Abstract: An organic device includes a reflective film arranged on a substrate, a plurality of lower electrodes arranged above the reflective film, an organic function film configured to cover the plurality of lower electrodes, and an upper electrode arranged on the organic function film. A potential difference between the upper electrode and the reflective film is lower than a threshold voltage at which the organic function film operates.

Abstract: A thermal transfer recording medium is a thermal transfer recording medium to be transferred to a transparent film, including: a base material layer; and a first ink layer and a second ink layer that are sequentially laminated on the base material layer, in which the second ink layer has translucency that allows for visual recognition of the first ink layer, and has a complementary color relationship with the first ink layer. Also, a transfer-completed film is a transfer-completed film with a first ink layer, a second ink layer having translucency that allows for visual recognition of the first ink layer, and a transparent film laminated in this order, in which the second ink layer has a complementary color relationship with the first ink layer.

Abstract: An organic device includes a reflective film arranged on a substrate, a plurality of lower electrodes arranged above the reflective film, an organic function film configured to cover the plurality of lower electrodes, and an upper electrode arranged on the organic function film. A potential difference between the upper electrode and the reflective film is lower than a threshold voltage at which the organic function film operates.

Abstract: There is provided a thermal transfer recording medium that is ruptured between a first ink layer and a base material layer or in the first ink layer when an external force is applied to the base material layer and the second ink layer in a direction in which the layers are separated from each other, in a first state in which the thermal transfer recording medium is heated to a first temperature or higher and a second temperature or lower and then cooled to a third temperature or lower. The thermal transfer recording medium is ruptured between the first ink layer and the second ink layer or in the second ink layer when the external force is applied in a second state in which the thermal transfer recording medium is heated to a temperature above the second temperature and then cooled to the third temperature or lower.

Abstract: A thermal transfer recording medium includes a base material layer having a first surface and a second surface, and a first thermal transfer layer, a middle layer, and a second thermal transfer layer layered in this order in direct contact with each other on the first surface of the base material layer, in which the middle layer includes a thermoplastic elastomer. Since the thermal transfer recording medium includes the middle layer including a thermoplastic elastomer, characters having at least two colors can be recorded with good sharpness.

Abstract: A thermal transfer recording medium includes: a base material layer; a welding layer; a first thermal transfer layer; and a second thermal transfer layer. The base material layer has a first surface and a second surface. The welding layer, the first thermal transfer layer, and the second thermal transfer layer are in direct contact with each other and are laminated in this order on the first surface of the base material layer. The welding layer has a solubility parameter higher than a solubility parameter of each of the base material layer and the first thermal transfer layer.

Abstract: When external forces are applied to both a base material layer and a second ink layer in directions away from each other in a first state in which a thermal transfer recording medium has been heated to a temperature higher than or equal to a first temperature and lower than or equal to a second temperature and subsequently cooled to a temperature lower than or equal to a third temperature, a breakage occurs between a first ink layer and the second ink layer or within the second ink layer. When the external forces are applied in a second state in which the thermal transfer recording medium has been heated to a temperature higher than the second temperature and subsequently cooled to a temperature lower than or equal to the third temperature, a breakage occurs between the first ink layer and the base material layer or within the first ink layer.

Abstract: A device comprising a first layer, a sealing layer and a resin layer stacked in that order and an organic layer arranged between the first layer and the sealing layer in a pixel region is provided. The first, sealing and resin layers have openings for exposing an electrode in a peripheral region. The sealing layer includes second and third layers each having a water permeability lower than the first layer, and a fourth layer arranged between the second layer and the third layer and having a defect density lower than the second layer. A step of the second layer arranged above the end of the opening of the first layer is covered with the fourth layer and a step of the third layer arranged above the end of the opening of the first layer is covered with the resin layer.

Abstract: An organic device includes a reflective film arranged on a substrate, a plurality of lower electrodes arranged above the reflective film, an organic function film configured to cover the plurality of lower electrodes, and an upper electrode arranged on the organic function film. A potential difference between the upper electrode and the reflective film is lower than a threshold voltage at which the organic function film operates.

Abstract: A device comprising a first layer, a sealing layer and a resin layer stacked in that order and an organic layer arranged between the first layer and the sealing layer in a pixel region is provided. The first, sealing and resin layers have openings for exposing an electrode in a peripheral region. The sealing layer includes second and third layers each having a water permeability lower than the first layer, and a fourth layer arranged between the second layer and the third layer and having a defect density lower than the second layer. A step of the second layer arranged above the end of the opening of the first layer is covered with the fourth layer and a step of the third layer arranged above the end of the opening of the first layer is covered with the resin layer.

