Patents by Inventor Hideyuki Kazumi

Hideyuki Kazumi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5962347
    Abstract: To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other and selectively obtaining desired dissociated species.
    Type: Grant
    Filed: November 10, 1998
    Date of Patent: October 5, 1999
    Assignee: Hitachi, Ltd.
    Inventors: Takafumi Tokunaga, Sadayuki Okudaira, Tatsumi Mizutani, Kazutami Tago, Hideyuki Kazumi, Ken Yoshioka
  • Patent number: 5874013
    Abstract: To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other, and selectively obtaining desired dissociated species.
    Type: Grant
    Filed: May 15, 1997
    Date of Patent: February 23, 1999
    Assignee: Hitachi, Ltd.
    Inventors: Takafumi Tokunaga, Sadayuki Okudaira, Tatsumi Mizutani, Kazutami Tago, Hideyuki Kazumi, Ken Yoshioka