Abstract: A light emitting element includes: a semiconductor layered structure; a first electrically insulating film covering surfaces of the semiconductor layered structure and defining a first opening in each of a first region and a second region of a first semiconductor layer, and defining a second opening in a portion above a second semiconductor layer; a first electrode electrically connected to the first semiconductor layer through each first opening; a second electrode electrically connected to the second semiconductor layer through the second opening; a first terminal located on the first electrode and electrically connected to the first electrode; a second terminal located on the second electrode and electrically connected to the second electrode; and a metal member located on a portion of the first electrically insulating film located over the second semiconductor layer and electrically insulated from the first terminal and the second terminal.

Abstract: A light-emitting element includes: a base member including a first side and a second side, the first side and the second side being along a first direction, wherein a second direction from the first side toward the second side is orthogonal to the first direction; a semiconductor stacked body that is not electrically connected to the base member in a third direction, the third direction being orthogonal to a plane including the first direction and the second direction, the semiconductor stacked body comprising a p-type semiconductor layer, a light-emitting layer, and an n-type semiconductor layer; a first pad electrode that is not electrically connected to the base member in the third direction; a second pad electrode that is not electrically connected to the base member in the third direction; a first conductive layer; and a second conductive layer.

Abstract: A light-emitting device includes: a substrate; n light-emitting elements (n being a natural number of 2 or more) mounted on the substrate, each comprising a first bonding member electrically connected to a first semiconductor layer, and a second bonding member electrically connected to a second semiconductor layer; and n+1 interconnects provided on the substrate, the n+1 interconnects comprising a first interconnect comprising a first external connection portion, a second interconnect comprising a second external connection portion, and a third interconnect comprising a third external connection portion. In a top-view, the first light-emitting element is located between a first side of the substrate and a second light-emitting element, and the second light-emitting element is located between a first light-emitting element and a second side.

Abstract: A light emitting device includes: a plurality of element structural bodies, each including: a substrate, a light emitting element mounted on or above the substrate, and a light-transmissive member disposed on or above the light emitting element, wherein at least three of the plurality of element structural bodies are disposed along a first direction; a first covering member that covers lateral surfaces of the substrate, the light emitting element, and the light-transmissive member of each of the plurality of element structural bodies; and a support member that covers a lateral surface of the first covering member, wherein at least a portion of the support member is disposed lateral to the plurality of element structural bodies and extends along the first direction. A rigidity of the support member is greater than a rigidity of the first covering member.

Abstract: A method of manufacturing a light-emitting device that includes providing a plurality of element structures, each of which includes a submount substrate, a light-emitting element, and a light-transmissive member in this order. The method further includes disposing the plurality of element structures such that the light-transmissive members face a sheet member, and forming a covering member on the sheet member to cover at least a portion of each of lateral surfaces of the submount substrate of each of the element structures.

Abstract: A method of manufacturing a light-emitting module that includes providing a light-transmissive member joined body that includes a plurality of submounts, a plurality of light-emitting elements each of which is disposed on a respective one of submounts, and a single light-transmissive member disposed on the light-emitting elements. The method further includes disposing the light-transmissive member joined body on a module board such that the submounts face the module board, forming a plurality of element structures by dividing the single light-transmissive member for each light-emitting element into the element structures each of which includes the submount, the light-emitting element, and the light-transmissive member positioned in this order, and forming a first covering member on the module board to cover lateral surfaces of the element structures.

Abstract: A light-emitting device includes: a circuit board; and a light-emitting element mounted on the circuit board, the light-emitting element including: a substrate provided on the circuit board, the substrate having a first side along a first direction and a second side along the first direction, wherein a second direction from the first side toward the second side being is orthogonal to the first direction; n semiconductor stacked bodies (n being a natural number of 2 or more) provided on the substrate, the n semiconductor stacked bodies comprising a first semiconductor stacked body and a second semiconductor stacked body that are electrically insulated from each other; and n+1 interconnect layers.

Abstract: A method of manufacturing a light emitting device includes: providing a plurality of first element structures each including a submount, a light emitting element, and a light transmissive member, in this order; disposing the first element structures on a sheet member such that the submount in each of the first element structures faces the sheet member; and forming a first cover member on the sheet member so as to cover lateral faces of the first element structures.

