Patents by Inventor Hideyuki Kazumi
Hideyuki Kazumi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20100258723Abstract: In a scanning electron microscope, an optimum scanning method for reducing the amount of deflection of a primary electron beam and secondary electrons is determined to acquire stable images. An energy filter is used to discriminate between energy levels. The change in yield of obtained electrons is used to measure the variation in specimen potential. The time constant of charging created during electron beam irradiation is extracted. The scanning method is optimized based on the extracted time constant to reduce the distortion and magnification variation that appear in a SEM image.Type: ApplicationFiled: June 25, 2010Publication date: October 14, 2010Applicant: Hitachi High-Technologies CorporationInventors: Akira IKEGAMI, Hideyuki KAZUMI, Koichiro TAKEUCHI, Atsushi KOBARU, Seiko OOMORI
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Patent number: 7763852Abstract: In a scanning electron microscope, an optimum scanning method for reducing the amount of deflection of a primary electron beam and secondary electrons is determined to acquire stable images. An energy filter is used to discriminate between energy levels. The change in yield of obtained electrons is used to measure the variation in specimen potential. The time constant of charging created during electron beam irradiation is extracted. The scanning method is optimized based on the extracted time constant to reduce the distortion and magnification variation that appear in a SEM image.Type: GrantFiled: November 7, 2007Date of Patent: July 27, 2010Assignee: Hitachi High-Technologies CorporationInventors: Akira Ikegami, Hideyuki Kazumi, Koichiro Takeuchi, Atsushi Kobaru, Seiko Oomori
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Publication number: 20090272899Abstract: An object of the present invention is to provide a method and apparatus for measuring a potential on a surface of a sample using a charged particle beam while restraining a change in the potential on the sample induced by the charged particle beam application, or detecting a compensation value for a change in a condition for the apparatus caused by the sample being electrically charged. In order to achieve the above object, the present invention provides a method and apparatus for applying a voltage to a sample so that a charged particle beam does not reach the sample (hereinafter, this may be referred to as “mirror state”) in a state in which the charged particle beam is applied toward the sample, and detecting information relating to a potential on the sample using signals obtained by that voltage application.Type: ApplicationFiled: December 18, 2007Publication date: November 5, 2009Applicant: Hitachi High-Technologies CorporationInventors: Minoru YAMAZAKI, Akira Ikegami, Hideyuki Kazumi, Osamu Nasu
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Publication number: 20090224170Abstract: An object of the present invention is to provide a scanning electron microscope suitable for monitoring apparatus conditions of the microscope itself, irrespective of the presence of charge-up, specimen inclination, and the like. In order to achieve the object, proposed is a scanning electron microscope including a function to monitor the apparatus conditions on the basis of information obtained with an electron beam reflected before reaching a specimen. Specifically, for example, while applying a negative voltage to the specimen to reflect the electron beam before the electron beam reaches the specimen, and simultaneously supplying a predetermined signal to a deflector for alignment, the scanning electron microscope monitors changes of the detected positions of the reflected electrons of the electron beam. If the above-mentioned predetermined signal is under the condition where an alignment is properly performed, the changes of the detected positions of the electrons reflect deviation of an axis.Type: ApplicationFiled: February 25, 2009Publication date: September 10, 2009Inventors: Minoru YAMAZAKI, Akira Ikegami, Hideyuki Kazumi, Manabu Yano, Kazunari Asao, Takeshi Mizuno, Yuki Ojima
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Publication number: 20090039264Abstract: Disclosed herein are a method for applying, while a charged particle beam is in a state being irradiated toward the sample, a voltage to the sample so that the charged particle beam does not reach the sample (hereafter such state may be referred to as a mirror state) and detecting information on a potential of a sample using a signal obtained then, and a device for automatically adjusting conditions of the device based on the result of measuring.Type: ApplicationFiled: August 8, 2008Publication date: February 12, 2009Inventors: Akira IKEGAMI, Minoru Yamazaki, Hideyuki Kazumi, Koichiro Takeuchi, Hisaya Murakoshi
