Abstract: Provided is a technique capable of more accurately measuring and outputting a flow rate according to an intended purpose, in a flow rate measurement device. A flow rate measurement device (1) for detecting a flow rate of measurement target fluid flowing through a main flow path (2) includes: a heater (113) configured to heat measurement target fluid; a plurality of temperature detectors (111, 112) that are arranged with the heater interposed in between in a flow direction of the measurement target fluid, and are configured to detect a temperature of the measurement target fluid; and a converter (133) configured to convert a difference in outputs of the plurality of temperature detectors into a heat flow rate or a heat quantity of measurement target fluid flowing through the main flow path.

Abstract: A method for manufacturing a photoelectric conversion device, that includes: forming a laminate structure of a substrate, a transparent electrode, an active layer produced by wet-coating, and a counter electrode, stacked in this order; and thereafter forming a cavity by: (a) pressing an adhesive material just against a defect formed on the surface of said counter electrode, and then peeling off said adhesive material together with said defect and the peripheral part thereof; or (b) sucking a defect formed on the surface of said counter electrode, so as to remove said defect and the peripheral part thereof, where said cavity penetrates through the counter electrode and unreached to the transparent electrode.

Abstract: A method of manufacturing a photoelectric conversion device of an embodiment includes: forming a layer on a substrate; and drying this layer. The layer contains a p-type semiconductor, an n-type semiconductor, and a compound represented by the following formula (1). The layer is dried under pressures of 100 Pa or less and substrate temperatures of 40 to 200° C.

Abstract: A photoelectric conversion device includes: an element substrate having a first electrode, a photoelectric conversion layer, and a second electrode, the photoelectric conversion layer being provided above the first electrode and performing charge separation by energy of irradiated light, and the second electrode being provided above the photoelectric conversion layer; a counter substrate facing the element substrate; and a sealing layer provided between the element substrate and the counter substrate. The element substrate, the counter substrate, and the sealing layer define a sealing region sealing the photoelectric conversion layer. The element substrate further has: an impurity detection layer in contact with the second electrode inside the sealing region and causing chemical reaction with an impurity containing at least one of oxygen and water; and a third electrode in contact with the impurity detection layer and extending to the outside of the sealing region.

Abstract: A photoelectric conversion device of an embodiment includes: a first photoelectric conversion part including a first transparent electrode, a first organic active layer, and a first counter electrode; and a second photoelectric conversion part including a second transparent electrode, a second organic active layer, and a second counter electrode, which are provided on a transparent substrate. A conductive layer is formed on a partial region, of the second transparent electrode, which is adjacent to the first transparent electrode. The first counter electrode and the second transparent electrode are electrically connected by a connection part including a groove formed from a surface of the second organic active layer to reach an inside of the conductive layer and a part of the first counter electrode filled in the groove.

Abstract: The present embodiments provide a photoelectric conversion device having a laminate structure of a substrate, a transparent electrode, an active layer, and a counter electrode, stacked in this order. In the device, a cavity is provided on the counter electrode-side. The cavity penetrates through the counter electrode and has an opening area larger in the counter electrode than in the active layer.

Abstract: A solar cell module according to an embodiment includes: a light transmissive first substrate; a second substrate; at least one cell array disposed between the first substrate and the second substrate, the cell array including a plurality of cells arranged, each of the cells including a first electrode disposed on the first substrate, an organic photoelectric conversion film disposed on the first electrode, and a second electrode disposed on the organic photoelectric conversion film; a plurality of light transmissive partition walls disposed at portions on the first substrate, the portions being located between adjacent ones of the cells and at both end portions of the cell array; and a first resin film disposed between the second substrate and each of the cells between adjacent ones of the partition walls, the cells being connected in series.

Abstract: A photoelectric conversion device of an embodiment includes: a first photoelectric conversion part including a first transparent electrode provided on a transparent substrate, a first active layer, and a first counter electrode; and a second photoelectric conversion part including a second transparent electrode, a second active layer, and a second counter electrode. A conductive layer containing noble metal as a main component is formed on a partial region of the second transparent electrode, and a fine particle layer having a stack of fine particles is formed on the conductive layer. The first counter electrode and the second transparent electrode are electrically connected by a connection part having a scribe groove penetrating through the fine particle layer from the second active layer and exposing a surface of the conductive layer, and a conductive layer having a part of the first counter electrode filled in the scribe groove.

Abstract: A photoelectric conversion element includes: a substrate having an element formation surface; a first electrode provided on the element formation surface and extending along one direction of the element formation surface up to an end portion of the element formation surface; a photoelectric conversion layer provided above the first electrode and including a first region having a first thickness and a second region extending from an end portion of the first region up to an end portion of the first electrode and having a second thickness larger than the first thickness; and a second electrode provided above the first and second regions and extending up to an end portion of the photoelectric conversion layer.

Abstract: In accordance with one embodiment, there is provided a photovoltaic cell module including a plurality of photovoltaic cell structures including a hole transport layer and an electron transport layer which are disposed on a common photoelectric conversion layer so that electromotive force polarities are alternately different, wherein the photovoltaic cell structures are electrically connected in series.

