Abstract: An object is to provide an incised prepreg having desired formability stably, wherein the incised prepreg contains unidirectionally oriented reinforcing fibers and matrix resin and has an incised region containing a plurality of incisions made to divide reinforcing fibers, wherein the incised region includes a plurality of incision rows, each containing a plurality of incisions having nearly equal fiber-directionally projected lengths and aligned at substantially constant intervals in the fiber direction and wherein the distance L1, measured at right angles to the fiber direction, between two incision rows located on either side of an arbitrarily selected incision row and the fiber-directionally projected length L2 of the latter incision row satisfy the following relation: ?1.0<L1/L2<0.5.

Abstract: A memory pillar penetrates first conductors that are aligned in a first direction separately from each other. A first member penetrates the first conductors in the first direction and has a first portion and second portions. The first portion extends in a second direction intersecting with the first direction. The second portions are aligned spaced apart in the second direction on an upper surface of the first portion. A length of each second portion in a third direction intersecting with the first and second directions is shorter than a length of the first portion in the third direction. The first member further includes a bridge that is positioned on the upper surface of the first portion and between two neighboring ones of the second portions and extends on the upper surface of the first portion across both ends of the first portion.

Abstract: A semiconductor memory device includes multiple first electrode layers stacked in a first direction, multiple second electrode layers stacked in the first direction, a first columnar body extending through the multiple first electrode layers in the first direction, a second columnar body extending through the multiple second electrode layers in the first direction, a connection part connecting the first columnar body and the second columnar body, and a spacer film having an island configuration surrounding the connection part. The multiple first electrode layers and the multiple second electrode layers are arranged in the first direction, and the connection part and the spacer film are provided between the multiple first electrode layers and the multiple second electrode layers.

Abstract: A semiconductor memory device includes a plurality of first conductive layers, a first semiconductor layer opposed to them, a first insulating film disposed between the plurality of first conductive layers and the first semiconductor layer, a second semiconductor layer connected to the first semiconductor layer, a second conductive layer opposed to this, a second insulating film disposed between the second semiconductor layer and the second conductive layer, and a third semiconductor layer connected to the first semiconductor layer via the second semiconductor layer. The second conductive layer includes a first part and a second part disposed between the first part and the second semiconductor layer. A thickness in the first direction of the second part is smaller than a thickness in the first direction of the first part.

Abstract: An object of the present invention is to provide an exhaust gas purification catalyst which can exhibit sufficient purification performance even under a high Ga condition. The present invention relates to an exhaust gas purification catalyst comprising a substrate and a catalyst coating layer formed on the substrate, wherein the catalyst coating layer comprises catalyst particles, the catalyst coating layer having an upstream region extending by 40 to 60% of the entire length of the substrate from an upstream end of the catalyst in the direction of an exhaust gas flow and a downstream region corresponding to the remainder portion of the catalyst coating layer, the composition of the catalyst particle of the upstream region being different from that of the downstream region.

Abstract: A semiconductor memory device includes multiple first electrode layers stacked in a first direction, multiple second electrode layers stacked in the first direction, a first columnar body extending through the multiple first electrode layers in the first direction, a second columnar body extending through the multiple second electrode layers in the first direction, a connection part connecting the first columnar body and the second columnar body, and a spacer film having an island configuration surrounding the connection part. The multiple first electrode layers and the multiple second electrode layers are arranged in the first direction, and the connection part and the spacer film are provided between the multiple first electrode layers and the multiple second electrode layers.

Abstract: The problem of the present invention is to provide an exhaust gas purification catalyst which can exhibit sufficient purification performance under a high Ga condition while having a resistance to stress such as high-temperature and poisonous substances. The present invention relates to an exhaust gas purification catalyst comprising two or more catalyst coating layers on a substrate, wherein a lower catalyst coating layer that is present lower with respect to an uppermost catalyst coating layer has a structure where a large number of voids are included and high-aspect-ratio pores having an aspect ratio of 5 or more account for a certain proportion or more of the whole volume of voids, thereby to improve gas diffusivity in the lower catalyst coating layer.