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Patent number: 7442651Abstract: An etching technique capable of applying etching at high selectivity to a transition metal element-containing electrode material layer which is formed on or above a dielectric material layer made of a high-dielectric-constant or “high-k” insulator is provided. To this end, place a workpiece on a lower electrode located within a vacuum processing vessel. The workpiece has a multilayer structure of an electrode material layer which contains therein a transition metal element and a dielectric material layer made of high-k insulator. Then, while introducing a processing gas into the vacuum processing vessel, high-frequency power is applied to inside of the vacuum processing vessel, thereby performing plasma conversion of the introduced processing gas so that the workpiece is etched at its surface. When etching the electrode material layer, an HCl gas is supplied as the processing gas.Type: GrantFiled: February 16, 2006Date of Patent: October 28, 2008Assignee: Hitachi High-Technologies CorporationInventors: Masahito Mori, Toshiaki Nishida, Naoshi Itabashi, Motohiko Yoshigai, Hideyuki Kazumi, Kazutami Tago
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Publication number: 20080116375Abstract: In a scanning electron microscope, an optimum scanning method for reducing the amount of deflection of a primary electron beam and secondary electrons is determined to acquire stable images. An energy filter is used to discriminate between energy levels. The change in yield of obtained electrons is used to measure the variation in specimen potential. The time constant of charging created during electron beam irradiation is extracted. The scanning method is optimized based on the extracted time constant to reduce the distortion and magnification variation that appear in a SEM image.Type: ApplicationFiled: November 7, 2007Publication date: May 22, 2008Applicant: Hitachi High-Technologies CorporationInventors: Akira Ikegami, Hideyuki Kazumi, Koichiro Takeuchi, Atsushi Kobaru, Seiko Oomori
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Publication number: 20070134922Abstract: An etching technique capable of applying etching at high selectivity to a transition metal element-containing electrode material layer which is formed on or above a dielectric material layer made of a high-dielectric-constant or “high-k” insulator is provided. To this end, place a workpiece on a lower electrode located within a vacuum processing vessel. The workpiece has a multilayer structure of an electrode material layer which contains therein a transition metal element and a dielectric material layer made of high-k insulator. Then, while introducing a processing gas into the vacuum processing vessel, high-frequency power is applied to inside of the vacuum processing vessel, thereby performing plasma conversion of the introduced processing gas so that the workpiece is etched at its surface. When etching the electrode material layer, an HCl gas is supplied as the processing gas.Type: ApplicationFiled: February 16, 2006Publication date: June 14, 2007Inventors: Masahito Mori, Toshiaki Nishida, Naoshi Itabashi, Motohiko Yoshigai, Hideyuki Kazumi, Kazutami Tago
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Publication number: 20060283550Abstract: A plasma processing apparatus for generating highly-uniform and stable plasma. In an apparatus for generating plasma by using a ? wave, concerning a method for rotating the ? wave in terms of time, a plurality of (larger than two and smaller than four) waveguides are used, then forming an angle between the respective waveguides, and setting a phase difference between respective electric fields therein. This configuration allows introduction of the circularly polarized wave into a processing chamber. At this time, there are provided configuration components such as a waveguide locating method, a unit therefor, a ?-wave merging box, and a reflective-wave control unit using a reflection control chamber.Type: ApplicationFiled: June 6, 2006Publication date: December 21, 2006Inventors: Hideyuki Kazumi, Akihiro Sano, Akitaka Makino, Hitoshi Tamura, Masamichi Sakaguchi