Abstract: A light-emitting element includes: a base member including a first side and a second side, the first side and the second side being along a first direction, wherein a second direction from the first side toward the second side is orthogonal to the first direction; a semiconductor stacked body that is not electrically connected to the base member in a third direction, the third direction being orthogonal to a plane including the first direction and the second direction, the semiconductor stacked body comprising a p-type semiconductor layer, a light-emitting layer, and an n-type semiconductor layer; a first pad electrode that is not electrically connected to the base member in the third direction; a second pad electrode that is not electrically connected to the base member in the third direction; a first conductive layer; and a second conductive layer.

Abstract: A light emitting device includes a base structure and a light emitting element. The light emitting element includes a first electrode and a second electrode. The first electrode includes a first electrode surface. The second electrode is separately provided from the first electrode. The second electrode includes a second electrode surface. The second electrode surface is spaced apart from the first electrode surface in a second direction different from a first direction. The second electrode surface includes a first part and a second part. The first part extends in a third direction different from each of the first direction and the second direction. The second part extends from the first part in the second direction. At least part of the second part has a curved profile extending from the first part when viewed in the first direction.

Abstract: Provided are a light emitting element and a light emitting device with improved light emission intensity distribution. A light emitting element includes a light-transmissive substrate, an n-type semiconductor layer, a first p-type semiconductor layer, a first p-side electrode, a first n-side electrode, a second p-type semiconductor layer, a second p-side electrode, and a second n-side electrode. A light emitting device includes the light emitting element, and an external connection electrode provided at the light emitting element on a side opposite to the light-transmissive substrate. The external connection electrode includes an n-side external connection electrode connected to the first n-side electrode and the second n-side electrode, a first p-side external connection electrode connected to the first p-side electrode, and a second p-side external connection electrode connected to the second p-side electrode.

Abstract: Provided are a light emitting element and a light emitting device with improved light emission intensity distribution. A light emitting element includes a light-transmissive substrate, an n-type semiconductor layer, a first p-type semiconductor layer, a first p-side electrode, a first n-side electrode, a second p-type semiconductor layer, a second p-side electrode, and a second n-side electrode. A light emitting device includes the light emitting element, and an external connection electrode provided at the light emitting element on a side opposite to the light-transmissive substrate. The external connection electrode includes an n-side external connection electrode connected to the first n-side electrode and the second n-side electrode, a first p-side external connection electrode connected to the first p-side electrode, and a second p-side external connection electrode connected to the second p-side electrode.

Abstract: Provided are a light emitting element and a light emitting device with improved light emission intensity distribution. A light emitting element includes a light-transmissive substrate, an n-type semiconductor layer, a first p-type semiconductor layer, a first p-side electrode, a first n-side electrode, a second p-type semiconductor layer, a second p-side electrode, and a second n-side electrode. A light emitting device includes the light emitting element, and an external connection electrode provided at the light emitting element on a side opposite to the light-transmissive substrate. The external connection electrode includes an n-side external connection electrode connected to the first n-side electrode and the second n-side electrode, a first p-side external connection electrode connected to the first p-side electrode, and a second p-side external connection electrode connected to the second p-side electrode.

Abstract: A light-emitting element includes a semiconductor layered body comprising: an n-type semiconductor layer, and p-type semiconductor layer; an insulating film disposed on the semiconductor layered body and defining at least one p-side opening above the p-type semiconductor layer and a plurality of n-side openings exposing the n-type semiconductor layer; an n-side electrode disposed on the insulating film and comprising a plurality of first n-contact portions each electrically connected to the n-type semiconductor layer through one of the plurality of n-side openings; a p-side electrode electrically connected to the p-type semiconductor layer through the at least one p-side opening; a p-side post electrode disposed on the p-side electrode; and an n-side post electrode disposed on the n-side electrode. A total area of one or more first n-contact portions located on the second side is smaller than a total area of one or more first n-contact portion located on the first side.