Abstract: An object of the present invention is to provide an exhaust gas purification catalyst which can exhibit high durability and warm-up performance. The present invention relates to an exhaust gas purification catalyst comprising a substrate and a catalyst coating layer formed on the substrate, wherein the catalyst coating layer comprises catalyst particles, the catalyst coating layer having an upstream region extending by 40 to 60% of the entire length of the substrate from an upstream end of the catalyst in the direction of an exhaust gas flow and a downstream region corresponding to the remainder portion of the catalyst coating layer, the composition of the catalyst particle of the upstream region being different from that of the downstream region. The upstream region in the direction of an exhaust gas flow has a structure where a void is included in a large number, and furthermore high-aspect-ratio pores having an aspect ratio of 5 or more account for a certain percentage or more of the whole volume of voids.

Abstract: An object of the present invention is to provide an exhaust gas purification catalyst which can exhibit high durability and warm-up performance. The present invention relates to an exhaust gas purification catalyst comprising a substrate and a catalyst coating layer formed on the substrate, wherein the catalyst coating layer comprises catalyst particles, the catalyst coating layer having an upstream region extending by 40 to 60% of the entire length of the substrate from an upstream end of the catalyst in the direction of an exhaust gas flow and a downstream region corresponding to the remainder portion of the catalyst coating layer, the composition of the catalyst particle of the upstream region being different from that of the downstream region. The upstream region in the direction of an exhaust gas flow has a structure where a void is included in a large number, and furthermore high-aspect-ratio pores having an aspect ratio of 5 or more account for a certain percentage or more of the whole volume of voids.

Abstract: When the amount of coating is increased in a two-layer catalyst or the like containing two noble metals in respective different layers, gas diffusivity in the catalyst and use efficiency of a catalytic active site are reduced to thereby reduce purification performance. In view of this, an organic fiber having a predetermined shape is used as a pore-forming material in formation of an uppermost catalyst coating layer of a multi-layer catalyst, to thereby form an uppermost catalyst coating layer having a high-aspect-ratio pore excellent in connectivity and therefore excellent gas diffusivity.

Abstract: The present invention is directed to address the following problem: in an exhaust gas purification catalyst comprising a dual catalyst of a combination of a startup catalyst and an underfloor catalyst, reduction in the gas diffusivity of the underfloor catalyst results in reduction in the use efficiency of a catalytic active site, resulting in reduction in purification performance. The present invention relates to an exhaust gas purification catalyst comprising a dual catalyst of a combination of a startup catalyst and an underfloor catalyst having a catalyst coating where a large number of voids are included, wherein high-aspect-ratio pores having an aspect ratio of 5 or more account for a certain rate or more of the whole volume of the voids, to thereby enhance the purification performance of the catalyst.

Abstract: In one embodiment, a semiconductor device includes a substrate, and first to fourth interconnects provided on the substrate to be adjacent to one another. The device includes a first pad portion connected with the first or second interconnect, and a second pad portion adjacent to the first pad portion in a first direction. The device includes a third pad portion connected with the third or fourth interconnect, and adjacent to one of the first and second pad portions in a second direction, and a fourth pad portion adjacent to the third pad portion in the first direction, and adjacent to the other of the first and second pad portions in the second direction. The device includes one or more interconnects insulated from the first to fourth interconnects and the first to fourth pad portions, and provided between the first and second interconnects and the third and fourth interconnects.

Abstract: A catalyst for purification of exhaust gas, wherein a substrate and a catalyst coat layer which is formed on a surface of the substrate and which comprises catalyst particles, wherein the catalyst coat layer has an average thickness in a range of 25 to 160 ?m, and a void fraction in a range of 50 to 80% by volume as measured by a weight-in-water method, 0.5 to 50% by volume of all voids in the catalyst coat layer consist of high-aspect ratio pores which have equivalent circle diameters in a range of 2 to 50 ?m in a cross-sectional image of a cross-section of the catalyst coat layer which the cross-section is perpendicular to a flow direction of exhaust gas in the substrate, and which have aspect ratios of 5 or higher, and the high-aspect ratio pores have an average aspect ratio in a range of 10 to 50.