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Patent number: 7049243Abstract: A plasma processing method for etching a sample having a gate oxide film which generates a plasma in a vacuum chamber using electromagnetic waves, applies an rf bias power to the sample, turns off the rf bias power before a charged voltage of the sample reaches a breakdown voltage of the gate oxide film, turns on the rf bias power after the charged voltage of the sample has substantially dropped and repeats the turning on and off of the rf bias power to process the sample. The off-time is set at least longer than the on-time, and the plasma is generated by continuously supplying power to enable generation of the plasma during the repeated turning on and off of the rf bias power.Type: GrantFiled: January 12, 2004Date of Patent: May 23, 2006Assignee: Hitachi, Ltd.Inventors: Tetsuo Ono, Yasuhiro Nishimori, Takashi Sato, Naoyuki Kofuji, Masaru Izawa, Yasushi Goto, Ken Yoshioka, Hideyuki Kazumi, Tatsumi Mizutani, Tokuo Kure, Masayuki Kojima, Takafumi Tokunaga, Motohiko Yoshigai
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Patent number: 6919274Abstract: An apparatus for performing a plasma-etching of a LSI device including a Cu interconnection, a low-k film, and a diffusion prevention film has a treatment chamber, into which an etching gas is introduced, and a support table which is equipped with electrodes and on which said LSI device is placed. In this apparatus, the etching gasses are turned into plasma by supplying radio frequency power to electrodes provided within the treatment chamber, so that the LSI device is etched with ions of the plasma. In this apparatus, a sulfur-containing gas and a fluorine-containing gas are mixed to the etching gasses, so that the diffusion prevention film is selectively etched against the low-k film.Type: GrantFiled: February 19, 2004Date of Patent: July 19, 2005Assignee: Hitachi High-Technologies CorporationInventors: Hideyuki Kazumi, Tsuyoshi Yoshida, Eiji Ikegami, Kouichi Nakaune, Masamichi Sakaguchi, Yasuyuki Miyamoto, Akihiro Sano
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Publication number: 20050126711Abstract: A plasma processing apparatus capable of extending a period of maintenance and continuing stable processing is provided. The apparatus comprises a vacuum reactor 1 having a processing gas introduction device and a evacuating device, a shield electrode 14 formed on the outer circumferential wall of the vacuum reactor, and a specimen placing device 101 having an antenna electrode 51 for radiating high frequency power into the vacuum reactor, in which first high frequency power is supplied to the antenna electrode, and high frequency power at a frequency lower than that of the first high frequency power is supplied to the antenna electrode 51 and the shield electrode 15.Type: ApplicationFiled: January 27, 2004Publication date: June 16, 2005Inventors: Hideyuki Kazumi, Kenji Maeda, Tsuyoshi Yoshida, Masatoshi Oyama
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Publication number: 20050026431Abstract: An apparatus for performing a plasma-etching of a LSI device including a Cu interconnection, a low-k film, and a diffusion prevention film has a treatment chamber, into which an etching gas is introduced, and a support table which is equipped with electrodes and on which said LSI device is placed. In this apparatus, the etching gasses are turned into plasma by supplying radio frequency power to electrodes provided within the treatment chamber, so that the LSI device is etched with ions of the plasma. In this apparatus, a sulfur-containing gas and a fluorine-containing gas are mixed to the etching gasses, so that the diffusion prevention film is selectively etched against the low-k film.Type: ApplicationFiled: February 19, 2004Publication date: February 3, 2005Inventors: Hideyuki Kazumi, Tsuyoshi Yoshida, Eiji Ikegami, Kouichi Nakaune, Masamichi Sakaguchi, Yasuyuki Miyamoto, Akihiro Sano
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Patent number: 6846363Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.Type: GrantFiled: May 7, 2002Date of Patent: January 25, 2005Assignee: Hitachi, Ltd.Inventors: Hideyuki Kazumi, Tsutomu Tetsuka, Ryoji Nishio, Masatsugu Arai, Ken Yoshioka, Tsunehiko Tsubone, Akira Doi, Manabu Edamura, Kenji Maeda, Saburo Kanai