Abstract: A light-emitting element includes a light transmissive substrate; a first semiconductor stacked body including: a first n-side semiconductor layer, and a first p-side semiconductor layer, the first p-side semiconductor layer having a hole formed therein; a first p-electrode; a first n-electrode having a portion above the first p-electrode, and a portion extending into the hole, the first n-electrode being electrically connected to the first n-side semiconductor layer through the hole; a second semiconductor stacked body including: a second n-side semiconductor layer located around a periphery of the first semiconductor stacked body, and a second p-side semiconductor layer located above the second n-side semiconductor layer and located outside of an inner edge portion of the second n-side semiconductor layer; a second p-electrode; and a second n-electrode having a portion above the second p-electrode, and being electrically connected to the inner edge portion of the second n-side semiconductor layer.

Abstract: A light emitting device includes a light emitting element, a p-side and an n-side post electrode. The light emitting element includes a semiconductor body having n-type and p-type semiconductor layers and a peripheral portion, a first edge, and a second edge. The light emitting element further includes an n-side electrode and a p-side electrode disposed on an insulating film having n-side openings and a p-side opening. The n-side electrode includes second n-contact portions electrically connected to the n-type semiconductor layer through the n-side openings. In a plan view, a p-side post electrode and at least one of the second n-contact portions are at the first edge side. An n-side post electrode electrically connected to the second n-contact portions and at least one of the second n-contact portions are at the second edge side. Fewer second n-contact portions are on the first edge side than that on the second edge side.

Abstract: A light-emitting element includes a light transmissive substrate; a first semiconductor stacked body including: a first n-side semiconductor layer, and a first p-side semiconductor layer, the first p-side semiconductor layer having a hole formed therein; a first p-electrode; a first n-electrode having a portion above the first p-electrode, and a portion extending into the hole, the first n-electrode being electrically connected to the first n-side semiconductor layer through the hole; a second semiconductor stacked body including: a second n-side semiconductor layer located around a periphery of the first semiconductor stacked body, and a second p-side semiconductor layer located above the second n-side semiconductor layer and located outside of an inner edge portion of the second n-side semiconductor layer; a second p-electrode; and a second n-electrode having a portion above the second p-electrode, and being electrically connected to the inner edge portion of the second n-side semiconductor layer.

Abstract: When a driver manipulates a fuel filler lid switch, a tank shutoff valve is opened. Then, time t is calculated, and then, remaining time, obtained by subtracting elapsed time from the time t, is presented on a display device. If the fuel filler lid switch is manipulated again, the tank shutoff valve is closed to seal a fuel tank, and a message to the effect that opening action of the fuel filler lid is cancelled is presented on the display device. If the time t has elapsed without the fuel filler lid switch being manipulated again, the fuel filler lid is opened, determining that internal pressure in the fuel tank has decreased to a level predetermined to ensure that the fuel tank can be filled safely without fuel or fuel evaporative gas spouting from the fuel tank.

Abstract: Provided are a light emitting element and a light emitting device with improved light emission intensity distribution. A light emitting element includes a light-transmissive substrate, an n-type semiconductor layer, a first p-type semiconductor layer, a first p-side electrode, a first n-side electrode, a second p-type semiconductor layer, a second p-side electrode, and a second n-side electrode. A light emitting device includes the light emitting element, and an external connection electrode provided at the light emitting element on a side opposite to the light-transmissive substrate. The external connection electrode includes an n-side external connection electrode connected to the first n-side electrode and the second n-side electrode, a first p-side external connection electrode connected to the first p-side electrode, and a second p-side external connection electrode connected to the second p-side electrode.

Abstract: A light emitting device includes a base structure and a light emitting element. The light emitting element includes a first electrode and a second electrode. The first electrode includes a first electrode surface. The second electrode is separately provided from the first electrode. The second electrode includes a second electrode surface. The second electrode surface is spaced apart from the first electrode surface in a second direction different from a first direction. The second electrode surface includes a first part and a second part. The first part extends in a third direction different from each of the first direction and the second direction. The second part extends from the first part in the second direction. At least part of the second part has a curved profile extending from the first part when viewed in the first direction.