Abstract: A novel guanidine compound having excellent fungicidal activity is represented by formula [I]. (In the formula, Y represents a divalent group represented by formula [II] (wherein each of R7-R9 independently represents a hydrogen atom or the like) or the like; each of X and Z independently represents an unsubstituted or substituted alkylene group or the like; each of Q1 and Q2 independently represents a single bond or the like; each of A1 and A2 independently represents an unsubstituted or substituted divalent heterocyclic compound residue or the like; and each of R1-R6 independently represents a hydrogen atom or the like.

Abstract: An object of the present invention is to provide an exhaust gas purification catalyst which can exhibit high durability and warm-up performance. The present invention relates to an exhaust gas purification catalyst comprising a substrate and a catalyst coating layer formed on the substrate, wherein the catalyst coating layer comprises catalyst particles, the catalyst coating layer having an upstream region extending by 40 to 60% of the entire length of the substrate from an upstream end of the catalyst in the direction of an exhaust gas flow and a downstream region corresponding to the remainder portion of the catalyst coating layer, the composition of the catalyst particle of the upstream region being different from that of the downstream region. The upstream region in the direction of an exhaust gas flow has a structure where a void is included in a large number, and furthermore high-aspect-ratio pores having an aspect ratio of 5 or more account for a certain percentage or more of the whole volume of voids.

Abstract: An object of the present invention is to provide an exhaust gas purification catalyst which can exhibit sufficient purification performance even under a high Ga condition. The present invention relates to an exhaust gas purification catalyst comprising a substrate and a catalyst coating layer formed on the substrate, wherein the catalyst coating layer comprises catalyst particles, the catalyst coating layer having an upstream region extending by 40 to 60% of the entire length of the substrate from an upstream end of the catalyst in the direction of an exhaust gas flow and a downstream region corresponding to the remainder portion of the catalyst coating layer, the composition of the catalyst particle of the upstream region being different from that of the downstream region.

Abstract: A catalyst for purification of exhaust gas, wherein a substrate and a catalyst coat layer which is formed on a surface of the substrate and which comprises catalyst particles, wherein the catalyst coat layer has an average thickness in a range of 25 to 160 ?m, and a void fraction in a range of 50 to 80% by volume as measured by a weight-in-water method, 0.5 to 50% by volume of all voids in the catalyst coat layer consist of high-aspect ratio pores which have equivalent circle diameters in a range of 2 to 50 ?m in a cross-sectional image of a cross-section of the catalyst coat layer which the cross-section is perpendicular to a flow direction of exhaust gas in the substrate, and which have aspect ratios of 5 or higher, and the high-aspect ratio pores have an average aspect ratio in a range of 10 to 50.

Abstract: A novel guanidine compound having excellent fungicidal activity is represented by formula [I]. (In the formula, Y represents a divalent group represented by formula [II] (wherein each of R7-R9 independently represents a hydrogen atom or the like) or the like; each of X and Z independently represents an unsubstituted or substituted alkylene group or the like; each of Q1 and Q2 independently represents a single bond or the like; each of A1 and A2 independently represents an unsubstituted or substituted divalent heterocyclic compound residue or the like; and each of R1-R6 independently represents a hydrogen atom or the like.

Abstract: The present invention is directed to address the following problem: in an exhaust gas purification catalyst comprising a dual catalyst of a combination of a startup catalyst and an underfloor catalyst, reduction in the gas diffusivity of the underfloor catalyst results in reduction in the use efficiency of a catalytic active site, resulting in reduction in purification performance. The present invention relates to an exhaust gas purification catalyst comprising a dual catalyst of a combination of a startup catalyst and an underfloor catalyst having a catalyst coating where a large number of voids are included, wherein high-aspect-ratio pores having an aspect ratio of 5 or more account for a certain rate or more of the whole volume of the voids, to thereby enhance the purification performance of the catalyst.

Abstract: The problem of the present invention is to provide an exhaust gas purification catalyst which can exhibit sufficient purification performance under a high Ga condition while having a resistance to stress such as high-temperature and poisonous substances. The present invention relates to an exhaust gas purification catalyst comprising two or more catalyst coating layers on a substrate, wherein a lower catalyst coating layer that is present lower with respect to an uppermost catalyst coating layer has a structure where a large number of voids are included and high-aspect-ratio pores having an aspect ratio of 5 or more account for a certain proportion or more of the whole volume of voids, thereby to improve gas diffusivity in the lower catalyst coating layer.