Patents by Inventor Hiroaki Naruse
Hiroaki Naruse has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 7993951Abstract: In a method of manufacturing a photoelectric conversion device having a pixel region and a peripheral circuit region, a semiconductor compound layer is formed by causing a surface of a diffusion layer or gate electrode of a MOS transistor in the peripheral circuit region to react with a high melting point metal, then an insulating layer is formed in the pixel region and the peripheral circuit region after the step of forming a semiconductor compound layer. A contact hole is formed in the insulating layer to expose a diffusion layer in the pixel region, and a contact hole is formed in the insulating layer to expose the semiconductor compound layer formed in the peripheral circuit region. These holes are formed at different timings. Prior to forming the hole which is formed later, a contact plug is formed in the contact hole which is formed earlier.Type: GrantFiled: June 3, 2010Date of Patent: August 9, 2011Assignee: Canon Kabushiki KaishaInventors: Takehito Okabe, Hiroaki Naruse, Ryuichi Mishima, Kouhei Hashimoto
-
Publication number: 20110171770Abstract: A manufacturing method of a photoelectric conversion device included a first step of forming a gate electrode, a second step of forming a semiconductor region of a first conductivity type, a third step of forming an insulation film, and a fourth step of forming a protection region of a second conductivity type, which is the opposite conductivity type to the first conductivity type, by implanting ions in the semiconductor region using the gate electrode of the transfer transistor and a portion covering a side face of the gate electrode of the transfer transistor of the insulation film as a mask in a state in which the semiconductor substrate and the gate electrode of the transfer transistor are covered by the insulation film, and causing a portion of the semiconductor region of the first conductivity type from which the protection region is removed to be the charge accumulation region.Type: ApplicationFiled: March 28, 2011Publication date: July 14, 2011Applicant: CANON KABUSHIKI KAISHAInventors: Ryuichi Mishima, Mineo Shimotsusa, Hiroaki Naruse
-
Publication number: 20110157447Abstract: A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.Type: ApplicationFiled: March 4, 2011Publication date: June 30, 2011Applicant: CANON KABUSHIKI KAISHAInventors: Takanori Watanabe, Tetsuya Itano, Hidekazu Takahashi, Shunsuke Takimoto, Kotaro Abukawa, Hiroaki Naruse, Shigeru Nishimura, Masatsugu Itahashi
-
Patent number: 7935557Abstract: A manufacturing method of a photoelectric conversion device included a first step of forming a gate electrode, a second step of forming a semiconductor region of a first conductivity type, a third step of forming an insulation film, and a fourth step of forming a protection region of a second conductivity type, which is the opposite conductivity type to the first conductivity type, by implanting ions in the semiconductor region using the gate electrode of the transfer transistor and a portion covering a side face of the gate electrode of the transfer transistor of the insulation film as a mask in a state in which the semiconductor substrate and the gate electrode of the transfer transistor are covered by the insulation film, and causing a portion of the semiconductor region of the first conductivity type from which the protection region is removed to be the charge accumulation region.Type: GrantFiled: November 20, 2009Date of Patent: May 3, 2011Assignee: Canon Kabushiki KaishaInventors: Ryuichi Mishima, Mineo Shimotsusa, Hiroaki Naruse
-
Patent number: 7920192Abstract: A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.Type: GrantFiled: July 6, 2007Date of Patent: April 5, 2011Assignee: Canon Kabushiki KaishaInventors: Takanori Watanabe, Tetsuya Itano, Hidekazu Takahashi, Shunsuke Takimoto, Kotaro Abukawa, Hiroaki Naruse, Shigeru Nishimura, Masatsugu Itahashi
-
