Patents by Inventor Hideyuki Kazumi
Hideyuki Kazumi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 6677244Abstract: A plasma processing method for etching a sample having a gate oxide film includes generating a plasma in a vacuum chamber using electromagnetic waves, applying an rf bias power to the sample, turning off the rf bias power before a charged voltage of the sample reaches a breakdown voltage, turning on the rf bias power after the charged voltage of the sample has substantially dropped, and repeating the turning on and off of the rf bias power to process the sample. The off-time is set at least longer than the on-time.Type: GrantFiled: May 1, 2002Date of Patent: January 13, 2004Assignee: Hitachi, Ltd.Inventors: Tetsuo Ono, Yasuhiro Nishimori, Takashi Sato, Naoyuki Kofuji, Masaru Izawa, Yasushi Goto, Ken Yoshioka, Hideyuki Kazumi, Tatsumi Mizutani, Tokuo Kure, Masayuki Kojima, Takafumi Tokunaga, Motohiko Yoshigai
-
Patent number: 6499424Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.Type: GrantFiled: July 23, 2001Date of Patent: December 31, 2002Assignee: Hitachi, Ltd.Inventors: Hideyuki Kazumi, Tsutomu Tetsuka, Ryoji Nishio, Masatsugu Arai, Ken Yoshioka, Tsunehiko Tsubone, Akira Doi, Manabu Edamura, Kenji Maeda, Saburo Kanai
-
Patent number: 6492277Abstract: Electrical damage to semiconductor elements in the plasma etching thereof is suppressed. In processing of a fine pattern by plasma etching, the high frequency power supply to be applied to the specimen is turned off before the charge potential at a portion of the pattern reaches the breakdown voltage of the gate oxide film which is interconnected to said fine pattern, and then the high frequency power supply is turned on when the charge potential at the portion of the pattern drops substantially. This on and off control is effected in a repetitive mode of operation.Type: GrantFiled: September 10, 1999Date of Patent: December 10, 2002Assignee: Hitachi, Ltd.Inventors: Tetsuo Ono, Yasuhiro Nishimori, Takashi Sato, Naoyuki Kofuji, Masaru Izawa, Yasushi Goto, Ken Yoshioka, Hideyuki Kazumi, Tatsumi Mizutani, Tokuo Kure, Masayuki Kojima, Takafumi Tokunaga, Motohiko Yoshigai
-
Patent number: 6481370Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.Type: GrantFiled: December 8, 2000Date of Patent: November 19, 2002Assignee: Hitachi, Ltd.Inventors: Hideyuki Kazumi, Tsutomu Tetsuka, Ryoji Nishio, Masatsugu Arai, Ken Yoshioka, Tsunehiko Tsubone, Akira Doi, Manabu Edamura, Kenji Maeda, Saburo Kanai
-
Publication number: 20020134510Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.Type: ApplicationFiled: May 7, 2002Publication date: September 26, 2002Inventors: Hideyuki Kazumi, Tsutomu Tetsuka, Ryoji Nishio, Masatsugu Arai, Ken Yoshioka, Tsunehiko Tsubone, Akira Doi, Manabu Edamura, Kenji Maeda, Saburo Kanai
-
Publication number: 20020125828Abstract: The main purpose of the present invention is to suppress deposition of byproducts on an inner wall of a vacuum chamber during wafer processing using plasma generated by an inductive coupling antenna and an electrostatic capacitive coupling antenna which are connected in series at a connection point. Deposition of byproducts on the inner wall of the vacuum chamber can be suppressed by grounding the connection point of the inductive coupling antenna and the electrostatic capacitive coupling antenna via a variable-impedance load and varying an impedance of the variable-impedance load, thereby controlling a ratio of plasma produced in the chamber by electrostatic capacitive coupling discharge.Type: ApplicationFiled: May 14, 2002Publication date: September 12, 2002Inventors: Akira Doi, Ken Yoshioka, Manabu Edamura, Hideyuki Kazumi, Saburou Kanai, Tsutomu Tetsuka, Masatsugu Arai, Kenji Maeda, Tsunehiko Tsubone
