Abstract: A semiconductor device is provided to reduce thermal fatigue in a junction portion of an external wiring to enhance long-term reliability, where the semiconductor device includes a semiconductor substrate, a transistor portion and a diode portion that are alternately arranged along a first direction parallel to a front surface of the semiconductor substrate inside the semiconductor substrate, a surface electrode that is provided above the transistor portion and the diode portion and that is electrically connected to the transistor portion and the diode portion, an external wiring that is joined to the surface electrode and that has a contact width with the surface electrode in the first direction, the contact width being larger than at least one of a width of the transistor portion in the first direction and a width of the diode portion in the first direction.

Abstract: Provided is a method for producing a radiohalogen-labeled compound, the method comprises: a step in which a radiohalogen-labeling precursor compound (S-L) having a leaving group (L) capable of being nucleophilically substituted by a radioactive halide ion (X?) is subjected to a radiohalogenation reaction to obtain a reaction mixture RM1 which contains the radiohalogen-labeling precursor compound (S-L) and a reaction product (S—X) resulting from the radiohalogenation reaction; a step in which the reaction mixture RM1 is mixed with a polyvalent acid or a salt thereof to obtain a reaction mixture RM2; and a step in which the reaction product (S—X) is purified from the reaction mixture RM2 by a solid phase extraction method.

Abstract: There is provided a labeling precursor compound represented by the general formula (2): wherein S represents a substrate, L represents a straight alkyl group having 1 to 6 carbon atoms which may contain an ether group, R1 and R2 each independently represent a straight or branched alkyl group having 1 to 30 carbon atoms, or a substituted or unsubstituted monocyclic or condensed polycyclic aryl group, R3 each independently represent an alkyl group having 1 to 4 carbon atoms or an alkoxy group having 1 to 4 carbon atoms, and p represents an integer of 0 to 4.

Abstract: A semiconductor device is provided to reduce thermal fatigue in a junction portion of an external wiring to enhance long-term reliability, where the semiconductor device includes a semiconductor substrate, a transistor portion and a diode portion that are alternately arranged along a first direction parallel to a front surface of the semiconductor substrate inside the semiconductor substrate, a surface electrode that is provided above the transistor portion and the diode portion and that is electrically connected to the transistor portion and the diode portion, an external wiring that is joined to the surface electrode and that has a contact width with the surface electrode in the first direction, the contact width being larger than at least one of a width of the transistor portion in the first direction and a width of the diode portion in the first direction.

Abstract: A treatment instrument includes a treatment body that includes a treatment surface provided in the first clamp surface, the treatment surface protruding toward the second clamp surface in response to the supply of heat energy and increasing pressure on the living tissue to treat the living tissue in cooperation with the action of the heat energy.

Abstract: A semiconductor device, including a plurality of semiconductor modules, each including a semiconductor element, a main terminal and a wiring portion that connects the semiconductor element and the main terminal, and at least one busbar that each includes a terminal portion, and a plurality of attachment portions, the attachment portions being respectively connected to the main terminals of the semiconductor modules, such that the at least one busbar connects the semiconductor modules in parallel. The largest resistance among all resistances between the terminal portion and each of the attachment portions in each busbar is 10% or less of a resistance of the wiring portion in each semiconductor module. The largest inductance among all inductances between the terminal portion and each of the attachment portions in each busbar is 10% or less of an inductance of the wiring portion in each semiconductor module.

Abstract: A semiconductor device can include an insulating substrate on which at least four semiconductor elements forming a three-level power conversion circuit are mounted, a base plate on which the insulating substrate is provided, a positive conductor plate with a positive DC potential which is connected to one semiconductor element among the semiconductor elements; a negative conductor plate with a negative DC potential which is connected to another semiconductor element among the semiconductor elements and an intermediate potential conductor plate with an intermediate potential which is connected to the remaining two semiconductor elements among the semiconductor elements. The positive conductor plate, the negative conductor plate, and the intermediate potential conductor plate are provided on the base plate. The positive conductor plate and the negative conductor plate are arranged close to the intermediate potential conductor plate so as to face the intermediate potential conductor plate.

Abstract: It is intended to provide a gene capable of conferring more practical environmental stress tolerances to a plant and the use thereof. The present invention provides a plant having enhancement in one or two or more genes selected from the group consisting of a second gene selected from a gene group consisting of a first gene subgroup consisting of Os12g0150200 gene, Os01g0858350 gene, Os05g0445100 gene, Os11g0151400 gene, AT3G48520 gene, and AT2G27690 gene, and a gene functionally equivalent to any of these genes and a second gene subgroup consisting of Os04g0584800 gene and a gene functionally equivalent to this gene.

Abstract: A suture-needle holder includes: a sheath part; a grasping portion; an operation wire; and an operation part body formed to extend along a longitudinal axis, and connected such that the sheath part is movable in a direction aligned with the longitudinal axis and rotatable around the longitudinal axis. A first groove part having a distal end and a proximal end and extending along the longitudinal axis, and a second groove part having one end connected to the proximal end of the first groove part and the other end at a position separated from the one end in the direction aligned with the longitudinal axis and in a circumferential direction of the longitudinal axis, and extending from the one end to the other end are formed in the operation part body.

