Patents by Inventor Hirofumi Funabashi

Hirofumi Funabashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20020178828
    Abstract: A capacitive physical load sensor includes a substrate, which has fixed electrodes, and a diaphragm, which has movable electrodes. The diaphragm is located across a gap from the substrate, and retaining parts for the diaphragm are formed around the diaphragm. Protruding parts extend into the gap from the diaphragm or from the substrate. The protruding parts support the diaphragm at different levels of deformation to alter the characteristics of the diaphragm and extend its range.
    Type: Application
    Filed: May 30, 2002
    Publication date: December 5, 2002
    Inventors: Yasutoshi Suzuki, Seiichiro Ishio, Keiichi Shimaoka, Norikazu Ohta, Hirofumi Funabashi
  • Patent number: 4986131
    Abstract: In a semiconductor strain detector, the temperature characteristic of the output of a zero-point temperature compensating circuit is added to the zero-point temperature characteristic of the output of a bridge circuit composed of strain gauges, to perform a zero-point temperature compensation of the final output. Further, two kinds of diffusion resistors having different surface impurity densities are used in each amplifying circuit to perform a sensitivity-temperature compensation in which a temperature coefficient of sensitivity is considered up to the second-order term.
    Type: Grant
    Filed: December 28, 1989
    Date of Patent: January 22, 1991
    Assignee: Kabushiki Kaisha Toyota Chuo Kenkyusho
    Inventors: Susumu Sugiyama, Shiro Yamashita, Hirofumi Funabashi