Publication number: 20110049332Abstract: A photoelectric conversion device having a pixel array region in which a plurality of pixels each including a photoelectric converter are arrayed, and a peripheral region arranged around the pixel array region, the device comprising a multilayer wiring structure which is arranged on a semiconductor substrate, and includes wiring layers in the peripheral region more than wiring layers in the pixel array region, and a plurality of interlayer lenses which is arranged on the multilayer wiring structure in the pixel array region, wherein the plurality of interlayer lenses each includes a first insulator, and a second insulator arranged to cover the first insulator, and having a refractive index higher than the first insulator, and wherein the first insulator in each of the plurality of interlayer lenses, and an uppermost interlayer insulating film in the peripheral region in the multilayer wiring structure are made of an identical material.Type: ApplicationFiled: August 10, 2010Publication date: March 3, 2011Applicant: CANON KABUSHIKI KAISHAInventors: Hiroaki Naruse, Ryuichi Mishima
-
Publication number: 20110027934Abstract: A photoelectric conversion apparatus includes: a first interlayer insulation film disposed on a semiconductor substrate; a first plug disposed in a first hole in the first interlayer insulation film, and serving to electrically connect between a plurality of active regions disposed in the semiconductor substrate, between gate electrodes of a plurality of MOS transistors, or between the active region and the gate electrode of the MOS transistor, not through the wiring of the wiring layer; and a second plug disposed in a second hole in the first interlayer insulation film, the second plug being electrically connected to the active region, wherein a wiring arranged over the second plug and closest to the second plug is electrically connected to the second plug, and the wiring electrically connected to the second plug forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved.Type: ApplicationFiled: October 14, 2010Publication date: February 3, 2011Applicant: CANON KABUSHIKI KAISHAInventors: Hiroaki Naruse, Takashi Okagawa, Ryuichi Mishima, Nobuhiko Sato, Hiroshi Yuzurihara
-
Publication number: 20110003426Abstract: A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.Type: ApplicationFiled: September 14, 2010Publication date: January 6, 2011Applicant: CANON KABUSHIKI KAISHAInventors: Takanori Watanabe, Tetsuya Itano, Hidekazu Takahashi, Shunsuke Takimoto, Kotaro Abukawa, Hiroaki Naruse, Shigeru Nishimura, Masatsugu Itahashi
-
Publication number: 20100330723Abstract: In a method of manufacturing a photoelectric conversion device having a pixel region and a peripheral circuit region, a semiconductor compound layer is formed by causing a surface of a diffusion layer or gate electrode of a MOS transistor in the peripheral circuit region to react with a high melting point metal, then an insulating layer is formed in the pixel region and the peripheral circuit region after the step of forming a semiconductor compound layer. A contact hole is formed in the insulating layer to expose a diffusion layer in the pixel region, and a contact hole is formed in the insulating layer to expose the semiconductor compound layer formed in the peripheral circuit region. These holes are formed at different timings. Prior to forming the hole which is formed later, a contact plug is formed in the contact hole which is formed earlier.Type: ApplicationFiled: June 3, 2010Publication date: December 30, 2010Applicant: CANON KABUSHIKI KAISHAInventors: Takehito Okabe, Hiroaki Naruse, Ryuichi Mishima, Kouhei Hashimoto
-
Patent number: 7842988Abstract: A noise generated by a constitution of widening an incident aperture of light of a photoelectric conversion element is reduced. In a manufacturing method of a photoelectric conversion device, first electroconductor arranged in a first hole arranged in the first interlayer insulation layer electrically connects a first semiconductor region to a gate electrode of an amplifying MOS transistor not through wirings included in a wiring layer. Moreover, a second electroconductor electrically connects a second semiconductor region different from the first semiconductor region to a wiring. In a constitution of that second electroconductor, a third electroconductor arranged in a second hole arranged in the first interlayer insulation layer and a fourth electroconductor arranged in a third hole arranged in the second interlayer insulation layer are stacked and electrically connected to each other.Type: GrantFiled: May 21, 2010Date of Patent: November 30, 2010Assignee: Canon Kabushiki KaishaInventors: Takashi Okagawa, Hiroaki Naruse, Hiroshi Yuzurihara, Shigeru Nishimura, Takeshi Aoki, Yuya Fujino
-