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Publication number: 20040259361Abstract: A plasma processing method for etching a sample having a gate oxide film which generates a plasma in a vacuum chamber using electromagnetic waves, applies an rf bias power to the sample, turns off the rf bias power before a charged voltage of the sample reaches a breakdown voltage of the gate oxide film, turns on the rf bias power after the charged voltage of the sample has substantially dropped and repeats the turning on and off of the rf bias power to process the sample. The off-time is set at least longer than the on-time, and the plasma is generated by continuously supplying power to enable generation of the plasma during the repeated turning on and off of the rf bias power.Type: ApplicationFiled: January 12, 2004Publication date: December 23, 2004Inventors: Tetsuo Ono, Yasuhiro Nishimori, Takashi Sato, Naoyuki Kofuji, Masaru Izawa, Yasushi Goto, Ken Yoshioka, Hideyuki Kazumi, Tatsumi Mizutani, Tokuo Kure, Masayuki Kojima, Takafumi Tokunaga, Motohiko Yoshigai
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Patent number: 6833051Abstract: A plasma processing apparatus includes a vacuum chamber having a structure that surrounds a space where plasma is generated, a sample stage disposed in the chamber on which a sample to be processed is placed and coil antenna providing an electric field to the space. The structure has a non-conductive member surrounding the space and a conductive member covering the non-conductive member, both of which are disposed between the antenna and the space. The conductive member is electrically floated at least when the plasma is generated.Type: GrantFiled: May 7, 2002Date of Patent: December 21, 2004Assignee: Hitachi, Ltd.Inventors: Hideyuki Kazumi, Tsutomu Tetsuka, Ryoji Nishio, Masatsugu Arai, Ken Yoshioka, Tsunehiko Tsubone, Akira Doi, Manabu Edamura, Kenji Maeda, Saburo Kanai
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Patent number: 6793768Abstract: A plasma-assisted processing apparatus has a vacuum vessel defining a processing chamber, a gas supply line for carrying gases into the processing chamber, a workpiece support disposed in the processing chamber and serving as an electrode, a disk antenna for radiating a high-frequency wave having a frequency in the VHF or the UHF band into the processing chamber, a high-frequency waveguide for guiding a high-frequency wave to the disk antenna, and a window made of a dielectric material isolating the disk antenna from the processing chamber. A conductive ring is disposed between the disk antenna and the window such that one surface thereof is in contact with a peripheral part of the disk antenna.Type: GrantFiled: February 4, 2002Date of Patent: September 21, 2004Assignee: Hitachi, Ltd.Inventors: Hideyuki Kazumi, Manabu Edamura, Kazuyuki Ikenaga, Atsushi Ootake
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Patent number: 6756737Abstract: The main purpose of the present invention is to suppress deposition of byproducts on an inner wall of a vacuum chamber during wafer processing using plasma generated by an inductive coupling antenna and an electrostatic capacitive coupling antenna which are connected in series at a connection point. Deposition of byproducts on the inner wall of the vacuum chamber can be suppressed by grounding the connection point of the inductive coupling antenna and the electrostatic capacitive coupling antenna via a variable-impedance load and varying an impedance of the variable-impedance load, thereby controlling a ratio of plasma produced in the chamber by electrostatic capacitive coupling discharge.Type: GrantFiled: May 14, 2002Date of Patent: June 29, 2004Assignee: Hitachi, Ltd.Inventors: Akira Doi, Ken Yoshioka, Manabu Edamura, Hideyuki Kazumi, Saburou Kanai, Tsutomu Tetsuka, Masatsugu Arai, Kenji Maeda, Tsunehiko Tsubone
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Patent number: 6755935Abstract: A plasma processing apparatus has a vacuum vessel, a processing chamber arranged in the vacuum vessel and supplied with gas, a support electrode arranged in the processing chamber to support an object to be processed, a radio frequency providing unit for supplying a radio frequency in UHF or VHF band, and a magnetic field generating unit for generating a magnetic field in the processing chamber, wherein the radio frequency providing unit includes an antenna having a groove or step formed in its surface opposing the process object, whereby plasma of high density and high uniformity can be generated in a wide parameter region.Type: GrantFiled: February 27, 2001Date of Patent: June 29, 2004Assignee: Hitachi, Ltd.Inventors: Hideyuki Kazumi, Ichiro Sasaki, Kenji Maeda, Tsutomu Tetsuka, Hironobu Kawahara
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Patent number: RE39895Abstract: To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other and selectively obtaining desired dissociated species.Type: GrantFiled: March 8, 2002Date of Patent: October 23, 2007Assignee: Renesas Technology Corp.Inventors: Takafumi Tokunaga, Sadayuki Okudaira, Tatsumi Mizutani, Kazutami Tago, Hideyuki Kazumi, Ken Yoshioka