Abstract: A manufacturing method for a ferroelectric memory device including: forming a lower electrode; forming an electrode oxide film composed of an oxide of a constituent material of the lower electrode; forming a first ferroelectric layer on the lower electrode by reaction between organometallic source material gas and oxygen gas; forming a second ferroelectric layer on the first ferroelectric layer by reaction between organometallic source material gas and oxygen gas; and forming an upper electrode on the second ferroelectric layer. In the method, the oxygen gas in the forming of the first ferroelectric layer is in an amount less than the amount of oxygen necessary for reaction of the organometallic source material gas. In the method, the oxygen gas in the forming of the second ferroelectric layer is in an amount greater than the amount of oxygen necessary for reaction of the organometallic source material gas.

Abstract: A game apparatus saves, in accordance with an instruction of a user, a photographing image taken by an inward camera or an outward camera, or a handwriting image of a handwritten note inputted using a touch panel. Moreover, in accordance with an instruction of the user, position information is saved together with the photographing image or the handwriting image. That is, a photographing place or a creation place of the handwritten note is registered on a map. When the photographing image or the handwriting image is reproduced, an image of a landmark set near a position on the map indicated by the position information is reproduced before the photographing image or the handwritten image.

Abstract: A game apparatus includes a CPU, and a selection screen including a plurality of kinds of items for allowing a player to select is displayed. The selection screen is a roulette type of display, for example, so that a display proportion of each item may be set based on an ability value of a character, a proceeding situation of a game or a support voltage of a virtual audience that reflects a play content, for example, and as the item, kinds of games, a rule, an event, etc. This roulette is rotated and suspended in response to an operation of the player. Furthermore, one item is determined when the roulette is suspended, and a game process is executed according to the item.

Abstract: A communication terminal transmits, to an access point apparatus, a connection request which includes communication terminal information for identifying the communication terminal and display manner information representing a display manner in which the communication terminal information is displayed on a display device of the access point apparatus. The access point apparatus displays particulars of the communication terminal information included in the connection request, transmitted from the communication terminal, in the display manner represented by the display manner information included in the connection request. The access point apparatus further allows the user to select whether the communication terminal corresponding to the communication terminal information displayed on the display device is to be permitted for connection or not.

Abstract: A method of manufacturing a molded product includes forming a coat film for covering and concealing particles with the surface of a board while filling the gaps among the particles, and separating the coat film for holding the particles on the reverse side from the board. The coat film and the particles are etched from the reverse side of the separated coat film, the particles are removed from the coat film, and an array of dents carved by the particles is formed on the reverse side of the coat film. A film is formed on the reverse side of the coat film, and a molded product having an array of protrusions on the surface is formed from the film.

Abstract: A ferroelectric memory device is equipped with a ferroelectric capacitor having a first electrode, a second electrode, and a ferroelectric layer between the first and second electrodes, and the ferroelectric memory device includes: a wiring that is connected to one of the first electrode and the second electrode, wherein the wiring includes a first wiring layer composed of titanium nitride oriented along a <111> direction, and a second wiring layer formed on the first wiring and composed of titanium aluminum nitride orientated along a <111> direction.

Abstract: A method for manufacturing a ferroelectric memory includes the steps of: forming an iridium film above a substrate; forming an iridium oxide layer on the iridium film; changing the iridium oxide layer into an amorphous iridium layer; oxidizing the amorphous iridium layer to form an iridium oxide portion; forming a ferroelectric film on the iridium oxide portion by a MOCVD method; and forming an electrode on the ferroelectric film.

Abstract: A media sheet re-supply section is provided which connects the downstream side end to the upstream side end of a feeding section provided at a printing section to form an orbiting feed path together with the feeding section, and which flips over a media sheet sent out from the downstream side end of the feeding section, of which one side has received printing, and supplies it to the upstream side end of the feeding section. The media sheet re-supply section has a length of a feed path capable of holding, during printing on a current media sheet by the printing section, at least one preceding media sheet printed prior to the current media sheet.

Abstract: A large-scale display device having a plurality of display units which each include a plurality of elongated plasma tubes each filled with a discharge gas, and at least one pair of display electrodes disposed outside the plasma tubes, voltage applying means which applies a drive voltage to the display electrodes to cause electric discharge in the plasma tubes for display. Vertically adjoining ones of the display units respectively have adjoining portions which are offset thicknesswise from each other for prevention of contact between the plasma tubes of the vertically adjoining display units. The voltage applying means is disposed away from the adjoining portions of the vertically adjoining display units.