Patent number: 7838918Abstract: A photoelectric conversion apparatus includes: a first interlayer insulation film disposed on a semiconductor substrate; a first plug disposed in a first hole in the first interlayer insulation film, and serving to electrically connect between a plurality of active regions disposed in the semiconductor substrate, between gate electrodes of a plurality of MOS transistors, or between the active region and the gate electrode of the MOS transistor, not through the wiring of the wiring layer; and a second plug disposed in a second hole in the first interlayer insulation film, the second plug being electrically connected to the active region, wherein a wiring arranged over the second plug and closest to the second plug is electrically connected to the second plug, and the wiring electrically connected to the second plug forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved.Type: GrantFiled: February 6, 2008Date of Patent: November 23, 2010Assignee: Canon Kabushiki KaishaInventors: Hiroaki Naruse, Takashi Okagawa, Ryuichi Mishima, Nobuhiko Sato, Hiroshi Yuzurihara
-
Publication number: 20100230728Abstract: A noise generated by a constitution of widening an incident aperture of light of a photoelectric conversion element is reduced. In a manufacturing method of a photoelectric conversion device, first electroconductor arranged in a first hole arranged in the first interlayer insulation layer electrically connects a first semiconductor region to a gate electrode of an amplifying MOS transistor not through wirings included in a wiring layer. Moreover, a second electroconductor electrically connects a second semiconductor region different from the first semiconductor region to a wiring. In a constitution of that second electroconductor, a third electroconductor arranged in a second hole arranged in the first interlayer insulation layer and a fourth electroconductor arranged in a third hole arranged in the second interlayer insulation layer are stacked and electrically connected to each other.Type: ApplicationFiled: May 21, 2010Publication date: September 16, 2010Applicant: CANON KABUSHIKI KAISHAInventors: Takashi Okagawa, Hiroaki Naruse, Hiroshi Yuzurihara, Shigeru Nishimura, Takeshi Aoki, Yuya Fujino
-
Publication number: 20100173444Abstract: A manufacturing method of a photoelectric conversion device comprises a first step of forming a gate electrode, a second step of forming a semiconductor region of a first conductivity type, a third step of forming an insulation film, and a fourth step of forming a protection region of a second conductivity type, which is the opposite conductivity type to the first conductivity type, by implanting ions in the semiconductor region using the gate electrode of the transfer transistor and a portion covering a side face of the gate electrode of the transfer transistor of the insulation film as a mask in a state in which the semiconductor substrate and the gate electrode of the transfer transistor are covered by the insulation film, and causing a portion of the semiconductor region of the first conductivity type from which the protection region is removed to be the charge accumulation region.Type: ApplicationFiled: November 20, 2009Publication date: July 8, 2010Applicant: CANON KABUSHIKI KAISHAInventors: Ryuichi Mishima, Mineo Shimotsusa, Hiroaki Naruse
-
Patent number: 7749788Abstract: A noise generated by a constitution of widening an incident aperture of light of a photoelectric conversion element is reduced. In a manufacturing method of a photoelectric conversion device, first electroconductor arranged in a first hole arranged in the first interlayer insulation layer electrically connects a first semiconductor region to a gate electrode of an amplifying MOS transistor not through wirings included in a wiring layer. Moreover, a second electroconductor electrically connects a second semiconductor region different from the first semiconductor region to a wiring. In a constitution of that second electroconductor, a third electroconductor arranged in a second hole arranged in the first interlayer insulation layer and a fourth electroconductor arranged in a third hole arranged in the second interlayer insulation layer are stacked and electrically connected to each other.Type: GrantFiled: August 17, 2007Date of Patent: July 6, 2010Assignee: Canon Kabushiki KaishaInventors: Takashi Okagawa, Hiroaki Naruse, Hiroshi Yuzurihara, Shigeru Nishimura, Takeshi Aoki, Yuya Fujino
-
