Abstract: A light-emitting element includes a light transmissive substrate; a first semiconductor stacked body including: a first n-side semiconductor layer, and a first p-side semiconductor layer, the first p-side semiconductor layer having a hole formed therein; a first p-electrode; a first n-electrode having a portion above the first p-electrode, and a portion extending into the hole, the first n-electrode being electrically connected to the first n-side semiconductor layer through the hole; a second semiconductor stacked body including: a second n-side semiconductor layer located around a periphery of the first semiconductor stacked body, and a second p-side semiconductor layer located above the second n-side semiconductor layer and located outside of an inner edge portion of the second n-side semiconductor layer; a second p-electrode; and a second n-electrode having a portion above the second p-electrode, and being electrically connected to the inner edge portion of the second n-side semiconductor layer.

Abstract: When a driver manipulates a fuel filler lid switch, a tank shutoff valve is opened. Then, time t is calculated, and then, remaining time, obtained by subtracting elapsed time from the time t, is presented on a display device. If the fuel filler lid switch is manipulated again, the tank shutoff valve is closed to seal a fuel tank, and a message to the effect that opening action of the fuel filler lid is cancelled is presented on the display device. If the time t has elapsed without the fuel filler lid switch being manipulated again, the fuel filler lid is opened, determining that internal pressure in the fuel tank has decreased to a level predetermined to ensure that the fuel tank can be filled safely without fuel or fuel evaporative gas spouting from the fuel tank.

Abstract: Provided are a light emitting element and a light emitting device with improved light emission intensity distribution. A light emitting element includes a light-transmissive substrate, an n-type semiconductor layer, a first p-type semiconductor layer, a first p-side electrode, a first n-side electrode, a second p-type semiconductor layer, a second p-side electrode, and a second n-side electrode. A light emitting device includes the light emitting element, and an external connection electrode provided at the light emitting element on a side opposite to the light-transmissive substrate. The external connection electrode includes an n-side external connection electrode connected to the first n-side electrode and the second n-side electrode, a first p-side external connection electrode connected to the first p-side electrode, and a second p-side external connection electrode connected to the second p-side electrode.

Abstract: A light emitting device includes a base structure and a light emitting element. The light emitting element includes a first electrode and a second electrode. The first electrode includes a first electrode surface. The second electrode is separately provided from the first electrode. The second electrode includes a second electrode surface. The second electrode surface is spaced apart from the first electrode surface in a second direction different from a first direction. The second electrode surface includes a first part and a second part. The first part extends in a third direction different from each of the first direction and the second direction. The second part extends from the first part in the second direction. At least part of the second part has a curved profile extending from the first part when viewed in the first direction.

Abstract: A light-emitting element includes a semiconductor layered body comprising: an n-type semiconductor layer, and p-type semiconductor layer; an insulating film disposed on the semiconductor layered body and defining at least one p-side opening above the p-type semiconductor layer and a plurality of n-side openings exposing the n-type semiconductor layer; an n-side electrode disposed on the insulating film and comprising a plurality of first n-contact portions each electrically connected to the n-type semiconductor layer through one of the plurality of n-side openings; a p-side electrode electrically connected to the p-type semiconductor layer through the at least one p-side opening; a p-side post electrode disposed on the p-side electrode; and an n-side post electrode disposed on the n-side electrode. A total area of one or more first n-contact portions located on the second side is smaller than a total area of one or more first n-contact portion located on the first side.

Abstract: A light emitting device includes a light emitting element, a p-side and an n-side post electrode. The light emitting element includes a semiconductor body having n-type and p-type semiconductor layers and a peripheral portion, a first edge, and a second edge. The light emitting element further includes an n-side electrode and a p-side electrode disposed on an insulating film having n-side openings and a p-side opening. The n-side electrode includes second n-contact portions electrically connected to the n-type semiconductor layer through the n-side openings. In a plan view, a p-side post electrode and at least one of the second n-contact portions are at the first edge side. An n-side post electrode electrically connected to the second n-contact portions and at least one of the second n-contact portions are at the second edge side. Fewer second n-contact portions are on the first edge side than that on the second edge side.

Abstract: [Object] [Means for Solving Problem] A method for manufacturing of a semiconductor light emitting element has; forming a semiconductor layer laminated of a first conductivity type semiconductor layer, a light emitting layer and a second conductivity type semiconductor layer, in this order, forming an electrode including a silver-containing layer in contact with an upper surface of the second conductivity type semiconductor layer, forming an insulating layer coating over at least a side surface of the silver-containing layer from the upper surface of the second conductivity type semiconductor layer by an atomic layer deposition method.

Abstract: A vehicle fuel tank according to the present invention has a structure in which a chamber space (10) of a baffle body (6) is formed at a point away from an inner surface of a tank body (1).

Abstract: A fuel evaporation gas discharge suppressing device of an internal combustion engine includes a gas storage tank for storing a fuel evaporation gas in a communication passage for causing an air intake passage and a fuel tank in an internal combustion engine of a vehicle to communicate with each other in the communication passage. Control unit controls canister opening/closing unit, fuel tank opening/closing unit and gas tank opening/closing unit based on an internal pressure of the fuel tank. The control unit opens the canister opening/closing unit and opens the fuel tank toward the communication passage, and then opens the gas storage tank toward the communication passage when reducing the internal pressure of the fuel tank.

Abstract: A fuel evaporation gas discharge suppressing device of an internal combustion engine includes a gas storage tank for storing a fuel evaporation gas in a communication passage for causing an air intake passage and a fuel tank in an internal combustion engine of a vehicle to communicate with each other in the communication passage. Control unit controls canister opening/closing unit, fuel tank opening/closing unit and gas tank opening/closing unit based on an internal pressure of the fuel tank. The control unit opens the canister opening/closing unit and opens the fuel tank toward the communication passage, and then opens the gas storage tank toward the communication passage when reducing the internal pressure of the fuel tank.

Abstract: [Object] [Means for Solving Problem] A method for manufacturing of a semiconductor light emitting element has; forming a semiconductor layer laminated of a first conductivity type semiconductor layer, a light emitting layer and a second conductivity type semiconductor layer, in this order, forming an electrode including a silver-containing layer in contact with an upper surface of the second conductivity type semiconductor layer, forming an insulating layer coating over at least a side surface of the silver-containing layer from the upper surface of the second conductivity type semiconductor layer by an atomic layer deposition method.

Abstract: An apparatus has both a function to enter a plurality of items required for processing by means of key input by repeating an operation in which an item is selected from a displayed list using a key selection, which causes the display of another list of items related to the selected item, and a function to enter a plurality of items required for processing by means of voice input by entering each item via voice. An item may be entered by a combination of key input and voice input. When an item is entered by either key input or voice input, a list of items related to the entered item is displayed. Alternatively, upon a request for list view in a voice-input mode, a list of items for key input is presented, and the input mode is temporarily switched to a key-input mode. Once an item has been selected from the presented list using a key selection, the input mode is returned to the voice-input mode.