Abstract: There is provided a method of forming a boron film on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr). The boron film is formed on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr).

Abstract: There is provided a method of forming a boron film on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr). The boron film is formed on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr).

Abstract: Provided is a method for forming a silicon nitride film on a substrate accommodated in a processing container. The method includes: supplying a processing gas including a silane-based gas, nitrogen gas, and hydrogen gas or ammonia gas to the processing container; forming the silicon nitride film on the substrate by exciting the processing gas to generate plasma and performing a plasma processing by the plasma; and applying a bias electric field to a part of the silicon nitride film by intermittently performing an ON/OFF control of a high frequency power source during or after the forming of the silicon nitride film.

Abstract: Functional groups on the outermost surface of an amorphous hydrocarbon film are substituted. The amorphous hydrocarbon film is formed on a silicon substrate Sub, which is coated with a low-k film. A heat treatment is performed on the amorphous hydrocarbon film in a non-silane gas atmosphere. Next, a heat treatment is performed on the amorphous hydrocarbon film in a silane gas atmosphere immediately after the heat treatment in a non-silane gas atmosphere. After the heat treatment, a film, such as a hard mask, is formed.

Abstract: A pattern-forming method for forming a predetermined pattern serving as a mask when etching film on a substrate includes the steps of: an organic film pattern-forming step for forming an organic film pattern on a film to be processed; forming a silicon nitride film on the organic film pattern; etching the silicon nitride film so that the silicon nitride film remains only on the lateral wall sections of the organic film pattern; and removing the organic film, thereby forming the predetermined silicon nitride film pattern on the film to be processed on a substrate. With the temperature of the substrate maintained at no more than 100° C., the film-forming step excites a processings gas and generates a plasma, performs plasma processing with the plasma, and forms a silicon nitride film having stress of no more than 100 MPa.

Abstract: An amorphous carbon film, which has excellent etching resistance and is capable of reducing reflectance when a resist film is exposed to light, is form. A method for manufacturing a semiconductor device includes forming an object film to be etched on a wafer, supplying a process gas containing a CO gas and an N2 gas into a processing container, forming an amorphous carbon nitride film from the supplied CO gas and N2 gas, forming a silicon oxide film on the amorphous carbon nitride film, forming an ArF resist film on the silicon oxide film, patterning the ArF resist film, etching the silicon oxide film by using the ArF resist film as a mask, etching the amorphous carbon nitride film by using the silicon oxide film as a mask, and etching the object film to be etched by using the amorphous carbon nitride film as a mask.

Abstract: A pattern-forming method for forming a predetermined pattern serving as a mask when etching film on a substrate includes the steps of: an organic film pattern-forming step for forming an organic film pattern on a film to be processed; forming a silicon nitride film on the organic film pattern; etching the silicon nitride film so that the silicon nitride film remains only on the lateral wall sections of the organic film pattern; and removing the organic film, thereby forming the predetermined silicon nitride film pattern on the film to be processed on a substrate. With the temperature of the substrate maintained at no more than 100° C., the film-forming step excites a processings gas and generates a plasma, performs plasma processing with the plasma, and forms a silicon nitride film having stress of no more than 100 MPa.

Abstract: A sealing film forming method is capable of forming a sealing film having high moisture permeability resistance in a shorter time and at lower cost. The sealing film forming method for forming a sealing film 13 that seals an EL device 12 includes forming a first inorganic layer 13a on a surface of the EL device 12; forming a hydrocarbon layer 13c on the first inorganic layer 13a; flattening the hydrocarbon layer 13c by softening or melting the hydrocarbon layer 13c; curing the hydrocarbon layer 13c; and forming a second inorganic layer 13e thicker than the first inorganic layer 13a on the hydrocarbon layer 13c after curing the hydrocarbon layer 13c.

Abstract: A substrate processing system of forming a resist pattern having a molecular resist of a low molecular compound on a substrate includes a film forming device configured to form a resist film on the substrate; an exposure device configured to expose the formed resist film; and a developing device configured to develop the exposed resist film. The film forming device includes a processing chamber configured to accommodate therein the substrate; a holding table that is provided in the processing chamber and configured to hold the substrate thereon; a resist film deposition head configured to supply a vapor of the molecular resist to the substrate held on the holding table; and a depressurizing device configured to depressurize an inside of the processing chamber to a vacuum atmosphere.