Abstract: According to an aspect of an embodiment, a manufacturing method for a mold includes a step of forming a protection film having fluidity on a front surface of a base material on which concave/convex patterns are partitioned, and a step of punching a mold from the base material by causing a male mold to come into a female mold while overlapping a punching surface of the male mold on a back surface of the base material.

Abstract: A method of manufacturing a molded product includes forming a coat film for covering and concealing particles with the surface of a board while filling the gaps among the particles, and separating the coat film for holding the particles on the reverse side from the board. The coat film and the particles are etched from the reverse side of the separated coat film, the particles are removed from the coat film, and an array of dents carved by the particles is formed on the reverse side of the coat film. A film is formed on the reverse side of the coat film, and a molded product having an array of protrusions on the surface is formed from the film.

Abstract: A method for manufacturing a ferroelectric memory includes the steps of: preparing a sol-gel solution; removing solvent from the sol-gel solution to obtain powder; dividing the powder into at least first powder and second powder; obtaining solution with the first powder; coating the solution on a first conductive film; and applying heat treatment to the solution on the first conductive film to form a ferroelectric film.

Abstract: A method for manufacturing a ferroelectric capacitor includes steps of: (a) forming a first crystalline barrier layer; (b) forming a second crystalline barrier layer composed of nitride by nitriding the first crystalline barrier layer; (c) forming a first electrode above the second crystalline barrier layer; (d) forming a ferroelectric film on the first electrode; and (e) forming a second electrode on the ferroelectric film.

Abstract: According to an aspect of an embodiment, a manufacturing method for a nano-structure comprises the steps of: arranging nano-particles on a substrate having a surface provided with a projecting pattern and a recessing pattern; forming cavities under the nano-particles; and polishing the surfaces in which the cavities are formed.

Abstract: A method for manufacturing a ferroelectric capacitor having a ferroelectric film interposed between a first electrode and a second electrode is provided. The method includes the steps of: forming an electrode film above a substrate; thermally oxidizing a surface layer of the electrode film to form an oxidized electrode layer in an atmosphere of atmospheric-pressure with an oxygen partial pressure being 2% or grater; forming a ferroelectric film on the electrode layer by a MOCVD method thereby forming a first electrode composed of the electrode film including the oxidized electrode layer that serves as a base for the ferroelectric film; and forming a second electrode on the ferroelectric film.

Abstract: A method for manufacturing a ferroelectric memory includes the steps of: forming an iridium film above a substrate; forming an iridium oxide layer on the iridium film; changing the iridium oxide layer into an amorphous iridium layer; oxidizing the amorphous iridium layer to form an iridium oxide portion; forming a ferroelectric film on the iridium oxide portion by a MOCVD method; and forming an electrode on the ferroelectric film.

Abstract: According to an aspect of an embodiment, a transcription mold fixation apparatus includes a support base, a magnet, a pin, and a regulating mechanism. The support base receives, on a surface thereof, a transcription mold having a center hole formed therein and containing a magnetic material, and the support base has a through hole aligned to the center hole. The magnet is incorporated in the support base, and fixes the transcription mold to the surface of the support base. The pin extends through the through hole. The regulating mechanism causes the magnet to be spaced apart from the magnetic material.

Abstract: A method for manufacturing a semiconductor device, the method including the steps of: (a) forming a titanium layer above a substrate; (b) forming a barrier layer above the titanium layer; (c) changing the titanium layer to a titanium nitride layer by conducting a heat treatment in a nitrogen containing atmosphere; (d) forming a first electrode above the barrier layer; (e) forming a ferroelectric layer above the first electrode; and (f) forming a second electrode above the ferroelectric layer.

Abstract: A ferroelectric memory element has a memory cell array including memory cells arranged in a matrix configuration, each of the memory cells having a lower electrode, an upper electrode arranged in a direction intersecting the lower electrode, and a ferroelectric layer disposed at least in an intersecting area between the upper electrode and the lower electrode, wherein a hydrogen barrier film and a hydrogen barrier film are arranged at least below the memory cell array, and a bottom hydrogen barrier film is arranged below the memory cell array.

Abstract: According to an aspect of an embodiment, a method for manufacturing a stamper for duplicating a pit pattern on a substrate includes forming on another substrate, a layer of a material insoluble to a liquid of a suspension of particles in a pattern having a plurality of land portions and a plurality of groove portions between the land portions, and dipping the another substrate having the layer of the material having the pattern in the liquid of the suspension of the particles so that the particles are adhered to the groove portions. The-method further includes forming a mold having a plurality of pits corresponding to the particles by transferring the shapes of the particles on the another substrate to the mold, and forming a stamper having a plurality of protrusions corresponding to the pits by transferring the shapes of the pits of the molds to the stamper.