Publication number: 20080203450Abstract: A photoelectric conversion apparatus includes: a first interlayer insulation film disposed on a semiconductor substrate; a first plug disposed in a first hole in the first interlayer insulation film, and serving to electrically connect between a plurality of active regions disposed in the semiconductor substrate, between gate electrodes of a plurality of MOS transistors, or between the active region and the gate electrode of the MOS transistor, not through the wiring of the wiring layer; and a second plug disposed in a second hole in the first interlayer insulation film, the second plug being electrically connected to the active region, wherein a wiring arranged over the second plug and closest to the second plug is electrically connected to the second plug, and the wiring electrically connected to the second plug forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved.Type: ApplicationFiled: February 6, 2008Publication date: August 28, 2008Applicant: CANON KABUSHIKI KAISHAInventors: Hiroaki Naruse, Takashi Okagawa, Ryuichi Mishima, Nobuhiko Sato, Hiroshi Yuzurihara
-
Publication number: 20080203509Abstract: A photoelectric conversion device comprises a photoelectric conversion element disposed at a semiconductor substrate, and a multilayered wiring structure including a plurality of wiring layers disposed over the semiconductor substrate in such a manner to sandwich an interlayer insulation film therebetween. A diffusion suppressing film is disposed at least on the uppermost one of the wiring layers, the diffusion suppressing film serving to suppress diffusion of material forming the uppermost wiring layer; the diffusion suppressing film covers regions of the uppermost wiring layer and the interlayer insulation film corresponding to the photoelectric conversion element; and a lens is disposed with respect to a region of the diffusion suppressing film corresponding to the photoelectric conversion element.Type: ApplicationFiled: February 6, 2008Publication date: August 28, 2008Applicant: CANON KABUSHIKI KAISHAInventors: Ryuichi Mishima, Hiroaki Naruse
-
Publication number: 20080057615Abstract: A noise generated by a constitution of widening an incident aperture of light of a photoelectric conversion element is reduced. In a manufacturing method of a photoelectric conversion device, first electroconductor arranged in a first hole arranged in the first interlayer insulation layer electrically connects a first semiconductor region to a gate electrode of an amplifying MOS transistor not through wirings included in a wiring layer. Moreover, a second electroconductor electrically connects a second semiconductor region different from the first semiconductor region to a wiring. In a constitution of that second electroconductor, a third electroconductor arranged in a second hole arranged in the first interlayer insulation layer and a fourth electroconductor arranged in a third hole arranged in the second interlayer insulation layer are stacked and electrically connected to each other.Type: ApplicationFiled: August 17, 2007Publication date: March 6, 2008Applicant: CANON KABUSHIKI KAISHAInventors: Takashi Okagawa, Hiroaki Naruse, Hiroshi Yuzurihara, Shigeru Nishimura, Takeshi Aoki, Yuya Fujino
-
Publication number: 20080029793Abstract: A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.Type: ApplicationFiled: July 6, 2007Publication date: February 7, 2008Applicant: CANON KABUSHIKI KAISHAInventors: Takanori Watanabe, Tetsuya Itano, Hidekazu Takahashi, Shunsuke Takimoto, Kotaro Abukawa, Hiroaki Naruse, Shigeru Nishimura, Masatsugu Itahashi
-
Patent number: 5353830Abstract: An apparatus for automatically switching of connection of conduit pipes to clean the pipe lines in a liquid treating plant, to control centrally the automatically switching from a remote place, portions to be washed by a cleaning liquid and the other portions desired to be kept free from a cleaning liquid being separated, the apparatus comprizing a plurality of pipes (11a, 11b, 11c, 11d) of pipe lines which have openings on a circle on a fixed plate (10), switching pipes (17a, 17b) connecting the pipes (11a, 11b, 11c, 11d) to each other at the openings, nozzles (34) to spray a cleaning liquid toward the switching portions of pipes being located in an axis of the circle, the switching pipes and nozzles being substantially arranged in a body and covered with a cover (45), and on the opposite side of the fixed plate (10) where a spraying cleaning liquid is shut by the fixed plate, a drive mechanism (2) which switches the connection of pipes by linearly reciprocating and rotating the switching pipes and nozzles iType: GrantFiled: March 10, 1992Date of Patent: October 11, 1994Assignee: Tsumura Co., Ltd.Inventors: Shigetoshi Mochizuki, Hironori Kitazaki, Masaaki Mori, Michio Nagasawa, Yoshihiko Akiyama, Hiroaki Naruse, Mitsunori Miyazawa, Kiyoshi Mochizuki