Abstract: A solar cell includes a substrate and a stacked body. The substrate includes an upper surface. The stacked body includes a lower electrode, a photoelectric conversion film, and an upper electrode. The lower electrode is provided on the upper surface. The photoelectric conversion film is provided on the lower electrode. The upper electrode is provided on the photoelectric conversion film. The stacked body includes a first region and a second region. The first region includes a foreign matter between the lower electrode and the photoelectric conversion film. The second region is without the foreign matter. A distance between an end of the foreign matter in a first direction parallel with the upper surface and the upper electrode in a second direction intersecting the upper surface is greater than a distance in the second direction between the lower electrode and the upper electrode in the second region.

Abstract: A flow measurement device includes a flow sensor that senses a flow rate of a measurement target fluid flowing through a main channel, a characteristic-value obtaining unit that includes a heater heating the target fluid and a temperature sensor sensing a temperature of the target fluid, and obtains a characteristic value of the target fluid, and a flow rate correction unit that corrects a flow rate of the target fluid calculated based on a sensing signal from the flow sensor using the characteristic value of the target fluid obtained by the characteristic-value obtaining unit. The heater and the temperature sensor are arranged parallel to each other in a direction orthogonal to a flow direction of the target fluid. The characteristic-value obtaining unit obtains the characteristic value based on a difference between the temperatures of the target fluid sensed by the temperature sensor before and after the heater temperature is changed.

Abstract: A photoelectric conversion device of an embodiment includes: a first photoelectric conversion part including a first transparent electrode, a first organic active layer, and a first counter electrode; and a second photoelectric conversion part including a second transparent electrode, a second organic active layer, and a second counter electrode, which are provided on a transparent substrate. A conductive layer is formed on a partial region, of the second transparent electrode, which is adjacent to the first transparent electrode. The first counter electrode and the second transparent electrode are electrically connected by a connection part including a groove formed from a surface of the second organic active layer to reach an inside of the conductive layer and a part of the first counter electrode filled in the groove.

Abstract: A photoelectric conversion device of an embodiment includes: a first photoelectric conversion part including a first transparent electrode, a first organic active layer, and a first counter electrode; and a second photoelectric conversion part including a second transparent electrode, a second organic active layer, and a second counter electrode, which are provided on a transparent substrate. A conductive layer is formed on a partial region, of the second transparent electrode, which is adjacent to the first transparent electrode. The first counter electrode and the second transparent electrode are electrically connected by a connection part including a groove formed from a surface of the second organic active layer to reach an inside of the conductive layer and a part of the first counter electrode filled in the groove.

Abstract: A method of manufacturing a photoelectric conversion device of an embodiment includes: forming a layer on a substrate; and drying this layer. The layer contains a p-type semiconductor, an n-type semiconductor, and a compound represented by the following formula (1). The layer is dried under pressures of 100 Pa or less and substrate temperatures of 40 to 200° C.

Abstract: In accordance with one embodiment, there is provided a photovoltaic cell module including a plurality of photovoltaic cell structures including a hole transport layer and an electron transport layer which are disposed on a common photoelectric conversion layer so that electromotive force polarities are alternately different, wherein the photovoltaic cell structures are electrically connected in series.

Abstract: A photoelectric conversion material dispersion liquid of an embodiment includes: perovskite crystal particles having a composition represented as ABX3, where A is a monovalent cation of an amine compound, B is a divalent cation of a metal element, and X is a monovalent anion of a halogen element, and having an average particle diameter of not less than 10 nm nor more than 10000 nm; and a dispersion medium which is composed of a poor solvent to the perovskite crystal particles, and in which the perovskite crystal particles are dispersed.

Abstract: A photoelectric conversion device includes: an element substrate having a first electrode, a photoelectric conversion layer, and a second electrode, the photoelectric conversion layer being provided above the first electrode and performing charge separation by energy of irradiated light, and the second electrode being provided above the photoelectric conversion layer; a counter substrate facing the element substrate; and a sealing layer provided between the element substrate and the counter substrate. The element substrate, the counter substrate, and the sealing layer define a sealing region sealing the photoelectric conversion layer. The element substrate further has: an impurity detection layer in contact with the second electrode inside the sealing region and causing chemical reaction with an impurity containing at least one of oxygen and water; and a third electrode in contact with the impurity detection layer and extending to the outside of the sealing region.

Abstract: According to one embodiment, a photoelectric conversion element includes a first interconnect, a second interconnect, a photoelectric conversion layer and an insulating layer. The second interconnect is separated from the first interconnect. The photoelectric conversion layer is provided between the first interconnect and the second interconnect. The insulating layer is arranged with the first interconnect. A face formed by the first interconnect and the insulating layer is substantially flat. The face contacts the photoelectric conversion layer.

Abstract: A method of manufacturing a photoelectric conversion device of an embodiment includes: forming a layer on a substrate; and drying this layer. The layer contains a p-type semiconductor, an n-type semiconductor, and a compound represented by the following formula (1). The layer is dried under pressures of 100 Pa or less and substrate temperatures of 40 to 200° C.