to or higher than the yield stress and the tensile strength of one member and/or the other member at a desired welding temperature; and a second step in which frictional welding is carried out by lowering the load, wherein the first step and the second step are continuously carried out.

Abstract: The friction stir welding tool member according to the present invention is made of a silicon nitride sintered body, wherein the silicon nitride sintered body contains 15% by mass or less of additive components except silicon nitride in such a manner that the additive components include at least one element selected from lanthanoid elements and at least one element selected from Mg, Ti, Hf, and Mo. In addition, it is preferable that the additive components further include at least one element selected from Al, Si, and C. According to the above-described configuration, a friction stir welding tool member having an excellent durability can be provided.

Abstract: A method for manufacturing recessed micromechanical structures in a wafer. A first etching mask and a second etching mask are patterned on the horizontal face of the wafer. The second etching mask defines at least one recess area and the first etching mask defines at least one etch-control area within the at least one recess area. The placement, number and dimensions of the etch-control areas influence the vertical etch rate of the recessed structure. Adjacent structures can be etched to different recess depths by selecting suitable etch-control areas.

Abstract: Provided are a long-life and inexpensive friction stir welding tool that is not dependent on the mode of friction stir welding or the type of material to be welded, and a friction stir welding method using the friction stir welding tool. The friction stir welding tool comprises a body portion having a shoulder portion, and a probe portion disposed on a bottom surface of the body portion, and is characterized in that the probe portion is spherical-crown shaped. Preferably, the shoulder portion is flat or convex, and preferably the hardness of the shoulder portion is greater than the hardness of the probe portion.

Abstract: A low-temperature joining method effectively suppresses reductions in the mechanical properties of a junction of various types of high-tensile steel or aluminum, and of a heat-affected zone; and produces a joint structure. A method for joining two metal materials by forming a joint interface in which the two metal materials face each other at a joint portion and plunge a rotation tool caused to rotate at a prescribed speed into the joint, the method for low-temperature joining of metal materials characterized in that the peripheral velocity of the outermost periphery of the rotation tool is set to 51 mm/s or less, whereby the recrystallization temperature inherent to the metal materials is reduced by introducing a large strain to the joint, and recrystallized grains are generated at the joint interface by setting the joining temperature to less than the recrystallization temperature inherent to the metal materials.

Abstract: An inkjet printing method including: discharging an ink onto a print medium, where the ink contains a polymerizable group-containing dispersion and a polymerization initiator; after the discharging, irradiating the ink with active energy rays, where the ink is discharged on the print medium; and after the irradiating, drying the ink with heat, where the ink is irradiated with the active energy rays.

Abstract: A linear friction welding method capable of accurately controlling a welding temperature and capable of lowering the welding temperature is provided. The present invention is a linear friction welding method comprising: a first step of forming a welded interface by bringing one member into contact with the other member; a second step of repeatedly sliding one member and the other member on the same locus and discharging flash from the welded interface in a state where pressure is applied substantially perpendicularly to the welded interface; and a third step of forming a welded surface by stopping the sliding and setting the pressure to be not less than the yield stress and not more than the tensile strength of one member and/or the other member at a desired welding temperature.

Abstract: To provide a solid phase welding method and a solid phase welding apparatus which are possible to accurately control the welding temperature, to lower the welding temperature and to achieve a solid phase welding of the metallic materials. The present invention provides a solid phase welding method for metallic materials comprising, a first step of forming an interface to be welded by abutting end portions of one material to be welded and the other material to be welded and applying a pressure in a direction substantially perpendicular to the interface to be welded, a second step of raising a temperature of the vicinity of the interface to be welded to a welding temperature by an external heating means, wherein the pressure is set to equal to or more than the yield strength of the one material to be welded and/or the other material to be welded at the welding temperature.

Abstract: An active-energy-ray-curable composition is provided that includes an active-energy-ray-polymerizable compound, an amine compound, and water. The active-energy-ray-polymerizable compound comprises resin particles having a 50% cumulative particle diameter (D50) of 5 nm or greater but 50 nm or less. The amine compound has a molecular weight of 118.0 or less and a boiling point of 120 degrees C. or higher. The proportion of the water in the active-energy-ray-curable composition is 50.0 percent by mass or greater.