-
Publication number: 20020124963Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.Type: ApplicationFiled: May 7, 2002Publication date: September 12, 2002Inventors: Hideyuki Kazumi, Tsutomu Tetsuka, Ryoji Nishio, Masatsugu Arai, Ken Yoshioka, Tsunehiko Tsubone, Akira Doi, Manabu Edamura, Kenji Maeda, Saburo Kanai
-
Publication number: 20020123229Abstract: A plasma processing method for etching a sample having a gate oxide film includes generating a plasma in a vacuum chamber using electromagnetic waves, applying an rf bias power to the sample, turning off the rf bias power before a charged voltage of the sample reaches a breakdown voltage, turning on the rf bias power after the charged voltage of the sample has substantially dropped, and repeating the turning on and off of the rf bias power to process the sample. The off-time is set at least longer than the on-time.Type: ApplicationFiled: May 1, 2002Publication date: September 5, 2002Inventors: Tetsuo Ono, Yasuhiro Nishimori, Takashi Sato, Naoyuki Kofuji, Masaru Izawa, Yasushi Goto, Ken Yoshioka, Hideyuki Kazumi, Tatsumi Mizutani, Tokuo Kure, Masayuki Kojima, Takafumi Tokunaga, Motohiko Yoshigai
-
Publication number: 20020104482Abstract: A plasma-assisted processing apparatus comprises: a vacuum vessel defining a processing chamber, a gas supply line for carrying gases into the processing chamber, a workpiece support for supporting a workpiece, disposed in the processing chamber and serving as an electrode, a disk antenna for radiating a high-frequency wave of a frequency in the VHF or the UHF band into the processing chamber, a high-frequency waveguide for guiding a high-frequency wave to the disk antenna, and a window of a dielectric material isolating the disk antenna from the processing chamber. A conductive ring is disposed between the disk antenna and the window such that its end surface is in contact with a peripheral part of the disk antenna.Type: ApplicationFiled: February 4, 2002Publication date: August 8, 2002Inventors: Hideyuki Kazumi, Manabu Edamura, Kazuyuki Ikenaga, Atsushi Ootake
-
Publication number: 20020084035Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.Type: ApplicationFiled: March 4, 2002Publication date: July 4, 2002Inventors: Hideyuki Kazumi, Tsutomu Tetsuka, Ryoji Nishio, Masatsugu Arai, Ken Yoshioka, Tsunehiko Tsubone, Akira Doi, Manabu Edamura, Kenji Maeda, Saburo Kanai
-
Patent number: 6388382Abstract: The main purpose of the present invention is to suppress deposition of byproducts on an inner wall of a vacuum chamber during wafer processing using plasma generated by an inductive coupling antenna and an electrostatic capacitive coupling antenna which are connected in series at a connection point. Deposition of byproducts on the inner wall of the vacuum chamber can be suppressed by grounding the connection point of the inductive coupling antenna and the electrostatic capacitive coupling antenna via a variable-impedance load and varying an impedance of the variable-impedance load, thereby controlling a ratio of plasma produced in the chamber by electrostatic capacitive coupling discharge.Type: GrantFiled: March 8, 2000Date of Patent: May 14, 2002Assignee: Hitachi, Ltd.Inventors: Akira Doi, Ken Yoshioka, Manabu Edamura, Hideyuki Kazumi, Saburou Kanai, Tsutomu Tetsuka, Masatsugu Arai, Kenji Maeda, Tsunehiko Tsubone
-