Abstract: A semiconductor device, according to one possible configuration, includes switching circuits, each switching circuit comprising IGBT chips connected in series and clamping diodes. The semiconductor device also includes a first and a second wiring line and auxiliary emitter lines. The first wiring line and a first auxiliary emitter line connect the emitter terminals of IGBT chips of the first and second switching circuits. The second wiring line and another auxiliary emitter line connect the emitter terminals of the third IGBT chips of the first and second switching circuits. The wiring lines have a large current carrying capacity and a lower resistance value than their respectively connected auxiliary emitter line.

Abstract: A treatment instrument includes a treatment body that includes a treatment surface provided in the first clamp surface, the treatment surface protruding toward the second clamp surface in response to the supply of heat energy and increasing pressure on the living tissue to treat the living tissue in cooperation with the action of the heat energy.

Abstract: A suture-needle holder includes: a sheath part; a grasping portion; an operation wire; and an operation part body formed to extend along a longitudinal axis, and connected such that the sheath part is movable in a direction aligned with the longitudinal axis and rotatable around the longitudinal axis. A first groove part having a distal end and a proximal end and extending along the longitudinal axis, and a second groove part having one end connected to the proximal end of the first groove part and the other end at a position separated from the one end in the direction aligned with the longitudinal axis and in a circumferential direction of the longitudinal axis, and extending from the one end to the other end are formed in the operation part body.

Abstract: A semiconductor device, including a plurality of semiconductor modules, each including a semiconductor element, a main terminal and a wiring portion that connects the semiconductor element and the main terminal, and at least one busbar that each includes a terminal portion, and a plurality of attachment portions, the attachment portions being respectively connected to the main terminals of the semiconductor modules, such that the at least one busbar connects the semiconductor modules in parallel. The largest resistance among all resistances between the terminal portion and each of the attachment portions in each busbar is 10% or less of a resistance of the wiring portion in each semiconductor module. The largest inductance among all inductances between the terminal portion and each of the attachment portions in each busbar is 10% or less of an inductance of the wiring portion in each semiconductor module.

Abstract: A treatment device includes a first energy output portion that is disposed in one of a pair of holding portions and includes first and second operation regions; and a second energy output portion that is disposed in the other holding portion of the pair of holding portions and includes third and fourth operation regions. The first operation region projects toward the second energy output portion more than the second operation region. The third operation region projects toward the first energy output portion more than the fourth operation region. Each of the first and third operation regions includes steps.

Abstract: A semiconductor device, according to one possible configuration, includes switching circuits, each switching circuit comprising IGBT chips connected in series and clamping diodes. The semiconductor device also includes a first and a second wiring line and auxiliary emitter lines. The first wiring line and a first auxiliary emitter line connect the emitter terminals of IGBT chips of the first and second switching circuits. The second wiring line and another auxiliary emitter line connect the emitter terminals of the third IGBT chips of the first and second switching circuits. The wiring lines have a large current carrying capacity and a lower resistance value than their respectively connected auxiliary emitter line.

Abstract: A treatment device which applies energy to a biological tissue to treat the biological tissue, includes: an interlocking mechanism that regulates at least one of a closing time until first and second jaws reach a closed state from an opened state when one operation is input into an operating body for a handle, and a unit closing amount from the opened state toward the closed state, interlocks at least one of the first and second jaws with the operating body, and is interposed between the operating body and the handle; and an elastic member that is disposed in the interlocking mechanism, couples the operating body with the handle, pulls the operating body toward the handle at a constant load or a constant pressure, and regulates the closing time until the closed state is reached from the opened state.

Abstract: A semiconductor device can include an insulating substrate on which at least four semiconductor elements forming a three-level power conversion circuit are mounted, a base plate on which the insulating substrate is provided, a positive conductor plate with a positive DC potential which is connected to one semiconductor element among the semiconductor elements; a negative conductor plate with a negative DC potential which is connected to another semiconductor element among the semiconductor elements and an intermediate potential conductor plate with an intermediate potential which is connected to the remaining two semiconductor elements among the semiconductor elements. The positive conductor plate, the negative conductor plate, and the intermediate potential conductor plate are provided on the base plate. The positive conductor plate and the negative conductor plate are arranged close to the intermediate potential conductor plate so as to face the intermediate potential conductor plate.

Abstract: A treatment system includes: an absorbent member which is arranged to be discharged into the biological tissues as the fusion targets from the first jaw, thermally deformed when the thermal energy is applied thereto; a first energy discharge portion which is configured to discharge the absorbent member toward the second holding surface, and which is configured to supply the high-frequency energy and the thermal energy to the biological tissues; a second energy discharge portion which is configured to come into contact with at least a part of the absorbent member when the absorbent member is discharged, and which is configured to supply the high-frequency energy and the thermal energy to the biological tissues; and a control unit which is configured to control the energy source to supply the thermal energy after discharging the absorbent member to the biological tissues.

Abstract: The present invention is to provide an apparatus for coloring an electrical wire to improve a visibility and design of the electrical wire. The apparatus includes a coloring device for ejecting a liquid coloring material to an outer surface of the electrical wire and a sliding device for moving relatively the coloring device in a direction perpendicular to a longitudinal direction of the electrical wire so as to color each whole outer surface of a plurality of coloring regions thereof responsive to a belt-shaped design pattern.