Abstract: The disclosure relates to a method for manufacturing recessed micromechanical structures in a MEMS device wafer. First vertical trenches in the device wafer define the horizontal dimensions of both level and recessed structures. The horizontal face of the device wafer and the vertical sidewalls of the first vertical trenches are then covered with a self-supporting etching mask which is made of a self-supporting mask material, which is sufficiently rigid to remain standing vertically in the location where it was deposited even as the sidewall upon which it was deposited is etched away. Recess trenches are then etched under the protection of the self-supporting mask. The method allows a spike-preventing aggressive etch to be used for forming the recess trenches, without harming the sidewalls in the first vertical trenches.

Abstract: A pressure receiving surface inclined to a rotation axis is provided on the side surface of a stir probe of a rotating tool. The pressure receiving surface includes a pressure receiving region which is always perpendicular to a rotation tangential direction in a cross section perpendicular to the rotation axis. In friction stir processing, the stir probe is caused to rotate in a rotation direction B in which the normal direction of the pressure receiving surface is positive. According to this kind of rotating tool, as it has no shoulder, a joint width does not increase even when a stirring region is deep, and also, a plastic flow in a rotation direction is generated by a pressure receiving surface, so that it is possible to reduce the proportion of the plastic flow in the rotation axis direction, and thus possible to suppress an occurrence of burr.

Abstract: An active energy ray-curable composition is provided which comprises a polymerizable monomer, a polysilane compound containing a phenyl group in a repeating unit, and a photopolymerization initiator.

Abstract: The disclosure relates to a method for manufacturing recessed micromechanical structures in a MEMS device wafer. First vertical trenches in the device wafer define the horizontal dimensions of both level and recessed structures. The horizontal face of the device wafer and the vertical sidewalls of the first vertical trenches are then covered with a self-supporting etching mask which is made of a self-supporting mask material, which is sufficiently rigid to remain standing vertically in the location where it was deposited even as the sidewall upon which it was deposited is etched away. Recess trenches are then etched under the protection of the self-supporting mask. The method allows a spike-preventing aggressive etch to be used for forming the recess trenches, without harming the sidewalls in the first vertical trenches.

Abstract: An active-energy-ray-polymerizable initiator having a structure represented by the following general formula (1) is provided. In general formula (1), L1 represents —C(?O)—O— (binding to L2 side) or —O—, L2 represents —O(CH2)p-(binding to L1 side), —(OC2H4)n-(binding to L1 side), or —(OC3H6)m-(binding to L1 side), where p represents an integer of 2 to 16, n represents an integer of 2 to 12, and m represents 2 or 3, L3 represents a direct binding or —NH—, L4 represents —OC2H4-(binding to L3 side) or —(OC2H4)2-(binding to L3 side), and R represents —H or —CH3.

Abstract: An ink is provided. The ink includes a colorant, an organic solvent, a resin particle including an anionic urethane resin, and an organic amine compound having a boiling point in the range of from 120° C. to 200° C. and a molecular weight of 100 or less, and water, and the mass ratio of the organic amine compound to the resin particle is in the range of from 0.01 to 1.00.

Abstract: A method for manufacturing recessed micromechanical structures in a wafer. A first etching mask and a second etching mask are patterned on the horizontal face of the wafer. The second etching mask defines at least one recess area and the first etching mask defines at least one etch-control area within the at least one recess area. The placement, number and dimensions of the etch-control areas influence the vertical etch rate of the recessed structure. Adjacent structures can be etched to different recess depths by selecting suitable etch-control areas.

Abstract: A curable composition comprises water, a polysilane compound having a phenyl group, and at least one of a polymerizable particle and a polymerizable monomer.

Abstract: The present invention provides a friction welding method capable of reducing the welding temperature and a friction welding method capable of obtaining a welded portion free of defects regardless the type of material. A frictional welding method in which one member is brought into contact with the other member and slides while a load is applied substantially perpendicularly to the interface to be welded, the frictional welding method comprising: a first step in which frictional welding is carried out by setting a pressure calculated from the area and the load of the interface to be welded to be equal to or higher than the yield stress and the tensile strength of one member and/or the other member at a desired welding temperature; and a second step in which frictional welding is carried out by lowering the load, wherein the first step and the second step are continuously carried out.

Abstract: Member for an image forming apparatus having an outer layer that includes polyethylene glycol and a polyether ester amide having therein a structural unit of polyethylene glycol.

Abstract: An active energy ray-curable composition is provided which comprises a polymerizable monomer, a polysilane compound containing a phenyl group in a repeating unit, and a photopolymerization initiator.