Abstract: An evaporating method is capable of forming a thin film on a substrate by a vapor deposition process. The evaporating method includes measuring a vapor concentration of a material gas discharged to the substrate by a detector; and controlling a film forming condition based on a measurement result from the detector.

Abstract: A method for processing an amorphous carbon film which has been formed on a substrate and wet-cleaned after being dry-etched includes preparing the substrate having the wet-cleaned amorphous carbon film and modifying a surface of the amorphous carbon film, before forming an upper layer on the wet-cleaned amorphous carbon film.

Abstract: An amorphous carbon film forming method is performed by using a parallel plate type plasma CVD apparatus in which an upper electrode and a lower electrode are installed within a processing chamber, and the method includes: disposing a substrate on the lower electrode; supplying carbon monoxide and an inert gas into the processing chamber; decomposing the carbon monoxide by applying a high frequency power to at least the upper electrode and generating plasma; and depositing amorphous carbon on the substrate. It is desirable that the upper electrode is a carbon electrode.

Abstract: The present invention is an aftertreatment method further applied to an amorphous carbon film to which a treatment including heating is performed after the film has been formed on a substrate. The treatment of preventing oxidation of the amorphous carbon film is performed immediately after the treatment including heating.

Abstract: Provided is a plasma processing apparatus including a processing vessel accommodating a target object; a microwave generator configured to generate a microwave; a waveguide configured to induce the microwave to the processing vessel; a planar antenna having a plurality of microwave radiation holes through which the microwave induced to the waveguide is radiated toward the processing vessel; a microwave transmission plate configured to serve as a ceiling wall of the processing vessel and transmit the microwave passed from the microwave radiation holes of the planar antenna; a processing gas inlet unit configured to introduce a processing gas into the processing vessel; and a magnetic field generating unit positioned above the planar antenna and configured to generate a magnetic field within the processing vessel and control a property of plasma of the processing gas by the magnetic field, the plasma being generated by the microwave within the processing vessel.

Abstract: Provided is a sputtering device which can achieve a sputtering while blocking light that enters from a sputtering space onto a substrate as an object to be sputtered on which an organic thin film is formed, thereby preventing the deterioration in properties of the organic thin film. Specifically provided is a sputtering device for achieving a sputtering of a substrate that is placed on the side of a sputtering space, wherein the sputtering space is formed between a pair of targets that are so placed as to face each other. The sputtering device comprises: an electric power source configured to apply a voltage between the pair of targets; a gas supply unit configured to supply an inert gas to the sputtering space; and a light-shielding mechanism configured to be placed between the sputtering space and the substrate.

Abstract: Disclosed is a film forming method of an amorphous carbon film, including: disposing a substrate in a processing chamber; supplying a processing gas containing carbon, hydrogen and oxygen into the processing chamber; and decomposing the processing gas by heating the substrate in the processing chamber and depositing the amorphous carbon film on the substrate.

Abstract: Disclosed is a semiconductor device including: a substrate; a wiring layer formed on the substrate and made of copper or a copper alloy; a copper diffusion barrier film formed on the wiring layer and made of an amorphous carbon film formed by CVD using a processing gas containing a hydrocarbon gas; and a low-k insulating film formed on the copper diffusion barrier film.

Abstract: An amorphous carbon film, which has excellent etching resistance and is capable of reducing reflectance when a resist film is exposed to light, is form. A method for manufacturing a semiconductor device includes forming an object film to be etched on a wafer, supplying a process gas containing a CO gas and an N2 gas into a processing container, forming an amorphous carbon nitride film from the supplied CO gas and N2 gas, forming a silicon oxide film on the amorphous carbon nitride film, forming an ArF resist film on the silicon oxide film, patterning the ArF resist film, etching the silicon oxide film by using the ArF resist film as a mask, etching the amorphous carbon nitride film by using the silicon oxide film as a mask, and etching the object film to be etched by using the amorphous carbon nitride film as a mask.

Abstract: A method for processing an amorphous carbon film which has been formed on a substrate and wet-cleaned after being dry-etched includes preparing the substrate having the wet-cleaned amorphous carbon film and modifying a surface of the amorphous carbon film, before forming an upper layer on the wet-cleaned amorphous carbon film.

Abstract: Disclosed is a semiconductor device including: a substrate; a wiring layer formed on the substrate and made of copper or a copper alloy; a copper diffusion barrier film formed on the wiring layer and made of an amorphous carbon film formed by CVD using a processing gas containing a hydrocarbon gas; and a low-k insulating film formed on the copper diffusion barrier film.