Abstract: A device comprising a first layer, a sealing layer and a resin layer stacked in that order and an organic layer arranged between the first layer and the sealing layer in a pixel region is provided. The first, sealing and resin layers have openings for exposing an electrode in a peripheral region. The sealing layer includes second and third layers each having a water permeability lower than the first layer, and a fourth layer arranged between the second layer and the third layer and having a defect density lower than the second layer. A step of the second layer arranged above the end of the opening of the first layer is covered with the fourth layer and a step of the third layer arranged above the end of the opening of the first layer is covered with the resin layer.

Abstract: A semiconductor device used for a liquid discharge head is provided. The device includes a wiring layer, an insulating member formed above the wiring layer, a heat generation element arranged above and in contact with the insulating member, and electrically connected to the wiring layer, a metal member arranged above and in contact with the insulating member, and electrically connected to the wiring layer, and an electrically conductive member covering an upper surface of the metal member and electrically connected to the wiring layer through the metal member. A resistivity of the electrically conductive member is less than a resistivity of the metal member and a resistivity of the heat generation element. The heat generation element and the metal member are separated from each other.

Abstract: A device comprising a first layer, a sealing layer and a resin layer stacked in that order and an organic layer arranged between the first layer and the sealing layer in a pixel region is provided. The first, sealing and resin layers have openings for exposing an electrode in a peripheral region. The sealing layer includes second and third layers each having a water permeability lower than the first layer, and a fourth layer arranged between the second layer and the third layer and having a defect density lower than the second layer. A step of the second layer arranged above the end of the opening of the first layer is covered with the fourth layer and a step of the third layer arranged above the end of the opening of the first layer is covered with the resin layer.

Abstract: An imaging device includes a pixel circuit region that includes a plurality of pixel circuits arranged in an array therein and a plurality of light guide portions. The imaging device also includes a peripheral circuit region that is positioned at a periphery of the pixel circuit region and includes a peripheral circuit. The imaging device also includes an intermediate region that is positioned between the pixel circuit region and the peripheral circuit region, forms a boundary with the pixel circuit region and the peripheral circuit region, and includes a plurality of dummy light guide portions and a plurality of contacts through which a reference potential of the plurality of pixel circuits is supplied.

Abstract: A semiconductor device used for a liquid discharge head is provided. The device includes a wiring layer, an insulating member formed above the wiring layer, a heat generation element arranged above and in contact with the insulating member, and electrically connected to the wiring layer, a metal member arranged above and in contact with the insulating member, and electrically connected to the wiring layer, and an electrically conductive member covering an upper surface of the metal member and electrically connected to the wiring layer through the metal member. A resistivity of the electrically conductive member is less than a resistivity of the metal member and a resistivity of the heat generation element. The heat generation element and the metal member are separated from each other.

Abstract: An imaging device includes a pixel circuit region that includes a plurality of pixel circuits arranged in an array therein and a plurality of light guide portions. The imaging device also includes a peripheral circuit region that is positioned at a periphery of the pixel circuit region and includes a peripheral circuit. The imaging device also includes an intermediate region that is positioned between the pixel circuit region and the peripheral circuit region, forms a boundary with the pixel circuit region and the peripheral circuit region, and includes a plurality of dummy light guide portions and a plurality of contacts through which a reference potential of the plurality of pixel circuits is supplied.

Abstract: An imaging device includes a pixel circuit region that includes a plurality of pixel circuits arranged in an array therein and a plurality of light guide portions. The imaging device also includes a peripheral circuit region that is positioned at a periphery of the pixel circuit region and includes a peripheral circuit. The imaging device also includes an intermediate region that is positioned between the pixel circuit region and the peripheral circuit region, forms a boundary with the pixel circuit region and the peripheral circuit region, and includes a plurality of dummy light guide portions and a plurality of contacts through which a reference potential of the plurality of pixel circuits is supplied.

Abstract: A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

Abstract: A semiconductor device manufacturing method includes a step of forming a hole reaching a first insulating layer over a first conductive member; a step of forming a trench reaching a second insulating layer and in communication with the hole; a step of forming an opening exposing the first conductive member in the hole; and a step of forming a second conductive member connected to the first conductive member by embedding a conductive material in the opening, the hole, and the trench. The trench is formed under an etching condition such that the etching rate with respect to the second insulating layer is lower than the etching rate with respect to the third insulating layer.

Abstract: One portion of a first insulator film, which is positioned on a second semiconductor region, and another portion of the first insulator film, which is positioned on a third semiconductor region, are removed, while a first portion of the first insulator film, which is positioned on a first semiconductor region is remained, one portion of a second insulator film, which is positioned on the first semiconductor region, and another portion of the second insulator film, which is positioned on the second semiconductor region, are removed, while a second portion of the second insulator film, which is positioned on the third semiconductor region is remained, and a metal film that covers the first portion, the second semiconductor region, and the second portion, and the second semiconductor region are caused to react with each other and a metal compound layer is formed.