Patent number: 6388624Abstract: In a method of generating plasma by using a high frequency in VHF or UHF band and a magnetic field, a plasma processing apparatus has an antenna and an emitting port which are adapted to supply the high frequency in UHF or VHF band to a processing chamber and a magnetic field forming unit for forming a magnetic field in the processing chamber, wherein the ratio between the radius of the antenna and the effective length of the emitting port is 0.4 or more and 1.5 or less, whereby plasma of high density and high uniformity can be generated in a wide parameter region.Type: GrantFiled: March 2, 2001Date of Patent: May 14, 2002Assignee: Hitachi, Ltd.Inventors: Hideyuki Kazumi, Hironobu Kawahara
-
Publication number: 20010042595Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.Type: ApplicationFiled: July 23, 2001Publication date: November 22, 2001Inventors: Hideyuki Kazumi, Tsutomu Tetsuka, Ryoji Nishio, Masatsugu Arai, Ken Yoshioka, Tsunehiko Tsubone, Akira Doi, Manabu Edamura, Kenji Maeda, Saburo Kanai
-
Publication number: 20010040009Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.Type: ApplicationFiled: July 23, 2001Publication date: November 15, 2001Inventors: Hideyuki Kazumi, Tsutomu Tetsuka, Ryoji Nishio, Masatsugu Arai, Ken Yoshioka, Tsunehiko Tsubone, Akira Doi, Manabu Edamura, Kenji Maeda, Saburo Kanai
-
Publication number: 20010037861Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.Type: ApplicationFiled: July 23, 2001Publication date: November 8, 2001Inventors: Hideyuki Kazumi, Tsutomu Tetsuka, Ryoji Nishio, Masatsugu Arai, Ken Yoshioka, Tsunehiko Tsubone, Akira Doi, Manabu Edamura, Kenji Maeda, Saburo Kanai
-
Publication number: 20010037857Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.Type: ApplicationFiled: December 8, 2000Publication date: November 8, 2001Inventors: Hideyuki Kazumi, Tsutomu Tetsuka, Ryoji Nishio, Masatsugu Arai, Ken Yoshioka, Tsunehiko Tsubone, Akira Doi, Manabu Edamura, Kenji Maeda, Saburo Kanai
-
Patent number: 6309980Abstract: To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other and selectively obtaining desired dissociated species.Type: GrantFiled: May 4, 2000Date of Patent: October 30, 2001Assignee: Hitachi, Ltd.Inventors: Takafumi Tokunaga, Sadayuki Okudaira, Tatsumi Mizutani, Kazutami Tago, Hideyuki Kazumi, Ken Yoshioka
-
Publication number: 20010023663Abstract: A plasma processing apparatus has a vacuum vessel, a processing chamber arranged in the vacuum vessel and supplied with gas, a support electrode arranged in the processing chamber to support an object to be processed, a radio frequency providing unit for supplying a radio frequency in UHF or VHF band, and a magnetic field generating unit for generating a magnetic field in the processing chamber, wherein the radio frequency providing unit includes an antenna having a groove or step formed in its surface opposing the process object, whereby plasma of high density and high uniformity can be generated in a wide parameter region.Type: ApplicationFiled: February 27, 2001Publication date: September 27, 2001Inventors: Hideyuki Kazumi, Ichiro Sasaki, Kenji Maeda, Tsutomu Tetsuka, Hironobu Kawahara
-
Patent number: 6180019Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.Type: GrantFiled: November 26, 1997Date of Patent: January 30, 2001Assignee: Hitachi, Ltd.Inventors: Hideyuki Kazumi, Tsutomu Tetsuka, Ryoji Nishio, Masatsugu Arai, Ken Yoshioka, Tsunehiko Tsubone, Akira Doi, Manabu Edamura, Kenji Maeda, Saburo Kanai
-
Patent number: 6074958Abstract: To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other and selectively obtaining desired dissociated species.Type: GrantFiled: June 23, 1999Date of Patent: June 13, 2000Assignee: Hitachi, Ltd.Inventors: Takafumi Tokunaga, Sadayuki Okudaira, Tatsumi Mizutani, Kazutami Tago, Hideyuki Kazumi, Ken Yoshioka