Abstract: A silicon oxide powder represented by the formula: SiOx wherein 1.05≦x≦1.5 and having a BET specific surface area of 5-300 m2/g is useful as a negative electrode material to construct a lithium ion secondary cell having a high capacity and improved cycle performance.

Abstract: Silicon oxide containing active silicon represented by the general formula: SiOx wherein x is from 0.8 to 1.9, when analyzed by solid state NMR (29Si DD/MAS) with a sufficient relaxation time set, exhibits a spectrum having two separate peaks, a broad peak (A1) centered at −70 ppm and a broad peak (A2) centered at −110 ppm, the area ratio A1/A2 being in the range of 0.1≦A1/A2≦1.0.

Abstract: A silicon oxide powder can be continuously prepared by feeding a raw material powder mixture containing silicon dioxide powder into a reaction chamber (2) at a temperature of 1,100-1,600° C., to produce a silicon oxide gas, transferring the silicon oxide gas to a deposition chamber (11) through a transfer conduit (10) maintained at a temperature of from higher than 1,000° C. to 1,300° C., causing silicon oxide to deposit on a substrate (13) which is disposed and cooled in the deposition chamber, scraping the silicon oxide deposit, and recovering the deposit in a recovery chamber (18). The method and apparatus is capable of continuous and stable production of amorphous silicon oxide powder of high purity.

Abstract: Organohalosilanes are prepared by the Rochow process of reacting metallic silicon particles with an organohalide in the presence of a copper catalyst. The metallic silicon particles, which are prepared by committing fragments of metallic silicon raw material, have a mean particle size of 10 &mgr;m to 10 mm and a surface oxygen quantity of at least 0.05 wt % and/or at least 0.001 g of oxygen/m2 of silicon surface area, which is given as the difference between the oxygen concentrations determined by in-metal oxygen analysis of the metallic silicon particles and the fragments, respectively. On analysis, the metallic silicon particles have been held for at least 3 hours in an air atmosphere at 25° C.

Abstract: Silicon nitride powder is continuously prepared by feeding metallic silicon powder into a fluidized bed comprising silicon nitride powder and nitrogen or ammonia gas and discharging a nitrided product from the fluidized bed. The metallic silicon powder is pretreated at a temperature of 1,000.degree.-1,400.degree. C. under a vacuum of 0.001-100 Torr before it is subject to nitriding reaction.

Abstract: A casting mold for a low-pressure casting apparatus can be opened and closed and is closed to form therein a cavity which is filled with molten metal to form a cast product. The casting mold includes an upper mold of metal, a lower mold of metal and a sand mold which is disposed between the upper and lower molds and forms a part of the cavity. A top wall of the cavity is formed by a lower surface of the upper mold, at least a part of a side wall of the cavity is formed by the sand mold so that the upper mold contacts with the molten metal filled in the cavity in a larger area than the lower mold.

Abstract: A method of driving a display apparatus includes the steps of receiving output requests at a interval and outputting an oscillating voltage to a source line connected to display section, the oscillating voltage including a component which oscillates during one output period of time defined by the output requests.

Abstract: In a fluidized bed reactor for preparing a metal nitride by feeding metal powder and a non-oxidizing gas containing N.sub.2 or NH.sub.3 into a reaction tube (1) to form a fluidized bed (2) therein and heating the fluidized bed for nitriding the metal powder, an envelope (11) encloses the reaction tube (1) for preventing the surrounding air from entering the reaction tube. A heater (9) is disposed outside the envelope (11) for heating the fluidized bed (2) to 1,200.degree. C. or higher. The envelope prevents penetration of the surrounding air into the reaction tube and also prevents deterioration of the heater and surrounding components by scattering of metal fines. The reactor ensures safe operation to prepare metal nitride powder of high purity on an industrial scale.

Abstract: Silicon nitride powder is prepared by nitriding metallic silicon powder in a nitriding gas atmosphere at a temperature of 1,000.degree. C.-1,500.degree. C. Midway the nitriding step, the nitrided product is heat treated in an inert non-oxidizing gas atmosphere or vacuum at a temperature higher than the nitriding temperature, but lower than 1,600.degree. C. The product is nitrided again, obtaining high .alpha.-content silicon nitride powder.

Abstract: In a method for preparing a high .alpha.-type silicon nitride powder by adding to and mixing with metallic silicon powder a copper catalyst and nitriding the mixture in a non-oxidizing gas atmosphere containing nitrogen or ammonia at 1,000.degree. to 1,500.degree. C., the amount of copper catalyst is limited to from 0.05 % to less than 0.5 % by weight of copper based on the weight of the metallic silicon. There is obtained silicon nitride powder of high purity at low cost and high efficiency since the copper catalyst can be efficiently removed from the silicon nitride powder through conventional acid treatment.

Abstract: A drive device for driving a matrix-type LCD apparatus comprises a voltage signal supply means for outputting a plurality of voltage signals with different levels. The voltage signals have alternately positive and negative levels with respect to an AC reference voltage applied to a counter-electrode of the LCD apparatus. The AC reference voltage is approximately 180.degree. out-of-phase with the voltage signals. The drive device also comprises a signal electrode drive means which selects one of the voltage signals depending upon an input digital video signal, and which supplies the selected voltage signal to a signal electrode of the LCD apparatus.

Abstract: A driving circuit for a matrix type liquid crystal display device is disclosed.

Abstract: Silicon nitride powder is produced in two steps, by supplying metallic silicon powder to a fluidized bed composed of silicon nitride and nitrogen or ammonia gas where primary nitriding reaction is effected until the silicon powder is nitrided to an amount of at least 50% and transferring the nitrided product from the fluidized bed into a moving bed where secondary nitriding reaction is effected for nitriding the unreacted silicon with nitrogen or ammonia gas. This method is adapted for manufacture on a commercial scale because the silicon nitride powder thus obtained is consistent and has a very high degree of nitriding and a minimal variation in quality.

Abstract: A driving circuit for a matrix type display device in which a plurality of picture elements are arranged in a matrix is disclosed. The driving circuit comprises a video signal output circuit for supplying video signals through output portions to the display device at each horizontal scan.

Abstract: Silicon nitride powder is prepared by continuously supplying metallic silicon powder to a first fluidized bed which is composed of silicon nitride powder and a non-oxidizing reaction gas containing nitrogen or ammonia gas and maintained at 1,000.degree. to 1,400.degree. C. where primary nitriding reaction takes place, and continuously withdrawing the nitride product from the first fluidized bed and supplying it to a second fluidized bed of similar composition where secondary nitriding reaction takes place for nitriding the unreacted metallic silicon powder.

Abstract: A display device of a type for displaying in two levels is so controlled as to display images of different colors by hatching according to different patterns such that images of different colors can be distinguished. In order to prevent distortion of image caused by hatching, hatching corresponding to any particular color can be selectively prevented. With a binary conversion circuit with adjustable reference voltages, an image with various combinations of analog color signals can also be displayed.

Abstract: A liquid crystal display device for an overhead projector has a light-transmissive liquid crystal display cell sandwiched between protective plates both from above and below. At least one of these protective plates is separated from the cell surface to form an air passage provided with a fan such that air can be caused to flow therethrough and come into direct contact with the cell. The cell can thus be cooled efficiently and the light of the projector can be increased for projecting a clearer image.