Patents by Inventor Hidetoshi Koike

Hidetoshi Koike has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing a trench isolation having round corners
    Patent number: 5578518
    Abstract: A semiconductor device comprises a semiconductor substrate having a major surface, a trench device isolation region having a trench selectively formed to define at least one island region in the major surface of the semiconductor substrate and a filler insulatively formed within the trench, an elongated gate electrode insulatively formed over a central portion of the island region so that each of its both ends which are opposed to each other in the direction of its length overlaps the trench device isolation region, and source and drain regions formed within the island region on the both sides of the gate electrode. The surface of the trench device isolation region is formed lower than the major surface of the semiconductor substrate.
    Type: Grant
    Filed: December 15, 1994
    Date of Patent: November 26, 1996
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hidetoshi Koike, Kazunari Ishimaru, Hiroshi Gojohbori, Fumitomo Matsuoka